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Microchip Technology 1N8175USE3/TR
- Part No.:
- 1N8175USE3/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8175USE3/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:2,234
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Product details
Overview
1N8175USE3/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 4 pF capacitance, 82 V working standoff voltage (VWM), and 150 W peak pulse power at 10/1000 µs. It features internal Category 1 metallurgical bonds, triple-layer passivation, and RoHS-compliant matte tin plating for high-reliability aerospace and defense signal-line protection.
For engineers reviewing the 1N8175USE3/TR datasheet, 1N8175USE3/TR pinout, 1N8175USE3/TR application, or 1N8175USE3/TR equivalent, this device delivers low-capacitance ESD/EFT protection per IEC61000-4-2/4-4, secondary lightning surge suppression per IEC61000-4-5, and radiation-hardened performance validated per MicroNote 050 - critical for avionics data links and MIL-STD-750 qualified systems.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF capacitance while maintaining unidirectional clamping behavior. Its hard-glass hermetic package enables operation from −55 °C to +175 °C with 150 °C/W junction-to-ambient thermal resistance.
The device exhibits 137 V maximum clamping voltage (VC) at 300 A peak impulse current (IPP), with 0.106 %/°C breakdown voltage temperature coefficient and 0.5 µA standby current at 82 V standoff. It supports axial-leaded through-hole mounting and meets MIL-STD-750 Method 1020 for ESD insensitivity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 82 V - Maximum continuous reverse-biased operating voltage before clamping onset; sets safe signal swing margin for protected lines. |
| VC @ IPP = 300 A | 137 V - Clamped voltage during 10/1000 µs surge; defines worst-case overvoltage seen by downstream ICs. |
| CT | 4 pF - Total small-signal capacitance; enables use on >1 GHz RF/data lines without signal integrity degradation. |
| PPP | 150 W - Peak pulse power rating at 25 °C; determines survivability against IEC61000-4-5 Level 3–4 surges. |
| TJ Range | −55 to +175 °C - Full military-grade junction temperature range; supports operation in engine bays and space-grade enclosures. |
| ID @ VWM | 0.5 µA - Standby leakage at rated standoff; ensures minimal DC loading on high-impedance sensor or reference circuits. |
| αV(BR) | 0.106 %/°C - Temperature coefficient of breakdown voltage; enables stable clamping threshold across wide ambient swings. |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during forward conduction | Connected to protected line; conducts surge energy to ground when clamping threshold exceeded. |
| Cathode | Reference terminal with polarity band marking | Connected to system ground; establishes unidirectional clamping direction and defines VWM polarity. |
Key Features
| Feature | Design Value |
|---|---|
| Category 1 metallurgical bond | Internal high-reliability bond structure qualified for aerospace and defense applications per MIL-PRF-19500. |
| Triple-layer passivation | Enhanced surface stability under humidity, contamination, and thermal cycling - critical for long-life deployed systems. |
| Voidless hermetic seal | Eliminates internal moisture ingress and delamination risk over 20+ year service life in harsh environments. |
| Low capacitance architecture | 4 pF achieved via series rectifier-diode topology - preserves signal integrity on high-speed serial interfaces (e.g., RS-485, CAN FD). |
| Radiation hardness | Inherently radiation-tolerant per Microsemi MicroNote 050 - suitable for low-earth orbit and nuclear instrumentation. |
Applications
| Aerospace Data Bus Protection | Military Serial Interface Protection |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B data lines from induced lightning transients and ESD events in flight control computers. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between bus driver output and connector, referenced to chassis ground. Use Value: 4 pF capacitance avoids signal rise-time degradation on 1 Mbps differential buses; 137 V clamping limits fault voltage below receiver absolute max ratings. |
Use Scenario: Safeguarding RS-422/RS-485 transceivers in vehicle-mounted C4ISR terminals exposed to EMP and EFT. IC Role / Device Role / Timing Role: Line-side TVS on each differential pair, mounted adjacent to connector with short ground return path. Use Value: 150 W surge rating withstands IEC61000-4-5 Level 4 (4 kV) surges; −55 °C to +175 °C operation supports desert and arctic deployment. |
| Avionics Sensor Signal Conditioning | Nuclear Instrumentation Front-End |
Use Scenario: Shielding analog outputs of pressure/temperature sensors in engine monitoring systems from ignition noise and load dump spikes. IC Role / Device Role / Timing Role: Low-leakage TVS (0.5 µA ID) placed directly at sensor amplifier output, before cable harness entry. Use Value: Sub-µA standby current prevents DC offset errors in precision 24-bit ADC front-ends; hermetic seal resists oil and fuel vapor exposure. |
Use Scenario: Transient suppression on detector bias lines and preamplifier inputs in radiation detection equipment deployed near reactors. IC Role / Device Role / Timing Role: Radiation-hardened TVS selected per MicroNote 050, mounted on ceramic substrate with gold-plated leads. Use Value: Inherent TID tolerance eliminates need for additional shielding; 175 °C max junction temperature supports operation inside containment vessels. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ82A | Surface-mount SMC package; 100 W PPP; 4.5 pF capacitance; 137 V VC @ 243 A IPP. | Limited to PCB space-constrained designs; lacks hermetic seal and radiation hardness; not MIL-qualified. | Select when board area is constrained and full military reliability is not required. |
| 1N6330 | Axial-leaded, non-hermetic glass package; 150 W PPP; 10 pF capacitance; 137 V VC @ 300 A IPP; no Category 1 bond. | Lower cost alternative for commercial industrial use; unsuitable for aerospace due to moisture sensitivity and no radiation validation. | Choose for cost-sensitive terrestrial applications where 4 pF capacitance and hermeticity are not mandatory. |
Compared with SMCJ82A and 1N6330, the 1N8175USE3/TR uniquely combines hermetic sealing, 4 pF capacitance, Category 1 bonding, and radiation hardness - making it the only option qualified for flight-critical avionics and nuclear instrumentation where failure is not tolerable.
Availability
1N8175USE3/TR is available at Aetrix Electronics and suitable for aerospace data bus protection, military serial interface protection, and avionics sensor signal conditioning requiring stable component supply across extended product lifecycles.
Supply support for 1N8175USE3/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and aerospace-grade components.
The 1N8175USE3/TR belongs to Microsemi's legacy "LDS" series of hermetically sealed TVS diodes, engineered specifically for mission-critical transient protection in defense, space, and nuclear systems where zero-failure tolerance is mandated.
FAQ
What is the clamping voltage of the 1N8175USE3/TR at its rated peak impulse current?
The 1N8175USE3/TR has a maximum clamping voltage (VC) of 137 V at 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is measured at 25 °C and defines the upper voltage limit imposed on protected circuitry during a surge event. The 1N8175USE3/TR maintains this clamping performance across its full operating temperature range due to its low temperature coefficient of breakdown voltage (0.106 %/°C).
Is the 1N8175USE3/TR suitable for bidirectional transient protection?
No - the 1N8175USE3/TR is a unidirectional TVS diode. For bidirectional protection, two 1N8175USE3/TR devices must be connected in anti-parallel configuration, as documented in Figure 5 of the Microsemi datasheet. This arrangement doubles the total capacitance to 8 pF but provides symmetrical clamping for AC-coupled or floating signal lines.
Does the 1N8175USE3/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes - the 1N8175USE3/TR is explicitly rated for ESD protection per IEC61000-4-2 and electrical fast transient (EFT) immunity per IEC61000-4-4. Its 4 pF capacitance and low leakage (0.5 µA) enable effective high-frequency transient shunting without compromising signal fidelity on sensitive analog or digital lines.
What is the lead finish and RoHS status of the 1N8175USE3/TR?
The 1N8175USE3/TR features RoHS-compliant matte tin plating over copper leads, indicated by the "e3" suffix in its nomenclature. This finish meets JEDEC J-STD-020 moisture sensitivity level 1 requirements and supports standard reflow and wave soldering processes up to 260 °C for 10 seconds.
Can the 1N8175USE3/TR be used in radiation-intensive environments?
Yes - the 1N8175USE3/TR is inherently radiation-hardened as described in Microsemi MicroNote 050. Its hermetic glass package, tungsten slug construction, and Category 1 metallurgical bonds provide tolerance to total ionizing dose (TID) and single-event effects (SEE), making it suitable for satellite payloads and nuclear instrumentation where radiation-induced failure must be avoided.
1N8175USE3/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 82V
- Voltage - Breakdown (Min):
- 95V
- Voltage - Clamping (Max) @ Ipp:
- 137V
- Current - Peak Pulse (10/1000µs):
- 1.09A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8175USE3/TR FAQ
1.How can I place an order for 1N8175USE3/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8175USE3/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8175USE3/TR reliable?
The price and inventory of 1N8175USE3/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8175USE3/TR is usually 5 days.
3.What payment methods are accepted for 1N8175USE3/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8175USE3/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8175USE3/TR?
1N8175USE3/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8175USE3/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8175USE3/TR?
For technical support, including 1N8175USE3/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8175USE3/TR requirements.
6.How does Aetrix verify that 1N8175USE3/TR is sourced from the original manufacturer or authorized distributors?
All 1N8175USE3/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8175USE3/TR meets industry standards.
7.What is the process for return or replacement of 1N8175USE3/TR?
All 1N8175USE3/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8175USE3/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8175USE3/TR part is unused and in its original packaging.
Return procedure for 1N8175USE3/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8175USE3/TR Tags
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onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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