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onsemi 1PMT18AT1
- Part No.:
- 1PMT18AT1
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- DO-216AA
- Datasheet:
-
1PMT18AT1.pdf
- Description:
- TVS DIODE 18VWM 29.2VC POWERMITE
- Quantity:
- Payment:
- Shipping:
Inventory:8,097
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Product details
Overview
1PMT18AT1 from onsemi is a unidirectional Zener transient voltage suppressor (TVS) in POWERMITE® (DO-216AA) package, designed for clamping ESD and surge transients in low-voltage DC lines. It features 18 V working peak reverse voltage (VRWM), 29.2 V maximum clamping voltage at 6.8 A peak pulse current, 200 W peak power rating (10/1000 µs), <1 ns response time, and 1.1 mm max height - ideal for space-constrained portable electronics power rails.
For engineers reviewing the 1PMT18AT1 datasheet, pinout, applications, or equivalent options, key selection criteria include VRWM matching system operating voltage, clamping voltage margin relative to IC absolute maximum ratings, thermal performance under repeated surge duty cycles, and PCB footprint compatibility with ultra-low-profile surface-mount layouts.
Technical Context
This device operates as a unidirectional Zener-based TVS diode, leveraging avalanche breakdown to clamp transient overvoltages above its VRWM of 18 V. Its clamping action begins at breakdown voltage (VBR = 20.0–22.1 V @ 1 mA), with low dynamic impedance ensuring stable voltage limiting during fast transients.
The POWERMITE package integrates a full metallic cathode tab for direct thermal coupling to PCB copper, achieving 3.2 °C/W junction-to-cathode thermal resistance. This enables sustained energy dissipation without derating at board-level temperatures up to +75 °C at the tab.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 18 V - must be ≥ nominal DC supply voltage to avoid leakage conduction during normal operation |
| VBR @ IT=1 mA | 20.0–22.1 V - defines onset of clamping; ensures reliable turn-on before downstream IC damage thresholds |
| VC @ IPP=6.8 A | 29.2 V - maximum voltage seen by protected circuit during 10/1000 µs surge; determines safe margin vs. 3.3 V/5 V rail tolerance |
| Peak Power (10/1000 µs) | 200 W - supports high-energy ESD (IEC 61000-4-2 ±15 kV) and lightning-induced surges in compact form factor |
| Response Time | <1 ns - enables protection of high-speed interfaces and microcontroller I/O pins against nanosecond-scale transients |
| ESD Rating (HBM) | >16 kV - exceeds Class 3 requirement, suitable for handheld device button/USB port protection |
| Package | POWERMITE® (DO-216AA) - 8.45 mm² footprint, 1.1 mm max height, JEDEC-registered, Pb-free/RoHS compliant |
Pinout & Package
POWERMITE® (Case 457) is a surface-mount, two-terminal Zener TVS diode with integral heatsink tabs and full metallic cathode bottom. Cathode is marked by polarity band; lead orientation in tape places cathode (short lead) toward sprocket holes.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Clamping output node / Anode of internal Zener | Connected to protected line; provides low-impedance path to ground during overvoltage; thermal interface to PCB via full-metal bottom |
| 2 (Anode) | Reference / Ground return | Typically tied to system ground; completes clamping path; thermal resistance junction-to-anode is 35 °C/W |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile POWERMITE package | 1.1 mm max height enables use in ultrathin smartphones and wearables where SMA/SMB are too tall |
| Full metallic cathode tab | Eliminates flux entrapment and delivers 3.2 °C/W thermal resistance - critical for repeated surge reliability |
| JEDEC DO-216AA registration | Ensures standardized footprint, soldering profile, and mechanical interchangeability across qualified suppliers |
| 16 kV HBM ESD rating | Meets IEC 61000-4-2 Level 4 for user-accessible ports without additional external protection stages |
Applications
| Smartphone Power Rail Protection | USB Type-C Port ESD Clamp |
|---|---|
Use Scenario: Protecting 3.3 V or 5 V PMIC outputs and battery charging circuits from cable discharge events and board-level ESD. IC Role / Device Role: Unidirectional clamping TVS placed between rail and ground, absorbing transients before they reach sensitive load switches or LDOs. Use Value: 29.2 V clamping voltage ensures no overvoltage stress on 5 V tolerant ICs; 1.1 mm height avoids interference with stacked FPC connectors. | Use Scenario: Safeguarding USB Type-C CC, VBUS, and SBU lines against human-body-model (HBM) and IEC 61000-4-2 contact discharges. IC Role / Device Role: Low-capacitance (<100 pF at 50% VRWM) unidirectional TVS mounted directly at connector footprint. Use Value: Sub-1 ns response captures fast edge transients; 18 V VRWM allows placement on 12–15 V auxiliary power paths without leakage. |
| Industrial Sensor Node Power Input | POS Terminal Keypad Interface |
Use Scenario: Shielding 12–24 V DC input rails of wireless sensor nodes from induced surges in factory floor wiring harnesses. IC Role / Device Role: Primary surge suppression stage upstream of DC-DC converter, rated for 200 W 10/1000 µs pulses. Use Value: 200 W peak power and 175 W derated capability support EN 61000-4-5 Level 3 (1 kV/2 Ω) immunity testing without failure. | Use Scenario: Guarding membrane keypad matrix lines and microcontroller GPIOs against electrostatic discharge during customer interaction. IC Role / Device Role: Point-of-entry TVS on each key scan line, leveraging low leakage (<1 µA @ 18 V) to prevent false triggering. Use Value: 1.1 mm height fits beneath keypad overlay; 8.45 mm² footprint allows dense placement across 10+ key lines on compact PCB. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ18A | Same VRWM (18 V), but SMA package (2.5 mm height, 29.4 mm² footprint); 400 W peak power (10/1000 µs) | Higher surge capacity but occupies >3× PCB area; less suitable for ultra-thin devices | Select when higher single-pulse robustness is required and board height/area allow SMA footprint |
| 1.5SMC18A | Same VRWM (18 V), SMC package (2.3 mm height, 38.5 mm² footprint); 1500 W peak power (10/1000 µs) | Designed for high-energy industrial surges; excessive size and capacitance for consumer port protection | Prefer for mains-connected equipment or automotive load-dump scenarios where 1.5 kW clamping is mandated |
Compared with SMAJ18A and 1.5SMC18A, the 1PMT18AT1 offers the smallest height and footprint among 18 V unidirectional TVS diodes while maintaining sufficient 200 W surge rating for portable electronics - making it optimal where vertical clearance and board real estate are constrained.
Availability
1PMT18AT1 is available at Aetrix Electronics and suitable for smartphone power rail protection, USB Type-C port ESD clamp, and industrial sensor node power input requiring stable component supply and consistent RoHS-compliant packaging.
Supply support for 1PMT18AT1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The 1PMT18AT1 belongs to the 1PMT5.0AT1G/T3G Series - a family of ultra-compact Zener TVS diodes engineered specifically for space- and height-constrained DC power line protection in portable and wearable electronics.
FAQ
What is the exact working peak reverse voltage (VRWM) specification for the 1PMT18AT1?
The 1PMT18AT1 has a guaranteed working peak reverse voltage (VRWM) of 18 V, meaning it remains in high-impedance blocking mode up to this DC or continuous peak voltage. This value is confirmed in the Electrical Characteristics table on page 3 of the official datasheet (1PMT5.0AT3/D, Rev. 10), where VRWM is explicitly listed as 18 V for the MLT-marked device. The 1PMT18AT1 must be selected only for circuits where the steady-state voltage does not exceed this threshold to prevent premature conduction.
Does the 1PMT18AT1 support bidirectional transient suppression?
No, the 1PMT18AT1 is a unidirectional Zener TVS diode and is not rated for bidirectional operation. Its electrical characteristics - including VRWM, VBR, and VC - are specified only for reverse-biased conditions. Applying significant forward voltage beyond its 1.25 V forward voltage rating (at 200 mA) may cause unintended conduction or thermal stress. For AC or dual-polarity signal lines, a dedicated bidirectional TVS such as the 1PMT18AT3G (if available) or discrete back-to-back configuration is required - the 1PMT18AT1 alone does not provide symmetrical clamping.
What is the thermal resistance from junction to cathode tab for the 1PMT18AT1, and why does it matter?
The 1PMT18AT1 has a junction-to-cathode thermal resistance (RJcathode) of 3.2 °C/W, as specified in the Maximum Ratings table (page 2). This low value results from the full metallic bottom construction of the POWERMITE package, enabling efficient heat transfer from the silicon die directly into the PCB copper pour. It matters because it allows the device to sustain repeated 200 W transients without exceeding 150 °C junction temperature - critical for applications like hot-plug USB ports or industrial sensors exposed to frequent surge events.
Can the 1PMT18AT1 be used in place of an SMAJ18A without PCB layout changes?
No - the 1PMT18AT1 cannot be used as a drop-in replacement for the SMAJ18A without PCB layout changes. Although both have identical VRWM (18 V) and unidirectional functionality, the 1PMT18AT1 uses the POWERMITE (DO-216AA) package with 2.0 mm × 2.0 mm footprint and 1.1 mm height, whereas the SMAJ18A uses the SMA package with 4.5 mm × 2.7 mm footprint and 2.5 mm height. Pad layout, stencil aperture, and keep-out zones differ significantly; direct substitution would result in solder joint voiding or tombstoning.
What is the maximum clamping voltage (VC) of the 1PMT18AT1 under standard test conditions?
The maximum clamping voltage (VC) of the 1PMT18AT1 is 29.2 V, measured at a peak pulse current (IPP) of 6.8 A using the 10/1000 µs waveform per Figure 2 in the datasheet. This value appears in the Electrical Characteristics table (page 3) under the "VC @ IPP" column for the MLT-marked device. It represents the worst-case voltage imposed on the protected circuit during a standardized surge event - a key parameter for verifying margin against downstream IC absolute maximum ratings.
1PMT18AT1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- DO-216AA
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 18V
- Voltage - Breakdown (Min):
- 20V
- Voltage - Clamping (Max) @ Ipp:
- 29.2V
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- 1000W (1kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Powermite
1PMT18AT1 FAQ
1.How can I place an order for 1PMT18AT1 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1PMT18AT1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1PMT18AT1 reliable?
The price and inventory of 1PMT18AT1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1PMT18AT1 is usually 5 days.
3.What payment methods are accepted for 1PMT18AT1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1PMT18AT1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1PMT18AT1?
1PMT18AT1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1PMT18AT1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1PMT18AT1?
For technical support, including 1PMT18AT1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1PMT18AT1 requirements.
6.How does Aetrix verify that 1PMT18AT1 is sourced from the original manufacturer or authorized distributors?
All 1PMT18AT1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1PMT18AT1 meets industry standards.
7.What is the process for return or replacement of 1PMT18AT1?
All 1PMT18AT1 units undergo pre-shipment inspection (PSI). If there is an issue with 1PMT18AT1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1PMT18AT1 part is unused and in its original packaging.
Return procedure for 1PMT18AT1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1PMT18AT1 Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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