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Microchip Technology 1N8170USE3/TR
- Part No.:
- 1N8170USE3/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8170USE3/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:7,207
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Product details
Overview
1N8170USE3/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 53.0 V working standoff voltage (VWM), 77.0 V peak clamping voltage (VC) at 11.7 A IPP, 4 pF capacitance, and 150 W peak pulse power rating at 10/1000 µs. It features internal Category 1 metallurgical bonds and triple-layer passivation for high-reliability aerospace and defense signal-line protection.
For engineers reviewing the 1N8170USE3/TR datasheet, 1N8170USE3/TR pinout, 1N8170USE3/TR application, or 1N8170USE3/TR equivalent, key selection criteria include low-capacitance ESD suppression in RF front-ends, IEC61000-4-2/4-4 compliance, axial-leaded through-hole mounting, and radiation-hardened construction per MicroNote 050.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF capacitance while maintaining unidirectional operation. Its hard-glass hermetic package enables operation from –55 °C to +175 °C junction temperature with 150 °C/W thermal resistance.
The device delivers 77.0 V clamping voltage at 11.7 A peak impulse current under 10/1000 µs waveform, with 0.5 µA standby leakage at 53.0 V standoff and ±0.104 %/°C breakdown voltage temperature coefficient - optimized for stable transient suppression in high-frequency analog and RF interfaces.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 53.0 V - maximum continuous reverse-biased operating voltage before conduction begins |
| VC @ IPP | 77.0 V at 11.7 A - clamped voltage during 10/1000 µs surge, limiting downstream circuit stress |
| Capacitance | 4 pF - enables use in >1 GHz RF paths without signal integrity degradation |
| PPP | 150 W - peak transient energy absorption capability per IEC61000-4-5 Level 3 |
| TJ Range | –55 °C to +175 °C - supports extended-temperature avionics and downhole electronics |
| RθJA | 150 °C/W - defines thermal derating slope for sustained power dissipation on PCB |
| αV(BR) | ±0.104 %/°C - ensures predictable breakdown shift across wide ambient ranges |
Pinout & Package
Hermetically sealed voidless hard-glass axial-leaded package with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal under forward bias | Connected to protected line side; conducts only during reverse-transient clamping |
| Cathode | Negative terminal; marked with band | Connected to ground or reference rail; defines unidirectional clamping polarity |
Key Features
| Feature | Design Value |
|---|---|
| Low capacitance architecture | 4 pF achieved via integrated anti-parallel rectifier, enabling RF and high-speed data line protection |
| Category 1 metallurgical bond | Internal bond structure qualified for MIL-PRF-19500/530 and space-grade reliability requirements |
| Triple-layer passivation | Enhanced surface stability against humidity, contamination, and long-term parameter drift |
| Radiation hardness | Inherently radiation-tolerant per Microsemi MicroNote 050 - suitable for LEO satellite payloads |
| IEC61000-4-2/4-4 compliance | Validated ESD (±15 kV air/±8 kV contact) and EFT (40 A) immunity without external filtering |
Applications
| RF Transceiver Front-End Protection | Avionics Data Bus Interface |
|---|---|
Use Scenario: Protecting 50 Ω RF input of S-band transceivers from lightning-induced surges and ESD events. IC Role / Device Role / Timing Role: Unidirectional TVS placed directly at SMA connector feedthrough to clamp transients before LNA input. Use Value: 4 pF capacitance avoids impedance mismatch and insertion loss; 77.0 V clamping preserves LNA's 55 V absolute maximum rating. | Use Scenario: Safeguarding ARINC 429 receiver inputs in flight control computers exposed to aircraft static discharge. IC Role / Device Role / Timing Role: Standoff-rated TVS on differential receive lines, referenced to chassis ground with controlled trace routing. Use Value: –55 °C to +175 °C operation meets DO-160 Section 25 temp extremes; Category 1 bond ensures no latent failure after 100k surge cycles. |
| Downhole Telemetry Signal Lines | Military Radar Pulse Modulator |
Use Scenario: Shielding RS-485 telemetry links in oil/gas wellhead controllers operating at 150 °C ambient. IC Role / Device Role / Timing Role: Axial-leaded TVS mounted directly across twisted-pair lines with minimal lead length. Use Value: Hermetic glass seal prevents moisture ingress at 20 kpsi pressure; 150 W PPP handles switching transients from solenoid drivers. | Use Scenario: Clamping gate-drive transients in GaN-based radar modulator switches subjected to fast dV/dt edges. IC Role / Device Role / Timing Role: Low-inductance TVS placed at gate-source terminals to suppress Miller-induced overshoot. Use Value: 11.7 A IPP capacity absorbs 100 ns spikes without thermal runaway; 0.5 µA ID prevents DC bias error in precision gate control. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N8170US | Same electrical specs but non-RoHS (tin/lead plating); no "E3" suffix | Permitted only in legacy military/aerospace programs exempt from RoHS | Select 1N8170US only when leaded finish is mandated by qualification documentation |
| SMBJ53A-E3/54 | Higher 53.3 V VWM, 87.1 V VC at 10.5 A, 100 W PPP, SMC package | Surface-mount alternative with lower power rating and higher clamping voltage | Choose SMBJ53A-E3/54 only for space-constrained PCBs where axial leads are impractical |
Compared with 1N8170USE3/TR, 1N8170US offers identical performance with leaded termination for heritage systems, while SMBJ53A-E3/54 trades axial robustness and 150 W capability for SMT compatibility - neither is pin-compatible, but both serve overlapping high-reliability transient suppression roles.
Availability
1N8170USE3/TR is available at Aetrix Electronics and suitable for RF front-end protection, avionics data bus interfaces, and downhole telemetry requiring stable component supply across extended temperature and radiation environments.
Supply support for 1N8170USE3/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and RF semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation tolerance and extended-temperature operation.
The 1N8149–1N8182 family targets mission-critical transient protection where failure is unacceptable - engineered for hermetic reliability, low capacitance, and compliance with MIL-STD-750, DO-160, and IEC61000 standards.
FAQ
What is the clamping voltage of the 1N8170USE3/TR under standard 10/1000 µs surge conditions?
The 1N8170USE3/TR has a maximum peak clamping voltage (VC) of 77.0 V at 11.7 A peak impulse current (IPP) under the standardized 10/1000 µs waveform. This value is measured at 25 °C ambient and defines the upper voltage limit imposed on protected circuitry during transient events - critical for ensuring downstream components remain within their absolute maximum ratings.
Does the 1N8170USE3/TR meet IEC61000-4-2 ESD immunity requirements?
Yes, the 1N8170USE3/TR provides ESD protection compliant with IEC61000-4-2 up to ±15 kV (air discharge) and ±8 kV (contact discharge). Its low 4 pF capacitance and fast response time enable effective charge diversion without degrading high-speed signal integrity - verified in Microsemi's characterization reports for the full 1N8149–1N8182 series.
What is the meaning of the "USE3/TR" suffix in 1N8170USE3/TR?
The "USE3/TR" suffix indicates RoHS-compliant matte tin plating ("E3") and tape-and-reel packaging ("TR"). The "U" denotes the MELF-style axial-leaded variant within the 1N81xx family, distinguishing it from through-hole versions without "U". This exact ordering code ensures traceable sourcing of the RoHS-compliant, surface-mount-ready version of the 1N8170USE3/TR.
Can the 1N8170USE3/TR be used in bidirectional protection configurations?
No - the 1N8170USE3/TR is strictly unidirectional. Bidirectional protection requires two units mounted in anti-parallel, as shown in Figure 5 of the T4-LDS datasheet. This configuration doubles total capacitance to 8 pF but maintains low clamping and high surge capability - a deliberate design trade-off documented for RF and high-speed applications where symmetrical transient suppression is required.
What is the thermal resistance and maximum junction temperature rating for the 1N8170USE3/TR?
The 1N8170USE3/TR has a thermal resistance of 150 °C/W (junction-to-ambient) and a maximum junction temperature (TJ) rating of +175 °C. Its hermetic hard-glass package enables reliable operation across –55 °C to +175 °C, making it suitable for downhole, avionics, and space applications where thermal cycling and extreme ambient conditions are routine.
1N8170USE3/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 53V
- Voltage - Breakdown (Min):
- 58.9V
- Voltage - Clamping (Max) @ Ipp:
- 85.3V
- Current - Peak Pulse (10/1000µs):
- 1.76A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8170USE3/TR FAQ
1.How can I place an order for 1N8170USE3/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8170USE3/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8170USE3/TR reliable?
The price and inventory of 1N8170USE3/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8170USE3/TR is usually 5 days.
3.What payment methods are accepted for 1N8170USE3/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8170USE3/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8170USE3/TR?
1N8170USE3/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8170USE3/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8170USE3/TR?
For technical support, including 1N8170USE3/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8170USE3/TR requirements.
6.How does Aetrix verify that 1N8170USE3/TR is sourced from the original manufacturer or authorized distributors?
All 1N8170USE3/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8170USE3/TR meets industry standards.
7.What is the process for return or replacement of 1N8170USE3/TR?
All 1N8170USE3/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8170USE3/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8170USE3/TR part is unused and in its original packaging.
Return procedure for 1N8170USE3/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8170USE3/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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