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Microchip Technology 1N8167US/TR
- Part No.:
- 1N8167US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8167US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:8,886
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Product details
Overview
1N8167US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) diode designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 40.0 V working standoff voltage (VWM), 44.7 V minimum breakdown voltage (V(BR)), and ultra-low 4 pF capacitance - enabling ESD/EFT protection in RF, data comms, and avionics interfaces.
For engineers reviewing the 1N8167US/TR datasheet, 1N8167US/TR pinout, 1N8167US/TR application, or 1N8167US/TR equivalent, key selection criteria include low-capacitance transient clamping for >100 MHz signal integrity, Category 1 metallurgical bond reliability, hermetic glass package robustness, and IEC61000-4-2/4-4 compliance without PCB layout compromise.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve 4 pF total capacitance - the lowest available for a 150 W rated device. Its hard-glass hermetic construction uses internal tungsten slugs and Category 1 metallurgical bonds for radiation hardness and MIL-STD-750 ESD insensitivity.
It operates across –55 °C to +175 °C junction temperature, with 0.5 µA maximum standby current at 40.0 V VWM and 64.6 V clamping voltage (VC) at 300 A IPP. The device is unidirectional, cathode-banded, and optimized for axial-leaded through-hole mounting with RoHS-compliant matte tin plating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 40.0 V - Maximum continuous reverse standoff voltage before leakage exceeds 0.5 µA; defines safe operating margin for protected signal lines. |
| V(BR) min | 44.7 V - Minimum avalanche breakdown voltage at 1 mA I(BR); ensures predictable turn-on under transients. |
| VC @ IPP | 64.6 V - Clamping voltage at 300 A peak impulse current; limits downstream voltage stress during surge events. |
| CT | 4 pF - Total small-signal capacitance at 0 V; preserves signal integrity in high-speed analog/RF paths. |
| PPP | 150 W - Peak pulse power rating at 10/1000 µs waveform; supports lightning-level surge immunity per IEC61000-4-5. |
| TJ range | –55 °C to +175 °C - Extended junction temperature range enables operation in aerospace, downhole, and military environments. |
| RθJA | 150 °C/W - Thermal resistance from junction to ambient; informs heatsinking requirements for sustained pulse duty cycles. |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard-glass case with tungsten slugs; cathode indicated by band; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal under forward bias; connected to protected line in unidirectional clamp configuration. | Accepts transient energy during reverse avalanche; must be routed to ground reference via low-inductance path. |
| Cathode | Negative terminal; marked by band; reverse-biased during normal operation. | Serves as clamping node - voltage at cathode rises to VC during surge, limiting voltage seen by downstream IC. |
Key Features
| Feature | Design Value |
|---|---|
| Low capacitance architecture | 4 pF achieved via integrated series rectifier diode - enables protection of >100 MHz RF front-ends without signal distortion. |
| Category 1 metallurgical bond | Internal tungsten-based bond structure qualified for high-reliability applications including space-grade and avionics systems. |
| Hermetic voidless glass seal | Eliminates moisture ingress and internal delamination risk - ensures long-term parameter stability in harsh environments. |
| IEC61000-4-2/4-4 compliance | Validated ESD (±15 kV air, ±8 kV contact) and EFT (±2 kV) immunity without external filtering components. |
| Radiation hardness | Inherently radiation-tolerant per Microsemi MicroNote 050 - suitable for low-dose space and nuclear instrumentation applications. |
Applications
| RF Transceiver Protection | Avionics Data Bus Interface |
|---|---|
Use Scenario: Protecting L-band antenna feedlines and transceiver I/O pins from induced lightning surges and ESD events in airborne communication systems. IC Role / Device Role / Timing Role: Unidirectional clamping diode placed between RF port and ground, leveraging 4 pF capacitance to avoid impedance mismatch or insertion loss. Use Value: Maintains VSWR <1.2:1 up to 2 GHz while clamping transients to ≤64.6 V - preventing damage to GaAs LNAs and SAW filters. | Use Scenario: Safeguarding ARINC 429 receive inputs against coupling-induced transients on aircraft wiring harnesses. IC Role / Device Role / Timing Role: Standoff-rated TVS on differential data line, with VWM = 40.0 V matching nominal bus voltage swing. Use Value: Prevents latch-up in line receivers during 100 A/10/1000 µs surges while adding <0.1 dB insertion loss at 100 kHz. |
| Military Radio Front-End | Downhole Telemetry Interface |
Use Scenario: Transient suppression on HF/VHF antenna ports of manpack radios exposed to EMP and static discharge in field deployments. IC Role / Device Role / Timing Role: Primary protection element mounted directly at SMA connector entry point, using axial leads for mechanical strain relief. Use Value: Survives 300 A surges with <1 ns response time and zero parameter shift after 1000 pulses - validated per MIL-STD-883. | Use Scenario: Protecting RS-485 telemetry links in oil/gas wellhead controllers operating at 150 °C ambient. IC Role / Device Role / Timing Role: High-temperature-stable TVS on isolated data lines, leveraging –55 °C to +175 °C TJ range and hermetic seal. Use Value: Eliminates need for derating or external thermal management - maintains 40.0 V VWM tolerance across full downhole temperature profile. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ40A | Surface-mount DO-214AB package; 64.5 V VC @ 300 A; 150 W PPP; 15 pF capacitance. | Higher capacitance limits use in >50 MHz circuits; requires rework for axial-to-SMD transition. | Select when board space is constrained and RF performance is secondary to cost and assembly efficiency. |
| 1N6332A | Axial DO-41 package; 43.0 V VWM; 69.4 V VC @ 240 A; 150 W PPP; 5.5 pF capacitance; non-hermetic epoxy package. | Lacks Category 1 bond and hermetic seal - unsuitable for radiation-hardened or long-life mission-critical systems. | Choose only for commercial-grade industrial controls where 15-year field life and extreme environment resilience are not required. |
Compared with SMCJ40A and 1N6332A, the 1N8167US/TR uniquely combines 4 pF capacitance, hermetic reliability, and axial through-hole robustness - making it the sole option for RF-sensitive, high-integrity systems requiring zero parameter drift over decades.
Availability
1N8167US/TR is available at Aetrix Electronics and suitable for RF transceiver protection, avionics data bus interface, and downhole telemetry applications requiring stable component supply, long-lifecycle continuity, and guaranteed hermetic reliability.
Supply support for 1N8167US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and security-focused analog and mixed-signal solutions.
The 1N8167US/TR belongs to Microsemi's legacy high-reliability TVS family, engineered specifically for defense, aerospace, and critical infrastructure applications demanding hermetic sealing, Category 1 bonding, and IEC/MIL-standard transient immunity.
FAQ
What is the clamping voltage of the 1N8167US/TR at its rated peak surge current?
The 1N8167US/TR has a maximum clamping voltage (VC) of 64.6 V at 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is measured per Microsemi T4-LDS-xxxx specification and defines the upper voltage limit imposed on protected circuitry during worst-case surge events. The 1N8167US/TR maintains this clamping performance across its full operating temperature range.
Is the 1N8167US/TR suitable for bidirectional transient protection?
No - the 1N8167US/TR is a unidirectional TVS diode. Bidirectional protection requires two 1N8167US/TR devices connected in anti-parallel, as documented in Figure 5 of the Microsemi datasheet. This configuration doubles the effective capacitance to 8 pF but provides symmetrical clamping for AC-coupled or differential signal lines.
Does the 1N8167US/TR meet RoHS compliance requirements?
Yes - the "e3" suffix in the full part number (1N8167US/TR-e3) indicates RoHS-compliant matte tin plating over copper leads. The base 1N8167US/TR is offered in both RoHS and non-RoHS versions; Aetrix Electronics supplies the RoHS-compliant variant unless otherwise specified. All hermetic glass packaging materials comply with Directive 2011/65/EU Annex II exemptions.
What is the thermal resistance and maximum steady-state power dissipation of the 1N8167US/TR?
The 1N8167US/TR has a junction-to-ambient thermal resistance (RθJA) of 150 °C/W and a maximum steady-state average power dissipation (PM(AV)) of 1.0 W at TA = 25 °C. This rating assumes adequate PCB copper area and airflow; derating is required above 25 °C ambient per the Figure 3 derating curve in the Microsemi datasheet. The 1N8167US/TR is not intended for continuous power regulation.
How does the 4 pF capacitance of the 1N8167US/TR compare to standard TVS diodes?
The 1N8167US/TR's 4 pF capacitance is the lowest published value for any 150 W rated TVS diode - approximately 3× lower than typical DO-15 or SMA packages (e.g., 12–15 pF). This is achieved via Microsemi's proprietary series-rectifier architecture, making the 1N8167US/TR uniquely suitable for protecting RF amplifiers, GPS receivers, and high-speed serial links without signal degradation.
1N8167US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 40V
- Voltage - Breakdown (Min):
- 44.7V
- Voltage - Clamping (Max) @ Ipp:
- 64.6V
- Current - Peak Pulse (10/1000µs):
- 2.32A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8167US/TR FAQ
1.How can I place an order for 1N8167US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8167US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8167US/TR reliable?
The price and inventory of 1N8167US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8167US/TR is usually 5 days.
3.What payment methods are accepted for 1N8167US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8167US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8167US/TR?
1N8167US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8167US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8167US/TR?
For technical support, including 1N8167US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8167US/TR requirements.
6.How does Aetrix verify that 1N8167US/TR is sourced from the original manufacturer or authorized distributors?
All 1N8167US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8167US/TR meets industry standards.
7.What is the process for return or replacement of 1N8167US/TR?
All 1N8167US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8167US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8167US/TR part is unused and in its original packaging.
Return procedure for 1N8167US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8167US/TR Tags
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