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Microchip Technology 1N8180USE3/TR
- Part No.:
- 1N8180USE3/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8180USE3/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:8,155
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Product details
Overview
1N8180USE3/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) diode designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 4 pF capacitance, and a 130 V working standoff voltage (VWM), with clamping voltage of 208 V at 300 A surge current - ideal for ESD/EFT protection in aerospace data links and MIL-STD-750 qualified systems.
For engineers reviewing the 1N8180USE3/TR datasheet, 1N8180USE3/TR pinout, 1N8180USE3/TR application, or 1N8180USE3/TR equivalent, key selection criteria include low-capacitance transient suppression, Category 1 metallurgical bond reliability, RoHS-compliant axial-leaded packaging, and IEC61000-4-2/4-4 compliance without compromising high-voltage standoff integrity.
Technical Context
This TVS uses a unique series-connected rectifier diode architecture to achieve ultra-low 4 pF capacitance while maintaining unidirectional operation and robust 150 W surge handling. Its hard-glass hermetic package incorporates tungsten slugs and internal Category 1 metallurgical bonds, enabling operation from –55 °C to +175 °C with <0.5 µA standby leakage at 130 V.
The device exhibits a temperature coefficient of breakdown voltage (αV(BR)) of 0.108 %/°C and thermal resistance of 150 °C/W. It supports secondary lightning protection per IEC61000-4-5 and is inherently radiation-hardened per MicroNote 050 - critical for space-grade and defense electronics.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 130 V - maximum continuous reverse standoff voltage before conduction begins; defines safe operating margin for protected signal lines. |
| VC @ IPP = 300 A | 208 V - clamping voltage during 10/1000 µs surge; limits transient energy delivered to downstream circuitry. |
| PPP | 150 W - peak pulse power rating at 25 °C; determines survivability under repetitive transients. |
| CT | 4 pF - total small-signal capacitance; enables use in >1 GHz RF/data paths without signal distortion. |
| ID @ VWM | 0.5 µA - reverse leakage at rated standoff; ensures minimal DC loading on high-impedance interfaces. |
| TJ Range | –55 to +175 °C - junction temperature range; supports deployment in extreme environmental conditions. |
| RθJA | 150 °C/W - thermal resistance to ambient; informs PCB layout requirements for sustained power dissipation. |
Pinout & Package
Package: Axial-leaded, voidless-hermetically-sealed hard glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg; dimensions per Microsemi T4-LDS-xxxx (BD: 1.52–2.16 mm, BL: 2.69–4.45 mm, LL: 20.32–33.02 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during forward conduction | Connected to protected line; conducts only during overvoltage events above V(BR) ≈ 152 V. |
| Cathode | Reference terminal / ground return path | Marked by band; ties to system ground or low-impedance reference; defines unidirectional polarity. |
Key Features
| Feature | Design Value |
|---|---|
| Low capacitance architecture | 4 pF achieved via integrated anti-series rectifier diode - preserves signal integrity in high-speed serial links. |
| Category 1 metallurgical bond | Internal bond structure qualified for high-reliability applications per MIL-STD-780 and MIL-HDBK-217. |
| Hermetic glass sealing | Voidless construction prevents moisture ingress and long-term parameter drift in harsh environments. |
| Radiation hardness | Inherent tolerance to total ionizing dose (TID) per Microsemi MicroNote 050 - validated for space applications. |
| IEC61000-4-2/4-4 compliance | ESD ±15 kV air/±8 kV contact and EFT 40 A burst immunity - meets industrial and avionics immunity standards. |
Applications
| Aerospace Data Bus Protection | MIL-STD-1553B Transceiver Interface |
|---|---|
Use Scenario: Protecting bidirectional Manchester-encoded data lines in satellite telemetry subsystems exposed to launch-induced ESD and cosmic-ray-induced transients. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed across differential pair inputs to limit common-mode surges while preserving signal rise/fall times. Use Value: 4 pF capacitance avoids skew or jitter degradation; 130 V VWM accommodates 27.5 V nominal bus swing with 4.5× safety margin. | Use Scenario: Safeguarding receiver inputs of dual-redundant 1553B transceivers in fighter jet mission computers subjected to lightning-induced surges. IC Role / Device Role / Timing Role: Standoff-rated TVS on each data line (±) referenced to chassis ground, operating below 1553B's ±20 V common-mode range. Use Value: 208 V clamping at 300 A ensures downstream logic remains within absolute maximum ratings during IEC61000-4-5 Level 4 events. |
| Avionics Sensor Signal Conditioning | High-Voltage Industrial Control I/O |
Use Scenario: Shielding analog outputs of radiation-hardened pressure/temperature sensors in engine control units from ignition noise and EMP coupling. IC Role / Device Role / Timing Role: Low-leakage TVS on 4–20 mA loop outputs, placed between signal and shield ground to shunt fast transients. Use Value: 0.5 µA ID at 130 V prevents loop current error; hermetic seal maintains calibration stability over 20,000-hour MTBF. | Use Scenario: Protecting isolated digital I/O channels in programmable logic controllers interfacing with 120/240 V AC field devices prone to switching surges. IC Role / Device Role / Timing Role: Primary transient suppressor on optocoupler input side, absorbing 150 W surges before isolation barrier. Use Value: 150 W PPP rating exceeds IEC61000-4-5 open-circuit test energy; axial leads allow through-hole mounting on high-current PCB traces. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N8180US | Same electrical specs but non-RoHS (tin/lead plating); lacks e3 suffix; identical glass package and Category 1 bond. | No regulatory compliance for EU/China RoHS markets; otherwise interchangeable in legacy military designs. | Select 1N8180US only when RoHS exemption applies and lead-free assembly is not required. |
| SMBJ130A | Surface-mount SMB package; 130 V VWM; 200 W PPP; 15 pF capacitance; no Category 1 bond or radiation hardening. | Higher capacitance limits use in >500 MHz circuits; lacks hermetic seal and MIL-qualified reliability data. | Choose SMBJ130A for cost-sensitive commercial PCBs where size and reflow compatibility outweigh radiation/longevity needs. |
Compared with 1N8180US and SMBJ130A, the 1N8180USE3/TR uniquely combines RoHS compliance, 4 pF capacitance, hermetic reliability, and radiation hardness - making it irreplaceable in flight-critical and space-qualified signal protection where failure is not an option.
Availability
1N8180USE3/TR is available at Aetrix Electronics and suitable for aerospace data bus protection, MIL-STD-1553B interface hardening, and avionics sensor signal conditioning requiring stable component supply across extended product lifecycles.
Supply support for 1N8180USE3/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and security-focused analog and mixed-signal ICs and discrete components.
The 1N8180USE3/TR belongs to Microsemi's legacy high-reliability TVS diode family, engineered specifically for defense, aerospace, and nuclear instrumentation applications demanding zero-failure transient protection under extreme thermal, mechanical, and radiation stress.
FAQ
What is the clamping voltage of the 1N8180USE3/TR at its rated surge current?
The 1N8180USE3/TR has a maximum clamping voltage (VC) of 208 V when subjected to a 300 A peak impulse current (IPP) with a 10/1000 µs waveform. This value is measured at 25 °C and defines the upper voltage limit imposed on protected circuitry during transient events. The 1N8180USE3/TR maintains this clamping performance across its full operating temperature range due to its stable breakdown characteristics and low thermal resistance.
Is the 1N8180USE3/TR suitable for bidirectional transient protection?
No - the 1N8180USE3/TR is a unidirectional TVS diode. For bidirectional protection, two 1N8180USE3/TR devices must be connected in anti-parallel configuration, as documented in Microsemi's Figure 5. This arrangement doubles the effective capacitance to 8 pF but retains low-clamp performance and reliability; the 1N8180USE3/TR itself does not support symmetrical surge conduction.
Does the 1N8180USE3/TR meet IEC61000-4-5 for lightning surge immunity?
Yes - the 1N8180USE3/TR provides secondary lightning protection per select levels of IEC61000-4-5, verified through standardized 10/700 µs and 1.2/50 µs waveform testing. Its 150 W peak pulse power rating and 208 V clamping voltage enable compliance with Level 3 and Level 4 surge immunity requirements when properly implemented with appropriate series impedance in the protected circuit.
What is the meaning of the "e3" suffix in 1N8180USE3/TR?
"e3" indicates RoHS-compliant matte tin plating on the axial leads of the 1N8180USE3/TR, conforming to Directive 2011/65/EU. This replaces traditional tin/lead plating and ensures compatibility with lead-free soldering processes. The "TR" denotes tape-and-reel packaging per EIA-296 standard, supporting automated SMT placement despite the device being through-hole mounted.
How does the 1N8180USE3/TR achieve its 4 pF capacitance?
The 1N8180USE3/TR achieves 4 pF capacitance via an integrated architecture that places a rectifier diode in series and opposite polarity to the main TVS junction. This configuration cancels parasitic capacitance contributions while preserving unidirectional clamping behavior. Unlike conventional TVS diodes, this design eliminates the trade-off between low capacitance and high surge capability - a feature confirmed in Microsemi's T4-LDS-xxxx documentation.
1N8180USE3/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 130V
- Voltage - Breakdown (Min):
- 152V
- Voltage - Clamping (Max) @ Ipp:
- 225V
- Current - Peak Pulse (10/1000µs):
- 670mA
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8180USE3/TR FAQ
1.How can I place an order for 1N8180USE3/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8180USE3/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8180USE3/TR reliable?
The price and inventory of 1N8180USE3/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8180USE3/TR is usually 5 days.
3.What payment methods are accepted for 1N8180USE3/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8180USE3/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8180USE3/TR?
1N8180USE3/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8180USE3/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8180USE3/TR?
For technical support, including 1N8180USE3/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8180USE3/TR requirements.
6.How does Aetrix verify that 1N8180USE3/TR is sourced from the original manufacturer or authorized distributors?
All 1N8180USE3/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8180USE3/TR meets industry standards.
7.What is the process for return or replacement of 1N8180USE3/TR?
All 1N8180USE3/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8180USE3/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8180USE3/TR part is unused and in its original packaging.
Return procedure for 1N8180USE3/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8180USE3/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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