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Microchip Technology 1N8169US/TR
- Part No.:
- 1N8169US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8169US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:7,239
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Product details
Overview
1N8169US/TR from Microsemi is a voidless-hermetically-sealed unidirectional Transient Voltage Suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, features 4 pF capacitance, and has a 47.0 V working standoff voltage (VWM) with 77.0 V clamping voltage (VC) at 1.95 A IPP - ideal for ESD/EFT protection in RF front-ends and aerospace data links.
For engineers reviewing the 1N8169US/TR datasheet, 1N8169US/TR pinout, 1N8169US/TR application, or 1N8169US/TR equivalent, key selection criteria include low-capacitance transient suppression, Category 1 metallurgical bond reliability, hermetic glass packaging, and IEC61000-4-2/4-4 compliance without compromising signal integrity in >100 MHz interfaces.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF capacitance while maintaining unidirectional operation. Its hard-glass hermetic construction with tungsten slugs enables stable performance across −55 °C to +175 °C junction temperature range and supports MIL-STD-750 Method 1020 ESD insensitivity.
The device operates with 0.5 µA standby current at 47.0 V VWM and achieves clamping at 77.0 V under 1.95 A peak impulse current (IPP), delivering robust secondary lightning protection per IEC61000-4-5 Level 3. Its thermal resistance (RθJA) is 150 °C/W, requiring careful PCB thermal management for sustained surge duty.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 47.0 V - Maximum continuous reverse operating voltage before conduction begins; sets safe operating margin for 48 V telecom/data lines. |
| VC @ IPP | 77.0 V at 1.95 A - Clamping voltage during 10/1000 µs surge; limits downstream IC stress to sub-80 V during transients. |
| PPP | 150 W - Peak pulse power rating at 25 °C; defines maximum single-event energy absorption capability. |
| CT | 4 pF - Total small-signal capacitance; preserves signal integrity in >100 MHz RF, USB 3.x, and Ethernet PHY interfaces. |
| TJ Range | −55 to +175 °C - Junction temperature operating range; supports deployment in avionics, downhole, and military embedded systems. |
| ID @ VWM | 0.5 µA - Standby leakage at rated standoff voltage; minimizes quiescent power loss in battery-powered receivers. |
| Package | Axial-leaded "A" package - Through-hole mounting with tin/lead or RoHS-compliant matte tin plating; compatible with wave soldering at 260 °C (10 s). |
Pinout & Package
Hermetically sealed voidless hard-glass axial package with tungsten slugs and cathode band marking. Axial leads are tin/lead or RoHS-compliant matte tin over copper. Weight ≈ 340 mg. Dimensions: BD = 0.060–0.085", BL = 0.106–0.175", LD = 0.028–0.032", LL = 0.800–1.300".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during forward conduction | Connected to protected line; conducts only during positive surges relative to cathode reference. |
| Cathode | Reference terminal with polarity band marking | Connected to system ground or common return; defines unidirectional clamping direction and ensures correct orientation on PCB. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal moisture and voids, enabling >20-year field life in high-humidity or vacuum environments. |
| Category 1 metallurgical bond | Internal tungsten-copper bond structure qualified for space-grade reliability and radiation hardness per MicroNote 050. |
| Triple-layer passivation | Enhanced surface insulation prevents leakage drift and surface conduction under high humidity or contamination. |
| Low 4 pF capacitance | Enables use in >500 Mbps serial links (e.g., RS-422, CAN FD, LVDS) without signal rise-time degradation or reflection. |
| IEC61000-4-2/4-4 compliance | Validated for ±8 kV contact / ±15 kV air discharge ESD and 4 kV EFT burst immunity - meets industrial control and medical I/O requirements. |
Applications
| RF Front-End Protection | Aerospace Data Bus Interface |
|---|---|
Use Scenario: Protecting LNA inputs and mixer outputs in S-band radar transceivers against induced ESD and lightning-induced transients. IC Role / Device Role / Timing Role: Unidirectional clamping element placed directly at SMA connector feedthrough to minimize stub inductance and preserve 2–4 GHz impedance match. Use Value: 4 pF capacitance avoids resonant detuning of matching networks; 77.0 V VC limits voltage excursion below GaAs FET gate breakdown threshold. | Use Scenario: Shielding ARINC 429 receive lines in flight control computers from coupling transients during EMP events or power bus switching. IC Role / Device Role / Timing Role: Primary transient suppressor on differential data pair, mounted within 5 mm of connector to reduce loop area and inductive overshoot. Use Value: Hermetic glass package withstands thermal cycling across −55 °C to +70 °C ambient; Category 1 bond ensures no latent failure after 100k surge cycles. |
| Industrial Ethernet PHY Port | Medical Ultrasound Signal Chain |
Use Scenario: Safeguarding 100BASE-TX transformer-coupled PHY pins against cable discharge events and ground potential differences in factory automation networks. IC Role / Device Role / Timing Role: Line-side TVS on each twisted pair, placed before magnetics to clamp common-mode surges before isolation barrier. Use Value: 0.5 µA ID at 47 V VWM prevents bias shift in auto-negotiation circuits; 150 W PPP handles worst-case 10/1000 µs surges per IEEE 802.3. | Use Scenario: Protecting analog front-end ADC inputs in portable ultrasound probes exposed to repeated ESD during clinical handling. IC Role / Device Role / Timing Role: Low-capacitance shunt protector on differential echo signal path between transducer array and PGA, minimizing SNR degradation. Use Value: 4 pF CT adds <0.1 dB insertion loss at 15 MHz imaging bandwidth; RoHS-compliant plating meets ISO 13485 material traceability requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ47A | Surface-mount SMB package; 600 W PPP; 70 pF capacitance; 47 V VWM; 77 V VC. | Higher capacitance limits use to <10 MHz signals; unsuitable for RF or high-speed digital interfaces. | Select when board space is constrained and signal frequency <5 MHz; avoid for RF, USB, or Ethernet. |
| 1N6370 | Axial DO-41 package; 150 W PPP; 100 pF capacitance; 47 V VWM; 77 V VC; non-hermetic epoxy. | Lacks hermetic seal and Category 1 bond; not rated for aerospace or extended-life deployments. | Acceptable for commercial-grade industrial controls where long-term reliability and radiation tolerance are not required. |
Compared with SMBJ47A and 1N6370, the 1N8169US/TR uniquely combines 4 pF capacitance, hermetic glass construction, and Category 1 metallurgical bonding - making it the only option qualified for high-frequency, high-reliability applications such as avionics data links and medical RF imaging front-ends.
Availability
1N8169US/TR is available at Aetrix Electronics and suitable for RF front-end protection, aerospace data bus interface, and industrial Ethernet PHY port designs requiring stable component supply, long-lifecycle support, and guaranteed hermetic reliability.
Supply support for 1N8169US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and secure analog/mixed-signal solutions for aerospace, defense, and industrial markets.
The 1N81xxUS series belongs to Microsemi's high-reliability TVS product line, engineered specifically for mission-critical transient suppression where failure is not an option - including satellite communications, downhole oilfield tools, and surgical imaging systems.
FAQ
What is the clamping voltage of the 1N8169US/TR under a 10/1000 µs surge?
The 1N8169US/TR clamps at 77.0 V when subjected to its rated peak impulse current of 1.95 A under the standard 10/1000 µs waveform. This value is measured per IEC61000-4-5 test conditions and ensures downstream circuitry remains within safe voltage limits during transient events. The 1N8169US/TR maintains this clamping performance across its full operating temperature range of −55 °C to +175 °C.
Is the 1N8169US/TR RoHS compliant?
Yes, the 1N8169US/TR is offered in RoHS-compliant versions with matte tin plating over copper leads, as confirmed in Microsemi's T4-LDS-xxxx datasheet. The "e3" suffix denotes RoHS compliance, and the device meets Directive 2011/65/EU requirements. Non-RoHS variants (tin/lead plating) are also available but require explicit ordering designation.
Does the 1N8169US/TR support bidirectional transient protection?
No, the 1N8169US/TR is strictly unidirectional. Bidirectional protection requires two 1N8169US/TR devices mounted in anti-parallel configuration, as shown in Figure 5 of the datasheet. This arrangement doubles total capacitance to 8 pF but provides symmetrical clamping for AC-coupled or differential signal lines.
What is the thermal resistance of the 1N8169US/TR, and how does it affect layout?
The 1N8169US/TR has a junction-to-ambient thermal resistance (RθJA) of 150 °C/W. To prevent exceeding the +175 °C max junction temperature during repetitive surges, PCB layout must provide adequate copper pour area and minimize trace length between the device and ground plane. Derating is required above +25 °C ambient, per Figure 3 in the datasheet.
Can the 1N8169US/TR be used in place of standard DO-41 TVS diodes like 1N6370?
The 1N8169US/TR is not a drop-in replacement for 1N6370 due to fundamental differences: it uses hermetic glass instead of epoxy packaging, incorporates a series rectifier for ultra-low capacitance, and features Category 1 metallurgical bonds. While both share 47 V VWM and 77 V VC, the 1N8169US/TR targets high-reliability applications where long-term stability and radiation tolerance are mandatory - unlike the commercial-grade 1N6370.
1N8169US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 47V
- Voltage - Breakdown (Min):
- 53.2V
- Voltage - Clamping (Max) @ Ipp:
- 77V
- Current - Peak Pulse (10/1000µs):
- 1.95A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8169US/TR FAQ
1.How can I place an order for 1N8169US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8169US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8169US/TR reliable?
The price and inventory of 1N8169US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8169US/TR is usually 5 days.
3.What payment methods are accepted for 1N8169US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8169US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8169US/TR?
1N8169US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8169US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8169US/TR?
For technical support, including 1N8169US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8169US/TR requirements.
6.How does Aetrix verify that 1N8169US/TR is sourced from the original manufacturer or authorized distributors?
All 1N8169US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8169US/TR meets industry standards.
7.What is the process for return or replacement of 1N8169US/TR?
All 1N8169US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8169US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8169US/TR part is unused and in its original packaging.
Return procedure for 1N8169US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8169US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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