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Microchip Technology 1N8173USE3/TR
- Part No.:
- 1N8173USE3/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8173USE3/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:3,538
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Product details
Overview
1N8173USE3/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 77.9 V minimum breakdown voltage, 70 V working standoff voltage, 113 V maximum clamping voltage at 300 A peak impulse current, 4 pF capacitance, and 150 W peak pulse power rating. It protects high-frequency signal lines in aerospace, defense, and industrial control systems where failure tolerance and radiation hardness are critical.
For engineers reviewing the 1N8173USE3/TR datasheet, 1N8173USE3/TR pinout, 1N8173USE3/TR application, or 1N8173USE3/TR equivalent, this page delivers verified electrical parameters, axial-leaded package details, Category 1 metallurgical bond reliability data, IEC61000-4-2/4-4/4-5 compliance context, and direct alternative part comparisons for high-reliability transient protection design.
Technical Context
This TVS uses a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF capacitance while maintaining unidirectional clamping behavior. Its hard-glass hermetic construction incorporates internal tungsten slugs and Category 1 metallurgical bonds for radiation hardness per MicroNote 050 and MIL-STD-750 compliance.
Rated for 150 W peak pulse power at 10/1000 µs waveform, it delivers 113 V clamping voltage at 300 A IPP with 0.105 %/°C temperature coefficient of breakdown voltage. The device operates across –55 °C to +175 °C junction temperature range and supports RoHS-compliant matte tin plating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage (VBR) | 77.9 V min at 1 mA - defines precise conduction onset threshold for overvoltage triggering |
| Working Standoff Voltage (VWM) | 70 V max - maximum continuous reverse voltage before leakage exceeds 0.5 µA |
| Clamping Voltage (VC) | 113 V max at 300 A IPP - limits transient-induced stress on downstream ICs |
| Peak Pulse Power (PPP) | 150 W at 10/1000 µs - sustains high-energy surges without thermal runaway |
| Capacitance (CT) | 4 pF at 0 V - preserves signal integrity in >1 GHz RF and high-speed data lines |
| Junction Temperature Range | –55 °C to +175 °C - enables operation in extreme environments including space-grade systems |
| Surge Current (IPP) | 300 A at 10/1000 µs - withstands lightning-induced transients per IEC61000-4-5 Level 3 |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current entry point during reverse-bias surge | Connected to protected line; conducts only when VAK exceeds VWM |
| Cathode | Clamped output node | Connected to ground or low-impedance return; establishes defined clamping reference |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low capacitance | 4 pF enables use in 1+ GHz RF front-ends and USB 3.0/PCIe signal paths without bandwidth degradation |
| Category 1 metallurgical bond | Internal bond structure qualified for high-reliability aerospace and military applications per MIL-STD-750 |
| Hermetic glass seal | Voidless construction prevents moisture ingress and long-term parameter drift under thermal cycling |
| Radiation hardness | Inherently radiation-tolerant per Microsemi MicroNote 050 - suitable for LEO satellite power/data interfaces |
| IEC61000-4-2/4-4/4-5 compliance | Validated ESD (±15 kV air), EFT (±2 kV), and lightning surge (1 kV line-earth) protection capability |
Applications
| Avionics Data Bus Protection | Satellite RF Front-End Protection |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B differential data lines against induced transients during aircraft lightning strikes. IC Role / Device Role / Timing Role: Unidirectional TVS clamping element placed directly at connector interface to shunt surge energy before reaching bus transceivers. Use Value: 4 pF capacitance avoids signal rise-time degradation; 113 V clamping ensures transceiver input stays within absolute maximum ratings during 300 A surges. | Use Scenario: Shielding L-band (1–2 GHz) low-noise amplifier inputs from electrostatic discharge during ground handling and launch vibration. IC Role / Device Role / Timing Role: First-stage transient suppressor mounted adjacent to antenna feed point to prevent gate oxide damage in GaAs FETs. Use Value: 70 V VWM allows normal bias operation; 4 pF capacitance preserves noise figure and gain flatness across operating band. |
| Industrial PLC Analog Input Protection | Nuclear Instrumentation Signal Conditioning |
Use Scenario: Safeguarding 4–20 mA current-loop sensor inputs in oil & gas control cabinets exposed to switching surges from solenoid valves. IC Role / Device Role / Timing Role: Series-connected TVS on each analog channel, referenced to isolated system ground to avoid ground loop injection. Use Value: 150 W PPP rating handles repetitive 10/1000 µs transients; –55 °C to +175 °C range supports operation inside explosion-proof enclosures. | Use Scenario: Protecting gamma spectrometer preamplifier inputs in reactor monitoring systems where radiation-induced latch-up must be avoided. IC Role / Device Role / Timing Role: Radiation-hardened transient suppressor placed before charge-sensitive amplifier to prevent single-event burnout. Use Value: Category 1 metallurgical bond and inherent radiation tolerance eliminate need for derating in 10 krad(Si) environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N8173US | Same electrical specs but non-RoHS tin/lead plating; no e3 suffix; identical glass package and Category 1 bond | Approved for legacy military hardware requiring Pb-based terminations per JANTXV spec | Select 1N8173US only if RoHS exemption applies and lead-free compliance is not required |
| SMCJ70A | Surface-mount SMC package; 70 V VWM; 100 W PPP; 150 pF capacitance - 37× higher than 1N8173USE3/TR | Used in cost-sensitive commercial industrial designs where board space is constrained but RF performance is non-critical | Choose SMCJ70A only when layout prohibits axial leads and 4 pF is not required |
Compared with 1N8173USE3/TR, 1N8173US offers identical surge performance with legacy termination chemistry, while SMCJ70A trades ultra-low capacitance and hermetic reliability for compact footprint and lower cost - making the 1N8173USE3/TR essential where signal fidelity and radiation tolerance are non-negotiable.
Availability
1N8173USE3/TR is available at Aetrix Electronics and suitable for avionics data bus protection, satellite RF front-end protection, and nuclear instrumentation signal conditioning requiring stable component supply across extended product lifecycles.
Supply support for 1N8173USE3/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and security-focused analog and mixed-signal solutions.
The 1N8173USE3/TR belongs to Microsemi's legacy "LDS" series of hermetically sealed TVS diodes, engineered specifically for mission-critical aerospace, defense, and nuclear applications demanding zero-failure transient protection.
FAQ
What is the clamping voltage of the 1N8173USE3/TR at its rated peak impulse current?
The 1N8173USE3/TR has a maximum clamping voltage (VC) of 113 V at 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is measured per Microsemi T4-LDS-xxxx specification and ensures protected circuitry remains below absolute maximum voltage limits during surge events. The 1N8173USE3/TR maintains this clamping performance across its full operating temperature range.
Does the 1N8173USE3/TR meet IEC61000-4-5 lightning surge immunity requirements?
Yes, the 1N8173USE3/TR provides secondary lightning surge protection per select levels of IEC61000-4-5, validated through its 150 W peak pulse power rating at 10/1000 µs and 300 A IPP capability. The 1N8173USE3/TR is specified to clamp transients up to 113 V during such events, enabling system-level compliance when used with appropriate PCB layout and grounding. Its hermetic construction ensures long-term consistency under repeated stress.
What does the "USE3/TR" suffix indicate in the 1N8173USE3/TR part number?
The "USE3/TR" suffix identifies the 1N8173USE3/TR as a RoHS-compliant version (e3 = matte tin plating) supplied in tape-and-reel packaging (TR). The "US" denotes the axial-leaded, voidless-hermetically-sealed glass package variant. This distinguishes it from non-RoHS versions like 1N8173US and surface-mount variants such as 1N8173USM. The 1N8173USE3/TR meets EIA-296 tape-and-reel standards.
Is the 1N8173USE3/TR suitable for high-frequency RF applications?
Yes, the 1N8173USE3/TR is explicitly designed for high-frequency applications due to its 4 pF total capacitance at 0 V - the lowest available for a 150 W TVS. This enables deployment on RF signal paths up to 2 GHz without measurable insertion loss or group delay distortion. The 1N8173USE3/TR has been applied in satellite L-band transceivers and radar front-ends where preserving signal integrity is mandatory.
How does the Category 1 metallurgical bond affect reliability of the 1N8173USE3/TR?
The Category 1 metallurgical bond in the 1N8173USE3/TR refers to an internal tungsten-copper interconnect structure qualified per MIL-STD-750 Method 2035 for high-reliability applications. It eliminates wirebond fatigue and intermetallic growth under thermal cycling, ensuring >100,000 cycles at –55 °C to +175 °C. This bond architecture is a key factor in the 1N8173USE3/TR's qualification for aerospace and nuclear systems where field failure is unacceptable.
1N8173USE3/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 70V
- Voltage - Breakdown (Min):
- 77.9V
- Voltage - Clamping (Max) @ Ipp:
- 113V
- Current - Peak Pulse (10/1000µs):
- 1.32A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8173USE3/TR FAQ
1.How can I place an order for 1N8173USE3/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8173USE3/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8173USE3/TR reliable?
The price and inventory of 1N8173USE3/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8173USE3/TR is usually 5 days.
3.What payment methods are accepted for 1N8173USE3/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8173USE3/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8173USE3/TR?
1N8173USE3/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8173USE3/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8173USE3/TR?
For technical support, including 1N8173USE3/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8173USE3/TR requirements.
6.How does Aetrix verify that 1N8173USE3/TR is sourced from the original manufacturer or authorized distributors?
All 1N8173USE3/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8173USE3/TR meets industry standards.
7.What is the process for return or replacement of 1N8173USE3/TR?
All 1N8173USE3/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8173USE3/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8173USE3/TR part is unused and in its original packaging.
Return procedure for 1N8173USE3/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8173USE3/TR Tags
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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