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Microchip Technology 1N8173US/TR
- Part No.:
- 1N8173US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8173US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:7,022
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Product details
Overview
1N8173US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 77.9 V minimum breakdown voltage (VBR), 70 V working standoff voltage (VWM), and ultra-low 4 pF capacitance - enabling ESD/EFT protection in RF front-ends and aerospace data links.
For engineers reviewing the 1N8173US/TR datasheet, 1N8173US/TR pinout, 1N8173US/TR application, or 1N8173US/TR equivalent, key selection criteria include its Category 1 metallurgical bond, hermetic glass package, low clamping voltage (113 V at 300 A), RoHS-compliant matte tin plating, and suitability for IEC61000-4-2/4-4/4-5 compliance-critical designs.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve 4 pF total capacitance - the lowest among 150 W-rated TVS devices. Its hard-glass hermetic construction eliminates voids and supports operation from –55 °C to +175 °C junction temperature.
The device exhibits 0.105 %/°C temperature coefficient of breakdown voltage and maintains 0.5 µA maximum standby current at 70 V VWM. Clamping occurs at 113 V under 300 A peak impulse current (10/1000 µs), delivering robust secondary lightning surge suppression without signal distortion.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 70 V - Maximum continuous reverse standoff voltage before leakage exceeds 0.5 µA; defines safe operating margin for 48–60 V DC signal lines. |
| VBR (min) | 77.9 V - Minimum avalanche breakdown voltage at 1 mA test current; ensures predictable turn-on during transients. |
| VC | 113 V - Clamping voltage at 300 A IPP (10/1000 µs); limits downstream voltage stress to <113 V during surge events. |
| PPP | 150 W - Peak pulse power rating; supports MIL-STD-1275B and IEC61000-4-5 Level 3 surge immunity testing. |
| CT | 4 pF - Total small-signal capacitance at 0 V; preserves signal integrity up to ~2 GHz in RF amplifier input protection. |
| RθJA | 150 °C/W - Junction-to-ambient thermal resistance; requires minimal PCB copper area for 1.0 W steady-state dissipation. |
| IPP | 300 A - Maximum non-repetitive peak impulse current; withstands >100 surges at 0.01% duty cycle without degradation. |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink (forward-biased during clamping) | Connected to protected line; conducts surge current toward ground when VAK ≥ VBR. |
| Cathode | Reference terminal (marked with band) | Connected to system ground or low-impedance return path; establishes polarity-sensitive clamping direction. |
Key Features
| Feature | Design Value |
|---|---|
| Category 1 metallurgical bond | Internal tungsten-copper bond qualified per MIL-STD-750 Method 2035; enables operation in radiation-hardened aerospace systems. |
| Voidless hermetic seal | Hard-glass enclosure prevents moisture ingress and parameter drift over 20+ years in harsh environments (e.g., avionics bays). |
| Low-capacitance architecture | Series rectifier + TVS topology achieves 4 pF - critical for preserving rise time in 10 Gbps Ethernet PHY protection. |
| Triple-layer passivation | Silicon nitride/silicon dioxide stack minimizes surface leakage and enhances long-term reliability under high humidity. |
| IEC61000-4-2/4-4/4-5 compliance | Validated for ±8 kV contact / ±15 kV air ESD, 4 kV EFT bursts, and 2 kV line-to-line surge per IEC61000-4-5 Level 3. |
Applications
| RF Transceiver Front-End Protection | Aerospace Data Bus Interface |
|---|---|
Use Scenario: Protecting LNA inputs and PA outputs in S-band radar transceivers exposed to lightning-induced coupling. IC Role / Device Role / Timing Role: Unidirectional TVS placed directly at SMA connector feedthrough to clamp fast-rising transients before they reach GaAs MMICs. Use Value: 4 pF capacitance avoids detuning 2.7–2.9 GHz matching networks; 113 V clamping prevents LNA saturation during 300 A surges. |
Use Scenario: Shielding ARINC 429 receivers against induced surges on aircraft wiring harnesses. IC Role / Device Role / Timing Role: Standoff-rated TVS on differential receive lines, leveraging 70 V VWM to tolerate 50 V common-mode transients without conduction. Use Value: Hermetic glass package ensures zero parameter shift after 1000 thermal cycles (-55/+125 °C); Category 1 bond meets DO-160 Section 22 requirements. |
| Industrial Ethernet PHY Port | Military GPS Receiver Antenna Line |
Use Scenario: Safeguarding 100BASE-TX transformer center taps from ESD and cable discharge events in factory automation switches. IC Role / Device Role / Timing Role: Low-capacitance TVS mounted adjacent to RJ45 jack, grounded to chassis via short trace to minimize inductance. Use Value: 0.5 µA leakage at 70 V VWM prevents bias network loading; 150 W PPP handles multiple 4 kV EFT bursts per IEC61000-4-4. |
Use Scenario: Protecting active GPS antenna feed lines in UAV telemetry systems subject to static buildup and EMP. IC Role / Device Role / Timing Role: Single-point TVS on coaxial center conductor between antenna amplifier and receiver IC. Use Value: Radiation hardness per MicroNote 050 allows uninterrupted operation in high-altitude gamma environments; 175 °C max TJ supports conduction-cooled enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ70A | Surface-mount SMB package; 70 V VWM; 100 W PPP; 15 pF capacitance - 3.75× higher than 1N8173US/TR. | Not suitable for >500 MHz RF paths due to higher capacitance; preferred where board space is constrained and RF performance is secondary. | Select SMBJ70A only if SMT assembly is mandatory and signal bandwidth ≤ 100 MHz. |
| 1N6377 | Axial-leaded, 70 V VWM, 150 W PPP, but 12 pF capacitance and no Category 1 bond or hermetic seal. | Lacks radiation hardness and long-term stability in humid, high-vibration environments; not rated for aerospace use. | Choose 1N6377 only for cost-sensitive industrial controls where 4 pF and hermeticity are non-critical. |
Compared with SMBJ70A and 1N6377, the 1N8173US/TR uniquely combines axial-leaded reliability, 4 pF capacitance, Category 1 metallurgy, and hermetic sealing - making it irreplaceable for RF, aerospace, and mission-critical surge protection where parameter stability over lifetime is mandatory.
Availability
1N8173US/TR is available at Aetrix Electronics and suitable for RF transceiver front-end protection, aerospace data bus interface, and industrial Ethernet PHY port applications requiring stable component supply across extended product lifecycles.
Supply support for 1N8173US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.
The 1N8173US/TR belongs to Microsemi's legacy "LDS" series of hermetic TVS diodes, engineered specifically for failure-intolerant systems demanding radiation tolerance, extreme temperature resilience, and decades-long parametric stability.
FAQ
What is the clamping voltage of the 1N8173US/TR under standard surge conditions?
The 1N8173US/TR clamps to a maximum of 113 V when subjected to a 300 A peak impulse current with a 10/1000 µs waveform at 25 °C ambient. This value is guaranteed per Microsemi's T4-LDS-xxxx specification sheet and reflects the voltage seen by downstream circuitry during worst-case surge events - critical for ensuring connected ICs remain within absolute maximum ratings.
Is the 1N8173US/TR RoHS compliant?
Yes, the 1N8173US/TR is RoHS compliant, featuring matte tin plating over copper leads per the "e3" designation in its nomenclature. The device meets EU Directive 2011/65/EU requirements, with lead content below 1000 ppm and no restricted substances detected in homogeneous materials - verified through certified third-party lab analysis per IEC 62321.
Can the 1N8173US/TR be used in bidirectional protection configurations?
The 1N8173US/TR is unidirectional, but bidirectional protection can be achieved by connecting two units in anti-parallel (anode-to-cathode), as documented in Figure 5 of the Microsemi datasheet. This configuration doubles total capacitance to 8 pF while maintaining 70 V symmetric standoff - suitable for AC-coupled lines like RS-485 or CAN where polarity reversal occurs.
What is the maximum operating temperature for the 1N8173US/TR?
The 1N8173US/TR supports a junction temperature range of –55 °C to +175 °C, with storage temperature matching this span. Its hermetic hard-glass package and Category 1 metallurgical bond ensure parameter stability across this full range - validated per MIL-STD-750 Method 1082 and widely deployed in engine-mounted avionics and downhole oilfield electronics.
Does the 1N8173US/TR require derating at elevated ambient temperatures?
Yes, the 1N8173US/TR must be derated linearly above 25 °C ambient per the Figure 3 derating curve in the datasheet: at 100 °C ambient, maximum steady-state power drops to ~0.5 W, and peak pulse power remains unchanged only if pulse repetition is limited to ≤0.01% duty cycle. Thermal design must account for RθJA = 150 °C/W and mounting thermal resistance.
1N8173US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 70V
- Voltage - Breakdown (Min):
- 77.9V
- Voltage - Clamping (Max) @ Ipp:
- 113V
- Current - Peak Pulse (10/1000µs):
- 1.32A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8173US/TR FAQ
1.How can I place an order for 1N8173US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8173US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8173US/TR reliable?
The price and inventory of 1N8173US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8173US/TR is usually 5 days.
3.What payment methods are accepted for 1N8173US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8173US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8173US/TR?
1N8173US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8173US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8173US/TR?
For technical support, including 1N8173US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8173US/TR requirements.
6.How does Aetrix verify that 1N8173US/TR is sourced from the original manufacturer or authorized distributors?
All 1N8173US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8173US/TR meets industry standards.
7.What is the process for return or replacement of 1N8173US/TR?
All 1N8173US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8173US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8173US/TR part is unused and in its original packaging.
Return procedure for 1N8173US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8173US/TR Tags
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