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Microchip Technology 1N8171US/TR
- Part No.:
- 1N8171US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8171US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:3,160
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Product details
Overview
1N8171US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 4 pF capacitance, 58.0 V working standoff voltage (VWM), and 150 W peak pulse power at 10/1000 µs. It features internal Category 1 metallurgical bonding and is designed for high-reliability ESD/EFT protection in RF front-ends and aerospace data links.
For engineers reviewing the 1N8171US/TR datasheet, 1N8171US/TR pinout, 1N8171US/TR application, or 1N8171US/TR equivalent, this device delivers verified low-capacitance transient suppression with clamping voltage of 85.3 V at 11.7 A IPP, RoHS-compliant axial-leaded packaging, and IEC61000-4-2/4-4 compliance - critical for signal integrity in high-frequency analog interfaces.
Technical Context
This TVS uses a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF capacitance while maintaining unidirectional operation. Its hard-glass hermetic package ensures zero voids and supports operation from –55 °C to +175 °C junction temperature.
The device provides precise 58.0 V working standoff voltage (VWM) with 64.6 V minimum breakdown voltage (V(BR)) at 1 mA, clamps to 85.3 V at 11.7 A peak impulse current (IPP), and exhibits only 0.104 %/°C temperature coefficient of breakdown voltage - enabling stable performance across extended thermal ranges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 58.0 V - maximum continuous reverse-biased operating voltage before conduction begins |
| V(BR) min | 64.6 V at 1 mA - guaranteed breakdown threshold ensuring predictable turn-on behavior |
| VC @ IPP | 85.3 V at 11.7 A - clamping voltage during 10/1000 µs surge, limiting downstream voltage stress |
| Capacitance | 4 pF at 0 V - enables use in >1 GHz RF paths without signal distortion or insertion loss |
| PPP | 150 W at 25 °C - robust surge handling for lightning-induced transients per IEC61000-4-5 Level 3 |
| TJ Range | –55 to +175 °C - qualified for aerospace, downhole, and military embedded systems |
| αV(BR) | 0.104 %/°C - minimal drift over temperature, supporting stable protection thresholds |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal under forward bias | Connected to protected circuit's ground or low-side reference point |
| Cathode | Negative terminal; marked with band | Connected to signal line or power rail requiring transient clamping |
Key Features
| Feature | Design Value |
|---|---|
| Low capacitance architecture | 4 pF achieved via integrated anti-parallel rectifier, preserving RF signal fidelity up to 2 GHz |
| Category 1 metallurgical bond | Internal bond structure qualified for high-reliability applications including space-grade systems |
| Hermetic voidless glass seal | Eliminates moisture ingress and long-term parameter drift in humid or corrosive environments |
| IEC61000-4-2/4-4 compliance | Validated 30 kV air / 15 kV contact ESD and 4 kV EFT immunity without degradation |
| Triple-layer passivation | Enhanced surface stability against contamination and leakage current rise under bias |
Applications
| Radar Transceiver Front-End | Satellite Telemetry Link |
|---|---|
Use Scenario: Protecting L-band RF amplifiers and mixers from induced surges during antenna switching or lightning proximity events. IC Role / Device Role / Timing Role: Unidirectional clamping element placed directly at RF port input, shunting transients to ground before reaching sensitive GaAs MMIC stages. Use Value: 4 pF capacitance prevents impedance mismatch and gain roll-off above 1.2 GHz; 85.3 V clamping limits voltage excursion within amplifier absolute maximum ratings. | Use Scenario: Safeguarding S-band telemetry receivers on LEO satellites exposed to electrostatic discharge during launch and orbital charging. IC Role / Device Role / Timing Role: Standoff-rated TVS on downlink signal path between antenna feed and low-noise amplifier input. Use Value: –55 to +175 °C operation accommodates orbital thermal cycling; hermetic seal prevents outgassing-induced failure in vacuum. |
| Aerospace Avionics Data Bus | High-Speed Test Equipment Interface |
Use Scenario: Transient protection on ARINC 429 or MIL-STD-1553B data lines in flight control computers subject to induced coupling from actuator switching. IC Role / Device Role / Timing Role: Unidirectional suppressor on receive-side signal line, referenced to chassis ground with cathode tied to signal. Use Value: 58.0 V VWM matches bus common-mode range; 11.7 A IPP handles worst-case coupled energy without latch-up. | Use Scenario: Guarding 10 Gbps serial test probe inputs against accidental ESD during automated board-level testing. IC Role / Device Role / Timing Role: Low-capacitance guard diode mounted directly at SMA connector pad to minimize stub inductance. Use Value: 4 pF capacitance avoids resonance with probe parasitics; 150 W PPP withstands multiple 8 kV HBM discharges without parameter shift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ58A | Surface-mount SMB package; 65.2 V V(BR) min; 4.5 pF capacitance; 600 W PPP rating | Higher power but larger capacitance; not hermetically sealed; unsuitable for vacuum or extreme thermal cycling | Select when PCB space is constrained and hermeticity is not required; verify layout for thermal dissipation |
| 1N6379 | Axial-leaded, non-hermetic glass; 58.0 V VWM; 100 W PPP; 10 pF capacitance; no Category 1 bond | Lower reliability grade; higher capacitance degrades >500 MHz signal integrity; not radiation-hardened | Select only for commercial-grade industrial controls where cost outweighs RF performance and lifetime assurance |
Compared with SMBJ58A and 1N6379, the 1N8171US/TR uniquely combines hermetic voidless construction, 4 pF capacitance, and Category 1 metallurgical bonding - making it the sole choice for RF-critical, high-reliability, or space-qualified transient suppression where parameter stability and long-term seal integrity are non-negotiable.
Availability
1N8171US/TR is available at Aetrix Electronics and suitable for radar transceivers, satellite telemetry links, and aerospace avionics data buses requiring stable component supply with guaranteed long-term availability and traceable sourcing.
Supply support for 1N8171US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for defense, aerospace, and industrial markets.
The 1N8171US/TR belongs to Microsemi's legacy high-reliability TVS family, engineered specifically for mission-critical transient protection in RF-sensitive and thermally extreme environments - emphasizing hermeticity, low capacitance, and parameter stability over cost-optimized alternatives.
FAQ
What is the clamping voltage of the 1N8171US/TR at its rated peak impulse current?
The 1N8171US/TR clamps to 85.3 V at its specified peak impulse current (IPP) of 11.7 A under the standard 10/1000 µs waveform. This value is measured and guaranteed per Microsemi's T4-LDS-xxxx datasheet, ensuring predictable voltage limiting during surge events without exceeding downstream component absolute maximum ratings.
Is the 1N8171US/TR RoHS compliant?
Yes, the 1N8171US/TR is RoHS compliant, featuring matte tin plating over copper leads per the "e3" designation in Microsemi's nomenclature. The device meets EU Directive 2011/65/EU requirements, with lead content below 1000 ppm and full compliance documentation available through Microchip's product change notifications.
Does the 1N8171US/TR have a bidirectional configuration option?
No, the 1N8171US/TR is strictly unidirectional. Bidirectional protection requires two 1N8171US/TR devices mounted in anti-parallel configuration, which doubles total capacitance to 8 pF. Microsemi explicitly documents this method in Figure 5 of the T4-LDS-xxxx datasheet for applications needing symmetrical clamping.
What is the thermal resistance junction-to-ambient for the 1N8171US/TR?
The thermal resistance junction-to-ambient (RθJA) for the 1N8171US/TR is 150 °C/W, as specified in the Maximum Ratings table of the T4-LDS-xxxx datasheet. This value assumes standard PCB mounting with controlled thermal resistance; derating is required above 25 °C ambient per the Figure 3 derating curve.
Can the 1N8171US/TR be used for IEC61000-4-5 lightning surge protection?
Yes, the 1N8171US/TR is validated for secondary lightning surge protection per select levels of IEC61000-4-5, supported by its 150 W peak pulse power rating at 10/1000 µs and 85.3 V clamping voltage. System-level compliance requires proper PCB layout, grounding, and coordination with upstream MOVs or gas discharge tubes for primary protection staging.
1N8171US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 58V
- Voltage - Breakdown (Min):
- 64.6V
- Voltage - Clamping (Max) @ Ipp:
- 93.7V
- Current - Peak Pulse (10/1000µs):
- 1.6A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8171US/TR FAQ
1.How can I place an order for 1N8171US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8171US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8171US/TR reliable?
The price and inventory of 1N8171US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8171US/TR is usually 5 days.
3.What payment methods are accepted for 1N8171US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8171US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8171US/TR?
1N8171US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8171US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8171US/TR?
For technical support, including 1N8171US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8171US/TR requirements.
6.How does Aetrix verify that 1N8171US/TR is sourced from the original manufacturer or authorized distributors?
All 1N8171US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8171US/TR meets industry standards.
7.What is the process for return or replacement of 1N8171US/TR?
All 1N8171US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8171US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8171US/TR part is unused and in its original packaging.
Return procedure for 1N8171US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8171US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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