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Microchip Technology 1N8178USE3/TR
- Part No.:
- 1N8178USE3/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8178USE3/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:2,003
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Product details
Overview
1N8178USE3/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) diode designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 4 pF capacitance, and a 110 V working standoff voltage (VWM), with clamping voltage of 183 V at 300 A surge current. It is used in aerospace-grade data links and MIL-STD-750-compliant ESD-hardened interfaces.
For engineers reviewing the 1N8178USE3/TR datasheet, 1N8178USE3/TR pinout, 1N8178USE3/TR application, or 1N8178USE3/TR equivalent, key selection criteria include low-capacitance transient suppression for >100 Mbps serial lines, Category 1 metallurgical bonding for radiation-hardened environments, and RoHS-compliant axial-leaded packaging with cathode band polarity marking.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve ultra-low 4 pF capacitance while maintaining unidirectional operation. Its hard-glass hermetic seal and tungsten slug construction enable stable performance across –55 °C to +175 °C junction temperature range.
The device meets IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select IEC61000-4-5 (lightning) immunity requirements. It features triple-layer passivation and is inherently radiation-hard per Microsemi MicroNote 050, with no sensitivity to ESD per MIL-STD-750 Method 1020.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 110 V - Maximum continuous reverse-bias voltage before leakage exceeds 0.5 µA; defines safe operating window for protected signal lines. |
| VC @ IPP=300 A | 183 V - Clamping voltage during 10/1000 µs surge; limits downstream IC stress to ≤183 V under worst-case transients. |
| PPP | 150 W - Peak pulse power rating at 25 °C; supports robust protection against repetitive surges in mission-critical systems. |
| CT | 4 pF - Total capacitance at 0 V; enables use on high-speed lines up to 1 Gbps without signal integrity degradation. |
| TJ Range | –55 to +175 °C - Junction temperature range; validated for extended-life operation in avionics, downhole, and space-qualified electronics. |
| RθJA | 150 °C/W - Thermal resistance junction-to-ambient; requires minimal PCB copper area for thermal management in sealed enclosures. |
| V(BR) Min | 124 V - Minimum breakdown voltage at 1 mA; ensures reliable triggering above VWM with margin for temperature drift. |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard glass case with tungsten slugs; cathode indicated by painted band; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal during forward conduction | Connected to protected line side; blocks reverse current until VWM exceeded. |
| Cathode | Negative terminal; marked with band | Connected to ground or common reference; conducts avalanche current during transient events. |
Key Features
| Feature | Design Value |
|---|---|
| Category 1 metallurgical bond | Internal bond structure qualified for high-reliability applications per MIL-PRF-19500; eliminates interfacial delamination under thermal cycling. |
| Triple-layer passivation | Hermetic die surface protection against moisture, ionic contamination, and long-term parameter drift in humid or corrosive environments. |
| Lowest capacitance for 150 W TVS | 4 pF enables protection of RF front-ends, high-speed ADC inputs, and LVDS/RS-422 bus lines without bandwidth limiting. |
| Inherent radiation hardness | No parameter shift or failure observed under total ionizing dose (TID) up to 100 krad(Si); verified per MicroNote 050. |
Applications
| Avionics Data Bus Protection | MIL-STD-1553B Interface |
|---|---|
Use Scenario: Protecting bidirectional command/data lines in flight control computers against induced lightning transients and ESD. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between bus stub and transceiver, absorbing energy while preserving signal edge integrity. Use Value: 4 pF capacitance prevents rise-time degradation on 1 Mbps Manchester-encoded signals; 183 V clamping ensures receiver input stays within absolute maximum ratings. | Use Scenario: Safeguarding MIL-STD-1553B remote terminal transceivers from coupling-induced surges during ground handling or electromagnetic interference. IC Role / Device Role / Timing Role: Standoff-rated TVS mounted directly at connector entry point to shunt transients before reaching transformer-coupled interface. Use Value: 110 V VWM matches 1553B ±27 V differential swing plus safety margin; hermetic seal prevents outgassing in vacuum environments. |
| Downhole Telemetry Systems | Radiation-Hardened Sensor Interfaces |
Use Scenario: Transient suppression on RS-485 telemetry lines in oil/gas wellhead controllers exposed to switching surges and electrostatic discharge. IC Role / Device Role / Timing Role: Primary protection element on twisted-pair cable entry, paired with secondary filtering for multi-stage defense. Use Value: 150 W PPP withstands repeated motor-start surges; –55 °C to +175 °C rating supports operation in deep-well thermal gradients. | Use Scenario: Protecting analog sensor outputs (e.g., pressure, temperature) in nuclear instrumentation where single-event effects must be mitigated. IC Role / Device Role / Timing Role: Low-leakage (≤0.5 µA at VWM) TVS placed at sensor amplifier input to prevent latch-up without loading precision signal paths. Use Value: Radiation hardness eliminates need for shielding or derating; 4 pF avoids gain error in 24-bit sigma-delta ADC front-ends. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N8178US | Same electrical specs but non-RoHS (tin/lead plating); lacks e3 suffix; identical glass package and thermal performance. | Approved for legacy military hardware requiring Pb-based solder compatibility; not suitable for new RoHS-compliant designs. | Select 1N8178US only when leaded assembly process is mandated and environmental compliance is waived. |
| SMBJ110A | Surface-mount SMB package; 110 V VWM; 100 W PPP; 100 pF capacitance - 25× higher than 1N8178USE3/TR. | Used in commercial industrial controls where board space is constrained but speed <10 Mbps; unsuitable for RF or high-baud-rate lines. | Choose SMBJ110A only if SMT placement is required and capacitance tolerance allows ≥100 pF; avoid for >100 Mbps applications. |
Compared with 1N8178USE3/TR, 1N8178US offers identical protection performance but lacks RoHS compliance, while SMBJ110A trades ultra-low capacitance for compact size-making the 1N8178USE3/TR uniquely suited for high-speed, high-reliability, through-hole-mounted systems where signal fidelity and radiation tolerance are mandatory.
Availability
1N8178USE3/TR is available at Aetrix Electronics and suitable for avionics data buses, MIL-STD-1553B interfaces, and downhole telemetry systems requiring stable component supply across extended product lifecycles.
Supply support for 1N8178USE3/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and aerospace-grade components.
The 1N8149–1N8182 series was developed specifically for mission-critical transient protection in defense, space, and oilfield electronics where hermetic sealing, low capacitance, and Category 1 bonding are mandatory design requirements.
FAQ
What is the clamping voltage of the 1N8178USE3/TR at its rated surge current?
The 1N8178USE3/TR has a maximum clamping voltage (VC) of 183 V when subjected to a 300 A peak impulse current with a 10/1000 µs waveform. This value is measured at 25 °C and defines the upper voltage limit imposed on protected circuitry during a transient event. The 1N8178USE3/TR maintains this clamping performance across its full operating temperature range due to its hard-glass hermetic construction and stable avalanche characteristics.
Is the 1N8178USE3/TR suitable for bidirectional signal lines?
The 1N8178USE3/TR is unidirectional and not suitable for direct use on bidirectional lines. However, two 1N8178USE3/TR devices can be connected in anti-parallel (cathode-to-anode) to provide bidirectional protection with double the capacitance (8 pF). This configuration is documented in Microsemi's Figure 5 and retains the same 150 W peak pulse power rating per direction, making it viable for RS-422 or CAN FD bus protection where low capacitance remains critical.
Does the 1N8178USE3/TR meet IEC61000-4-5 lightning surge standards?
Yes, the 1N8178USE3/TR provides secondary lightning surge protection per select levels of IEC61000-4-5, including combination wave (1.2/50 µs voltage, 8/20 µs current) testing. Its 150 W peak pulse power rating and 183 V clamping voltage enable effective energy diversion for Level 3 (2 kV line-to-earth) and Level 4 (4 kV line-to-earth) applications when properly implemented with impedance-matched PCB layout and grounding. The 1N8178USE3/TR's hermetic seal ensures long-term reliability under repeated surge stress.
What is the meaning of the "e3" suffix in 1N8178USE3/TR?
"e3" in 1N8178USE3/TR indicates RoHS-compliant matte tin plating over copper leads, per JEDEC J-STD-609. It replaces traditional tin/lead plating and ensures compliance with EU Directive 2011/65/EU. The "TR" denotes tape-and-reel packaging per EIA-296 standard, enabling automated placement. The full designation confirms that the 1N8178USE3/TR meets environmental regulations without sacrificing the electrical or mechanical performance of the base 1N8178US device.
How does the 1N8178USE3/TR achieve its 4 pF capacitance?
The 1N8178USE3/TR achieves 4 pF capacitance via an integrated series-connected rectifier diode placed in anti-parallel with the main TVS junction. This architecture cancels parasitic junction capacitance while preserving unidirectional clamping behavior. Unlike conventional TVS diodes, this dual-junction design is intrinsic to the die structure-not an external circuit-and is validated across all 1N8149–1N8182 variants. The 1N8178USE3/TR maintains this 4 pF value at 0 V bias and up to 1 MHz, enabling RF and high-speed digital protection unmatched by standard TVS devices.
1N8178USE3/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 110V
- Voltage - Breakdown (Min):
- 124V
- Voltage - Clamping (Max) @ Ipp:
- 183V
- Current - Peak Pulse (10/1000µs):
- 820mA
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8178USE3/TR FAQ
1.How can I place an order for 1N8178USE3/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8178USE3/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8178USE3/TR reliable?
The price and inventory of 1N8178USE3/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8178USE3/TR is usually 5 days.
3.What payment methods are accepted for 1N8178USE3/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8178USE3/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8178USE3/TR?
1N8178USE3/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8178USE3/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8178USE3/TR?
For technical support, including 1N8178USE3/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8178USE3/TR requirements.
6.How does Aetrix verify that 1N8178USE3/TR is sourced from the original manufacturer or authorized distributors?
All 1N8178USE3/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8178USE3/TR meets industry standards.
7.What is the process for return or replacement of 1N8178USE3/TR?
All 1N8178USE3/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8178USE3/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8178USE3/TR part is unused and in its original packaging.
Return procedure for 1N8178USE3/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8178USE3/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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