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onsemi 1PMT12AT1
- Part No.:
- 1PMT12AT1
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- DO-216AA
- Datasheet:
-
1PMT12AT1.pdf
- Description:
- TVS DIODE 12VWM 19.9VC POWERMITE
- Quantity:
- Payment:
- Shipping:
Inventory:9,084
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Product details
Overview
1PMT12AT1 from onsemi is a unidirectional Zener transient voltage suppressor (TVS) in the POWERMITE® package, designed for clamping ESD and surge transients in low-voltage DC circuits. It features a 12 V working peak reverse voltage (VRWM), 19.9 V maximum clamping voltage at 10.1 A peak pulse current, 200 W peak power rating (10/1000 µs), <1 ns response time, and 1.1 mm profile - ideal for space-constrained portable power rails and I/O protection.
For engineers reviewing the 1PMT12AT1 datasheet, pinout, applications, or equivalent options, key selection criteria include VRWM matching system operating voltage, clamping voltage margin relative to IC absolute maximum ratings, thermal performance under repeated surge duty, and compatibility with automated SMT assembly due to its DO−216AA-compliant POWERMITE footprint.
Technical Context
The 1PMT12AT1 operates as a unidirectional Zener TVS diode, leveraging avalanche breakdown to clamp transient overvoltages above its 12 V stand-off threshold. Its low 3.2 °C/W junction-to-cathode thermal resistance enables effective heat dissipation through the cathode tab during high-energy pulses.
It delivers 200 W peak pulse power per 10/1000 µs waveform (for devices ≤36 V VRWM), with clamping validated at 19.9 V @ 10.1 A IPP, and maintains <1 µA leakage at VRWM - ensuring minimal standby power impact in battery-powered systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 12 V - Maximum continuous reverse operating voltage before clamping begins; must exceed circuit's nominal DC rail. |
| VBR @ IT=1.0 mA | 13.3–14.7 V - Breakdown voltage range; defines onset of avalanche conduction under controlled test conditions. |
| VC @ IPP=10.1 A | 19.9 V - Maximum clamped voltage during 10/1000 µs surge; determines worst-case stress on downstream ICs. |
| IPP | 10.1 A - Peak pulse current supported at rated clamping voltage; used to size upstream fusing or current-limiting impedance. |
| Leakage @ VRWM | ≤1.0 µA - Ultra-low reverse leakage preserves battery life and avoids false triggering in high-impedance sensing nodes. |
| Response Time | <1 ns - Enables suppression of fast ESD events (IEC 61000-4-2) before sensitive logic is damaged. |
| ESD Rating | Class 3 (>16 kV HBM) - Meets industrial-grade electrostatic discharge immunity requirements without external shielding. |
| Package | POWERMITE® (DO−216AA) - 8.45 mm² footprint, 1.1 mm max height, full metallic cathode tab for thermal and mechanical anchoring. |
Pinout & Package
1PMT12AT1 uses the POWERMITE® surface-mount package (JEDEC DO−216AA, Case 457), featuring a compact 2-pin layout with integral heatsink tabs and full metallic cathode bottom for enhanced thermal transfer and solder joint reliability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Connected to system ground or low-impedance return path; serves as primary thermal interface via exposed metal tab. |
| 2 | Anode | Connected to protected line (e.g., USB VBUS, GPIO, or DC input); polarity band on package marks this terminal. |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile POWERMITE® package | 1.1 mm max height and 8.45 mm² footprint - enables placement in tight spaces like smartphone edge connectors and wearable PCBs. |
| Integral cathode heatsink tabs | Reduces RθJC to 3.2 °C/W - allows sustained surge handling without board-level copper pour expansion. |
| Full metallic cathode bottom | Eliminates flux entrapment and improves solder wetting - increases first-pass yield in reflow processes. |
| Pb-free and RoHS-compliant | Meets global environmental regulations and supports lead-free reflow profiles up to 260°C for 10 seconds. |
| JEDEC DO−216AA registration | Ensures mechanical interchangeability and standardized land pattern design across qualified suppliers. |
Applications
| USB Power Input Protection | Smartphone Battery Charging Circuit |
|---|---|
Use Scenario: Protecting USB Type-C VBUS line against hot-plug surges and adapter transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between VBUS and GND, clamping transients before they reach USB controller or PMIC. Use Value: 19.9 V clamping ensures safe operation below 20 V absolute maximum rating of common USB PD controllers. | Use Scenario: Safeguarding lithium-ion battery charge path from adapter-induced spikes during AC/DC conversion. IC Role / Device Role / Timing Role: Standoff-rated TVS on charger IC input, activated only during overvoltage events exceeding 12 V. Use Value: <1 µA leakage prevents parasitic drain on battery during storage; 200 W surge rating handles 10/1000 µs adapter turn-on spikes. |
| Industrial Sensor I/O Protection | POS Terminal Keypad Interface |
Use Scenario: Shielding 12 V analog sensor supply lines from inductive switching noise in factory automation. IC Role / Device Role / Timing Role: Low-leakage TVS on 12 V sensor rail, absorbing repetitive 100 V/1 A transients from solenoid drivers. Use Value: 12 V VRWM matches standard industrial sensor supply; 19.9 V clamping protects 24 V-tolerant ADC inputs without crowbar action. | Use Scenario: ESD protection for membrane keypad scan lines in retail point-of-sale terminals. IC Role / Device Role / Timing Role: Fast-response TVS on each row/column trace, shunting >15 kV HBM discharges to ground. Use Value: <1 ns response time prevents latch-up in microcontroller GPIOs; 1.1 mm height avoids interference with keypad overlay thickness. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ12A | Same VRWM (12 V) and clamping (20.1 V @ 10.3 A), but SMA package (2.5 mm height, 2× larger footprint) | Requires more PCB area and offers higher thermal resistance (RθJA ≈ 100 °C/W vs. 248 °C/W for 1PMT12AT1) | Select when legacy SMA land patterns exist or when higher surge repetition rate demands larger thermal mass. |
| 1.5SMC12A | Higher peak power (1500 W @ 10/1000 µs), but 3.5 mm height and 12.5 mm² footprint - incompatible with ultra-thin designs | Used in AC mains input stages or high-energy industrial controls where 1PMT12AT1's 200 W rating is insufficient | Choose only if system-level surge testing exceeds IEC 61000-4-5 Level 4 (4 kV line-earth); not suitable for portable device thinness constraints. |
Compared with SMAJ12A and 1.5SMC12A, the 1PMT12AT1 provides identical 12 V standoff and sub-20 V clamping performance in a footprint 50% smaller than SMA and half the height of SMC - making it optimal for next-generation compact, battery-powered electronics where board space and profile are critical.
Availability
1PMT12AT1 is available at Aetrix Electronics and suitable for USB power input protection, smartphone battery charging circuits, and industrial sensor I/O requiring stable component supply across high-mix production runs and long-lifecycle embedded programs.
Supply support for 1PMT12AT1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The 1PMT12AT1 belongs to onsemi's POWERMITE® TVS diode family, engineered specifically to replace larger SMT packages in space- and height-constrained applications while maintaining robust 200 W surge capability and Class 3 ESD immunity.
FAQ
What is the exact working peak reverse voltage (VRWM) specification for the 1PMT12AT1?
The 1PMT12AT1 has a guaranteed working peak reverse voltage (VRWM) of 12 V, meaning it remains non-conductive up to this DC or continuous peak voltage level. This value is confirmed in the Electrical Characteristics table on page 3 of the official datasheet (1PMT5.0AT3/D), where VRWM is explicitly listed as 12 V for the 1PMT12AT1G/T3G variant. The 1PMT12AT1 is rated for use in 12 V nominal systems such as automotive body electronics or industrial control power rails.
Does the 1PMT12AT1 meet industry-standard ESD immunity requirements?
Yes, the 1PMT12AT1 is rated for Class 3 ESD immunity (>16 kV) per the Human Body Model (HBM), as stated in the Specification Features section of the datasheet. This makes it suitable for protecting interfaces exposed to frequent handling, such as USB ports, keypad traces, and sensor connections in consumer and industrial equipment. The 1PMT12AT1 achieves this performance without external components, relying on its intrinsic Zener avalanche structure and low-capacitance design.
What is the thermal resistance from junction to cathode tab for the 1PMT12AT1?
The 1PMT12AT1 has a junction-to-cathode thermal resistance (RJcathode) of 3.2 °C/W, as specified in the Maximum Ratings table on page 2 of the datasheet. This low value is enabled by the full metallic cathode bottom and integral heatsink tabs in the POWERMITE® package. For thermal design, this means that at 200 W peak pulse power, the junction temperature rise above cathode temperature is only ~640°C - but since the pulse duration is short (1 ms), actual temperature rise remains within safe limits when mounted on appropriate PCB copper.
Can the 1PMT12AT1 be used in bidirectional signal line protection?
No, the 1PMT12AT1 is a unidirectional TVS diode and is not suitable for bidirectional signal line protection such as RS-485 or CAN bus. Its electrical characteristics - including polarity marking, cathode/anode pinout, and asymmetric IV curve - are optimized for clamping positive transients on grounded-return lines. For bidirectional applications, a dedicated bidirectional TVS like the SMBJ12CA or equivalent must be selected instead of the 1PMT12AT1.
What is the maximum allowable soldering temperature for the 1PMT12AT1 during reflow?
The 1PMT12AT1 supports lead-free reflow soldering at a maximum case temperature of 260°C for 10 seconds, as specified in the Mechanical Characteristics section. This aligns with IPC/JEDEC J-STD-020 moisture sensitivity level (MSL) requirements for Pb-free assembly. The device is rated MSL 1, meaning it can be stored indefinitely at ambient conditions without baking prior to soldering - a key advantage for high-reliability manufacturing of the 1PMT12AT1.
1PMT12AT1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- DO-216AA
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 12V
- Voltage - Breakdown (Min):
- 13.3V
- Voltage - Clamping (Max) @ Ipp:
- 19.9V
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- 1000W (1kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Powermite
1PMT12AT1 FAQ
1.How can I place an order for 1PMT12AT1 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1PMT12AT1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1PMT12AT1 reliable?
The price and inventory of 1PMT12AT1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1PMT12AT1 is usually 5 days.
3.What payment methods are accepted for 1PMT12AT1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1PMT12AT1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1PMT12AT1?
1PMT12AT1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1PMT12AT1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1PMT12AT1?
For technical support, including 1PMT12AT1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1PMT12AT1 requirements.
6.How does Aetrix verify that 1PMT12AT1 is sourced from the original manufacturer or authorized distributors?
All 1PMT12AT1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1PMT12AT1 meets industry standards.
7.What is the process for return or replacement of 1PMT12AT1?
All 1PMT12AT1 units undergo pre-shipment inspection (PSI). If there is an issue with 1PMT12AT1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1PMT12AT1 part is unused and in its original packaging.
Return procedure for 1PMT12AT1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1PMT12AT1 Tags
-
ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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