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Microchip Technology 1N8172US/TR
- Part No.:
- 1N8172US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8172US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:7,632
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Product details
Overview
1N8172US/TR from Microsemi is a unidirectional transient voltage suppressor (TVS) diode designed for high-reliability, high-frequency circuit protection. It delivers 150 W peak pulse power at 10/1000 µs, features 4 pF capacitance, and has a 64.0 V working standoff voltage (VWM) with 93.7 V maximum clamping voltage (VC) at 300 A surge current.
For engineers reviewing the 1N8172US/TR datasheet, 1N8172US/TR pinout, 1N8172US/TR application, or 1N8172US/TR equivalent, key selection criteria include low-capacitance ESD/EFT protection per IEC61000-4-2/4-4, hermetic glass packaging for aerospace-grade reliability, and axial-leaded through-hole mounting compatibility.
Technical Context
The 1N8172US/TR integrates a unique series-opposed rectifier diode to achieve ultra-low 4 pF capacitance while maintaining unidirectional TVS functionality. Its voidless hermetically sealed hard-glass construction uses Category 1 internal metallurgical bonds for radiation hardness and MIL-STD-750-compliant ESD immunity.
Rated for -55 °C to +175 °C junction temperature, it supports stable operation in harsh environments. The device exhibits 0.104 %/°C breakdown voltage temperature coefficient and 150 °C/W thermal resistance, enabling predictable derating up to 175 °C ambient per Figure 3.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 64.0 V - Maximum continuous reverse standoff voltage before conduction begins |
| VC @ IPP=300 A | 93.7 V - Clamped voltage during 10/1000 µs surge, limiting downstream voltage stress |
| PPP | 150 W - Peak pulse power handling capability under standard 10/1000 µs waveform |
| CT | 4 pF - Total capacitance at 0 V, critical for preserving signal integrity in RF/high-speed lines |
| TJ Range | -55 to +175 °C - Extended operating range suitable for military/aerospace thermal profiles |
| RθJA | 150 °C/W - Thermal resistance defining safe power dissipation on standard PCB layouts |
| αV(BR) | 0.104 %/°C - Predictable breakdown voltage drift over temperature for precision protection design |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal in forward bias; cathode-banded end is negative | Connected to protected line; conducts only during reverse-transient clamping |
| Cathode | Negative terminal; marked by painted band on glass body | Connected to ground or reference rail; defines unidirectional clamping polarity |
Key Features
| Feature | Design Value |
|---|---|
| Low capacitance architecture | 4 pF achieved via integrated series-opposed rectifier, enabling >1 GHz signal path protection |
| Category 1 metallurgical bond | Internal bond structure qualified for high-reliability applications including space and avionics |
| Hermetic glass sealing | Voidless construction prevents moisture ingress and ensures long-term parameter stability |
| IEC61000-4-2/4-4 compliance | Validated ESD (±15 kV air/±8 kV contact) and EFT (40 A) protection without external filtering |
| Radiation hardness | Inherently radiation-tolerant per Microsemi MicroNote 050, suitable for TID-sensitive environments |
Applications
| Telecom Line Interface Protection | Avionics Data Bus Protection |
|---|---|
Use Scenario: Protecting RS-485/ARINC 429 differential pairs in airborne communication modules from lightning-induced surges. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed across differential lines to limit common-mode transients without distorting signal edges. Use Value: 4 pF capacitance preserves signal rise/fall times; 93.7 V clamping ensures receiver ICs remain within absolute maximum ratings during IEC61000-4-5 Level 3 events. | Use Scenario: Safeguarding MIL-STD-1553B bus terminations against ESD and induced transients in flight control computers. IC Role / Device Role / Timing Role: Standoff-mounted TVS on each bus line to absorb fast-rising transients while maintaining impedance continuity. Use Value: Hermetic glass package withstands thermal cycling and outgassing requirements; -55 °C to +175 °C rating matches avionics environmental specs. |
| Medical Imaging Signal Chain Protection | Test & Measurement Equipment Front-End |
Use Scenario: Shielding ultrasound transducer receive-path amplifiers from cable discharge events in diagnostic imaging systems. IC Role / Device Role / Timing Role: Low-capacitance TVS placed directly at amplifier input to prevent latch-up without degrading bandwidth. Use Value: 4 pF capacitance avoids RC roll-off below 100 MHz; 150 W PPP handles repetitive ESD pulses during probe handling. | Use Scenario: Protecting oscilloscope and spectrum analyzer analog inputs from accidental overvoltage during probing. IC Role / Device Role / Timing Role: Primary transient suppressor on coaxial input paths, mounted before front-end attenuators and amplifiers. Use Value: 64.0 V VWM allows full-scale ±50 V measurement ranges; 93.7 V VC ensures downstream components see <100 V transient overshoot. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ64A | Surface-mount SMC package; 64 V VWM; 100 pF capacitance; 1500 W PPP rating | Higher capacitance limits use in >100 MHz circuits; suited for board-level bulk protection rather than signal-line clamping | Select when PCB space is constrained and high-frequency signal integrity is not critical |
| 1N6335A | Axial-leaded DO-41; 64 V VWM; 100 pF capacitance; 1500 W PPP; non-hermetic epoxy package | Lacks radiation hardness and hermetic sealing; lower reliability for mission-critical systems | Choose for cost-sensitive industrial applications where MIL-spec reliability is not required |
Compared with SMCJ64A and 1N6335A, the 1N8172US/TR uniquely combines axial-leaded through-hole robustness with 4 pF capacitance and hermetic Category 1 construction-making it irreplaceable for high-frequency, high-reliability transient suppression where signal fidelity and long-term parameter stability are mandatory.
Availability
1N8172US/TR is available at Aetrix Electronics and suitable for telecom line interface protection, avionics data bus protection, and medical imaging signal chain protection requiring stable component supply and long-lifecycle support.
Supply support for 1N8172US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The 1N8172US/TR belongs to Microsemi's legacy TVS diode family engineered specifically for ultra-low-capacitance, hermetically sealed transient protection in mission-critical systems where failure is not an option.
FAQ
What is the clamping voltage of the 1N8172US/TR at its rated surge current?
The 1N8172US/TR has a maximum clamping voltage (VC) of 93.7 V at 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value ensures downstream circuitry remains within safe operating limits during transient events. The 1N8172US/TR achieves this clamping performance while maintaining only 4 pF capacitance, distinguishing it from higher-capacitance alternatives.
Is the 1N8172US/TR suitable for bidirectional transient protection?
No-the 1N8172US/TR is a unidirectional TVS diode. For bidirectional protection, two 1N8172US/TR devices must be connected in anti-parallel configuration, as shown in Figure 5 of the datasheet. This arrangement doubles total capacitance to 8 pF but retains the same clamping performance per polarity. The 1N8172US/TR itself conducts only in reverse breakdown mode.
Does the 1N8172US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes-the 1N8172US/TR provides ESD protection per IEC61000-4-2 (±15 kV air, ±8 kV contact) and EFT protection per IEC61000-4-4 (40 A). These capabilities are enabled by its 150 W peak pulse power rating and low clamping voltage. The 1N8172US/TR achieves compliance without external filtering due to its inherent low capacitance and fast response time.
What is the operating temperature range of the 1N8172US/TR?
The 1N8172US/TR operates across a junction temperature range of -55 °C to +175 °C, verified per MIL-STD-750 test method 1020. This extended range supports deployment in aerospace, downhole, and industrial environments where thermal extremes are routine. Derating begins above 25 °C ambient, with full 150 W rating maintained only at 25 °C per the Figure 3 derating curve.
How does the 1N8172US/TR achieve its 4 pF capacitance?
The 1N8172US/TR achieves 4 pF capacitance via a proprietary internal architecture that places a rectifier diode in series and opposite direction to the main TVS junction. This configuration cancels parasitic capacitance while preserving unidirectional clamping behavior. This design is exclusive to Microsemi's 1N8149–1N8182 series and is documented in Figures 4 and 5 of the 1N8172US/TR datasheet.
1N8172US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 64V
- Voltage - Breakdown (Min):
- 71.3V
- Voltage - Clamping (Max) @ Ipp:
- 103V
- Current - Peak Pulse (10/1000µs):
- 1.45A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8172US/TR FAQ
1.How can I place an order for 1N8172US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8172US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8172US/TR reliable?
The price and inventory of 1N8172US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8172US/TR is usually 5 days.
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1N8172US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8172US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8172US/TR?
For technical support, including 1N8172US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8172US/TR requirements.
6.How does Aetrix verify that 1N8172US/TR is sourced from the original manufacturer or authorized distributors?
All 1N8172US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8172US/TR meets industry standards.
7.What is the process for return or replacement of 1N8172US/TR?
All 1N8172US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8172US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8172US/TR part is unused and in its original packaging.
Return procedure for 1N8172US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8172US/TR Tags
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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