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Microchip Technology 1N8172USE3/TR
- Part No.:
- 1N8172USE3/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8172USE3/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:6,720
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Product details
Overview
1N8172USE3/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 4 pF capacitance, 64 V working standoff voltage (VWM), and 150 W peak pulse power at 10/1000 µs. It features internal Category 1 metallurgical bonds and low-leakage operation (≤0.5 µA at 64 V), designed for ESD/EFT protection in high-frequency telecom and aerospace signal lines.
For engineers reviewing the 1N8172USE3/TR datasheet, 1N8172USE3/TR pinout, 1N8172USE3/TR application, or 1N8172USE3/TR equivalent, key selection criteria include clamping voltage (103 V at 300 A), temperature coefficient of breakdown voltage (+0.105 %/°C), RoHS-compliant matte tin plating, and axial-leaded hard-glass package suitability for high-reliability through-hole mounting.
Technical Context
This TVS uses a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF capacitance while maintaining unidirectional surge suppression. Its hermetically sealed voidless glass construction enables operation from −55 °C to +175 °C with thermal resistance of 150 °C/W.
The device delivers 300 A peak impulse current (IPP) at 10/1000 µs with 103 V clamping voltage (VC), and exhibits <0.5 µA standby current at rated 64 V standoff. Its breakdown voltage is 71.3 V minimum at 1 mA, with ±5% tolerance and +0.105 %/°C temperature coefficient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 64 V - maximum continuous reverse operating voltage before conduction begins |
| V(BR) min | 71.3 V at 1 mA - guaranteed minimum breakdown threshold for reliable triggering |
| VC @ IPP | 103 V at 300 A - clamped voltage during worst-case surge, limiting downstream stress |
| CT | 4 pF - enables protection of >1 GHz RF interfaces without signal degradation |
| PPP | 150 W at 10/1000 µs - robust energy absorption for lightning-induced transients |
| ID @ VWM | ≤0.5 µA - negligible leakage ensures minimal DC loading on protected circuits |
| TJ range | −55 °C to +175 °C - supports extended-temperature avionics and downhole electronics |
Pinout & Package
Package: Axial-leaded voidless hermetically sealed hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink (reverse-biased side) | Connected to protected line; conducts surge current to ground when V > VWM |
| Cathode | Reference terminal (marked with band) | Connected to system ground; defines polarity and establishes unidirectional clamping behavior |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low capacitance | 4 pF enables protection of high-speed data lines (e.g., RS-485, CAN FD, RF front-ends) without bandwidth loss |
| Category 1 metallurgical bond | Internal bond structure qualified for high-reliability applications including space and military systems |
| Voidless hermetic seal | Eliminates moisture ingress and long-term parameter drift in harsh environments |
| Triple-layer passivation | Enhances surface insulation and prevents leakage path formation under humidity or contamination |
| ESD/EFT compliance | Meets IEC61000-4-2 (ESD) and IEC61000-4-4 (EFT) immunity standards out-of-the-box |
Applications
| Telecom Line Protection | Aerospace Avionics Bus |
|---|---|
Use Scenario: Protecting RS-422/RS-485 differential pairs in ground station modems exposed to induced lightning surges. IC Role / Device Role / Timing Role: Unidirectional TVS placed across each signal line and chassis ground to clamp transients before receiver input stages. Use Value: 4 pF capacitance avoids signal integrity degradation at 10 Mbps+, while 103 V clamping ensures FPGA I/O stays within safe voltage margins. | Use Scenario: Safeguarding MIL-STD-1553B data bus stubs in satellite payload controllers subject to single-event transients. IC Role / Device Role / Timing Role: Discrete TVS mounted directly at connector entry points to shunt ESD and coupled noise into chassis ground. Use Value: −55 °C to +175 °C operation and Category 1 bonding ensure reliability across orbital thermal cycles and radiation exposure. |
| Medical Imaging Signal Chain | Industrial Ethernet PHY Interface |
Use Scenario: Shielding analog front-end inputs of ultrasound beamformer ASICs from ESD events during probe handling. IC Role / Device Role / Timing Role: Low-capacitance TVS placed at PCB edge connectors to prevent latch-up in precision ADC drivers. Use Value: ≤0.5 µA leakage preserves DC accuracy of mV-level sensor signals; hermetic seal prevents parametric shift in sterilized environments. | Use Scenario: Protecting 100BASE-TX transformer-coupled PHY lanes in factory automation gateways installed near motor drives. IC Role / Device Role / Timing Role: TVS array configured per lane (TX+/TX−, RX+/RX−) to suppress repetitive EFT bursts from variable-frequency drives. Use Value: 150 W PPP rating sustains repeated 5 kHz burst immunity per IEC61000-4-4 Level 4 without degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ64A | Higher 15 pF capacitance; 64 V VWM; 600 W PPP; DO-214AA package | Surface-mount only; unsuitable for >500 MHz signal paths due to capacitance | Select when board space is constrained and high-frequency performance is not required |
| 1N6139A | Same 64 V VWM; 100 W PPP; 10 pF CT; axial-leaded glass package; non-RoHS | Lacks Category 1 bonding and triple-layer passivation; lower surge endurance | Acceptable for commercial-grade industrial use where radiation hardness and long-term hermeticity are not mandated |
Compared with SMBJ64A and 1N6139A, the 1N8172USE3/TR uniquely combines 4 pF capacitance, RoHS compliance, Category 1 bonding, and hermetic sealing-making it the only option qualified for high-frequency, high-reliability aerospace and medical signal protection where parameter stability over lifetime is critical.
Availability
1N8172USE3/TR is available at Aetrix Electronics and suitable for telecom line protection, aerospace avionics bus safeguarding, and medical imaging signal chain hardening requiring stable component supply across extended product lifecycles.
Supply support for 1N8172USE3/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and hermetically sealed components.
The 1N8172USE3/TR belongs to Microsemi's legacy 1N81xxUS series of low-capacitance TVS diodes engineered specifically for high-frequency transient suppression in mission-critical systems where failure is not an option.
FAQ
What is the clamping voltage of the 1N8172USE3/TR at its rated peak impulse current?
The 1N8172USE3/TR has a maximum clamping voltage (VC) of 103 V at 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value ensures that protected circuitry remains below absolute maximum ratings during surge events. The 1N8172USE3/TR achieves this performance while maintaining only 4 pF total capacitance, distinguishing it from higher-capacitance alternatives.
Is the 1N8172USE3/TR suitable for bidirectional transient protection?
No-the 1N8172USE3/TR is a unidirectional TVS. For bidirectional protection, two 1N8172USE3/TR devices must be connected in anti-parallel, as documented in Microsemi's Figure 5. This configuration doubles the effective capacitance to 8 pF but retains the same clamping performance per polarity. The 1N8172USE3/TR itself does not support symmetrical surge conduction.
Does the 1N8172USE3/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes-the 1N8172USE3/TR is explicitly rated for ESD protection per IEC61000-4-2 and electrical fast transient (EFT) immunity per IEC61000-4-4, as stated in the official Microsemi datasheet. Its 4 pF capacitance, low leakage (<0.5 µA), and 103 V clamping voltage enable compliant system-level performance without additional filtering. The 1N8172USE3/TR achieves this while retaining hermetic reliability for long-life deployments.
What is the junction temperature range for continuous operation of the 1N8172USE3/TR?
The 1N8172USE3/TR supports continuous operation from −55 °C to +175 °C, matching its storage temperature range. This extended range is enabled by voidless hermetic sealing and Category 1 internal metallurgical bonds. At +175 °C, derating applies per the datasheet's Figure 3 curve, reducing allowable steady-state power to ~0.3 W. The 1N8172USE3/TR maintains full 150 W pulse capability across the entire range when ambient conditions permit.
How does the "e3" suffix in 1N8172USE3/TR indicate RoHS compliance?
The "e3" suffix in 1N8172USE3/TR denotes RoHS-compliant matte tin plating on the axial leads, per JEDEC standard J-STD-609. This replaces traditional tin/lead plating while maintaining solderability and corrosion resistance. The "TR" suffix indicates tape-and-reel packaging per EIA-296. All 1N8172USE3/TR units are manufactured to RoHS Directive 2011/65/EU requirements, with no exemptions applied. The 1N8172USE3/TR documentation confirms full compliance without reliance on exemption clauses.
1N8172USE3/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 64V
- Voltage - Breakdown (Min):
- 71.3V
- Voltage - Clamping (Max) @ Ipp:
- 103V
- Current - Peak Pulse (10/1000µs):
- 1.45A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8172USE3/TR FAQ
1.How can I place an order for 1N8172USE3/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8172USE3/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8172USE3/TR reliable?
The price and inventory of 1N8172USE3/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8172USE3/TR is usually 5 days.
3.What payment methods are accepted for 1N8172USE3/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8172USE3/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8172USE3/TR?
1N8172USE3/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8172USE3/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8172USE3/TR?
For technical support, including 1N8172USE3/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8172USE3/TR requirements.
6.How does Aetrix verify that 1N8172USE3/TR is sourced from the original manufacturer or authorized distributors?
All 1N8172USE3/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8172USE3/TR meets industry standards.
7.What is the process for return or replacement of 1N8172USE3/TR?
All 1N8172USE3/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8172USE3/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8172USE3/TR part is unused and in its original packaging.
Return procedure for 1N8172USE3/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8172USE3/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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