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onsemi 1PMT12AT3
- Part No.:
- 1PMT12AT3
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- DO-216AA
- Datasheet:
-
1PMT12AT3.pdf
- Description:
- TVS DIODE 12VWM 19.9VC POWERMITE
- Quantity:
- Payment:
- Shipping:
Inventory:8,419
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Product details
Overview
1PMT12AT3 from onsemi is a unidirectional Zener transient voltage suppressor (TVS) in POWERMITE® (DO-216AA) package, designed for overvoltage protection of sensitive electronics. It features a 12 V working peak reverse voltage (VRWM), 19.9 V maximum clamping voltage at 10.1 A peak pulse current, 200 W peak pulse power (10/1000 µs), <1 ns response time, and 1.1 mm max height. It is used in DC power rails of portable devices, power supplies, and industrial control interfaces.
For engineers reviewing the 1PMT12AT3 datasheet, pinout, applications, or equivalent options, key selection criteria include clamping performance at 10.1 A IPP, thermal resistance to cathode (3.2 °C/W), low-profile mounting compatibility, and Pb-free RoHS-compliant packaging for high-density SMT layouts.
Technical Context
The 1PMT12AT3 operates as a unidirectional Zener TVS diode, conducting only during reverse overvoltage events above its breakdown threshold (13.3–14.7 V at 1.0 mA). Its clamping action limits transient energy to ≤19.9 V while sustaining 10.1 A peak pulse current under standardized 10/1000 µs waveform conditions.
Thermally, it leverages an integral heatsink with full metallic cathode tab (RJcathode = 3.2 °C/W) and low-profile POWERMITE package (8.45 mm² footprint, 1.1 mm height), enabling efficient heat transfer without requiring external heatsinking in typical 25°C ambient applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Peak Reverse Voltage (VRWM) | 12 V - sets minimum operating voltage threshold before clamping activation |
| Breakdown Voltage (VBR) @ IT = 1.0 mA | 13.3–14.7 V - defines precise conduction onset under DC test conditions |
| Clamping Voltage (VC) @ IPP = 10.1 A | 19.9 V - maximum voltage seen by protected circuit during 10/1000 µs surge |
| Peak Pulse Power (Ppk) @ 10/1000 µs | 200 W - determines transient energy absorption capability per pulse |
| Response Time | <1 ns - ensures protection before sensitive ICs experience overstress |
| ESD Rating (HBM) | >16 kV - qualifies for robust electrostatic discharge immunity in handling and operation |
| Thermal Resistance (Junction-to-Cathode Tab) | 3.2 °C/W - enables high-power dissipation with minimal temperature rise when mounted to PCB copper |
Pinout & Package
1PMT12AT3 uses the POWERMITE® (DO-216AA) surface-mount package: 2-pin, cathode-anode configuration, 1.1 mm max height, 8.45 mm² footprint, JEDEC-registered, with full metallic cathode tab for thermal and mechanical anchoring. Cathode identified by polarity band; lead orientation places cathode (short lead) toward sprocket holes in tape.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Connected to protected circuit's ground or return path; serves as primary thermal interface via metallic tab |
| 2 | Anode | Connected to line/voltage rail being protected; carries transient current into cathode during clamping |
Key Features
| Feature | Design Value |
|---|---|
| Integral heatsink with full metallic cathode tab | Enables 3.2 °C/W junction-to-tab thermal resistance for reliable 200 W pulse handling without external heatsink |
| Low-profile POWERMITE® package | 1.1 mm max height and 8.45 mm² footprint allows placement in space-constrained portable designs |
| JEDEC DO-216AA registration | Ensures standardized footprint, soldering profile, and mechanical interoperability across assembly lines |
| Pb-free and RoHS-compliant construction | Meets global environmental compliance requirements without compromising surge performance or reliability |
| ESD Class 3 HBM rating (>16 kV) | Provides built-in ESD hardening for front-end I/O protection without additional discrete components |
Applications
| USB Power Input Protection | DC-DC Converter Feedback Path |
|---|---|
Use Scenario: Protects USB 5 V input rails in smartphones and tablets against ESD and load-dump transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between VBUS and GND to clamp surges before reaching PMIC or charging controller. Use Value: 19.9 V clamping ensures downstream 5 V logic remains within safe operating margin during 10.1 A transients. |
Use Scenario: Shields feedback resistor divider network of buck converters from coupling-induced voltage spikes. IC Role / Device Role / Timing Role: Low-capacitance TVS connected across FB pin and GND to prevent false regulation or latch-up. Use Value: Sub-1 ns response prevents transient propagation into error amplifier input, maintaining output stability. |
| Industrial Sensor Signal Conditioning | AC-DC Adapter Output Rail |
Use Scenario: Guards analog sensor outputs (e.g., 4–20 mA loop transmitters) against field-induced surges in factory automation. IC Role / Device Role / Timing Role: TVS placed at signal output terminal to absorb induced common-mode transients before conditioning op-amps. Use Value: 200 W peak power rating sustains repeated 10/1000 µs surges without degradation in harsh EMC environments. |
Use Scenario: Suppresses switching noise and line transients on 12 V output of wall adapters powering IoT gateways. IC Role / Device Role / Timing Role: Clamps overshoot during load step changes and external surge events on regulated DC output. Use Value: 12 V VRWM matches nominal output, while 19.9 V VC ensures connected MCU I/O stays below absolute maximum ratings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ12A | Same VRWM (12 V), higher clamping voltage (20.9 V @ 10.3 A), SMA package (2.5 mm height, 2× larger footprint) | Less suitable for ultra-thin portable designs due to height and footprint; better for legacy board layouts with SMA pads | Select SMAJ12A only if existing PCB uses SMA footprints and thermal budget permits higher VC |
| 1.5SMC12A | Higher peak power (1500 W @ 10/1000 µs), DO-214AB package (3.5 mm height, 10.5 mm² footprint), same VRWM | Over-specified for low-energy transients; requires more board area and may introduce parasitic inductance in high-speed paths | Choose 1.5SMC12A only when protecting against high-energy surges exceeding 200 W, such as AC mains-coupled events |
Compared with SMAJ12A and 1.5SMC12A, the 1PMT12AT3 delivers identical 12 V standoff with tighter clamping (19.9 V), superior thermal performance (3.2 °C/W vs. ~50 °C/W for SMA), and half the footprint-making it optimal for modern compact, thermally demanding DC power protection.
Availability
1PMT12AT3 is available at Aetrix Electronics and suitable for USB power input protection, DC-DC converter feedback path safeguarding, and industrial sensor signal conditioning requiring stable component supply and long-term manufacturability.
Supply support for 1PMT12AT3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The 1PMT12AT3 belongs to the 1PMT5.0AT1G/T3G Series of unidirectional Zener TVS diodes, engineered specifically for space-constrained, high-reliability overvoltage protection in battery-powered and portable electronics.
FAQ
What is the clamping voltage of the 1PMT12AT3 at its rated peak pulse current?
The 1PMT12AT3 has a maximum clamping voltage (VC) of 19.9 V when subjected to its rated peak pulse current of 10.1 A under the standard 10/1000 µs waveform. This value is measured at TJ = 25°C and guarantees that protected circuits will not experience voltages exceeding 19.9 V during transient events, preserving downstream IC integrity. The 1PMT12AT3 achieves this with low Zener impedance and fast junction response.
Is the 1PMT12AT3 compatible with lead-free reflow soldering processes?
Yes, the 1PMT12AT3 is Pb-free and RoHS-compliant, qualified for lead-free reflow soldering at up to 260°C for 10 seconds. Its POWERMITE® package uses corrosion-resistant, readily solderable terminations and void-free molded plastic, ensuring reliable wetting and joint integrity under IPC/JEDEC J-STD-020 conditions. The 1PMT12AT3 also avoids flux entrapment thanks to its full metallic bottom design.
How does the thermal performance of the 1PMT12AT3 compare to traditional SMA-packaged TVS diodes?
The 1PMT12AT3 delivers significantly better thermal performance than SMA-packaged equivalents: its junction-to-cathode thermal resistance is 3.2 °C/W versus ~50 °C/W for standard SMA devices. This is achieved via an integral metallic cathode tab that directly transfers heat to PCB copper. As a result, the 1PMT12AT3 sustains 200 W pulses with lower junction temperature rise, enabling higher reliability in thermally dense layouts where the 1PMT12AT3 is deployed.
Can the 1PMT12AT3 be used in bidirectional protection configurations?
No, the 1PMT12AT3 is a unidirectional Zener TVS diode and is not rated for bidirectional operation. It conducts only during reverse-biased overvoltage events and blocks forward current like a standard diode. For bidirectional protection (e.g., AC signal lines), a dedicated bidirectional TVS such as SMBJ12CA must be used. Using two 1PMT12AT3 devices in series opposition is not recommended due to mismatched VBR and undefined forward conduction behavior.
What is the ESD withstand level of the 1PMT12AT3, and how is it verified?
The 1PMT12AT3 is rated for >16 kV per Human Body Model (HBM), classified as ESD Class 3. This rating is verified per ANSI/ESDA/JEDEC JS-001 using standardized 100 pF/1.5 kΩ discharge networks. The robust Zener junction structure and optimized metallization enable repeatable ESD survival without parameter shift, making the 1PMT12AT3 suitable for direct I/O protection in handheld devices where user contact is frequent.
1PMT12AT3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- DO-216AA
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 12V
- Voltage - Breakdown (Min):
- 13.3V
- Voltage - Clamping (Max) @ Ipp:
- 19.9V
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- 1000W (1kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Powermite
1PMT12AT3 FAQ
1.How can I place an order for 1PMT12AT3 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1PMT12AT3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1PMT12AT3 reliable?
The price and inventory of 1PMT12AT3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1PMT12AT3 is usually 5 days.
3.What payment methods are accepted for 1PMT12AT3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1PMT12AT3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1PMT12AT3?
1PMT12AT3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1PMT12AT3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1PMT12AT3?
For technical support, including 1PMT12AT3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1PMT12AT3 requirements.
6.How does Aetrix verify that 1PMT12AT3 is sourced from the original manufacturer or authorized distributors?
All 1PMT12AT3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1PMT12AT3 meets industry standards.
7.What is the process for return or replacement of 1PMT12AT3?
All 1PMT12AT3 units undergo pre-shipment inspection (PSI). If there is an issue with 1PMT12AT3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1PMT12AT3 part is unused and in its original packaging.
Return procedure for 1PMT12AT3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1PMT12AT3 Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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