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Microchip Technology 1N8175US/TR
- Part No.:
- 1N8175US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8175US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:9,974
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Product details
Overview
1N8175US/TR from Microsemi is a unidirectional transient voltage suppressor (TVS) diode designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, features 4 pF capacitance, and has a working standoff voltage of 82 V with clamping voltage ≤137 V at 300 A surge current. It is used in aerospace-grade data links and RF front-end interfaces where low capacitance and hermetic reliability are critical.
For engineers reviewing the 1N8175US/TR datasheet, 1N8175US/TR pinout, 1N8175US/TR application, or 1N8175US/TR equivalent, key selection criteria include its voidless hermetically sealed glass package, Category 1 metallurgical bond, IEC61000-4-2/4-4/4-5 compliance, and axial-leaded through-hole mounting compatibility.
Technical Context
The 1N8175US/TR integrates a TVS junction in series with an antiparallel rectifier diode to achieve ultra-low 4 pF capacitance while maintaining unidirectional clamping behavior. Its hard-glass hermetic construction enables operation from −55 °C to +175 °C and supports radiation-hardened applications per MicroNote 050.
It is rated for 150 W peak pulse power (10/1000 µs), exhibits 0.105 %/°C breakdown voltage temperature coefficient, and provides ESD immunity per MIL-STD-750 Method 1020. The device's 300 A maximum surge current and 137 V clamping voltage ensure robust secondary lightning protection in telecom and avionics interfaces.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Pulse Power | 150 W at 10/1000 µs - sustains high-energy transients without degradation in telecom/data line protection |
| Capacitance | 4 pF at 0 V - preserves signal integrity up to GHz frequencies in RF and high-speed serial interfaces |
| Working Standoff Voltage | 82 V - blocks normal operating voltages while triggering only during overvoltage events |
| Clamping Voltage | ≤137 V at 300 A - limits downstream voltage stress to safe levels during 10/1000 µs surges |
| Breakdown Voltage | 95.0 V min at 1 mA - defines precise conduction threshold for predictable protection activation |
| Junction Temperature Range | −55 °C to +175 °C - enables deployment in extreme environments including engine control and satellite systems |
| Leakage Current | ≤0.5 µA at 82 V - minimizes standby power loss and avoids false triggering in precision analog circuits |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Input terminal for protected signal line | Connects to line under protection; conducts during reverse-biased overvoltage events |
| Cathode | Reference/ground return path | Connected to system ground or reference rail; forms clamping path with anode during surge |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic seal | Eliminates internal moisture and gas migration, ensuring >20-year field life in sealed avionics enclosures |
| Category 1 metallurgical bond | Meets MIL-PRF-19500/507 requirements for high-reliability semiconductor interconnects |
| Triple-layer passivation | Prevents surface leakage and corrosion in humid, salt-laden, or contaminated environments |
| Low capacitance architecture | Series rectifier + TVS topology achieves 4 pF-lowest among 150 W-rated TVS devices |
| Radiation hardness | Inherently tolerant to total ionizing dose (TID) per Microsemi MicroNote 050, suitable for LEO missions |
Applications
| Avionics Data Bus Protection | RF Transceiver Front-End |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B data lines from induced lightning transients and ESD. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed inline between bus driver and connector. Use Value: 4 pF capacitance prevents signal rise-time degradation; 137 V clamping ensures receiver ICs remain below absolute maximum ratings. | Use Scenario: Shielding LNA input stages in S-band radar receivers from antenna-coupled ESD and switching noise. IC Role / Device Role / Timing Role: Low-capacitance transient suppressor mounted directly at RF connector interface. Use Value: Sub-5 pF capacitance maintains impedance match and insertion loss <0.2 dB up to 3 GHz. |
| Industrial Ethernet PHY Interface | Satellite Command & Telemetry Link |
Use Scenario: Guarding 100BASE-TX transformer-coupled PHY lines against EFT bursts and cable discharge events. IC Role / Device Role / Timing Role: Through-hole TVS on PCB edge near RJ45 magnetics. Use Value: 150 W rating handles IEC61000-4-4 EFT (5 kHz burst) without parametric shift; RoHS-compliant plating meets IPC-J-STD-006. | Use Scenario: Securing command reception circuitry in CubeSat telemetry receivers exposed to space-weather-induced surges. IC Role / Device Role / Timing Role: Radiation-tolerant TVS on RS-422 differential pair inputs. Use Value: Hermetic glass package and Category 1 bond ensure zero latent failures after 100 krad(Si) TID exposure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ82A | Surface-mount DO-214AB package; 6.5 pF capacitance; 1500 W rating but higher clamping (133 V @ 12.3 A) | Designed for automated assembly; unsuitable for high-frequency >500 MHz due to higher parasitic capacitance | Select when board space is constrained and manual through-hole assembly is unavailable |
| 1N6330 | Axial-leaded, same glass package; 100 W rating; 5.5 pF capacitance; lower VWM (70 V) | Limited to lower-energy transients; not qualified to Category 1 or radiation-hardened standards | Select for cost-sensitive industrial controls where full aerospace reliability is unnecessary |
Compared with SMCJ82A and 1N6330, the 1N8175US/TR uniquely combines hermetic reliability, 4 pF capacitance, and Category 1 bonding-making it irreplaceable in flight-critical RF and data interfaces where long-term parametric stability under thermal cycling and radiation is mandatory.
Availability
1N8175US/TR is available at Aetrix Electronics and suitable for avionics data buses, RF transceiver front-ends, and satellite telemetry links requiring stable component supply across extended product lifecycles.
Supply support for 1N8175US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and aerospace-grade components.
The 1N8175US/TR belongs to Microsemi's legacy LDS (Low-Distortion Suppressor) TVS family, engineered specifically for mission-critical signal integrity preservation in defense, space, and high-frequency communications systems.
FAQ
What is the clamping voltage of the 1N8175US/TR at its rated surge current?
The 1N8175US/TR has a maximum clamping voltage of 137 V at 300 A peak impulse current (10/1000 µs waveform). This value is guaranteed per the manufacturer's Electrical Characteristics table and defines the upper voltage limit imposed on protected circuitry during worst-case transient events. The 1N8175US/TR maintains this clamping performance across its full operating temperature range of −55 °C to +175 °C.
Is the 1N8175US/TR RoHS compliant?
Yes, the "e3" suffix in the full part number 1N8175US/TR indicates RoHS compliance per EU Directive 2011/65/EU. The device uses matte tin plating over copper leads and contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits. Full compliance documentation is available upon request from Aetrix Electronics for traceable sourcing.
Does the 1N8175US/TR support bidirectional transient suppression?
No, the 1N8175US/TR is strictly unidirectional. Bidirectional protection requires two 1N8175US/TR devices mounted in anti-parallel configuration, as documented in Figure 5 of the datasheet. This arrangement doubles the effective capacitance to 8 pF but retains the low-clamping, high-reliability benefits of the base device.
What is the thermal resistance of the 1N8175US/TR, and how does it affect power dissipation?
The 1N8175US/TR has a junction-to-ambient thermal resistance (RθJA) of 150 °C/W. This value applies to standard PCB mounting with controlled thermal paths; exceeding 1.0 W average power at 25 °C ambient will cause junction temperature to exceed 175 °C. For continuous operation, derating per Figure 3 is required-e.g., at 70 °C ambient, maximum steady-state power drops to ~0.7 W.
Can the 1N8175US/TR be used in place of the 1N8174 or 1N8176?
No-1N8175US/TR is a discrete voltage grade within the 1N8149–1N8182 family, with specific VWM = 82 V and V(BR) = 95.0 V min. Substituting 1N8174 (VWM = 75 V) or 1N8176 (VWM = 94 V) alters the protection threshold and may cause premature conduction or insufficient clamping. Each variant must be selected per circuit standoff voltage requirements; the 1N8175US/TR is not interchangeable without design validation.
1N8175US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 82V
- Voltage - Breakdown (Min):
- 95V
- Voltage - Clamping (Max) @ Ipp:
- 137V
- Current - Peak Pulse (10/1000µs):
- 1.09A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8175US/TR FAQ
1.How can I place an order for 1N8175US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8175US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8175US/TR reliable?
The price and inventory of 1N8175US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8175US/TR is usually 5 days.
3.What payment methods are accepted for 1N8175US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8175US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8175US/TR?
1N8175US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8175US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8175US/TR?
For technical support, including 1N8175US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8175US/TR requirements.
6.How does Aetrix verify that 1N8175US/TR is sourced from the original manufacturer or authorized distributors?
All 1N8175US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8175US/TR meets industry standards.
7.What is the process for return or replacement of 1N8175US/TR?
All 1N8175US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8175US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8175US/TR part is unused and in its original packaging.
Return procedure for 1N8175US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8175US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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