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Microchip Technology 1N8176US/TR
- Part No.:
- 1N8176US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8176US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:8,447
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Product details
Overview
1N8176US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 4 pF capacitance, 94 V working standoff voltage (VWM), and 150 W peak pulse power at 10/1000 µs. It features internal Category 1 metallurgical bonds and low-leakage operation for high-reliability ESD/EFT protection in aerospace and telecom front-end circuits.
For engineers reviewing the 1N8176US/TR datasheet, 1N8176US/TR pinout, 1N8176US/TR application, or 1N8176US/TR equivalent, this device delivers verified low-capacitance transient suppression with precise clamping (VC = 137 V @ IPP = 300 A), RoHS-compliant axial-leaded packaging, and radiation-hardened construction per MicroNote 050.
Technical Context
This TVS uses a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF capacitance while maintaining unidirectional behavior. Its hard-glass hermetic seal and tungsten slug construction enable stable operation from –55 °C to +175 °C junction temperature.
The device meets IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select IEC61000-4-5 (lightning) immunity standards. Clamping occurs at 137 V under 300 A peak impulse current, with <0.5 µA standby leakage at 94 V standoff.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 94 V - Maximum continuous reverse voltage before conduction begins; sets operating margin for protected signal lines. |
| VC @ IPP | 137 V @ 300 A - Clamping voltage during 10/1000 µs surge; defines worst-case voltage seen by downstream ICs. |
| CT | 4 pF - Total capacitance at 0 V; enables use in >1 GHz RF interfaces without signal degradation. |
| PPP | 150 W - Peak pulse power rating; supports robust protection against repetitive transients in industrial comms. |
| TJ Range | –55 °C to +175 °C - Extended thermal range suitable for avionics and downhole electronics. |
| ID @ VWM | 0.5 µA - Ultra-low leakage ensures minimal loading on high-impedance sensor or reference circuits. |
| RθJA | 150 °C/W - Thermal resistance from junction to ambient; informs PCB copper area requirements for power dissipation. |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink terminal during forward conduction | Connected to protected line; conducts surge energy to ground when VAK exceeds VBR. |
| Cathode | Reference terminal with polarity band marking | Connected to system ground; establishes unidirectional clamping direction and defines VWM polarity. |
Key Features
| Feature | Design Value |
|---|---|
| Category 1 metallurgical bond | Internal bond structure qualified for high-reliability applications including space-grade systems per MIL-PRF-19500. |
| Triple-layer passivation | Enhanced surface stability against humidity, contamination, and long-term bias stress in harsh environments. |
| Voidless hermetic seal | Eliminates internal moisture ingress and pressure differentials that cause parametric drift or early failure. |
| Radiation hardness | Inherent tolerance to total ionizing dose (TID) per Microsemi MicroNote 050; validated for low-earth orbit use. |
| Nonsensitive to ESD | Qualified per MIL-STD-750 Method 1020; no handling precautions required during assembly. |
Applications
| Telecom Line Interface Protection | Aerospace Data Bus Protection |
|---|---|
Use Scenario: Protecting RS-485/RS-422 transceivers on satellite telemetry links exposed to ESD and lightning-induced surges. IC Role / Device Role / Timing Role: Unidirectional TVS placed between differential pair and ground to clamp common-mode transients without distorting signal integrity. Use Value: 4 pF capacitance prevents baud-rate degradation above 10 Mbps; 137 V clamping limits bus voltage excursion within transceiver absolute maximum ratings. | Use Scenario: Safeguarding ARINC 429 receivers in flight control computers subjected to induced transients from actuator switching. IC Role / Device Role / Timing Role: Standoff-rated TVS on input pins to absorb coupled energy while maintaining <0.5 µA leakage for accurate voltage threshold detection. Use Value: –55 °C to +175 °C operation supports extended thermal cycling; Category 1 bond ensures mission-critical reliability over 15-year service life. |
| Medical Imaging Signal Chain Protection | Industrial Ethernet PHY Protection |
Use Scenario: Shielding analog front-end amplifiers in MRI gradient coil monitoring circuits from fast-rising switching noise. IC Role / Device Role / Timing Role: Low-capacitance TVS on high-impedance sensor nodes to suppress sub-10 ns transients without loading sensitive gain stages. Use Value: 4 pF capacitance avoids resonance with PCB trace inductance; 94 V VWM matches ±48 V supply rails in diagnostic subsystems. | Use Scenario: Securing 100BASE-TX PHY inputs in factory automation gateways exposed to motor drive noise and relay bounce. IC Role / Device Role / Timing Role: Primary-level TVS on MDI lines to meet IEC61000-4-5 Level 3 (2 kV) while preserving signal fidelity up to 125 MHz. Use Value: 150 W PPP rating handles repeated 10/1000 µs surges; RoHS-compliant plating ensures compatibility with lead-free reflow profiles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ90A | Surface-mount SMB package; 90 V VWM; 600 W PPP; 100 pF capacitance. | Higher capacitance limits use to <100 MHz signals; better suited for board-level bulk protection vs. point-of-entry RF line protection. | Select when PCB space is constrained and RF performance is not critical; requires layout revision due to SMT footprint. |
| 1N6324 | Axial-leaded DO-41; 91 V VWM; 150 W PPP; 100 pF capacitance; non-hermetic epoxy package. | Lacks radiation hardness, Category 1 bonding, and hermetic seal; unsuitable for aerospace or high-reliability mil/aero deployments. | Acceptable for commercial industrial use where cost is prioritized over long-term reliability and environmental resilience. |
Compared with SMBJ90A and 1N6324, the 1N8176US/TR uniquely combines ultra-low 4 pF capacitance, hermetic sealing, and radiation tolerance-making it irreplaceable for RF-sensitive, mission-critical systems where signal integrity and lifetime reliability are non-negotiable.
Availability
1N8176US/TR is available at Aetrix Electronics and suitable for aerospace telemetry interfaces, telecom line drivers, and medical imaging front-ends requiring stable component supply across extended product lifecycles.
Supply support for 1N8176US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The 1N8176US/TR belongs to Microsemi's legacy high-reliability TVS family engineered specifically for ESD/EFT protection in radiation-exposed, high-frequency, and long-lifecycle systems.
FAQ
What is the clamping voltage of the 1N8176US/TR under standard surge conditions?
The 1N8176US/TR clamps at 137 V when subjected to a 300 A peak impulse current with a 10/1000 µs waveform. This value is measured at 25 °C and defines the maximum voltage transferred to protected circuitry during transient events. The 1N8176US/TR maintains this clamping performance across its full operating temperature range due to its hard-glass hermetic construction and stable junction design.
Is the 1N8176US/TR suitable for high-frequency RF applications?
Yes, the 1N8176US/TR is explicitly designed for high-frequency applications, with a verified 4 pF total capacitance at 0 V. This ultra-low capacitance minimizes signal distortion and insertion loss in RF paths up to several GHz, making it appropriate for protecting antenna feeds, RF transceivers, and high-speed data lines where traditional TVS devices would degrade bandwidth.
Does the 1N8176US/TR meet international ESD and surge immunity standards?
Yes, the 1N8176US/TR is certified for ESD protection per IEC61000-4-2 (±15 kV air, ±8 kV contact), EFT protection per IEC61000-4-4 (40 A, 5/50 ns), and secondary lightning protection per select levels of IEC61000-4-5. These qualifications are documented in Microsemi's T4-LDS-xxxx datasheet and supported by internal test reports referenced in MicroNote 050.
What is the maximum operating temperature for the 1N8176US/TR?
The 1N8176US/TR has a junction and storage temperature range of –55 °C to +175 °C. This extended thermal capability allows deployment in extreme environments such as avionics bays, downhole oilfield tools, and engine-mounted industrial controllers where conventional TVS diodes would fail prematurely.
How does the hermetic seal of the 1N8176US/TR improve long-term reliability?
The voidless hermetic glass seal in the 1N8176US/TR eliminates internal moisture and gas migration, preventing parametric drift, corrosion, and early-life failures caused by thermal cycling or humidity exposure. Combined with Category 1 metallurgical bonds, this construction ensures stable electrical performance over 15+ years in mission-critical systems-unlike epoxy-packaged alternatives that degrade under sustained bias stress.
1N8176US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 94V
- Voltage - Breakdown (Min):
- 104V
- Voltage - Clamping (Max) @ Ipp:
- 152V
- Current - Peak Pulse (10/1000µs):
- 980mA
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8176US/TR FAQ
1.How can I place an order for 1N8176US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8176US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8176US/TR reliable?
The price and inventory of 1N8176US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8176US/TR is usually 5 days.
3.What payment methods are accepted for 1N8176US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8176US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8176US/TR?
1N8176US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8176US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8176US/TR?
For technical support, including 1N8176US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8176US/TR requirements.
6.How does Aetrix verify that 1N8176US/TR is sourced from the original manufacturer or authorized distributors?
All 1N8176US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8176US/TR meets industry standards.
7.What is the process for return or replacement of 1N8176US/TR?
All 1N8176US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8176US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8176US/TR part is unused and in its original packaging.
Return procedure for 1N8176US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8176US/TR Tags
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