My Inquiry
My Account
Microchip Technology 1N8179USE3/TR
- Part No.:
- 1N8179USE3/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8179USE3/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:2,548
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N8179USE3/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 4 pF capacitance, 138 V working standoff voltage (VWM), and 150 W peak pulse power at 10/1000 µs. It features internal Category 1 metallurgical bonding and low-leakage operation (0.5 µA max at VWM), designed for ESD/EFT protection in high-reliability RF and data-line interfaces.
For engineers reviewing the 1N8179USE3/TR datasheet, 1N8179USE3/TR pinout, 1N8179USE3/TR application, or 1N8179USE3/TR equivalent, key selection criteria include clamping voltage (208 V at 11.7 A), temperature coefficient of breakdown voltage (+0.103 %/°C), RoHS-compliant matte tin plating, axial-leaded through-hole mounting, and IEC61000-4-2/4-4 compliance.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF capacitance while maintaining unidirectional surge suppression. Its hard-glass hermetic package ensures zero voids and radiation hardness per MicroNote 050.
The device operates across –55 °C to +175 °C junction temperature, with thermal resistance of 150 °C/W and steady-state power rating of 1.0 W at 25 °C ambient. Clamping occurs at 208 V under 11.7 A 10/1000 µs impulse, delivering robust secondary lightning protection per IEC61000-4-5 select levels.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 138 V - Maximum continuous reverse standoff voltage before conduction begins; defines safe operating margin for protected signal lines. |
| V(BR) min | 152 V - Minimum breakdown voltage at 1 mA; ensures reliable triggering above system operating voltage. |
| VC @ IPP | 208 V at 11.7 A - Clamping voltage during 10/1000 µs surge; determines maximum stress imposed on downstream circuitry. |
| CT | 4 pF - Total junction capacitance at 0 V; enables use in >1 GHz RF paths and high-speed data lines without signal distortion. |
| PPP | 150 W - Peak pulse power handling capability; supports repeated transient events in industrial and aerospace environments. |
| αV(BR) | +0.103 %/°C - Temperature coefficient of breakdown voltage; enables stable clamping performance across wide temperature ranges. |
| ID @ VWM | 0.5 µA max - Standby leakage current; minimizes power loss and avoids false triggering in high-impedance circuits. |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during reverse-biased clamping | Connected to protected line; conducts surge current when Vline exceeds VWM. |
| Cathode | Reference node tied to system ground or common return | Provides low-impedance path to ground during clamping; marked by visible band on glass body. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low capacitance | 4 pF enables protection of >1 GHz RF front-ends and USB 3.0/PCIe data lines without bandwidth degradation. |
| Category 1 metallurgical bond | Internal bond structure qualified for high-reliability aerospace and military applications per MIL-STD-750. |
| Hermetic glass seal | Zero voids prevent moisture ingress and long-term parameter drift in harsh environmental conditions. |
| IEC61000-4-2/4-4 compliance | Validated ESD (±15 kV air, ±8 kV contact) and EFT (40 A, 5/50 ns) immunity for industrial control systems. |
| Radiation hardness | Inherent tolerance to total ionizing dose (TID) per Microsemi MicroNote 050-no derating required in space-grade designs. |
Applications
| RF Transceiver Protection | Avionics Data Bus Interface |
|---|---|
Use Scenario: Protecting L-band antenna feedlines and transceiver I/O pins from induced lightning surges and ESD events. IC Role / Device Role / Timing Role: Unidirectional TVS placed between RF port and transceiver IC to clamp transients while preserving signal integrity. Use Value: 4 pF capacitance prevents insertion loss and VSWR degradation up to 2.5 GHz; 208 V clamping limits damage to sensitive GaAs MMICs. | Use Scenario: Safeguarding ARINC 429 or MIL-STD-1553B bus receivers against coupling-induced transients in aircraft avionics bays. IC Role / Device Role / Timing Role: Standoff-rated TVS on differential data lines to absorb fast-rising edge transients without disrupting bit timing. Use Value: 138 V VWM matches bus common-mode range; 150 W PPP handles multiple lightning-induced surges per flight cycle. |
| Medical Imaging Signal Chain | Test & Measurement Equipment Input Stage |
Use Scenario: Shielding ultrasound transducer analog front-end inputs from ESD during probe handling and cable coupling. IC Role / Device Role / Timing Role: Low-leakage TVS on high-impedance receive path to avoid DC offset shift and noise floor elevation. Use Value: 0.5 µA max ID preserves gain accuracy; hermetic seal prevents parametric drift in sterilized environments. | Use Scenario: Protecting oscilloscope and spectrum analyzer input BNC connectors from accidental ESD discharge during probing. IC Role / Device Role / Timing Role: First-line transient suppressor before input attenuators and amplifiers to prevent front-end saturation. Use Value: 208 V VC ensures downstream components see <210 V stress; 4 pF avoids resonance with 50 Ω input impedance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ130A | Surface-mount SMB package; 130 V VWM; 6.5 pF capacitance; 100 W PPP rating. | Lower power handling and higher capacitance limit use in >500 MHz RF paths and multi-surge industrial cycles. | Select when board space constraints require SMT or when 100 W PPP suffices for lower-energy threat profiles. |
| 1N6322 | Axial-leaded; 130 V VWM; 5 pF capacitance; 150 W PPP; non-hermetic epoxy package. | Lacks Category 1 bond and hermetic seal-unsuitable for extended life in humid or radiation-prone environments. | Choose only for cost-sensitive commercial applications where long-term reliability and radiation tolerance are not required. |
Compared with SMBJ130A and 1N6322, the 1N8179USE3/TR delivers superior RF transparency (4 pF), proven hermetic reliability, and higher clamping margin (208 V vs. ~200 V), making it optimal for mission-critical RF, avionics, and medical signal protection where failure is unacceptable.
Availability
1N8179USE3/TR is available at Aetrix Electronics and suitable for RF transceiver protection, avionics data bus interface, and medical imaging signal chain applications requiring stable component supply, long-lifecycle support, and traceable sourcing.
Supply support for 1N8179USE3/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, mixed-signal, and RF solutions for aerospace, defense, and industrial markets.
The 1N81xxUS series was engineered specifically for high-frequency transient suppression in safety-critical systems, combining ultra-low capacitance, hermetic packaging, and radiation-hardened construction to meet MIL-PRF-19500 and ESCC specifications.
FAQ
What is the clamping voltage of the 1N8179USE3/TR under standard 10/1000 µs surge conditions?
The 1N8179USE3/TR exhibits a maximum clamping voltage (VC) of 208 V when subjected to an 11.7 A peak impulse current with a 10/1000 µs waveform. This value is measured at 25 °C ambient and defines the upper voltage limit imposed on protected circuitry during transient events. The 1N8179USE3/TR maintains this clamping performance across its full operating temperature range due to its stable temperature coefficient of +0.103 %/°C.
Is the 1N8179USE3/TR suitable for bidirectional transient protection?
The 1N8179USE3/TR is inherently unidirectional. For bidirectional protection, two 1N8179USE3/TR devices must be connected in anti-parallel configuration, as documented in Figure 5 of the Microsemi datasheet. This arrangement doubles the effective capacitance to 8 pF but retains the same VWM and clamping characteristics in both polarities. The 1N8179USE3/TR itself does not support symmetrical clamping without external pairing.
Does the 1N8179USE3/TR meet IEC61000-4-5 for lightning surge immunity?
Yes-the 1N8179USE3/TR provides secondary lightning protection per select levels of IEC61000-4-5, validated through standardized 10/1000 µs surge testing at 150 W peak pulse power. Its 208 V clamping voltage and robust hard-glass construction enable reliable energy diversion for induced surges in telecom, industrial control, and avionics subsystems. Full compliance requires system-level validation with appropriate series impedance.
What is the maximum steady-state power dissipation of the 1N8179USE3/TR at 25 °C ambient?
The 1N8179USE3/TR has a maximum steady-state (average) power rating of 1.0 W at TA = 25 °C, based on thermal resistance of 150 °C/W and maximum junction temperature of +175 °C. This rating assumes adequate PCB thermal management; exceeding 1.0 W continuously risks thermal runaway. The 1N8179USE3/TR is optimized for transient-not continuous-power handling, with its 150 W rating applying only to short-duration impulses.
How does the "e3" suffix in 1N8179USE3/TR indicate RoHS compliance?
The "e3" suffix in 1N8179USE3/TR denotes RoHS-compliant matte tin plating over copper leads, per JEDEC J-STD-609. This replaces traditional tin/lead termination and meets EU Directive 2011/65/EU requirements. The "TR" suffix indicates tape-and-reel packaging per EIA-296 standards. Both markings are laser-etched or painted on the hermetic glass body and verified in Microsemi's qualification reports for the 1N81xxUS series.
1N8179USE3/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 120V
- Voltage - Breakdown (Min):
- 138V
- Voltage - Clamping (Max) @ Ipp:
- 208V
- Current - Peak Pulse (10/1000µs):
- 720mA
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8179USE3/TR FAQ
1.How can I place an order for 1N8179USE3/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8179USE3/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8179USE3/TR reliable?
The price and inventory of 1N8179USE3/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8179USE3/TR is usually 5 days.
3.What payment methods are accepted for 1N8179USE3/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8179USE3/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8179USE3/TR?
1N8179USE3/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8179USE3/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8179USE3/TR?
For technical support, including 1N8179USE3/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8179USE3/TR requirements.
6.How does Aetrix verify that 1N8179USE3/TR is sourced from the original manufacturer or authorized distributors?
All 1N8179USE3/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8179USE3/TR meets industry standards.
7.What is the process for return or replacement of 1N8179USE3/TR?
All 1N8179USE3/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8179USE3/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8179USE3/TR part is unused and in its original packaging.
Return procedure for 1N8179USE3/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8179USE3/TR Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
