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Microchip Technology 1N8180US/TR
- Part No.:
- 1N8180US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8180US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:2,949
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Product details
Overview
1N8180US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 130 V working standoff voltage (VWM), 208 V maximum clamping voltage (VC) at 1.95 A IPP, and ultra-low 4 pF capacitance - enabling ESD/EFT protection in RF front-ends and data interfaces.
For engineers reviewing the 1N8180US/TR datasheet, 1N8180US/TR pinout, 1N8180US/TR application, or 1N8180US/TR equivalent, key selection criteria include low-capacitance transient suppression for >100 MHz analog/digital lines, Category 1 metallurgical bond reliability, hermetic glass packaging for harsh environments, and axial-leaded through-hole mounting compatibility with MIL-STD-750 ESD robustness.
Technical Context
The 1N8180US/TR integrates a unique series-opposed rectifier diode to achieve 4 pF total capacitance - the lowest among 150 W TVS devices - while maintaining unidirectional clamping behavior. Its hard-glass hermetic construction uses internal tungsten slugs and Category 1 metallurgical bonds for radiation hardness and thermal stability up to +175 °C junction temperature.
It operates as a voltage-clamped surge protector: below 130 V (VWM), leakage remains ≤0.5 µA; above breakdown (~152 V at 1 mA), it clamps transients to ≤208 V at 1.95 A (10/1000 µs). Thermal resistance is 150 °C/W, limiting steady-state dissipation to 1.0 W at 25 °C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 130 V - Maximum continuous reverse voltage before leakage exceeds 0.5 µA; defines safe operating range for protected signal lines. |
| V(BR) min | 152 V at 1 mA - Minimum breakdown voltage threshold; ensures consistent clamping onset across temperature and unit variation. |
| VC @ IPP | 208 V at 1.95 A (10/1000 µs) - Clamped voltage during surge; determines maximum stress on downstream ICs. |
| CT | 4 pF - Total terminal capacitance at 0 V; enables use in >100 MHz RF paths without signal distortion or insertion loss. |
| PPP | 150 W - Peak pulse power rating; supports IEC61000-4-5 Level 3 secondary lightning surges (1 kV/2 Ω). |
| TJ Range | –55 to +175 °C - Junction temperature range; validates operation in aerospace, downhole, and military embedded systems. |
| RθJA | 150 °C/W - Thermal resistance to ambient; requires PCB copper area or heatsinking for sustained power handling beyond 1 W. |
Pinout & Package
Package: Axial-leaded, voidless-hermetically-sealed hard glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink (reverse-biased side) | Connected to protected line; conducts surge current toward ground when clamping threshold exceeded. |
| Cathode | Reference/ground node (marked with band) | Connected to system ground or low-impedance return; establishes polarity-sensitive clamping direction. |
Key Features
| Feature | Design Value |
|---|---|
| Lowest capacitance in 150 W class | 4 pF enables protection of GHz-range RF amplifiers and high-speed serial links without bandwidth degradation. |
| Category 1 metallurgical bond | Internal bond structure qualified per MIL-PRF-19500 for high-reliability applications including space and avionics. |
| Hermetic glass sealing | Voidless construction prevents moisture ingress and parametric drift over 20+ years in humid or corrosive environments. |
| ESD immunity | Nonsensitive per MIL-STD-750 Method 1020 - survives >8 kV HBM without parameter shift or failure. |
| IEC compliance | Validated for IEC61000-4-2 (±8 kV contact), IEC61000-4-4 (±2 kV EFT), and select IEC61000-4-5 lightning levels. |
Applications
| RF Transceiver Front-End Protection | Avionics Data Bus Interface |
|---|---|
Use Scenario: Protecting L-band (1–2 GHz) antenna feedlines and LNAs from induced ESD and nearby lightning coupling. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between antenna port and RF switch/LNA input. Use Value: 4 pF capacitance avoids detuning of matching networks; 208 V clamping limits LNA gate oxide stress during 150 W surges. | Use Scenario: Safeguarding ARINC 429 or MIL-STD-1553B differential receivers against ESD events on aircraft wiring harnesses. IC Role / Device Role / Timing Role: Discrete TVS on each receiver input line, referenced to chassis ground. Use Value: Hermetic seal and Category 1 bonding ensure zero field failures over 30-year airframe service life. |
| Downhole Telemetry Systems | Military Radar Power Supply Monitoring |
Use Scenario: Transient suppression on 24 V sensor supply lines in oil/gas wellhead electronics exposed to thermal cycling and vibration. IC Role / Device Role / Timing Role: Standoff-rated TVS on DC input rail upstream of DC/DC converters. Use Value: –55 to +175 °C operation maintains 130 V VWM across full downhole temperature profile; 150 W PPP handles switching transients. | Use Scenario: Protecting analog monitoring circuits (voltage/current sense) in GaN-based radar power supplies from switching noise and load dump. IC Role / Device Role / Timing Role: Low-capacitance TVS on precision shunt resistor feedback nodes. Use Value: 4 pF minimizes phase error in high-frequency current sensing; 0.5 µA ID preserves measurement accuracy at 130 V bias. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ130A | Surface-mount SMB package; 4.5 pF capacitance; 130 V VWM; 219 V VC @ 1.7 A; JEDEC-qualified but non-hermetic epoxy. | Not suitable for vacuum, high-humidity, or radiation-intensive environments due to moisture permeability and no Category 1 bond. | Select only for cost-sensitive commercial PCBs where hermeticity and long-term parametric stability are not required. |
| 1N6314 | Axial-leaded, hermetic glass; 130 V VWM; 219 V VC @ 1.7 A; 5.5 pF capacitance; no Category 1 bond; lower surge rating (100 W). | Lacks radiation hardness and fails MIL-STD-750 ESD testing; limited to industrial-grade reliability requirements. | Acceptable for non-critical infrastructure monitoring where 4 pF and Category 1 are unnecessary. |
Compared with SMBJ130A and 1N6314, the 1N8180US/TR uniquely combines 4 pF capacitance, 150 W surge capability, hermetic sealing, and Category 1 metallurgical bonding - making it the only option qualified for extended-life aerospace, downhole, and nuclear instrumentation applications.
Availability
1N8180US/TR is available at Aetrix Electronics and suitable for RF front-end protection, avionics interface hardening, and downhole telemetry systems requiring stable component supply across extended product lifecycles.
Supply support for 1N8180US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, RF, and radiation-hardened components for defense, aerospace, and industrial markets.
The 1N8149–1N8182 series was engineered specifically for mission-critical transient protection where failure is unacceptable - emphasizing hermetic integrity, ultra-low capacitance, and extreme environmental survivability.
FAQ
What is the clamping voltage of the 1N8180US/TR under a standard 10/1000 µs surge?
The 1N8180US/TR clamps to a maximum of 208 V when subjected to a 1.95 A peak impulse current with a 10/1000 µs waveform. This value is specified in the Electrical Characteristics table and represents the upper limit of voltage seen by downstream circuitry during a worst-case transient event. The 1N8180US/TR achieves this performance while maintaining only 4 pF capacitance - critical for preserving signal fidelity in high-frequency designs.
Is the 1N8180US/TR suitable for bidirectional transient protection?
No - the 1N8180US/TR is strictly unidirectional. For bidirectional protection, two 1N8180US/TR devices must be connected in anti-parallel, as shown in Figure 5 of the datasheet. This configuration doubles the effective capacitance to 8 pF but retains the same clamping performance per polarity. The 1N8180US/TR itself has a cathode band marking and only conducts surge current from anode to cathode.
Does the 1N8180US/TR meet RoHS requirements?
Yes - the "e3" suffix in the full part number (1N8180US/TR-e3) indicates RoHS-compliant matte tin plating over copper leads. The base 1N8180US/TR is offered in both RoHS and non-RoHS versions; ordering must specify the e3 variant for lead-free compliance. All hermetic glass body materials are inherently RoHS-compatible.
What is the maximum steady-state power dissipation for the 1N8180US/TR?
The 1N8180US/TR has a maximum steady-state (average) power rating of 1.0 W at 25 °C ambient temperature. This limit arises from its 150 °C/W thermal resistance and 175 °C maximum junction temperature. Derating is required above 25 °C - for example, at 70 °C ambient, usable power drops to approximately 0.7 W. The 1N8180US/TR is intended for transient, not continuous, power dissipation.
How does the 1N8180US/TR achieve its 4 pF capacitance?
The 1N8180US/TR achieves 4 pF capacitance via a patented internal architecture: a TVS junction is placed in series with a reverse-oriented rectifier diode inside the same hermetic glass package. This configuration cancels parasitic capacitance contributions while preserving unidirectional clamping. Unlike conventional TVS diodes, this dual-junction design is intrinsic to the 1N8149–1N8182 family and is not achievable with external component combinations.
1N8180US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 130V
- Voltage - Breakdown (Min):
- 152V
- Voltage - Clamping (Max) @ Ipp:
- 225V
- Current - Peak Pulse (10/1000µs):
- 670mA
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8180US/TR FAQ
1.How can I place an order for 1N8180US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8180US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8180US/TR reliable?
The price and inventory of 1N8180US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8180US/TR is usually 5 days.
3.What payment methods are accepted for 1N8180US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8180US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8180US/TR?
1N8180US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8180US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8180US/TR?
For technical support, including 1N8180US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8180US/TR requirements.
6.How does Aetrix verify that 1N8180US/TR is sourced from the original manufacturer or authorized distributors?
All 1N8180US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8180US/TR meets industry standards.
7.What is the process for return or replacement of 1N8180US/TR?
All 1N8180US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8180US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8180US/TR part is unused and in its original packaging.
Return procedure for 1N8180US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8180US/TR Tags
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