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Microchip Technology 1N8174US/TR
- Part No.:
- 1N8174US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8174US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:4,177
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Product details
Overview
1N8174US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 70 V working standoff voltage (VWM), 113 V maximum clamping voltage (VC) at 300 A IPP, and ultra-low 4 pF capacitance - enabling ESD/EFT protection in RF, datacom, and avionics interfaces.
For engineers reviewing the 1N8174US/TR datasheet, 1N8174US/TR pinout, 1N8174US/TR application, or 1N8174US/TR equivalent, key selection criteria include low-capacitance transient suppression for >1 GHz signal integrity, Category 1 metallurgical bond reliability, hermetic glass package robustness, and IEC61000-4-2/4-4/4-5 compliance without PCB layout compromise.
Technical Context
The 1N8174US/TR integrates a TVS junction in series with an antiparallel rectifier diode to achieve 4 pF total capacitance - critical for preserving signal fidelity in high-speed analog and digital lines. Its unidirectional architecture provides reverse-biased clamping only, with cathode-band polarity marking and axial-leaded through-hole mounting.
Rated for -55°C to +175°C junction temperature, it uses hard-glass encapsulation with tungsten slugs and internal Category 1 metallurgical bonds - meeting MIL-STD-750 Method 1020 ESD immunity and radiation-hardened requirements per MicroNote 050. Steady-state power dissipation is 1.0 W at 25°C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 70 V - Maximum continuous reverse-bias voltage before clamping onset; defines safe operating range for protected signal lines. |
| VC @ IPP=300 A | 113 V - Clamped voltage during 10/1000 µs surge; limits downstream IC stress to ≤113 V under worst-case transients. |
| PPP | 150 W - Peak pulse power handling at 25°C; supports repeated lightning-induced surges per IEC61000-4-5 Level 3. |
| CT | 4 pF - Total terminal capacitance at 0 V; preserves signal integrity in >1 GHz RF paths and high-baud-rate serial links. |
| TJ Range | -55°C to +175°C - Extended thermal operating envelope suitable for aerospace, downhole, and military environments. |
| RθJA | 150 °C/W - Thermal resistance from junction to ambient; requires minimal heatsinking on standard FR-4 PCBs. |
| ID @ VWM | 0.5 µA - Standby leakage current at rated standoff; avoids DC loading in high-impedance sensor or reference circuits. |
Pinout & Package
Package: Axial-leaded, voidless-hermetically-sealed hard-glass case with tungsten slugs; cathode identified by band marking; RoHS-compliant matte tin plating over copper leads; weight ≈340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal in forward bias; connected to protected line's low-side reference | Accepts surge current during reverse-transient events when cathode is held at higher potential. |
| Cathode | Negative terminal; marked with band; connected to system ground or return path | Serves as clamping reference node; must be low-inductance connection to maintain <113 V VC under 300 A surge. |
Key Features
| Feature | Design Value |
|---|---|
| Low-capacitance architecture | 4 pF achieved via integrated antiparallel rectifier - enables protection of USB 3.0, HDMI, RF front-ends without signal degradation. |
| Category 1 metallurgical bond | Internal high-reliability bond structure qualified for mission-critical systems including avionics and space-grade electronics. |
| Hermetic glass seal | Voidless construction prevents moisture ingress and parameter drift over 20+ year field life in harsh environments. |
| IEC61000-4-2/4-4/4-5 compliance | Validated for ±15 kV contact / ±20 kV air ESD, 4 kV EFT bursts, and 2 kV line-to-line lightning surges - no external filtering required. |
Applications
| RF Transceiver Protection | Avionics Data Bus Interface |
|---|---|
Use Scenario: Protecting L-band antenna feedlines and transceiver I/Q ports from induced lightning transients and ESD during ground handling. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between RF port and ground, absorbing >300 A surges while adding <4 pF parasitic load. Use Value: Maintains VSWR <1.5:1 up to 2 GHz and prevents receiver front-end damage without degrading noise figure or gain flatness. | Use Scenario: Safeguarding ARINC 429 receive inputs against ESD events during maintenance and electromagnetic interference in flight control systems. IC Role / Device Role / Timing Role: Standoff-rated TVS on differential data lines, clamping transients before they reach the line receiver IC's input stage. Use Value: Ensures bit-error-free operation at 100 kbps with <0.5 µA leakage, eliminating false triggers caused by 15 kV ESD discharges. |
| Military Radar Signal Conditioning | Downhole Oilfield Sensor Interface |
Use Scenario: Shielding high-speed ADC clock and analog front-end inputs in ground-based radar modules exposed to EMP and lightning coupling. IC Role / Device Role / Timing Role: Low-capacitance TVS on clock distribution traces and analog sensor inputs, referenced to clean analog ground. Use Value: Prevents timing jitter increase beyond 1 ps RMS and maintains SNR >72 dB under 150 W surge conditions. | Use Scenario: Protecting 4–20 mA loop-powered pressure/temperature sensors deployed at 150°C wellhead environments subject to cable discharge events. IC Role / Device Role / Timing Role: Primary transient suppressor on two-wire sensor interface, mounted directly at connector entry point. Use Value: Survives 175°C junction temperature and delivers 150 W surge rating with zero parameter shift after 1000+ surge cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ70A | Surface-mount SMC package; 70 V VWM; 113 V VC @ 300 A; 150 W PPP; but 15 pF capacitance - 3.75× higher than 1N8174US/TR. | Not suitable for >500 MHz signal paths due to higher capacitance; preferred where board space is constrained and RF performance is secondary. | Select only when SMT assembly is mandatory and signal bandwidth <200 MHz. |
| 1N6334 | Axial-leaded, same 70 V VWM and 150 W rating, but 12 pF capacitance and no Category 1 bond or hermetic seal - commercial-grade reliability. | Lacks radiation hardness and long-term hermetic stability; unsuitable for aerospace or extended-life deployments. | Acceptable for industrial controls with <10-year service life and ambient <125°C. |
Compared with SMCJ70A and 1N6334, the 1N8174US/TR uniquely combines 4 pF capacitance, hermetic voidless glass packaging, and Category 1 metallurgical bonding - making it the sole option for RF-critical, high-reliability, and radiation-tolerant transient suppression where signal integrity and 20+ year field life are non-negotiable.
Availability
1N8174US/TR is available at Aetrix Electronics and suitable for RF transceiver protection, avionics data bus interfaces, and downhole oilfield sensor interfaces requiring stable component supply across extended product lifecycles.
Supply support for 1N8174US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and aerospace-grade components with legacy leadership in discrete protection devices.
The 1N81xxUS series was engineered specifically for defense, space, and high-frequency industrial systems demanding fail-safe transient suppression without compromising signal fidelity or long-term parametric stability.
FAQ
What is the clamping voltage of the 1N8174US/TR under a 300 A 10/1000 µs surge?
The 1N8174US/TR has a maximum clamping voltage (VC) of 113 V when subjected to a 300 A peak impulse current with a 10/1000 µs waveform at 25°C. This value is guaranteed per the Electrical Characteristics table on page 3 of the Microsemi T4-LDS-xxxx datasheet and ensures downstream circuitry remains within safe voltage limits during standardized lightning-surge testing per IEC61000-4-5.
Is the 1N8174US/TR RoHS compliant?
Yes, the 1N8174US/TR is RoHS compliant, as indicated by the "e3" suffix in its full nomenclature and confirmed in the Features section of the Microsemi datasheet. Its axial leads use matte tin plating over copper, satisfying EU Directive 2011/65/EU requirements without lead or other restricted substances.
Does the 1N8174US/TR support bidirectional transient protection?
No, the 1N8174US/TR is strictly unidirectional. Bidirectional protection requires two 1N8174US/TR devices mounted in anti-parallel configuration, as shown in Figure 5 of the datasheet - resulting in doubled capacitance (8 pF) but symmetrical clamping in both polarities.
What is the thermal resistance junction-to-ambient (RθJA) for the 1N8174US/TR?
The 1N8174US/TR has a thermal resistance of 150°C/W from junction to ambient, specified under standard PCB mounting conditions. This value assumes adequate copper pour and thermal relief design; exceeding 1.0 W steady-state power or operating above 25°C ambient requires derating per Figure 3 (Derating Curve) in the datasheet to maintain TJ ≤ 175°C.
Can the 1N8174US/TR be used in radiation-intensive environments such as space or nuclear facilities?
Yes, the 1N8174US/TR is inherently radiation-hardened per Microsemi MicroNote 050 and employs Category 1 metallurgical bonds and hermetic glass packaging - features validated for total ionizing dose (TID) tolerance and single-event effect (SEE) resilience in space-grade applications and high-radiation terrestrial systems.
1N8174US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 75V
- Voltage - Breakdown (Min):
- 86.5V
- Voltage - Clamping (Max) @ Ipp:
- 125V
- Current - Peak Pulse (10/1000µs):
- 1.2A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8174US/TR FAQ
1.How can I place an order for 1N8174US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8174US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8174US/TR reliable?
The price and inventory of 1N8174US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8174US/TR is usually 5 days.
3.What payment methods are accepted for 1N8174US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8174US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8174US/TR?
1N8174US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8174US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8174US/TR?
For technical support, including 1N8174US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8174US/TR requirements.
6.How does Aetrix verify that 1N8174US/TR is sourced from the original manufacturer or authorized distributors?
All 1N8174US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8174US/TR meets industry standards.
7.What is the process for return or replacement of 1N8174US/TR?
All 1N8174US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8174US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8174US/TR part is unused and in its original packaging.
Return procedure for 1N8174US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8174US/TR Tags
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