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Microchip Technology 1N8174USE3/TR
- Part No.:
- 1N8174USE3/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8174USE3/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:5,569
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Product details
Overview
1N8174USE3/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 4 pF capacitance, 75 V working standoff voltage (VWM), and 150 W peak pulse power at 10/1000 µs. It features internal Category 1 metallurgical bonds, triple-layer passivation, and RoHS-compliant matte tin plating for high-reliability ESD/EFT protection in aerospace and telecom front-end circuits.
For engineers reviewing the 1N8174USE3/TR datasheet, 1N8174USE3/TR pinout, 1N8174USE3/TR application, or 1N8174USE3/TR equivalent, key selection criteria include low-capacitance transient clamping, IEC61000-4-2/4-4 compliance, axial-leaded through-hole mounting, and robust hard-glass construction rated for -55°C to +175°C operation.
Technical Context
This TVS uses a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF capacitance while maintaining unidirectional clamping behavior. Its breakdown voltage is 86.5 V (min) at 1 mA, with clamping voltage of 125 V at 300 A peak impulse current under 10/1000 µs waveform.
The device employs voidless hermetic glass packaging with tungsten slugs and internal metallurgical bonding per Category 1 reliability standard. Thermal resistance is 150°C/W junction-to-ambient, supporting steady-state dissipation up to 1.0 W at 25°C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 75 V - Maximum continuous reverse standoff voltage before conduction begins; defines operating margin in protected signal lines. |
| V(BR) min | 86.5 V @ 1 mA - Minimum breakdown voltage threshold; ensures reliable triggering above normal operating voltage. |
| VC | 125 V @ IPP = 300 A - Clamping voltage during surge; limits downstream IC stress during lightning or ESD transients. |
| CT | 4 pF - Total capacitance at 0 V; enables use in >1 GHz RF interfaces without signal integrity degradation. |
| PPP | 150 W @ 10/1000 µs - Peak pulse power rating; supports MIL-STD-461/IEC61000-4-5 Level 3 secondary lightning protection. |
| TJ range | -55°C to +175°C - Junction temperature range; validated for extended-life deployment in avionics and downhole equipment. |
| ID max | 0.5 µA @ VWM - Standby leakage current; minimizes power loss in battery-backed or low-power sensor nodes. |
Pinout & Package
Package: Axial-leaded hermetically sealed voidless hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal under forward bias | Connected to protected line side; conducts only during reverse-transient clamping when cathode is held at higher potential. |
| Cathode | Negative terminal; marked with band | Connected to ground or common reference; establishes unidirectional clamping direction and defines polarity-sensitive placement. |
Key Features
| Feature | Design Value |
|---|---|
| Low capacitance architecture | 4 pF achieved via integrated anti-parallel rectifier diode-enables protection of high-speed data lines (e.g., RS-485, CAN FD) without bandwidth loss. |
| Category 1 metallurgical bond | Internal bond structure qualified for space-grade reliability; eliminates interfacial delamination risk under thermal cycling and vibration. |
| Triple-layer passivation | SiO₂/Si₃N₄/SiO₂ stack prevents moisture ingress and ion migration-critical for long-term stability in humid or saline environments. |
| Hermetic glass sealing | Voidless construction prevents internal gas evolution or pressure buildup-ensures parametric stability over 20+ year field life. |
Applications
| Telecom Line Interface Protection | Aerospace Avionics Power Bus |
|---|---|
Use Scenario: Protecting T1/E1 line drivers and receivers from induced surges on outdoor copper pairs. IC Role / Device Role / Timing Role: Unidirectional TVS placed between line transformer secondary and PHY IC input. Use Value: 4 pF capacitance avoids signal distortion at 2.048 MHz framing rate; 125 V clamping prevents latch-up in 3.3 V LVDS receivers. | Use Scenario: Safeguarding 28 V DC power distribution nodes in flight control computers against load dump and inductive kickback. IC Role / Device Role / Timing Role: Primary transient clamp on main bus feed prior to point-of-load regulators. Use Value: 150 W rating handles 50 ms load-dump transients; -55°C to +175°C range supports operation across cabin-to-engine bay zones. |
| Medical Imaging Sensor Front-End | Industrial Ethernet PHY Protection |
Use Scenario: Shielding ultrasound transducer receive-chain amplifiers from ESD events during probe handling. IC Role / Device Role / Timing Role: Low-capacitance TVS on analog front-end inputs upstream of instrumentation amplifier. Use Value: Sub-5 pF capacitance preserves >10 MHz bandwidth; 0.5 µA leakage avoids DC offset drift in precision gain stages. | Use Scenario: Securing 100BASE-TX magnetics secondary windings against EFT bursts in factory automation gateways. IC Role / Device Role / Timing Role: Unidirectional clamp on differential pair outputs after isolation transformer. Use Value: IEC61000-4-4 compliance verified at 4 kV; axial leads allow manual rework and high-reliability solder joint inspection. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N8174US | No /TR tape-and-reel suffix; same electrical specs and package; non-RoHS (tin/lead plating). | Not suitable for RoHS-compliant production; requires lead-free process validation. | Select 1N8174US only for legacy repair or non-RoHS military programs where tin/lead solder is mandated. |
| SMBJ75A | Higher capacitance (150 pF), SMC package, 75 V VWM, 100 W PPP, 1.0 mm pitch surface mount. | Not suitable for high-frequency (>100 MHz) or high-reliability hermetic requirements; lacks Category 1 bond. | Choose SMBJ75A only for cost-sensitive industrial PCBs where board space is constrained and RF performance is not critical. |
Compared with 1N8174USE3/TR, 1N8174US offers identical protection performance but requires tin/lead assembly, while SMBJ75A trades hermetic reliability and ultra-low capacitance for compact SMT footprint and lower unit cost-making it appropriate only for non-critical commercial applications.
Availability
1N8174USE3/TR is available at Aetrix Electronics and suitable for telecom line interface protection, aerospace avionics power bus safeguarding, and medical imaging sensor front-end shielding requiring stable component supply across extended product lifecycles.
Supply support for 1N8174USE3/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and hermetically sealed components.
The 1N81xx series belongs to Microsemi's high-reliability TVS family engineered specifically for mission-critical transient suppression in environments where failure is not an option-including satellite payloads, flight control systems, and nuclear instrumentation.
FAQ
What is the clamping voltage of the 1N8174USE3/TR at its rated peak surge current?
The 1N8174USE3/TR has a maximum clamping voltage (VC) of 125 V at 300 A peak impulse current under the standard 10/1000 µs waveform. This value is measured with the device mounted on a standard FR-4 test board per JEDEC JESD22-A114, and defines the upper voltage limit imposed on protected circuitry during worst-case transients.
Is the 1N8174USE3/TR suitable for bidirectional transient protection?
No-the 1N8174USE3/TR is strictly unidirectional. For bidirectional protection, two 1N8174USE3/TR devices must be connected in anti-parallel per Figure 5 in the datasheet, resulting in doubled capacitance (8 pF). The device itself does not conduct in the forward direction beyond its 1.2 V diode drop and provides no clamping for positive transients on the anode.
Does the 1N8174USE3/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes-the 1N8174USE3/TR is explicitly rated for ESD protection per IEC61000-4-2 and EFT protection per IEC61000-4-4. Its 4 pF capacitance and fast response enable effective suppression of contact discharges up to ±15 kV and burst events up to ±4 kV, as validated in Microsemi's application testing documented in T4-LDS-xxxx.
What is the thermal resistance and maximum steady-state power dissipation of the 1N8174USE3/TR?
The 1N8174USE3/TR has a junction-to-ambient thermal resistance (RθJA) of 150°C/W and a maximum steady-state power dissipation (PM(AV)) of 1.0 W at TA = 25°C. Derating is required above 25°C ambient per the curve in Figure 3; at 70°C ambient, allowable average power drops to approximately 0.65 W.
How is the 1N8174USE3/TR marked and what does the 'e3' suffix indicate?
The 1N8174USE3/TR is marked with body paint and part number; the 'e3' suffix denotes RoHS-compliant matte tin plating over copper leads. The '/TR' indicates tape-and-reel packaging per EIA-296 standard, enabling automated SMT placement despite its axial-leaded form factor.
1N8174USE3/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 75V
- Voltage - Breakdown (Min):
- 86.5V
- Voltage - Clamping (Max) @ Ipp:
- 125V
- Current - Peak Pulse (10/1000µs):
- 1.2A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8174USE3/TR FAQ
1.How can I place an order for 1N8174USE3/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8174USE3/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8174USE3/TR reliable?
The price and inventory of 1N8174USE3/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8174USE3/TR is usually 5 days.
3.What payment methods are accepted for 1N8174USE3/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8174USE3/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8174USE3/TR?
1N8174USE3/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8174USE3/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8174USE3/TR?
For technical support, including 1N8174USE3/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8174USE3/TR requirements.
6.How does Aetrix verify that 1N8174USE3/TR is sourced from the original manufacturer or authorized distributors?
All 1N8174USE3/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8174USE3/TR meets industry standards.
7.What is the process for return or replacement of 1N8174USE3/TR?
All 1N8174USE3/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8174USE3/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8174USE3/TR part is unused and in its original packaging.
Return procedure for 1N8174USE3/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8174USE3/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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