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Microchip Technology 1N8181USE3/TR
- Part No.:
- 1N8181USE3/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8181USE3/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
1N8181USE3/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 150 W peak pulse power, 4 pF capacitance, and 150 V working standoff voltage (VWM), designed for high-reliability ESD/EFT protection in RF front-ends and aerospace data links.
For engineers reviewing the 1N8181USE3/TR datasheet, 1N8181USE3/TR pinout, 1N8181USE3/TR application, or 1N8181USE3/TR equivalent, key selection criteria include low-capacitance clamping performance at 10/1000 µs waveform, Category 1 metallurgical bond reliability, RoHS-compliant axial-leaded package, and IEC61000-4-2/4-4 compliance without layout compromise.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF total capacitance while maintaining unidirectional clamping behavior. Its hard-glass hermetic seal and tungsten slug construction enable operation from –55 °C to +175 °C junction temperature.
The device delivers 11.7 A peak impulse current (IPP) at 10/1000 µs with 261 V clamping voltage (VC), supporting secondary lightning protection per IEC61000-4-5 Level 3. Standby leakage remains ≤0.5 µA at 150 V VWM.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 150 V - Maximum continuous reverse-bias voltage before breakdown; sets operating margin for protected signal lines. |
| V(BR) min | 171 V - Minimum breakdown voltage at 1 mA; ensures reliable triggering above system operating voltage. |
| VC @ IPP | 261 V - Clamping voltage at 11.7 A surge; defines worst-case voltage seen by downstream circuitry. |
| CT | 4 pF - Total capacitance at 0 V; preserves signal integrity in >1 GHz RF paths and high-speed serial interfaces. |
| PPP | 150 W - Peak pulse power rating at 10/1000 µs; enables robust handling of ESD and EFT transients. |
| ID @ VWM | ≤0.5 µA - Standby leakage current; minimizes power loss and avoids false triggering in low-current bias networks. |
| TJ Range | –55 to +175 °C - Junction temperature range; supports deployment in avionics, downhole, and military-grade environments. |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink terminal during clamping | Connected to protected line; conducts surge current to ground when VWM exceeded. |
| Cathode | Reference terminal (marked with band) | Connected to system ground or low-impedance return; establishes unidirectional conduction polarity. |
Key Features
| Feature | Design Value |
|---|---|
| Low capacitance architecture | 4 pF achieved via integrated series rectifier diode-enables use in 5G RF front-ends without bandwidth degradation. |
| Category 1 metallurgical bond | Internal high-reliability bond structure qualified for space and defense applications per MIL-STD-750 Method 1020. |
| Hermetic glass sealing | Voidless hard-glass enclosure prevents moisture ingress and parametric drift over 20+ year service life. |
| IEC61000-4-2/4-4 compliance | Validated ESD (±15 kV air/±8 kV contact) and EFT (±2 kV) immunity-eliminates need for external filtering in certified designs. |
| Triple-layer passivation | Surface protection against contamination and ion migration-critical for high-humidity or salt-fog operational environments. |
Applications
| Radar Transceiver Front-End | Satellite Telemetry Link |
|---|---|
Use Scenario: Protecting LNA input stages from lightning-induced surges and antenna-coupled ESD in X-band radar systems. IC Role / Device Role / Timing Role: Unidirectional TVS placed directly at SMA connector interface to clamp transients before signal path enters GaAs MMIC. Use Value: 4 pF capacitance avoids resonant detuning of 8–12 GHz matching networks; 261 V VC limits damage to LNAs rated for 28 V supply. | Use Scenario: Shielding S-band telemetry receivers on LEO satellites from launch-induced ESD and solar flare coupling. IC Role / Device Role / Timing Role: Primary transient protector on downlink RF input line, mounted adjacent to RF switch IC. Use Value: –55 to +175 °C operation survives thermal cycling in orbit; Category 1 bond ensures zero failure under radiation exposure. |
| Aerospace Avionics Data Bus | High-Speed Serial Test Equipment |
Use Scenario: Safeguarding ARINC 429 receiver inputs against induced transients during aircraft ground handling and engine start. IC Role / Device Role / Timing Role: Point-of-entry protection on twisted-pair differential line before isolation transformer. Use Value: 150 V VWM matches bus common-mode range; 0.5 µA ID prevents loading of 22 kΩ receiver termination. | Use Scenario: Protecting 28 Gbps PCIe Gen5 test fixture inputs from operator ESD during probe insertion and cable mating. IC Role / Device Role / Timing Role: Low-capacitance shunt element on differential pair near SMA connector. Use Value: 4 pF CT avoids measurable eye diagram closure; RoHS-compliant finish meets lab equipment environmental requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ150A | 6.5 pF capacitance, 1500 W PPP, DO-214AB package | Higher capacitance limits RF use; higher power suits industrial power rail protection | Select when surge energy exceeds 150 W and board space allows SMD footprint |
| 1N6337 | 5.0 pF capacitance, 150 W PPP, axial-leaded glass, non-RoHS | Same mechanical form factor but lacks e3 RoHS compliance and Category 1 bond | Choose only for legacy repair where RoHS and radiation hardness are not required |
Compared with SMCJ150A and 1N6337, the 1N8181USE3/TR uniquely combines 4 pF capacitance, RoHS compliance, and Category 1 metallurgical bonding in an axial-leaded package-making it the sole option for new high-reliability RF and aerospace designs requiring all three attributes.
Availability
1N8181USE3/TR is available at Aetrix Electronics and suitable for radar front-ends, satellite telemetry links, and aerospace avionics data buses requiring stable component supply across extended product lifecycles.
Supply support for 1N8181USE3/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components.
The 1N8181USE3/TR belongs to Microsemi's legacy TVS family engineered for mission-critical ESD/EFT protection in defense, aerospace, and telecom infrastructure where failure is not an option.
FAQ
What is the clamping voltage of the 1N8181USE3/TR at its rated peak impulse current?
The 1N8181USE3/TR has a maximum clamping voltage (VC) of 261 V at 11.7 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is measured per Microsemi T4-LDS-xxxx specification and defines the upper voltage limit imposed on protected circuits during transient events. The 1N8181USE3/TR maintains this clamping performance across its full operating temperature range.
Does the 1N8181USE3/TR meet IEC61000-4-2 ESD immunity requirements?
Yes, the 1N8181USE3/TR provides ESD protection compliant with IEC61000-4-2 up to ±15 kV (air discharge) and ±8 kV (contact discharge). This capability is enabled by its low-clamping-voltage architecture and hermetic glass construction. The 1N8181USE3/TR is validated for direct integration into certified end-equipment without additional external ESD filters.
What is the meaning of "USE3" in the 1N8181USE3/TR part number?
The "USE3" suffix in 1N8181USE3/TR indicates RoHS-compliant matte tin plating (per JEDEC J-STD-609A Class 3) and commercial-grade reliability level. The "TR" denotes tape-and-reel packaging per EIA-296 standard. This distinguishes the 1N8181USE3/TR from non-RoHS variants like 1N8181U and ensures compatibility with lead-free assembly processes.
Can the 1N8181USE3/TR be used in bidirectional protection configurations?
The 1N8181USE3/TR is unidirectional, but bidirectional protection can be implemented using two devices in anti-parallel configuration as shown in Microsemi Figure 5. This arrangement doubles total capacitance to 8 pF while preserving low-clamping performance. The 1N8181USE3/TR itself does not support intrinsic bidirectional operation.
What is the thermal resistance junction-to-ambient for the 1N8181USE3/TR?
The 1N8181USE3/TR has a thermal resistance junction-to-ambient (RθJA) of 150 °C/W under standard PCB mounting conditions. This value assumes adequate copper pour and thermal relief design. For sustained surge duty cycles, derating per Figure 3 in the Microsemi datasheet is required to maintain junction temperature below +175 °C. The 1N8181USE3/TR's hard-glass package contributes to this thermal performance.
1N8181USE3/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 150V
- Voltage - Breakdown (Min):
- 171V
- Voltage - Clamping (Max) @ Ipp:
- 261V
- Current - Peak Pulse (10/1000µs):
- 570mA
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8181USE3/TR FAQ
1.How can I place an order for 1N8181USE3/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8181USE3/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8181USE3/TR reliable?
The price and inventory of 1N8181USE3/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8181USE3/TR is usually 5 days.
3.What payment methods are accepted for 1N8181USE3/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8181USE3/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8181USE3/TR?
1N8181USE3/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8181USE3/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8181USE3/TR?
For technical support, including 1N8181USE3/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8181USE3/TR requirements.
6.How does Aetrix verify that 1N8181USE3/TR is sourced from the original manufacturer or authorized distributors?
All 1N8181USE3/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8181USE3/TR meets industry standards.
7.What is the process for return or replacement of 1N8181USE3/TR?
All 1N8181USE3/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8181USE3/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8181USE3/TR part is unused and in its original packaging.
Return procedure for 1N8181USE3/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8181USE3/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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