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Microchip Technology 1N8182USE3/TR
- Part No.:
- 1N8182USE3/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8182USE3/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:6,256
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Product details
Overview
1N8182USE3/TR from Microsemi is a voidless-hermetically-sealed unidirectional Transient Voltage Suppressor (TVS) designed for high-reliability, high-frequency transient protection. It delivers 150 W peak pulse power at 10/1000 µs, features 4 pF capacitance, and supports a 170 V working standoff voltage (VWM), making it suitable for ESD/EFT protection in aerospace-grade signal lines and MIL-STD-750-compliant systems.
For engineers reviewing the 1N8182USE3/TR datasheet, 1N8182USE3/TR pinout, 1N8182USE3/TR application, or 1N8182USE3/TR equivalent, key selection criteria include low-capacitance clamping performance, Category 1 metallurgical bond reliability, RoHS-compliant axial-leaded packaging, and IEC61000-4-2/4-4/4-5 compliance for secondary lightning and surge immunity.
Technical Context
This TVS uses a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve ultra-low 4 pF capacitance while maintaining unidirectional operation. Its hard-glass hermetic package enables operation from −55 °C to +175 °C with 150 W peak pulse power rating and 0.01% impulse repetition duty factor.
The device exhibits 294 V maximum clamping voltage (VC) at 300 A peak impulse current (IPP), with 0.108 %/°C breakdown voltage temperature coefficient and 0.5 µA standby current at 170 V VWM. Its internal tungsten slug construction and Category 1 metallurgical bond ensure radiation hardness per MicroNote 050 and robustness against mechanical stress.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Pulse Power (PPP) | 150 W at 10/1000 µs - sustains high-energy transients without degradation in telecom or avionics interfaces. |
| Capacitance (CT) | 4 pF at 0 V - preserves signal integrity in >1 GHz RF front-ends and high-speed data lines. |
| Working Standoff Voltage (VWM) | 170 V - blocks normal operating voltages up to 170 V DC while remaining inactive until transient exceeds breakdown. |
| Clamping Voltage (VC) | 294 V at 300 A IPP - limits downstream voltage stress to safe levels during IEC61000-4-5 Level 3 surges. |
| Breakdown Voltage (V(BR)) | 190 V min at 1 mA - ensures precise, repeatable turn-on threshold for predictable protection timing. |
| Junction Temperature Range | −55 °C to +175 °C - supports deployment in engine control units, downhole tools, and space-qualified electronics. |
| Leakage Current (ID) | 0.5 µA max at 170 V - minimizes standby power loss and avoids false triggering in high-impedance sensor circuits. |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink (reverse-biased path) | Connected to protected line; conducts only during overvoltage events above V(BR). |
| Cathode | Reference terminal (marked with band) | Connected to system ground or lower-potential rail; defines polarity and clamping reference point. |
Key Features
| Feature | Design Value |
|---|---|
| Category 1 metallurgical bond | Enables qualification for JANS/JANTXV-level reliability in mission-critical defense and space applications. |
| Triple-layer passivation | Prevents moisture ingress and surface leakage under high-humidity or condensing environments. |
| Voidless hermetic seal | Eliminates internal delamination risk during thermal cycling, ensuring long-term parameter stability. |
| Nonsensitive to ESD (MIL-STD-750 Method 1020) | Withstands handling without pre-failure, simplifying assembly in Class 0 ESD-sensitive production lines. |
| Inherent radiation hardness | Validated per Microsemi MicroNote 050 - no derating required for total ionizing dose up to 100 krad(Si). |
Applications
| Aerospace Data Bus Protection | Military Radar Front-End |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B differential receivers from induced lightning transients on aircraft wiring harnesses. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed across receiver inputs to clamp common-mode surges before signal conditioning stages. Use Value: 4 pF capacitance prevents signal distortion at 1 MHz data rates; 294 V VC limits bus voltage excursion within receiver absolute maximum ratings. |
Use Scenario: Shielding GaN-based L-band transmit/receive modules from coupled RF energy and EMP-induced spikes. IC Role / Device Role / Timing Role: Fast-response transient suppressor mounted directly at antenna interface to shunt nanosecond-scale ESD events. Use Value: 150 W PPP rating handles multi-kA fast-rising pulses; −55 °C to +175 °C range matches module thermal envelope. |
| Downhole Oilfield Instrumentation | Satellite Telemetry Interface |
Use Scenario: Safeguarding pressure/temperature sensor outputs in subterranean drill string telemetry systems exposed to electrochemical corrosion and thermal shock. IC Role / Device Role / Timing Role: Primary overvoltage protector on analog 4–20 mA loop outputs subjected to cable discharge events. Use Value: Hermetic glass package resists H₂S and saline vapor; 0.5 µA ID avoids loading high-impedance sensor bridges. |
Use Scenario: Securing S-band command uplink receivers against single-event transients during orbital radiation exposure. IC Role / Device Role / Timing Role: Radiation-hardened TVS on RF input path to prevent latch-up or gate oxide rupture in LNA front-end. Use Value: Inherent radiation tolerance eliminates need for shielding mass; 170 V VWM accommodates supply rail headroom margins. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ170A | Surface-mount DO-214AB package; 170 V VWM; 400 W PPP; 15 pF capacitance. | Higher capacitance limits use in >500 MHz RF paths; better suited for PCB-level board-level surge suppression than coaxial feedthroughs. | Select when automated SMT assembly is required and RF bandwidth < 300 MHz; avoid where 4 pF is mandatory. |
| 1N6331 | Axial-leaded, 170 V VWM, 150 W PPP, but 12 pF capacitance and non-hermetic epoxy package. | Lacks Category 1 bond and radiation hardness; not qualified for space or nuclear environments. | Acceptable for commercial industrial controls where cost is critical and radiation/long-life requirements are absent. |
Compared with SMCJ170A and 1N6331, the 1N8182USE3/TR uniquely combines hermetic sealing, 4 pF capacitance, and Category 1 reliability-making it irreplaceable in RF-intensive, high-reliability deployments where parameter drift or latent failure is unacceptable.
Availability
1N8182USE3/TR is available at Aetrix Electronics and suitable for aerospace data bus protection, military radar front-end hardening, and downhole oilfield instrumentation requiring stable component supply across extended product lifecycles.
Supply support for 1N8182USE3/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, hermetic, and high-temperature solutions.
The 1N8182USE3/TR belongs to Microsemi's legacy "LDS" series of low-capacitance TVS diodes, engineered specifically for ESD/EFT/IEC61000-4-5 protection in systems where failure is not an option-especially in avionics, satellite subsystems, and nuclear instrumentation.
FAQ
What is the clamping voltage of the 1N8182USE3/TR at its rated peak impulse current?
The 1N8182USE3/TR has a maximum clamping voltage (VC) of 294 V when subjected to its rated 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is measured at 25 °C ambient and ensures downstream circuitry remains within safe voltage limits during transient events. The 1N8182USE3/TR maintains this clamping performance across its full operating temperature range due to its stable avalanche characteristics and hermetic construction.
Is the 1N8182USE3/TR suitable for bidirectional transient protection?
No-the 1N8182USE3/TR is strictly unidirectional. For bidirectional protection, Microsemi recommends using two 1N8182USE3/TR devices in anti-parallel configuration, as shown in Figure 5 of the datasheet. This arrangement doubles the effective capacitance to 8 pF but retains the same VWM and clamping performance in both polarities. The 1N8182USE3/TR itself does not support reverse conduction beyond its specified leakage current.
Does the 1N8182USE3/TR meet IEC61000-4-5 Level 3 surge requirements?
Yes-the 1N8182USE3/TR is validated for secondary lightning protection per select levels of IEC61000-4-5, including Level 3 (1 kV line-to-earth, 2 kV line-to-line). Its 294 V clamping voltage at 300 A IPP and 150 W peak pulse power rating enable reliable suppression of 10/1000 µs surges typical of this standard. System-level compliance requires proper PCB layout and grounding, but the 1N8182USE3/TR provides the core clamping capability needed.
What is the meaning of the "USE3/TR" suffix in 1N8182USE3/TR?
The "USE3" denotes RoHS-compliant matte tin plating (per JEDEC J-STD-609) and "TR" indicates tape-and-reel packaging per EIA-296 standards. The "U" also signifies the axial-leaded "A" package variant (as opposed to MELF), and "S" confirms surface-mount compatibility of the lead finish-not that the device itself is SMD. The 1N8182USE3/TR is an axial-leaded through-hole component supplied in reel format for automated insertion.
How does the 1N8182USE3/TR achieve its 4 pF capacitance?
The 1N8182USE3/TR achieves 4 pF total capacitance via a patented internal architecture: a low-capacitance TVS junction is series-connected with a rectifier diode oriented in opposite polarity. This configuration cancels parasitic capacitance contributions while preserving unidirectional clamping behavior. Unlike conventional TVS diodes, this dual-junction design is intrinsic to the die structure-not achieved by external circuitry-and is verified across all 1N8149–1N8182 variants.
1N8182USE3/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 170V
- Voltage - Breakdown (Min):
- 190V
- Voltage - Clamping (Max) @ Ipp:
- 294V
- Current - Peak Pulse (10/1000µs):
- 510mA
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8182USE3/TR FAQ
1.How can I place an order for 1N8182USE3/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8182USE3/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8182USE3/TR reliable?
The price and inventory of 1N8182USE3/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8182USE3/TR is usually 5 days.
3.What payment methods are accepted for 1N8182USE3/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8182USE3/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8182USE3/TR?
1N8182USE3/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8182USE3/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8182USE3/TR?
For technical support, including 1N8182USE3/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8182USE3/TR requirements.
6.How does Aetrix verify that 1N8182USE3/TR is sourced from the original manufacturer or authorized distributors?
All 1N8182USE3/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8182USE3/TR meets industry standards.
7.What is the process for return or replacement of 1N8182USE3/TR?
All 1N8182USE3/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8182USE3/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8182USE3/TR part is unused and in its original packaging.
Return procedure for 1N8182USE3/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8182USE3/TR Tags
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ESD9B5.0ST5G
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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