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Microchip Technology 1N8177USE3/TR
- Part No.:
- 1N8177USE3/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8177USE3/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:8,301
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Product details
Overview
1N8177USE3/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) diode designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 4 pF capacitance, and a 100 V working standoff voltage (VWM), with clamping voltage of 168 V at 1.95 A peak surge current - ideal for ESD/EFT protection in aerospace data links.
For engineers reviewing the 1N8177USE3/TR datasheet, 1N8177USE3/TR pinout, 1N8177USE3/TR application, or 1N8177USE3/TR equivalent, key selection criteria include low-capacitance transient suppression, Category 1 metallurgical bond reliability, hermetic glass packaging, and compliance with IEC61000-4-2/4-4/4-5 standards for mission-critical interfaces.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF capacitance while maintaining unidirectional operation. Its hard-glass hermetic construction with tungsten slugs enables stable performance across −55 °C to +175 °C junction temperature range and supports radiation-hardened applications per MicroNote 050.
The device operates with 0.5 µA maximum standby current at 100 V VWM and achieves clamping at 168 V under 1.95 A IPP (10/1000 µs), delivering robust secondary lightning protection per select IEC61000-4-5 levels without compromising signal integrity in RF or high-baud-rate lines.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 100 V - Maximum continuous reverse standoff voltage before conduction begins; sets operating margin for protected line. |
| VC @ IPP | 168 V at 1.95 A - Clamping voltage during 10/1000 µs surge; defines worst-case overvoltage seen by downstream circuitry. |
| CT | 4 pF - Total small-signal capacitance; enables use on >1 GHz RF paths and high-speed serial interfaces without signal distortion. |
| PPP | 150 W - Peak pulse power rating at 25 °C; ensures survivability against repetitive transients in industrial control backplanes. |
| TJ Range | −55 °C to +175 °C - Junction temperature range; supports deployment in avionics, downhole tools, and engine-control modules. |
| RθJA | 150 °C/W - Thermal resistance junction-to-ambient; informs PCB copper area requirements for sustained power dissipation. |
| αV(BR) | 0.107 %/°C - Temperature coefficient of breakdown voltage; enables predictable V(BR) drift over temperature in precision timing circuits. |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during reverse surge | Connected to protected line; conducts only when voltage exceeds VWM, diverting energy to ground. |
| Cathode | Reference terminal / ground return | Marked with band; ties to system ground or low-impedance return plane to complete clamping path. |
Key Features
| Feature | Design Value |
|---|---|
| Category 1 metallurgical bond | Internal high-reliability bond structure qualified for MIL-PRF-19500/530 and space-grade applications. |
| Triple-layer passivation | Enhanced surface stability against humidity, contamination, and long-term bias stress in harsh environments. |
| Voidless hermetic seal | Eliminates internal moisture ingress and delamination risk over 20+ year field life in sealed enclosures. |
| Nonsensitive to ESD | Qualified per MIL-STD-750 Method 1020 - no handling precautions required during assembly or test. |
| IEC61000-4-5 compliance | Validated for secondary lightning protection up to Level 3 (1 kV line-to-ground, 2 kV line-to-line). |
Applications
| Aerospace Data Bus Protection | Medical Imaging Signal Chain |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B differential receivers from induced transients in aircraft avionics bays. IC Role / Device Role / Timing Role: Unidirectional TVS placed at connector entry point to clamp fast-rising ESD and lightning-induced surges before signal conditioning ICs. Use Value: 4 pF capacitance prevents rise-time degradation of 1 MHz Manchester-encoded signals; 168 V clamping limits receiver input excursion below absolute max rating. | Use Scenario: Shielding analog front-end amplifiers in MRI gradient coil monitoring systems from switching noise and cable discharge events. IC Role / Device Role / Timing Role: Standoff-protection element on low-noise amplifier inputs, operating continuously at 100 V DC bias with <0.5 µA leakage. Use Value: Hermetic glass package ensures zero parametric shift after 10,000 thermal cycles; Category 1 bond guarantees no latent failure in Class III medical devices. |
| Downhole Telemetry Interface | Industrial Ethernet PHY Protection |
Use Scenario: Safeguarding RS-485 transceivers in oil/gas wellhead controllers exposed to 175 °C ambient and lightning coupling via long sensor cables. IC Role / Device Role / Timing Role: Primary transient shunt on twisted-pair data lines, mounted directly at connector with minimal trace length. Use Value: −55 °C to +175 °C operation eliminates derating; 150 W PPP withstands multiple 10/1000 µs surges without parameter drift. | Use Scenario: Protecting 100BASE-TX PHY pins in factory automation switches subjected to EFT bursts per IEC61000-4-4. IC Role / Device Role / Timing Role: Low-capacitance TVS on differential pairs to preserve signal integrity while meeting EN 61000-4-2 Level 4 (15 kV air, 8 kV contact). Use Value: 4 pF capacitance avoids jitter accumulation in 125 MHz symbol rate; RoHS-compliant e3 marking satisfies EU supply chain requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ100A | Surface-mount SMC package; 6.5 pF capacitance; 170 V clamping at 1.7 A IPP. | Higher capacitance limits use in >500 MHz applications; not rated for >150 °C operation. | Select when board space is constrained and junction temperature remains <125 °C. |
| 1N6377 | Axial-leaded but non-hermetic epoxy package; 10 pF capacitance; 160 V clamping at 1.875 A IPP. | Lacks Category 1 bond and radiation hardness; unsuitable for aerospace or downhole use. | Select for cost-sensitive commercial industrial designs where hermeticity is not mandated. |
Compared with SMCJ100A and 1N6377, the 1N8177USE3/TR uniquely combines 4 pF capacitance, hermetic reliability, and full −55 °C to +175 °C operation - making it the only option for high-frequency, high-temperature, mission-critical transient suppression where long-term parametric stability is non-negotiable.
Availability
1N8177USE3/TR is available at Aetrix Electronics and suitable for aerospace data bus protection, downhole telemetry interfaces, and industrial Ethernet PHY protection requiring stable component supply across extended temperature ranges and multi-decade service life.
Supply support for 1N8177USE3/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and high-voltage analog/mixed-signal components for defense, aerospace, and industrial markets.
The 1N8177USE3/TR belongs to Microsemi's legacy "LDS" series of hermetic TVS diodes, engineered specifically for fail-safe transient protection in systems where field failure is unacceptable - including flight-critical avionics, nuclear instrumentation, and deep-earth exploration equipment.
FAQ
What is the clamping voltage of the 1N8177USE3/TR under standard 10/1000 µs surge conditions?
The 1N8177USE3/TR has a maximum clamping voltage (VC) of 168 V when subjected to its rated peak impulse current (IPP) of 1.95 A using the 10/1000 µs waveform. This value is measured at 25 °C and defines the upper voltage limit imposed on protected circuitry during transient events. The 1N8177USE3/TR maintains this clamping performance across its full operating temperature range due to its stable silicon design and hermetic construction.
Does the 1N8177USE3/TR meet IEC61000-4-2 and IEC61000-4-4 immunity standards?
Yes, the 1N8177USE3/TR provides ESD protection compliant with IEC61000-4-2 and EFT protection compliant with IEC61000-4-4. Its low 4 pF capacitance and fast response enable effective suppression of 8 kV contact and 15 kV air-gap discharges without distorting high-speed signals. The 1N8177USE3/TR is validated for these standards in typical application configurations with proper PCB layout and grounding - no external components required for basic compliance.
Is the 1N8177USE3/TR suitable for operation above 125 °C ambient temperature?
Yes, the 1N8177USE3/TR supports continuous operation from −55 °C to +175 °C junction temperature, making it suitable for ambient environments exceeding 125 °C when properly heatsinked. Its hard-glass hermetic package and tungsten slug construction prevent thermal degradation or parameter shift at elevated temperatures. For 1N8177USE3/TR deployments in downhole or engine bay applications, thermal modeling must ensure TJ does not exceed 175 °C under worst-case power dissipation.
What does the "USE3/TR" suffix indicate in the 1N8177USE3/TR part number?
The "USE3/TR" suffix in 1N8177USE3/TR denotes two key attributes: "U" indicates axial-leaded, hermetically sealed glass package; "S" signifies surface-mount compatible lead finish (matte tin); "e3" certifies RoHS compliance per JEDEC J-STD-609; and "TR" specifies tape-and-reel packaging per EIA-296. This full designation confirms the 1N8177USE3/TR meets environmental, mechanical, and logistics requirements for automated SMT assembly in regulated industries.
How does the 1N8177USE3/TR achieve its 4 pF capacitance compared to standard TVS diodes?
The 1N8177USE3/TR achieves 4 pF capacitance through a proprietary internal architecture that integrates a rectifier diode in series and opposite polarity to the main TVS junction - effectively canceling parasitic capacitance while preserving unidirectional clamping behavior. This dual-diode topology is unique to Microsemi's LDS series and is physically realized within the same hermetic glass envelope. Unlike standard TVS diodes, the 1N8177USE3/TR does not rely on geometry reduction alone, enabling both ultra-low capacitance and high surge robustness.
1N8177USE3/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 100V
- Voltage - Breakdown (Min):
- 114V
- Voltage - Clamping (Max) @ Ipp:
- 168V
- Current - Peak Pulse (10/1000µs):
- 890mA
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8177USE3/TR FAQ
1.How can I place an order for 1N8177USE3/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8177USE3/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8177USE3/TR reliable?
The price and inventory of 1N8177USE3/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8177USE3/TR is usually 5 days.
3.What payment methods are accepted for 1N8177USE3/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8177USE3/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8177USE3/TR?
1N8177USE3/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8177USE3/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8177USE3/TR?
For technical support, including 1N8177USE3/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8177USE3/TR requirements.
6.How does Aetrix verify that 1N8177USE3/TR is sourced from the original manufacturer or authorized distributors?
All 1N8177USE3/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8177USE3/TR meets industry standards.
7.What is the process for return or replacement of 1N8177USE3/TR?
All 1N8177USE3/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8177USE3/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8177USE3/TR part is unused and in its original packaging.
Return procedure for 1N8177USE3/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8177USE3/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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