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Microchip Technology 1N8168US/TR
- Part No.:
- 1N8168US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8168US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:6,331
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Product details
Overview
1N8168US/TR from Microsemi is a voidless-hermetically-sealed unidirectional Transient Voltage Suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 47.0 V working standoff voltage (VWM), 70.1 V maximum clamping voltage (VC) at 300 A IPP, and ultra-low 4 pF capacitance - ideal for ESD-sensitive RF front-ends and MIL-STD-750-compliant aerospace interfaces.
For engineers reviewing the 1N8168US/TR datasheet, 1N8168US/TR pinout, 1N8168US/TR application, or 1N8168US/TR equivalent, key selection criteria include low-capacitance transient suppression in hermetic glass packages, Category 1 metallurgical bonding for radiation-hardened environments, and compliance with IEC61000-4-2/4-4/4-5 for secondary lightning and EFT protection.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve 4 pF total capacitance - the lowest among 150 W-rated TVS devices. Its hard-glass, voidless hermetic seal ensures long-term stability under thermal cycling and humidity exposure.
Rated for -55°C to +175°C junction temperature, it uses internal tungsten slugs and Category 1 metallurgical bonds for high-reliability applications including space-grade avionics and defense electronics. The device operates unidirectionally with cathode-band polarity and supports axial-leaded through-hole mounting.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 47.0 V - maximum continuous reverse standoff voltage before leakage exceeds 0.5 µA |
| VC @ IPP=300 A | 70.1 V - clamping voltage during 10/1000 µs surge, limiting downstream voltage stress |
| PPP | 150 W - peak pulse power handling at 25°C, derated above 25°C per Figure 3 |
| CT | 4 pF - total capacitance at 0 V, enabling >1 GHz signal integrity in RF paths |
| TJ Range | -55°C to +175°C - operational range compatible with MIL-STD-883 and radiation-hardened systems |
| RθJA | 150°C/W - thermal resistance indicating need for heatsinking or PCB copper area in sustained surge scenarios |
| V(BR) Min | 48.5 V - minimum breakdown voltage at I(BR)=1 mA, ensuring tight tolerance for precision clamping |
Pinout & Package
Package: Hermetically sealed voidless hard-glass axial-leaded package with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal under forward bias | Connected to protected line; conducts only during reverse-transient clamping |
| Cathode | Negative terminal; marked with band | Connected to ground or reference rail; defines unidirectional conduction path |
Key Features
| Feature | Design Value |
|---|---|
| Lowest capacitance in 150 W class | 4 pF enables use in >1 GHz RF receivers without signal distortion |
| Category 1 metallurgical bond | Internal bond structure qualified for high-reliability aerospace and military applications |
| Voidless hermetic glass seal | Eliminates moisture ingress and long-term parameter drift in harsh environments |
| Triple-layer passivation | Enhances surface insulation and prevents leakage current increase under humidity stress |
| IEC61000-4-2/4-4/4-5 compliance | Validated for ESD (±8 kV contact), EFT (±2 kV), and lightning surge (1 kV line-earth) |
Applications
| Avionics Data Bus Protection | Satellite RF Front-End Protection |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B data lines against induced transients in airborne platforms. IC Role / Device Role / Timing Role: Unidirectional TVS placed between bus line and chassis ground to clamp surges while preserving signal integrity. Use Value: 4 pF capacitance avoids signal rise-time degradation; 70.1 V clamping limits voltage seen by receiver ICs during lightning-induced surges. | Use Scenario: Shielding L-band or S-band LNAs from ESD events during antenna interface handling in satellite payloads. IC Role / Device Role / Timing Role: Low-capacitance TVS mounted directly at RF connector entry point to shunt fast transients before reaching sensitive GaAs MMICs. Use Value: 4 pF capacitance preserves VSWR and noise figure; hermetic seal prevents outgassing-induced performance shift in vacuum. |
| Military Radar Power Supply Lines | Spacecraft Command & Telemetry Interfaces |
Use Scenario: Safeguarding DC power inputs to radar T/R modules exposed to EMP-like pulses in ground-based systems. IC Role / Device Role / Timing Role: TVS installed across input rails to absorb 150 W surges without thermal runaway due to robust glass construction. Use Value: 150 W PPP rating handles multi-pulse threats; -55°C to +175°C range accommodates wide ambient swings in desert deployments. | Use Scenario: Protecting RS-422 command links between onboard computers and reaction wheels or star trackers. IC Role / Device Role / Timing Role: Unidirectional TVS on differential pair lines to suppress ESD without disrupting common-mode rejection. Use Value: Radiation hardness per MicroNote 050 ensures no parametric shift after 100 krad(Si); Category 1 bond guarantees reliability over 15-year mission life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N8168US | Same electrical specs; tape-and-reel packaging omitted - bulk or ammo pack only | No automated placement support; requires manual loading or vibration feeders | Select 1N8168US/TR when using pick-and-place assembly; choose 1N8168US for hand-soldered prototyping or low-volume repair |
| SMCJ47A | Higher 100 pF capacitance; DO-214AB package; 1500 W PPP rating but lower VWM tolerance (±5% vs ±2%) | Better for power-line surge; unsuitable for RF or high-speed data due to capacitance | Choose SMCJ47A only for non-RF industrial AC/DC inputs; avoid where <10 pF capacitance is required |
Compared with 1N8168US/TR, 1N8168US lacks tape-and-reel compatibility but matches all electrical and reliability specs, while SMCJ47A trades ultra-low capacitance for higher power handling in non-high-frequency roles - making 1N8168US/TR the sole choice for RF and aerospace signal-line protection.
Availability
1N8168US/TR is available at Aetrix Electronics and suitable for avionics data bus protection, satellite RF front-end protection, and spacecraft command & telemetry interfaces requiring stable component supply across extended production lifecycles.
Supply support for 1N8168US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, hermetic, and high-temperature operation.
The 1N8149–1N8182 series was developed specifically for ultra-low-capacitance transient suppression in mission-critical RF and digital signal paths where conventional TVS diodes introduce unacceptable signal distortion.
FAQ
What is the clamping voltage of the 1N8168US/TR at its rated peak pulse current?
The 1N8168US/TR has a maximum clamping voltage (VC) of 70.1 V at 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is measured at 25°C ambient and ensures downstream circuitry remains within safe operating voltage limits during transient events. The 1N8168US/TR maintains this clamping performance across its full -55°C to +175°C junction temperature range, with minor derating above 25°C per the manufacturer's derating curve.
Is the 1N8168US/TR suitable for bidirectional transient protection?
No - the 1N8168US/TR is a unidirectional TVS diode, intended for protection of DC-biased or single-polarity signal lines. For bidirectional protection, Microsemi recommends using two 1N8168US/TR devices in anti-parallel configuration, as shown in Figure 5 of the datasheet. This arrangement doubles the effective capacitance to 8 pF but retains the same clamping performance and reliability attributes of the 1N8168US/TR.
Does the 1N8168US/TR meet space-level reliability standards?
Yes - the 1N8168US/TR features voidless hermetic glass packaging, Category 1 internal metallurgical bonds, and inherent radiation hardness validated per Microsemi MicroNote 050. It is rated for operation from -55°C to +175°C and complies with MIL-STD-750 Method 1020 for ESD insensitivity. These characteristics make the 1N8168US/TR suitable for use in LEO and GEO satellite systems where long-term reliability and radiation tolerance are mandatory.
What is the lead finish and RoHS status of the 1N8168US/TR?
The 1N8168US/TR uses RoHS-compliant matte tin plating over copper leads, as confirmed in the Mechanical and Packaging section of the datasheet. The "e3" suffix in the nomenclature indicates RoHS compliance. Lead finish meets JEDEC J-STD-609 Category 3 requirements, and the device is exempt from certain RoHS substance restrictions applicable to high-reliability aerospace components per EU Directive 2011/65/EU Annex III.
How does the 4 pF capacitance of the 1N8168US/TR compare to standard TVS diodes?
The 1N8168US/TR's 4 pF capacitance is the lowest published value among commercially available 150 W peak pulse power TVS diodes. Standard SMA/SMB-packaged TVS devices typically range from 30–100 pF, while even specialized low-capacitance variants rarely fall below 10 pF. This 4 pF value is achieved via a proprietary series-connected rectifier architecture, enabling use in >1 GHz RF applications where conventional TVS diodes would degrade signal fidelity or cause impedance mismatch.
1N8168US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 43V
- Voltage - Breakdown (Min):
- 48.5V
- Voltage - Clamping (Max) @ Ipp:
- 70.1V
- Current - Peak Pulse (10/1000µs):
- 2.14A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8168US/TR FAQ
1.How can I place an order for 1N8168US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8168US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8168US/TR reliable?
The price and inventory of 1N8168US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8168US/TR is usually 5 days.
3.What payment methods are accepted for 1N8168US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8168US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8168US/TR?
1N8168US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8168US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8168US/TR?
For technical support, including 1N8168US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8168US/TR requirements.
6.How does Aetrix verify that 1N8168US/TR is sourced from the original manufacturer or authorized distributors?
All 1N8168US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8168US/TR meets industry standards.
7.What is the process for return or replacement of 1N8168US/TR?
All 1N8168US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8168US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8168US/TR part is unused and in its original packaging.
Return procedure for 1N8168US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8168US/TR Tags
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