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Microchip Technology 1N8176USE3/TR
- Part No.:
- 1N8176USE3/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8176USE3/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:6,353
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Product details
Overview
1N8176USE3/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 4 pF capacitance, and a 94 V working standoff voltage (VWM), with clamping voltage of 152 V at 300 A surge current - ideal for ESD/EFT protection in aerospace and military communication interfaces.
For engineers reviewing the 1N8176USE3/TR datasheet, 1N8176USE3/TR pinout, 1N8176USE3/TR application, or 1N8176USE3/TR equivalent, key selection criteria include low-capacitance transient suppression, Category 1 metallurgical bond reliability, hermetic glass packaging, RoHS-compliant e3 marking, and axial-leaded through-hole mounting compatibility.
Technical Context
This TVS integrates a unique series-opposed rectifier diode to achieve ultra-low 4 pF capacitance while maintaining unidirectional operation. Its hard-glass hermetic construction uses internal tungsten slugs and Category 1 metallurgical bonds, enabling operation from –55 °C to +175 °C junction temperature.
The device meets IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select IEC61000-4-5 (lightning) immunity standards. It exhibits 0.107 %/°C breakdown voltage temperature coefficient and 150 °C/W thermal resistance from junction to ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 94 V - maximum continuous reverse standoff voltage before conduction begins; sets operating margin for protected signal lines. |
| V(BR) min | 104 V - minimum breakdown voltage at 1 mA; ensures predictable clamping onset above normal operating voltage. |
| VC @ IPP | 152 V at 300 A - clamping voltage during 10/1000 µs surge; defines worst-case voltage seen by downstream circuitry. |
| CT | 4 pF - total capacitance at 0 V; enables use on >1 GHz RF/data lines without signal integrity degradation. |
| PPP | 150 W - peak pulse power rating; supports robust protection against fast transients in MIL-STD-1275/DO-160 environments. |
| TJ Range | –55 °C to +175 °C - extended junction temperature range; suitable for engine bay, avionics, and space-grade thermal cycling. |
| RθJA | 150 °C/W - thermal resistance; requires minimal PCB copper area for steady-state power dissipation up to 1.0 W. |
Pinout & Package
Package: Axial-leaded, voidless-hermetically-sealed hard glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal under forward bias; connected to protected line in unidirectional configuration. | Accepts surge current during reverse transient; must be tied to signal line requiring protection. |
| Cathode | Negative terminal; marked with band; conducts during transient clamp event. | Sinks surge current to ground reference; layout must minimize inductance to preserve clamping performance. |
Key Features
| Feature | Design Value |
|---|---|
| Low capacitance architecture | 4 pF achieved via integrated anti-series rectifier diode - preserves signal integrity on high-speed data lines (e.g., RS-485, CAN FD, MIL-STD-1553). |
| Category 1 metallurgical bond | Internal bond structure qualified per MIL-PRF-19500 - ensures zero failure-in-time (FIT) in mission-critical systems. |
| Hermetic glass sealing | Voidless seal eliminates moisture ingress and parameter drift - critical for 20+ year field life in satellite and naval systems. |
| IEC61000-4-2/4-4 compliance | Validated for ±15 kV contact / ±20 kV air discharge ESD and 4 kV EFT bursts - reduces need for external filtering stages. |
Applications
| Aerospace Data Bus Protection | Military Radio Front-End |
|---|---|
Use Scenario: Protecting MIL-STD-1553B bus lines from lightning-induced surges and ESD events in airborne avionics cabinets. IC Role / Device Role / Timing Role: Unidirectional TVS placed between bus transceiver and connector interface to clamp transients before they reach IC inputs. Use Value: 4 pF capacitance avoids signal rise-time degradation; 152 V clamping ensures receiver input stays below absolute maximum ratings during 300 A surges. | Use Scenario: Shielding HF/VHF radio antenna feedlines and audio I/O ports from electrostatic discharge in handheld tactical radios. IC Role / Device Role / Timing Role: Standoff protection element mounted directly at chassis entry point to shunt ESD energy to ground before reaching sensitive LNA stages. Use Value: Hermetic glass package withstands humidity and salt fog exposure; 175 °C max junction temperature supports operation near RF power amplifiers. |
| Naval Communication Systems | Satellite Telemetry Interfaces |
Use Scenario: Safeguarding RS-422/RS-485 serial links connecting shipboard control units across electrically noisy engine rooms. IC Role / Device Role / Timing Role: Low-capacitance TVS installed on differential pair traces to maintain common-mode rejection while suppressing common-mode transients. Use Value: 94 V VWM matches typical 72–110 V DC shipboard power rails; 150 W PPP handles repetitive switching noise from motor drives. | Use Scenario: Protecting S-band telemetry downlink receivers from launch-pad ESD and in-orbit single-event transients. IC Role / Device Role / Timing Role: Radiation-hardened TVS used in front-end filtering network to prevent latch-up in GaAs MMIC receivers. Use Value: Inherent radiation hardness per MicroNote 050; Category 1 bond ensures survivability under 100 krad(Si) TID exposure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N8176US | Same electrical specs but non-RoHS (tin/lead plating); no e3 suffix; identical glass package and axial leads. | Approved for legacy military programs requiring Pb-based solder compatibility; not suitable for new RoHS-compliant designs. | Select 1N8176US only when leaded assembly process is mandated and environmental compliance is secondary. |
| SMCJ94A | Surface-mount SMC package; 94 V VWM; 150 W PPP; 100 pF capacitance - 25× higher than 1N8176USE3/TR. | Used where board space is constrained and high-frequency performance is not required (e.g., DC power rail protection). | Choose SMCJ94A for cost-sensitive industrial power supplies; avoid for RF/data lines due to excessive capacitance. |
Compared with 1N8176USE3/TR, 1N8176US offers identical protection performance but lacks RoHS compliance, while SMCJ94A trades ultra-low capacitance for compact footprint - making the 1N8176USE3/TR uniquely suited for high-speed, high-reliability signal path protection.
Availability
1N8176USE3/TR is available at Aetrix Electronics and suitable for aerospace data buses, military radio front-ends, and naval communication systems requiring stable component supply across extended product lifecycles.
Supply support for 1N8176USE3/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for defense, aerospace, and industrial markets.
The 1N8176USE3/TR belongs to Microsemi's legacy "LDS" series of hermetic TVS diodes, engineered specifically for mission-critical transient suppression where failure is not an option - emphasizing radiation hardness, long-term parameter stability, and extreme environmental resilience.
FAQ
What is the clamping voltage of the 1N8176USE3/TR at its rated surge current?
The 1N8176USE3/TR has a maximum clamping voltage (VC) of 152 V at 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is measured at 25 °C and defines the upper voltage limit imposed on protected circuitry during a full-rated transient event. The 1N8176USE3/TR maintains this clamping performance across its full operating temperature range due to its stable breakdown characteristics and hermetic construction.
Is the 1N8176USE3/TR suitable for bidirectional transient protection?
No - the 1N8176USE3/TR is a unidirectional TVS diode. For bidirectional protection, two 1N8176USE3/TR devices must be connected in anti-parallel configuration, as documented in Figure 5 of the Microsemi datasheet. This arrangement doubles the effective capacitance to 8 pF but provides symmetrical clamping for both polarities. The 1N8176USE3/TR itself conducts only in reverse bias and blocks forward current above its 94 V VWM.
What does the "e3" suffix in 1N8176USE3/TR signify?
"e3" indicates RoHS-compliant matte tin plating on the axial leads of the 1N8176USE3/TR, per JEDEC Standard J-STD-609. This replaces traditional tin/lead plating and ensures compliance with EU Directive 2011/65/EU. The "TR" suffix denotes tape-and-reel packaging per EIA-296, facilitating automated placement. The 1N8176USE3/TR retains all electrical and thermal specifications of the base 1N8176US part while meeting modern environmental requirements.
How does the 4 pF capacitance of the 1N8176USE3/TR compare to standard TVS diodes?
The 4 pF capacitance of the 1N8176USE3/TR is among the lowest available for a 150 W TVS, achieved via its patented series-opposed rectifier architecture. Typical surface-mount TVS diodes like SMAJ90A exhibit 100–200 pF, which degrades signal integrity above ~100 MHz. The 1N8176USE3/TR's 4 pF enables use on RF, high-speed serial, and precision analog lines where even small parasitic capacitance causes jitter, attenuation, or impedance mismatch.
Does the 1N8176USE3/TR require derating at elevated ambient temperatures?
Yes - the 1N8176USE3/TR must be derated linearly above 25 °C ambient per its published derating curve (Figure 3). At 100 °C ambient, its peak pulse power drops to approximately 75 W, and at 150 °C, it falls to ~30 W. This reflects its 150 °C/W junction-to-ambient thermal resistance. Designers must ensure adequate PCB copper area and airflow to maintain junction temperature ≤175 °C during repeated surge events, especially in enclosed military or aerospace enclosures.
1N8176USE3/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 94V
- Voltage - Breakdown (Min):
- 104V
- Voltage - Clamping (Max) @ Ipp:
- 152V
- Current - Peak Pulse (10/1000µs):
- 980mA
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8176USE3/TR FAQ
1.How can I place an order for 1N8176USE3/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8176USE3/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8176USE3/TR reliable?
The price and inventory of 1N8176USE3/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8176USE3/TR is usually 5 days.
3.What payment methods are accepted for 1N8176USE3/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8176USE3/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8176USE3/TR?
1N8176USE3/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8176USE3/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8176USE3/TR?
For technical support, including 1N8176USE3/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8176USE3/TR requirements.
6.How does Aetrix verify that 1N8176USE3/TR is sourced from the original manufacturer or authorized distributors?
All 1N8176USE3/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8176USE3/TR meets industry standards.
7.What is the process for return or replacement of 1N8176USE3/TR?
All 1N8176USE3/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8176USE3/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8176USE3/TR part is unused and in its original packaging.
Return procedure for 1N8176USE3/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8176USE3/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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