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Microchip Technology 1N8177US/TR
- Part No.:
- 1N8177US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8177US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:3,190
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Product details
Overview
1N8177US/TR from Microsemi is a unidirectional transient voltage suppressor (TVS) diode designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, features 4 pF capacitance, 100 V working standoff voltage (VWM), and clamps transients to ≤168 V at 300 A IPP - ideal for ESD-sensitive RF front-ends and aerospace data links.
For engineers reviewing the 1N8177US/TR datasheet, 1N8177US/TR pinout, 1N8177US/TR application, or 1N8177US/TR equivalent, key selection criteria include low-capacitance transient suppression, hermetic glass package robustness, Category 1 metallurgical bonding, IEC61000-4-2/4-4 compliance, and axial-leaded through-hole mounting compatibility.
Technical Context
This device uses a unique series-connected rectifier diode opposing the TVS junction to achieve ultra-low 4 pF capacitance while maintaining unidirectional clamping behavior. Its voidless hermetically sealed hard-glass construction with tungsten slugs ensures stable performance across -55 °C to +175 °C junction temperature range.
The 1N8177US/TR exhibits 0.098 %/°C breakdown voltage temperature coefficient and 0.5 µA maximum standby current at 100 V VWM. It achieves 168 V clamping voltage (VC) at 300 A peak impulse current (IPP), with thermal resistance of 150 °C/W and steady-state power rating of 1.0 W at 25 °C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 100 V - Maximum continuous reverse standoff voltage before conduction; defines safe operating margin for protected signal lines. |
| V(BR) min | 114 V - Minimum breakdown voltage at 1 mA test current; ensures consistent turn-on threshold under surge conditions. |
| VC @ IPP | 168 V at 300 A - Clamping voltage during 10/1000 µs surge; determines maximum stress imposed on downstream circuitry. |
| CT | 4 pF - Total capacitance at 0 V; enables use in >1 GHz RF paths without signal integrity degradation. |
| PPP | 150 W - Peak pulse power rating at 25 °C; supports robust lightning-level surge immunity per IEC61000-4-5. |
| TJ Range | -55 °C to +175 °C - Junction temperature operating range; suitable for extended-temperature avionics and downhole electronics. |
| RθJA | 150 °C/W - Thermal resistance from junction to ambient; informs heatsinking requirements for sustained power dissipation. |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current entry point in forward direction | Connected to protected line; conducts only during reverse-biased clamping event. |
| Cathode | Transient current exit point during clamping | Connected to ground or reference rail; carries full surge current to sink. |
Key Features
| Feature | Design Value |
|---|---|
| Low capacitance architecture | 4 pF achieved via series rectifier diode opposing TVS junction - preserves signal integrity in RF and high-speed digital interfaces. |
| Category 1 metallurgical bond | Internal high-reliability bond structure qualified for mission-critical applications including aerospace and defense systems. |
| Hermetic glass sealing | Voidless seal prevents moisture ingress and long-term parameter drift - critical for >20-year field life requirements. |
| IEC61000-4-2/4-4 compliance | Validated ESD (±15 kV air, ±8 kV contact) and EFT (40 A, 5/50 ns) protection - meets industrial and telecom immunity standards. |
| Triple-layer passivation | Enhanced surface stability against contamination and humidity - improves reliability in harsh environmental deployments. |
Applications
| Avionics Data Bus Protection | RF Transceiver Front-End |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B differential data lines from induced lightning transients and ESD events in airborne electronics. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between signal line and chassis ground to limit voltage excursion without loading signal path. Use Value: 4 pF capacitance avoids signal rise-time degradation; 168 V clamping ensures receiver input stays within absolute maximum ratings. |
Use Scenario: Safeguarding LNA inputs and PA outputs in S-band radar transceivers exposed to antenna-coupled surges. IC Role / Device Role / Timing Role: Low-capacitance transient suppressor mounted directly at RF connector interface to shunt fast transients before reaching sensitive GaAs MMIC stages. Use Value: 100 V VWM aligns with typical RF bias rails; hermetic seal prevents parameter shift under thermal cycling and vibration. |
| Downhole Telemetry Systems | Industrial Ethernet PHY Interface |
Use Scenario: Shielding RS-485 and CAN FD communication lines in oil/gas wellhead controllers operating at 175 °C ambient. IC Role / Device Role / Timing Role: High-temperature-rated TVS suppressing switching noise and ground bounce in isolated serial buses. Use Value: +175 °C max junction temperature enables operation without derating; 150 W PPP handles motor drive coupling transients. |
Use Scenario: Securing 100BASE-TX Ethernet PHY differential pairs against ESD and surge in factory automation gateways. IC Role / Device Role / Timing Role: Unidirectional TVS on each line pair (TX+/TX−, RX+/RX−) referenced to local ground plane. Use Value: 0.5 µA ID at 100 V VWM minimizes DC loading; axial leads allow manual rework and high-power trace routing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ100A | Surface-mount SMB package; 6.5 pF capacitance; 100 V VWM; 170 V VC @ 30.2 A IPP | Limited to lower-energy surges (600 W vs. 150 W); unsuitable for >100 MHz signals due to higher capacitance | Select when board space is constrained and surge energy is below 100 mJ; not recommended for RF or high-reliability hermetic systems. |
| 1N8177US | Same die and electrical specs; differs only in packaging - bulk pack vs. tape-and-reel (TR) | No functional difference; identical thermal, electrical, and reliability performance | Choose 1N8177US/TR for automated SMT placement; select 1N8177US for hand-soldered prototyping or low-volume repair. |
Compared with SMBJ100A and 1N8177US, the 1N8177US/TR offers superior high-frequency performance (4 pF), hermetic reliability (Category 1 bond), and axial-leaded serviceability - making it the preferred choice for aerospace, downhole, and RF-critical designs where failure is not an option.
Availability
1N8177US/TR is available at Aetrix Electronics and suitable for avionics data bus protection, RF transceiver front-end safeguarding, and downhole telemetry systems requiring stable component supply and long-term obsolescence management.
Supply support for 1N8177US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, radiation-hardened devices, and precision timing solutions.
The 1N8177US/TR belongs to Microsemi's legacy "LDS" series of hermetic TVS diodes, engineered specifically for military, aerospace, and oilfield electronics where zero-failure tolerance, extreme temperature resilience, and long-term parametric stability are mandatory.
FAQ
What is the clamping voltage of the 1N8177US/TR at its rated surge current?
The 1N8177US/TR clamps to a maximum of 168 V when subjected to its rated 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is guaranteed across the full operating temperature range and reflects worst-case device behavior under surge conditions - critical for ensuring downstream components remain within their absolute maximum voltage ratings.
Is the 1N8177US/TR RoHS compliant?
Yes, the 1N8177US/TR is RoHS compliant, featuring matte tin plating over copper leads and meeting Directive 2011/65/EU requirements. The "e3" suffix in Microsemi's nomenclature confirms RoHS compliance, and the device contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits.
How does the 1N8177US/TR achieve its 4 pF capacitance?
The 1N8177US/TR achieves 4 pF total capacitance by integrating a unique rectifier diode in series and opposite polarity to the main TVS junction. This configuration cancels parasitic capacitance contributions while preserving unidirectional clamping functionality - a proprietary architecture documented in Microsemi's T4-LDS-xxxx datasheet and validated across the full 1N8149–1N8182 family.
Can the 1N8177US/TR be used for bidirectional protection?
No, the 1N8177US/TR is strictly unidirectional. For bidirectional low-capacitance protection, Microsemi specifies using two 1N8177US/TR devices in anti-parallel configuration (cathode-to-anode), which doubles capacitance to 8 pF but provides symmetrical clamping in both polarities - as shown in Figure 5 of the official datasheet.
What is the maximum junction temperature rating for the 1N8177US/TR?
The 1N8177US/TR has a maximum junction temperature rating of +175 °C and a minimum of -55 °C. This extended range is enabled by its voidless hermetic glass package and internal metallurgical bonds, allowing reliable operation in downhole tools, jet engine controllers, and other environments where conventional plastic-packaged TVS diodes would fail.
1N8177US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 100V
- Voltage - Breakdown (Min):
- 114V
- Voltage - Clamping (Max) @ Ipp:
- 168V
- Current - Peak Pulse (10/1000µs):
- 890mA
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8177US/TR FAQ
1.How can I place an order for 1N8177US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8177US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8177US/TR reliable?
The price and inventory of 1N8177US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8177US/TR is usually 5 days.
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1N8177US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8177US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8177US/TR?
For technical support, including 1N8177US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8177US/TR requirements.
6.How does Aetrix verify that 1N8177US/TR is sourced from the original manufacturer or authorized distributors?
All 1N8177US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8177US/TR meets industry standards.
7.What is the process for return or replacement of 1N8177US/TR?
All 1N8177US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8177US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8177US/TR part is unused and in its original packaging.
Return procedure for 1N8177US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8177US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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