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Microchip Technology 1N8171USE3/TR
- Part No.:
- 1N8171USE3/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8171USE3/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
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Product details
Overview
1N8171USE3/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 64.6 V minimum breakdown voltage, 58.0 V working standoff voltage, 93.7 V maximum clamping voltage at 300 A peak impulse current, 4 pF capacitance, and 150 W peak pulse power rating at 10/1000 µs. It employs a series-opposed rectifier diode architecture to achieve ultra-low capacitance for high-frequency signal line protection in aerospace and defense systems.
For engineers reviewing the 1N8171USE3/TR datasheet, 1N8171USE3/TR pinout, 1N8171USE3/TR application, or 1N8171USE3/TR equivalent, key selection criteria include its Category 1 metallurgical bond reliability, RoHS-compliant e3 marking, axial-leaded hard-glass package, and IEC61000-4-2/4-4/4-5 compliance for ESD, EFT, and secondary lightning protection.
Technical Context
This TVS uses a unique dual-die configuration: a primary avalanche diode in series with a reverse-oriented rectifier diode, enabling 4 pF total capacitance while maintaining 150 W surge capability. Its voidless hermetic glass construction ensures zero internal voids and stable parametric performance across -55 °C to +175 °C junction temperature range.
The device delivers 93.7 V clamping voltage at 300 A IPP under 10/1000 µs waveform, with 0.104 %/°C breakdown voltage temperature coefficient and 0.5 µA standby current at 58.0 V standoff. Its Category 1 internal metallurgical bond meets MIL-STD-750 method 1020 for ESD insensitivity and radiation hardness per MicroNote 050.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage (VBR) | 64.6 V min at 1 mA - defines minimum voltage at which avalanche conduction begins, ensuring reliable turn-on above system operating voltage. |
| Working Standoff Voltage (VWM) | 58.0 V max - maximum continuous DC or peak reverse voltage the device blocks without significant leakage. |
| Clamping Voltage (VC) | 93.7 V max at 300 A IPP (10/1000 µs) - limits transient-induced voltage seen by protected circuitry during surge events. |
| Peak Pulse Power (PPP) | 150 W at 25 °C - sustained surge energy handling capacity under standard test conditions. |
| Capacitance (CT) | 4 pF at 0 V - enables use on >1 GHz RF lines and high-speed data interfaces without signal integrity degradation. |
| Junction Temperature Range | -55 °C to +175 °C - supports operation in extreme environments including avionics, downhole, and space-grade applications. |
| Leakage Current (ID) | 0.5 µA max at 58.0 V - ensures minimal power loss and noise injection in high-impedance bias networks. |
Pinout & Package
Package: Axial-leaded voidless hermetically sealed hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink (forward-biased during clamping) | Connected to protected signal line; conducts surge current toward ground when VAK exceeds VBR. |
| Cathode | Reference terminal (marked with band) | Connected to system ground or low-impedance return path; establishes polarity-sensitive unidirectional clamping behavior. |
Key Features
| Feature | Design Value |
|---|---|
| Series-opposed diode architecture | Enables 4 pF capacitance while preserving 150 W surge rating-critical for RF front-end and high-speed serial link protection. |
| Category 1 metallurgical bond | Guarantees zero voids and interfacial stability under thermal cycling and mechanical shock-required for JANS/JANTXV-level reliability programs. |
| Voidless hermetic glass seal | Eliminates moisture ingress and parameter drift over time-ensures long-term parametric consistency in sealed enclosures. |
| Triple-layer passivation | Prevents surface leakage and contamination-induced failure-essential for high-humidity and salt-fog operational environments. |
| IEC61000-4-2/4-4/4-5 compliance | Validated protection against ±8 kV contact / ±15 kV air ESD, 4 kV EFT bursts, and 2 kV line-to-line lightning surges-meets DO-160 Section 22 Level 3. |
Applications
| Radar Transceiver Front-End | Satellite Telemetry Downlink |
|---|---|
Use Scenario: Protection of L-band RF receive paths against induced transients from nearby radar pulses or power switching noise. IC Role / Device Role / Timing Role: Unidirectional TVS placed between antenna port and LNA input to clamp surges below LNA damage threshold while adding <4 pF parasitic load. Use Value: Maintains signal integrity up to 2 GHz with <0.1 dB insertion loss; prevents LNA saturation or permanent gate oxide damage during field deployment. |
Use Scenario: Guarding S-band telemetry receivers against ESD events during ground handling and launch vibration-induced tribocharging. IC Role / Device Role / Timing Role: Standoff-rated TVS on differential RS-422 telemetry lines, leveraging 58.0 V VWM to tolerate nominal ±5 V signaling while clamping >93 V transients. Use Value: Survives >100,000 ESD strikes per MIL-STD-750 Method 1020 without parameter shift-ensures mission-critical data continuity. |
| Aerospace Avionics Data Bus | Downhole Oilfield Sensor Interface |
Use Scenario: Shielding ARINC 429 or MIL-STD-1553B data lines from coupling-induced transients in aircraft power distribution zones. IC Role / Device Role / Timing Role: Unidirectional clamping device on bus stubs, selected for 93.7 V VC to stay below receiver absolute maximum ratings under worst-case surge. Use Value: Enables compliance with DO-160 Section 22 Level 3 lightning immunity without altering bus termination or timing margins. |
Use Scenario: Protecting 4–20 mA sensor outputs in high-temperature (>150 °C) wellhead electronics exposed to lightning-induced ground potential rise. IC Role / Device Role / Timing Role: High-temp-rated TVS on analog output stage, using -55 °C to +175 °C TJ range to operate continuously at 175 °C ambient with derated power. Use Value: Eliminates need for external heat sinking; maintains 0.5 µA leakage at full temperature range-preserves loop accuracy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N8171US | Same electrical specs but non-RoHS (blank suffix); lead-tin plating instead of matte tin. | Permitted only in legacy military programs requiring non-RoHS materials per QPL-1N8171. | Select 1N8171US only if RoHS exemption documentation is approved and tin whisker risk is mitigated via conformal coating. |
| SMCJ58A | Surface-mount SMC package; 64.4 V VBR; 93.6 V VC at 302 A; 4.5 pF; lower thermal resistance (RθJA = 100 °C/W). | Designed for automated assembly; unsuitable for through-hole or high-reliability hermetic requirements. | Choose SMCJ58A for cost-sensitive commercial designs where reflow compatibility and board density outweigh hermeticity needs. |
Compared with 1N8171USE3/TR, 1N8171US lacks RoHS compliance and requires different procurement controls, while SMCJ58A trades hermetic reliability and axial mounting flexibility for SMT manufacturability and slightly better thermal performance-making the former suitable for legacy aerospace builds and the latter for volume industrial PCBs.
Availability
1N8171USE3/TR is available at Aetrix Electronics and suitable for radar front-end protection, satellite telemetry interfaces, avionics data buses, and downhole sensor conditioning requiring stable component supply across extended temperature and reliability lifecycles.
Supply support for 1N8171USE3/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and aerospace-grade components with deep heritage in defense and space electronics.
The 1N8171USE3/TR belongs to Microsemi's legacy "LDS" series of hermetically sealed TVS diodes, engineered specifically for mission-critical transient suppression where failure is not an option-targeting MIL-PRF-19500 qualified systems and DO-160-compliant platforms.
FAQ
What is the clamping voltage of the 1N8171USE3/TR under standard surge conditions?
The 1N8171USE3/TR has a maximum clamping voltage (VC) of 93.7 V when subjected to a 300 A peak impulse current with a 10/1000 µs waveform at 25 °C. This value is measured across the anode and cathode terminals during transient conduction and defines the upper voltage limit imposed on protected circuitry. The 1N8171USE3/TR maintains this clamping performance across its full operating temperature range with appropriate derating.
Does the 1N8171USE3/TR meet aerospace-grade reliability standards?
Yes, the 1N8171USE3/TR incorporates Category 1 internal metallurgical bonds, voidless hermetic glass packaging, and triple-layer passivation-all validated per MIL-STD-750 Method 1020 for ESD insensitivity and radiation hardness per Microsemi MicroNote 050. Its construction qualifies it for JANTXV-level applications and DO-160 Section 22 compliance, making the 1N8171USE3/TR suitable for flight-critical avionics and space systems.
How does the series-opposed diode architecture of the 1N8171USE3/TR reduce capacitance?
The 1N8171USE3/TR integrates a primary avalanche TVS diode in series with a reverse-oriented rectifier diode, creating a high-impedance path at zero bias that reduces total junction capacitance to 4 pF. This architecture avoids the trade-off between low capacitance and high surge rating found in conventional planar TVS devices. The result is a 150 W-rated device with RF-friendly characteristics-enabling the 1N8171USE3/TR to protect high-speed interfaces without signal distortion.
What is the maximum steady-state power dissipation for the 1N8171USE3/TR?
The 1N8171USE3/TR has a maximum steady-state (average) power dissipation (PM(AV)) of 1.0 W at 25 °C ambient temperature, assuming controlled thermal resistance from mounting point to ambient. Its thermal resistance junction-to-ambient (RθJA) is 150 °C/W, meaning junction temperature rise is directly proportional to power dissipation. Derating is required above 25 °C per the published curve in Figure 3 of the datasheet-critical for sustained operation in the 1N8171USE3/TR's -55 °C to +175 °C junction range.
Is the 1N8171USE3/TR compatible with lead-free soldering processes?
Yes, the 1N8171USE3/TR carries the "e3" RoHS compliance designation and features matte tin plating over copper leads rated for 260 °C for up to 10 seconds-fully compatible with standard lead-free reflow profiles. Its hard-glass hermetic package withstands thermal shock without cracking or seal degradation, and the internal metallurgical bond remains stable through multiple thermal cycles-ensuring long-term reliability after soldering the 1N8171USE3/TR into high-reliability assemblies.
1N8171USE3/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 58V
- Voltage - Breakdown (Min):
- 64.6V
- Voltage - Clamping (Max) @ Ipp:
- 93.7V
- Current - Peak Pulse (10/1000µs):
- 1.6A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8171USE3/TR FAQ
1.How can I place an order for 1N8171USE3/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8171USE3/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8171USE3/TR reliable?
The price and inventory of 1N8171USE3/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8171USE3/TR is usually 5 days.
3.What payment methods are accepted for 1N8171USE3/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8171USE3/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8171USE3/TR?
1N8171USE3/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8171USE3/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8171USE3/TR?
For technical support, including 1N8171USE3/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8171USE3/TR requirements.
6.How does Aetrix verify that 1N8171USE3/TR is sourced from the original manufacturer or authorized distributors?
All 1N8171USE3/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8171USE3/TR meets industry standards.
7.What is the process for return or replacement of 1N8171USE3/TR?
All 1N8171USE3/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8171USE3/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8171USE3/TR part is unused and in its original packaging.
Return procedure for 1N8171USE3/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8171USE3/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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