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Microchip Technology 1N8170US/TR
- Part No.:
- 1N8170US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8170US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:5,157
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Product details
Overview
1N8170US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 53.0 V working standoff voltage (VWM), 77.0 V peak clamping voltage (VC) at 11.7 A IPP, 4 pF capacitance, and 150 W peak pulse power rating for high-frequency signal line protection in aerospace and defense systems.
For engineers reviewing the 1N8170US/TR datasheet, 1N8170US/TR pinout, 1N8170US/TR application, or 1N8170US/TR equivalent, this device delivers ultra-low capacitance ESD/IEC61000-4-2 and EFT/IEC61000-4-4 protection while maintaining robust Category 1 metallurgical bonding and hard-glass hermetic sealing for mission-critical reliability.
Technical Context
The 1N8170US/TR implements a unique series-connected rectifier diode opposite the TVS junction to achieve 4 pF total capacitance-lowest among 150 W-rated TVS devices. Its unidirectional architecture provides inverse blocking up to 53.0 V (VWIB) with only 0.5 µA leakage (IIB) at that voltage.
Rated for operation from –55 °C to +175 °C, it sustains 150 W peak pulse power (10/1000 µs waveform) and exhibits a breakdown voltage temperature coefficient of 0.104 %/°C. Thermal resistance junction-to-ambient is 150 °C/W on standard PCB mounting.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 53.0 V - Maximum continuous reverse standoff voltage before conduction begins |
| VC @ IPP | 77.0 V at 11.7 A - Clamping voltage during 10/1000 µs surge, limiting downstream voltage stress |
| CT | 4 pF - Enables protection of >1 GHz RF lines and high-baud-rate data interfaces without signal distortion |
| PPP | 150 W - Peak transient energy absorption capability per IEC61000-4-5 Level 3/4 secondary lightning surges |
| TJ Range | –55 °C to +175 °C - Supports operation in extended-temperature avionics and downhole electronics |
| RθJA | 150 °C/W - Requires minimal PCB copper area for thermal management under steady-state conditions |
| VWIB | 53.0 V - Matches system-level DC blocking requirements in protected analog front-ends |
Pinout & Package
Package: Axial-leaded, hermetically sealed voidless hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink (reverse-biased path) | Connected to protected line; conducts surge current toward ground when Vline exceeds VWM |
| Cathode | Reference node / ground return | Connected to system ground or low-impedance reference; polarity marked by band on glass body |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal moisture ingress and long-term parameter drift in vacuum or high-humidity environments |
| Category 1 metallurgical bond | Meets MIL-STD-780 reliability criteria for aerospace-grade interconnect integrity under thermal cycling and vibration |
| Triple-layer passivation | Prevents surface leakage and contamination-induced failure in high-radiation or particle-contaminated enclosures |
| Lowest 150 W TVS capacitance | 4 pF enables protection of GPS L1/L2, radar IF, and 10 GbE SerDes without degrading signal integrity |
| Nonsensitive to ESD (MIL-STD-750 Method 1020) | Withstands handling and assembly without pre-failure, eliminating need for special ESD workstations |
Applications
| GPS Receiver Front-End Protection | Aerospace Data Bus Transceiver |
|---|---|
Use Scenario: Protecting L1-band (1.575 GHz) antenna feedlines from induced transients during lightning proximity events. IC Role / Device Role / Timing Role: Unidirectional TVS placed between antenna port and LNA input, shunting surge energy before it reaches sensitive GaAs MMIC stages. Use Value: 4 pF capacitance preserves VSWR <1.3:1 across 1.5–1.6 GHz; 77.0 V clamping prevents LNA gate oxide breakdown during 1 kV/m H-field coupling. | Use Scenario: Safeguarding ARINC 429 or MIL-STD-1553B differential receivers against ESD discharge from connector mating cycles. IC Role / Device Role / Timing Role: Discrete TVS mounted directly at board-edge connectors, clamping common-mode surges on isolated receive lines. Use Value: 0.5 µA leakage at 53 V ensures no DC bias shift in high-impedance receiver inputs; hermetic seal prevents corrosion in humid cabin environments. |
| Downhole Telemetry Modem | Radar Signal Chain Protection |
Use Scenario: Shielding RS-485 telemetry links in oil/gas wellhead controllers exposed to switching surges from solenoid drivers. IC Role / Device Role / Timing Role: TVS placed on twisted-pair lines entering ASIC interface, operating continuously at +150 °C ambient. Use Value: Stable 53 V VWM and 0.104 %/°C αV(BR) ensure predictable clamping across full temperature range; 175 °C max TJ supports extended downhole runtime. | Use Scenario: Protecting IF amplifiers and mixers in X-band radar receivers from fast-rising ESD events during maintenance access. IC Role / Device Role / Timing Role: Low-capacitance TVS installed at RF module input ports, minimizing insertion loss and group delay variation. Use Value: 4 pF CT adds <0.02 dB insertion loss at 10 GHz; 150 W PPP handles multi-kV ESD without parametric shift or catastrophic failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ51A | Surface-mount DO-214AB package; 51 V VWM; 8.5 pF CT; 1500 W PPP rating | Higher capacitance limits use above 500 MHz; higher PPP suits lower-frequency industrial surges | Select for cost-sensitive commercial designs where SMT assembly and moderate RF performance are acceptable |
| 1N6377 | Axial-leaded glass DO-41; 51 V VWM; 10 pF CT; 150 W PPP; non-hermetic construction | Lacks Category 1 bond and triple passivation; not rated for >125 °C continuous operation | Choose for non-mission-critical industrial controls where extended temperature and radiation hardness are not required |
Compared with SMCJ51A and 1N6377, the 1N8170US/TR uniquely combines hermetic sealing, 4 pF capacitance, and Category 1 bonding-making it the only option qualified for RF front-end protection in flight-critical avionics and space-qualified telemetry systems.
Availability
1N8170US/TR is available at Aetrix Electronics and suitable for GPS receiver front-ends, aerospace data bus transceivers, and downhole telemetry modems requiring stable component supply across extended product lifecycles.
Supply support for 1N8170US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for defense, aerospace, and industrial markets.
The 1N8170US/TR belongs to Microsemi's legacy T4-LDS series of hermetically sealed TVS diodes, engineered specifically for ultra-low-capacitance transient protection in frequency-sensitive, high-reliability electronic subsystems where failure is not an option.
FAQ
What is the maximum clamping voltage of the 1N8170US/TR under a 10/1000 µs surge?
The 1N8170US/TR has a maximum peak clamping voltage (VC) of 77.0 V when subjected to its rated peak impulse current (IPP) of 11.7 A under the standard 10/1000 µs waveform. This value is measured at TA = 25 °C and defines the upper voltage limit imposed on protected circuitry during transient events. The 1N8170US/TR maintains this clamping performance across its full operating temperature range due to its specified temperature coefficient of breakdown voltage.
Is the 1N8170US/TR suitable for bidirectional transient protection?
The 1N8170US/TR is a unidirectional TVS diode and is not inherently bidirectional. However, bidirectional protection can be achieved by connecting two 1N8170US/TR devices in anti-parallel configuration, as documented in Microsemi's Figure 5. This arrangement doubles the effective capacitance to 8 pF but retains the same clamping performance in both polarities. For native bidirectional operation, a dedicated symmetric TVS would be required-not the 1N8170US/TR.
Does the 1N8170US/TR meet IEC61000-4-2 and IEC61000-4-4 compliance?
Yes, the 1N8170US/TR is explicitly rated for ESD protection per IEC61000-4-2 and EFT protection per IEC61000-4-4, as stated in the Applications/Benefits section of its official datasheet. Its 4 pF capacitance, low leakage, and fast response enable reliable suppression of contact and air-discharge ESD events up to ±15 kV, and burst transients up to ±2 kV, without compromising signal fidelity in high-speed or RF circuits.
What is the thermal resistance and maximum junction temperature of the 1N8170US/TR?
The 1N8170US/TR has a thermal resistance junction-to-ambient (RθJA) of 150 °C/W under standard PCB mounting conditions, and a maximum junction temperature (TJ) rating of +175 °C. Its minimum storage temperature is –55 °C. These ratings allow operation in extreme environments such as avionics bays and downhole tools, provided steady-state power dissipation remains below 1.0 W and transient duty cycle stays within the 0.01% impulse repetition limit.
How does the "Category 1 metallurgical bond" in the 1N8170US/TR improve reliability?
The Category 1 metallurgical bond in the 1N8170US/TR refers to a high-integrity internal interconnect structure qualified per MIL-STD-780 for aerospace applications. It ensures mechanical stability under severe thermal cycling (–55 °C to +175 °C), shock, and vibration-preventing bond lift-off or interfacial delamination. This bond type is a key factor enabling the 1N8170US/TR's use in flight-critical systems where latent failures cannot be tolerated, distinguishing it from commercial-grade TVS diodes.
1N8170US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 53V
- Voltage - Breakdown (Min):
- 58.9V
- Voltage - Clamping (Max) @ Ipp:
- 85.3V
- Current - Peak Pulse (10/1000µs):
- 1.76A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8170US/TR FAQ
1.How can I place an order for 1N8170US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8170US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8170US/TR reliable?
The price and inventory of 1N8170US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8170US/TR is usually 5 days.
3.What payment methods are accepted for 1N8170US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8170US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8170US/TR?
1N8170US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8170US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8170US/TR?
For technical support, including 1N8170US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8170US/TR requirements.
6.How does Aetrix verify that 1N8170US/TR is sourced from the original manufacturer or authorized distributors?
All 1N8170US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8170US/TR meets industry standards.
7.What is the process for return or replacement of 1N8170US/TR?
All 1N8170US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8170US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8170US/TR part is unused and in its original packaging.
Return procedure for 1N8170US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8170US/TR Tags
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