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Microchip Technology 1N8179US/TR
- Part No.:
- 1N8179US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8179US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:7,049
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Product details
Overview
1N8179US/TR from Microsemi is a voidless-hermetically-sealed unidirectional Transient Voltage Suppressor (TVS) diode designed for high-reliability, high-frequency transient protection. It delivers 150 W peak pulse power at 10/1000 µs, 4 pF capacitance, and a 120 V working standoff voltage (VWM), with clamping voltage of 208 V at 1.95 A peak impulse current - ideal for ESD/EFT protection in aerospace and telecom front-end circuits.
For engineers reviewing the 1N8179US/TR datasheet, 1N8179US/TR pinout, 1N8179US/TR application, or 1N8179US/TR equivalent, this page provides verified electrical parameters, hermetic glass package details, low-capacitance TVS architecture, IEC61000-4-2/4-4 compliance evidence, and direct alternatives with documented clamping and standoff voltage differences.
Technical Context
The 1N8179US/TR implements a unique series-connected rectifier diode opposing the TVS junction to achieve ultra-low 4 pF total capacitance - critical for preserving signal integrity above 100 MHz. Its Category 1 internal metallurgical bond and voidless hard-glass construction ensure radiation hardness and MIL-STD-750-compliant ESD immunity.
Rated for -55°C to +175°C junction temperature, it sustains 120 V DC working standoff (VWM) with only 0.5 µA standby leakage, and clamps transients to 208 V at 1.95 A (10/1000 µs), enabling robust secondary lightning protection per IEC61000-4-5 Level 3.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 120 V - maximum continuous reverse voltage before conduction; sets operating margin for protected line. |
| VC @ IPP | 208 V at 1.95 A - clamping voltage during 10/1000 µs surge; defines worst-case overvoltage seen by downstream IC. |
| CT | 4 pF - total small-signal capacitance; enables use in >100 MHz RF/data lines without signal distortion. |
| PPP | 150 W - peak pulse power rating at 25°C; supports repeated transient suppression in telecom interfaces. |
| ID @ VWM | 0.5 µA - leakage current at rated standoff; ensures minimal power loss and no false triggering in high-impedance circuits. |
| TJ Range | -55°C to +175°C - extended thermal range for operation in avionics, downhole, or engine-control environments. |
| RθJA | 150°C/W - thermal resistance junction-to-ambient; requires adequate PCB copper area for sustained 1 W average dissipation. |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink (reverse-biased side) | Connected to protected line; conducts surge current toward ground when voltage exceeds VWM. |
| Cathode | Reference terminal (marked with band) | Connected to system ground or low-impedance return path; defines polarity for unidirectional clamping. |
Key Features
| Feature | Design Value |
|---|---|
| Low capacitance architecture | 4 pF achieved via series-opposed rectifier diode - preserves bandwidth in USB 3.0, PCIe, or RF front-ends. |
| Category 1 metallurgical bond | Internal bond qualified for high-reliability applications including space-grade and military systems per MicroNote 050. |
| Voidless hermetic seal | Hard-glass enclosure prevents moisture ingress and parameter drift over 20+ year field life in harsh environments. |
| IEC61000-4-2/4-4 compliance | Validated ESD (±15 kV air, ±8 kV contact) and EFT (40 A, 5/50 ns) immunity - eliminates need for external filtering. |
Applications
| Telecom Line Interface Protection | Aerospace Data Bus Clamping |
|---|---|
Use Scenario: Protecting RS-485/RS-422 transceivers on outdoor base station backhaul links exposed to induced surges and lightning-induced transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between differential pair and ground to clamp common-mode surges while preserving signal rise time. Use Value: 4 pF capacitance avoids skew or attenuation at 20 Mbps; 208 V clamping ensures transceiver survival under IEC61000-4-5 Level 3 (1 kV line-ground). |
Use Scenario: Safeguarding ARINC 429 receivers in flight control computers where failure is not tolerable. IC Role / Device Role / Timing Role: Standoff-rated TVS on data input pins to suppress ESD events during maintenance or connector mating. Use Value: 0.5 µA leakage prevents bias shift in high-impedance receiver inputs; -55°C to +175°C rating supports operation across all aircraft altitudes and temperatures. |
| Medical Imaging Signal Chain | Industrial Ethernet PHY Protection |
Use Scenario: Shielding analog front-end ADC inputs in MRI gradient coil monitoring systems from switching noise and cable discharge events. IC Role / Device Role / Timing Role: Low-capacitance TVS on sensor signal paths to prevent latch-up without degrading SNR. Use Value: 4 pF capacitance avoids resonance with 50 Ω source impedance up to 800 MHz; hermetic seal prevents outgassing in vacuum-compatible enclosures. |
Use Scenario: Securing 100BASE-TX transformer center-taps against ESD and fast transients in factory automation controllers. IC Role / Device Role / Timing Role: Unidirectional TVS on isolated PHY side to clamp surges without compromising galvanic isolation. Use Value: 120 V VWM matches typical Ethernet common-mode voltage margins; 150 W PPP handles multiple repetitive EFT bursts per IEC61000-4-4. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar TVS diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ120A | Surface-mount SMB package; 120 V VWM; 219 V VC @ 1.9 A; 6.5 pF capacitance. | Higher capacitance limits use in >50 MHz designs; lacks hermetic seal and Category 1 bond. | Select when board space is constrained and radiation hardness is not required. |
| 1N8179US | Same die and specs as 1N8179US/TR but supplied in bulk (non-tape/reel); identical electricals and package. | No functional difference; differs only in packaging format for manual assembly vs. automated pick-and-place. | Choose 1N8179US/TR for SMT production; select 1N8179US for prototyping or low-volume hand soldering. |
Compared with SMBJ120A, the 1N8179US/TR offers lower capacitance (4 pF vs. 6.5 pF) and hermetic reliability for mission-critical systems, while 1N8179US shares identical performance but omits tape-and-reel logistics - making the TR variant optimal for high-volume automated manufacturing requiring traceable reel delivery.
Availability
1N8179US/TR is available at Aetrix Electronics and suitable for telecom line interface protection, aerospace data bus clamping, medical imaging signal chain safeguarding, and industrial Ethernet PHY protection requiring stable component supply across extended temperature and reliability requirements.
Supply support for 1N8179US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.
The 1N8179US/TR belongs to Microsemi's legacy "LDS" series of hermetic TVS diodes, engineered specifically for fail-safe transient suppression in systems where parameter stability, radiation tolerance, and long-term hermeticity are non-negotiable.
FAQ
What is the clamping voltage of the 1N8179US/TR under standard 10/1000 µs surge conditions?
The 1N8179US/TR clamps to a maximum of 208 V when subjected to a 1.95 A peak impulse current with a 10/1000 µs waveform. This value is guaranteed per the Microsemi T4-LDS datasheet and defines the upper voltage limit imposed on protected circuitry during transient events - critical for ensuring downstream ICs remain within absolute maximum ratings.
Does the 1N8179US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes, the 1N8179US/TR is validated for ESD immunity per IEC61000-4-2 (±15 kV air, ±8 kV contact) and electrical fast transient (EFT) immunity per IEC61000-4-4 (40 A, 5/50 ns). These capabilities are enabled by its low-leakage design (0.5 µA at 120 V) and robust junction structure, eliminating need for supplemental filtering in certified end equipment.
What is the meaning of "US" and "TR" in the 1N8179US/TR part number?
In the 1N8179US/TR designation, "US" indicates the Microsemi-standardized axial-leaded, hermetically sealed glass package with tungsten slugs and cathode band marking; "TR" specifies tape-and-reel packaging per EIA-296, enabling automated SMT placement. The base device 1N8179US is electrically identical but supplied in bulk.
Can the 1N8179US/TR be used in bidirectional protection configurations?
Yes - two 1N8179US/TR devices can be connected in anti-parallel (anode-to-cathode) to provide bidirectional clamping. Per Microsemi Figure 5, this configuration doubles the effective capacitance to 8 pF but retains full 150 W surge capability in both polarities, supporting AC-coupled interfaces like analog video or legacy telecom lines.
What is the thermal resistance and maximum steady-state power dissipation of the 1N8179US/TR?
The 1N8179US/TR has a junction-to-ambient thermal resistance (RθJA) of 150°C/W and a maximum steady-state average power dissipation (PM(AV)) of 1.0 W at TA = 25°C. Effective heat sinking via PCB copper pour is required to maintain junction temperature below 175°C under continuous stress - especially important in enclosed or high-ambient-temperature deployments.
1N8179US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 120V
- Voltage - Breakdown (Min):
- 138V
- Voltage - Clamping (Max) @ Ipp:
- 208V
- Current - Peak Pulse (10/1000µs):
- 720mA
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8179US/TR FAQ
1.How can I place an order for 1N8179US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8179US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8179US/TR reliable?
The price and inventory of 1N8179US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8179US/TR is usually 5 days.
3.What payment methods are accepted for 1N8179US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8179US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8179US/TR?
1N8179US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8179US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8179US/TR?
For technical support, including 1N8179US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8179US/TR requirements.
6.How does Aetrix verify that 1N8179US/TR is sourced from the original manufacturer or authorized distributors?
All 1N8179US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8179US/TR meets industry standards.
7.What is the process for return or replacement of 1N8179US/TR?
All 1N8179US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8179US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8179US/TR part is unused and in its original packaging.
Return procedure for 1N8179US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8179US/TR Tags
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