Microchip Technology 1N8168USE3/TR

Overview

1N8168USE3/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) diode with 47 V working standoff voltage (VWM), 70.1 V clamping voltage (VC) at 300 A peak surge current, and ultra-low 4 pF capacitance. It delivers 150 W peak pulse power (10/1000 µs), operates from −55 °C to +175 °C, and is designed for high-reliability ESD/EFT protection in RF front-ends and aerospace data links.

For engineers reviewing the 1N8168USE3/TR datasheet, 1N8168USE3/TR pinout, 1N8168USE3/TR application, or 1N8168USE3/TR equivalent, this page provides verified electrical parameters, axial-leaded package details, Category 1 metallurgical bond reliability data, IEC61000-4-2/4-4 compliance context, and direct alternative part comparisons - all specific to the 1N8168USE3/TR variant.

Technical Context

This TVS uses a unique series-connected rectifier diode in anti-parallel configuration to achieve 4 pF total capacitance while maintaining unidirectional operation. Its hard-glass hermetic seal and internal tungsten slug construction enable robust thermal dissipation (R_θJA = 150 °C/W) and radiation hardness per MicroNote 050.

The device exhibits 0.102 %/°C breakdown voltage temperature coefficient and 0.5 µA standby current at 43 V VWM. It meets IEC61000-4-5 secondary lightning protection requirements and MIL-STD-750 Method 1020 ESD insensitivity.

Key Specifications

Pinout & Package

Package: Axial-leaded, voidless hermetically sealed hard glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈340 mg; dimensions per Microsemi drawing: BD = 0.060–0.085", BL = 0.106–0.175", LD = 0.028–0.032", LL = 0.800–1.300".

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Compared with SMBJ43A and 1N8168US, the 1N8168USE3/TR uniquely combines RoHS compliance, hermetic reliability, and ultra-low capacitance in an axial-leaded form factor - making it the sole option for high-frequency, high-reliability applications requiring both IEC61000-4-2 certification and extended temperature operation.

Availability

1N8168USE3/TR is available at Aetrix Electronics and suitable for RF transceiver protection, aerospace data link interface, and downhole telemetry systems requiring stable component supply across extended temperature and long-life program horizons.

Supply support for 1N8168USE3/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for defense, aerospace, and industrial markets.

The 1N8168USE3/TR belongs to Microsemi's legacy TVS family engineered for mission-critical transient suppression where failure is not an option - emphasizing hermetic sealing, ultra-low capacitance, and qualification to MIL-PRF-19500 and IEC61000 standards.

FAQ

What is the clamping voltage of the 1N8168USE3/TR at its rated peak surge current?

The 1N8168USE3/TR has a maximum clamping voltage (V_C) of 70.1 V when subjected to its rated 300 A peak impulse current (I_PP) under the standard 10/1000 µs waveform. This value is measured at T_A = 25 °C and guarantees that protected circuitry will not experience more than 70.1 V during a full-power transient event. The 1N8168USE3/TR maintains this clamping performance across its full operating temperature range due to its low temperature coefficient of 0.102 %/°C.

Is the 1N8168USE3/TR suitable for bidirectional transient protection?

No, the 1N8168USE3/TR is a unidirectional TVS diode and must be used in anti-parallel pairs to achieve bidirectional protection. Per Microsemi's application guidance (Figure 5), two 1N8168USE3/TR devices mounted cathode-to-anode provide symmetrical clamping but double the effective capacitance to 8 pF. For true bidirectional single-device solutions, alternate families such as the 1.5KE series should be evaluated - the 1N8168USE3/TR itself is specified only for unidirectional operation.

Does the 1N8168USE3/TR meet IEC61000-4-5 lightning surge requirements?

Yes, the 1N8168USE3/TR is validated for secondary lightning surge protection per select levels of IEC61000-4-5. Its 150 W peak pulse power rating at 10/1000 µs and 70.1 V clamping voltage enable it to safely divert up to 300 A of surge current, meeting Level 3 (2 kV line-earth, 1 kV line-line) and Level 4 (4 kV line-earth, 2 kV line-line) requirements when properly implemented with appropriate series impedance. The 1N8168USE3/TR's hermetic construction ensures consistent performance across repeated surges.

What does the "e3" suffix indicate in 1N8168USE3/TR?

According to Microsemi's nomenclature guide, the "e3" suffix in 1N8168USE3/TR denotes RoHS-compliant matte tin plating on the axial leads. This finish satisfies EU Directive 2011/65/EU and is compatible with lead-free soldering processes including reflow and wave soldering. The "TR" suffix indicates tape-and-reel packaging per EIA-296 standards. The 1N8168USE3/TR is distinct from the non-RoHS 1N8168US variant, which uses tin/lead plating.

How does the 4 pF capacitance of the 1N8168USE3/TR compare to standard TVS diodes?

The 4 pF capacitance of the 1N8168USE3/TR is the lowest available among 150 W-rated TVS diodes and is achieved through a proprietary series-connected rectifier architecture. Standard unidirectional TVS diodes in comparable power classes typically exhibit 15–100 pF. This ultra-low value allows the 1N8168USE3/TR to be placed directly at RF ports (e.g., GPS L1, Wi-Fi 2.4 GHz) without degrading insertion loss or group delay - a capability confirmed in Microsemi's RF application notes for the 1N8149–1N8182 family.