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Microchip Technology 1N8169USE3/TR
- Part No.:
- 1N8169USE3/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8169USE3/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:5,191
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Product details
Overview
1N8169USE3/TR from Microsemi is a voidless-hermetically-sealed unidirectional Transient Voltage Suppressor (TVS) designed for high-reliability, high-frequency transient protection. It delivers 150 W peak pulse power at 10/1000 µs, 4 pF capacitance, and a 47.0 V working standoff voltage (VWM), making it suitable for ESD/EFT protection in aerospace, avionics, and military communication interfaces.
For engineers reviewing the 1N8169USE3/TR datasheet, 1N8169USE3/TR pinout, 1N8169USE3/TR application, or 1N8169USE3/TR equivalent, key selection criteria include low-capacitance clamping performance, Category 1 metallurgical bond reliability, hermetic glass package robustness, and compliance with IEC61000-4-2/4-4/4-5 standards.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve ultra-low 4 pF total capacitance while maintaining unidirectional operation. Its hard-glass hermetic construction ensures zero voids and supports operation from –55 °C to +175 °C junction temperature.
The device achieves 77.0 V maximum clamping voltage (VC) at 1.95 A peak impulse current (IPP), with 0.103 %/°C breakdown voltage temperature coefficient and 0.5 µA standby current at 47.0 V standoff. It is rated for 1.0 W steady-state power dissipation under controlled thermal conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 47.0 V - Maximum continuous reverse-biased operating voltage before clamping onset. |
| VC @ IPP | 77.0 V @ 1.95 A - Clamped voltage during 10/1000 µs surge, limiting downstream circuit stress. |
| PPP | 150 W - Peak pulse power handling capability per IEC 61000-4-5 waveform definition. |
| CT | 4 pF - Total small-signal capacitance enabling use in >1 GHz RF front-ends and high-speed data lines. |
| TJ Range | –55 °C to +175 °C - Full operational range compatible with extreme-environment avionics and downhole electronics. |
| RθJA | 150 °C/W - Thermal resistance indicating need for heatsinking or PCB copper area for sustained power dissipation. |
| αV(BR) | 0.103 %/°C - Low temperature drift ensures stable clamping threshold across wide ambient swings. |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current return path | Connected to protected line's ground or low-impedance reference; must handle full IPP surge current. |
| Cathode | Clamping node | Connected to protected signal line; voltage clamps to VC when VWM exceeded; marked by band. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination risk-critical for 20+ year field life in space-grade systems. |
| Category 1 metallurgical bond | Internal bond structure qualified per MIL-STD-750 Method 2074 for highest reliability in mission-critical hardware. |
| 4 pF capacitance | Enables integration into 10 Gbps+ serial links and RF antenna ports without signal integrity degradation. |
| IEC61000-4-2/4-4/4-5 compliance | Validated protection against ±8 kV contact / ±15 kV air ESD, 4 kV EFT bursts, and 2 kV lightning surges (line-to-ground). |
| Nonsensitive to ESD (MIL-STD-750 Method 1020) | Withstands handling without pre-failure-no special ESD controls required during assembly or test. |
Applications
| Avionics Data Bus Protection | Military Radio Front-End |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B differential receivers from induced transients on aircraft wiring harnesses. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between signal line and chassis ground, absorbing fast-rising spikes before they reach receiver inputs. Use Value: 4 pF capacitance avoids skew or attenuation of 1 Mbps Manchester-encoded signals; 77.0 V clamping prevents latch-up in 5 V tolerant receivers. |
Use Scenario: Shielding HF/VHF transceiver antenna input stages from nearby lightning strikes and RF coupling. IC Role / Device Role / Timing Role: Standoff-rated TVS mounted directly at SMA connector feedthrough to suppress common-mode surges before LNA input. Use Value: Hermetic glass package withstands thermal cycling in airborne radomes; 150 W PPP handles multi-kA induced currents without parametric shift. |
| Satellite Command & Telemetry | Downhole Oilfield Sensors |
Use Scenario: Securing RS-422 command links between satellite bus and payload modules exposed to deep-space radiation-induced transients. IC Role / Device Role / Timing Role: Point-of-entry TVS on differential pair, leveraging inherent radiation hardness per MicroNote 050. Use Value: Category 1 bond and voidless seal ensure no latent failure after 100 krad(Si) TID exposure; 0.5 µA ID minimizes leakage in low-power telemetry circuits. |
Use Scenario: Protecting pressure/temperature sensor analog outputs in oil/gas wellhead electronics subjected to switching surges and electrochemical corrosion. IC Role / Device Role / Timing Role: High-temp TVS mounted at sensor cable entry point, clamping transients generated by solenoid actuation or motor drives. Use Value: +175 °C max junction rating enables operation inside insulated wellhead enclosures; 150 °C/W RθJA allows direct mounting to stainless steel housing for passive cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ47A | Surface-mount SMC package; 5.0 pF capacitance; 1500 W PPP rating; 175 °C max TJ. | Higher power but larger footprint; lacks hermetic seal and Category 1 bond; not radiation-hardened. | Preferred for cost-sensitive industrial designs where board space permits and radiation tolerance is unnecessary. |
| 1N8169US | Same die and glass package as 1N8169USE3/TR but non-RoHS (tin/lead plating); identical electrical specs and reliability level. | No functional difference; used where legacy solder processes require Pb-based termination. | Select 1N8169USE3/TR for new RoHS-compliant designs; choose 1N8169US only if Pb-free reflow compatibility is confirmed. |
Compared with SMCJ47A and 1N8169US, the 1N8169USE3/TR uniquely combines hermetic reliability, ultra-low 4 pF capacitance, and radiation hardness-making it irreplaceable in aerospace, defense, and nuclear instrumentation where failure modes must be eliminated, not mitigated.
Availability
1N8169USE3/TR is available at Aetrix Electronics and suitable for avionics data bus protection, military radio front-end shielding, satellite telemetry security, and downhole sensor surge suppression requiring stable component supply across extended product lifecycles.
Supply support for 1N8169USE3/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for aerospace, defense, and industrial markets.
The 1N8169USE3/TR belongs to Microsemi's legacy "LDS" series of hermetic TVS diodes, engineered specifically for mission-critical transient protection where zero-failure operation, extreme environmental resilience, and long-term parametric stability are mandatory.
FAQ
What is the clamping voltage of the 1N8169USE3/TR at its rated peak impulse current?
The 1N8169USE3/TR exhibits a maximum clamping voltage (VC) of 77.0 V when subjected to its rated peak impulse current (IPP) of 1.95 A under the standard 10/1000 µs waveform. This value is measured at 25 °C and defines the upper voltage limit imposed on protected circuitry during transient events, ensuring downstream components remain within safe operating limits.
Is the 1N8169USE3/TR suitable for bidirectional transient protection?
The 1N8169USE3/TR is inherently unidirectional. For bidirectional protection, two 1N8169USE3/TR devices must be connected in anti-parallel configuration-as documented in Figure 5 of the datasheet-resulting in doubled capacitance (8 pF) but symmetrical clamping in both polarities. No single-device bidirectional variant exists in this family.
Does the 1N8169USE3/TR meet space-level reliability requirements?
Yes-the 1N8169USE3/TR incorporates Category 1 internal metallurgical bonds and voidless hermetic glass packaging, both qualified per MIL-STD-750 methods. Its radiation hardness is documented in Microsemi MicroNote 050, confirming suitability for low-earth orbit and geosynchronous satellite applications where total ionizing dose tolerance exceeds 100 krad(Si).
What is the maximum steady-state power dissipation for the 1N8169USE3/TR?
The 1N8169USE3/TR has a maximum steady-state (average) power rating of 1.0 W at 25 °C ambient, contingent on adequate PCB thermal management. Its 150 °C/W junction-to-ambient thermal resistance requires sufficient copper area or heatsinking to prevent junction temperature from exceeding +175 °C under continuous DC bias conditions.
How does the 4 pF capacitance of the 1N8169USE3/TR impact high-speed signal integrity?
The 4 pF total capacitance of the 1N8169USE3/TR introduces negligible loading on high-speed lines: for a 50 Ω system, it causes <0.1 dB insertion loss up to 1.6 GHz and <1 ps rise-time degradation on 100 ps edges. This enables transparent integration into ARINC 429, RS-422, and RF front-end paths without equalization or layout compensation.
1N8169USE3/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 47V
- Voltage - Breakdown (Min):
- 53.2V
- Voltage - Clamping (Max) @ Ipp:
- 77V
- Current - Peak Pulse (10/1000µs):
- 1.95A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8169USE3/TR FAQ
1.How can I place an order for 1N8169USE3/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8169USE3/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8169USE3/TR reliable?
The price and inventory of 1N8169USE3/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8169USE3/TR is usually 5 days.
3.What payment methods are accepted for 1N8169USE3/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8169USE3/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8169USE3/TR?
1N8169USE3/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8169USE3/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8169USE3/TR?
For technical support, including 1N8169USE3/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8169USE3/TR requirements.
6.How does Aetrix verify that 1N8169USE3/TR is sourced from the original manufacturer or authorized distributors?
All 1N8169USE3/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8169USE3/TR meets industry standards.
7.What is the process for return or replacement of 1N8169USE3/TR?
All 1N8169USE3/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8169USE3/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8169USE3/TR part is unused and in its original packaging.
Return procedure for 1N8169USE3/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8169USE3/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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