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onsemi 1PMT30AT1G
- Part No.:
- 1PMT30AT1G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- DO-216AA
- Datasheet:
-
1PMT30AT1G.pdf
- Description:
- TVS DIODE 30VWM 48.4VC POWERMITE
- Quantity:
- Payment:
- Shipping:
Inventory:3,559
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Product details
Overview
1PMT30AT1G from onsemi is a unidirectional Zener transient voltage suppressor (TVS) in the POWERMITE® package, designed for overvoltage protection of sensitive electronics. It features a 30 V working peak reverse voltage (VRWM), 48.4 A peak pulse current (IPP), 36.8 V maximum clamping voltage (VC), 200 W peak power dissipation at 10/1000 µs, and sub-1 ns response time - ideal for protecting DC power rails in portable power supplies and USB interfaces.
For engineers reviewing the 1PMT30AT1G datasheet, pinout, applications, or equivalent options, key selection criteria include clamping performance under 48.4 A surge, thermal resistance to cathode tab (3.2 °C/W), low-profile 1.1 mm height, JEDEC DO−216AA compliance, and Pb-free RoHS-compliant construction.
Technical Context
The 1PMT30AT1G operates as a unidirectional Zener-based TVS diode, leveraging avalanche breakdown to clamp transients above its 33.3–36.8 V breakdown range. Its clamping action begins within <1 ns, limiting voltage across protected circuitry during ESD or lightning-induced surges.
Thermally optimized via integral heatsink/locking tabs and full metallic cathode tab, it achieves 3.2 °C/W junction-to-tab thermal resistance - enabling high-energy pulse handling (1000 W at 8/20 µs) without PCB-level heatsinking. The POWERMITE package delivers SMA-equivalent thermal performance in 50% smaller footprint (8.45 mm²) and 1.1 mm max height.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 30 V - Maximum continuous reverse operating voltage before clamping initiates |
| VBR @ IT = 1.0 mA | 33.3–36.8 V - Breakdown occurs within this range, ensuring reliable turn-on margin above VRWM |
| VC @ IPP = 48.4 A | 36.8 V - Maximum voltage seen by protected circuit during worst-case 10/1000 µs surge |
| Ppk @ 10/1000 µs | 200 W - Sustains high-energy transients common in industrial I/O and power supply inputs |
| Response Time | <1 ns - Limits voltage overshoot before downstream ICs experience stress |
| ESD Rating (HBM) | >16 kV - Meets Class 3 ESD immunity for handheld and consumer end equipment |
| Package | POWERMITE® (DO−216AA) - JEDEC-registered surface-mount package with 1.1 mm height and 8.45 mm² footprint |
Pinout & Package
1PMT30AT1G uses the POWERMITE® (DO−216AA) package: 2-terminal surface-mount device with cathode (Pin 1) and anode (Pin 2) marked by polarity band; full metallic bottom enables direct thermal coupling to PCB copper pour or heatsink pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Transient current sink / clamping node | Connected to protected line (e.g., VBUS); carries full surge current to ground path; thermally coupled to PCB via metal tab |
| 2 (Anode) | Reference / ground return | Typically tied to system ground; low-inductance connection critical for fast transient response |
Key Features
| Feature | Design Value |
|---|---|
| Integral heatsink/locking tabs | Enables 3.2 °C/W junction-to-cathode thermal resistance - supports 1000 W 8/20 µs surge without external heatsink |
| Full metallic bottom | Eliminates flux entrapment during reflow and provides low-impedance thermal path to PCB copper |
| Low profile (1.1 mm max height) | Enables use in ultra-thin portable devices such as smartphones and wearables where Z-height is constrained |
| JEDEC DO−216AA registration | Ensures mechanical compatibility with standard automated placement equipment and IPC-compliant board layouts |
| Pb-free and RoHS compliant | Meets global environmental regulations and supports lead-free reflow profiles up to 260°C for 10 seconds |
Applications
| USB Power Delivery Interface | Industrial Sensor Signal Conditioning |
|---|---|
Use Scenario: Protecting 5 V/9 V/15 V USB PD bus lines from ESD and load-dump transients in docking stations and chargers. IC Role / Device Role / Timing Role: Unidirectional TVS placed between VBUS and GND to clamp surges before they reach USB controller or power switch ICs. Use Value: 36.8 V clamping ensures safe operation below 40 V absolute maximum ratings of common USB PD controllers while maintaining 30 V DC operating margin. | Use Scenario: Safeguarding analog front-end inputs of 4–20 mA current loop sensors exposed to field wiring transients in factory automation. IC Role / Device Role / Timing Role: Reverse-biased TVS across sensor input terminals to shunt induced surges away from precision op-amps and ADCs. Use Value: Sub-1 ns response prevents >36.8 V excursion from damaging 36 V-rated instrumentation amplifiers; 1.1 mm height avoids interference with stacked PCB assemblies. |
| Portable Medical Device Battery Input | Automotive Body Control Module (BCM) I/O |
Use Scenario: Protecting Li-ion battery charging circuits in portable diagnostic tools against accidental reverse-polarity connection and hot-swap spikes. IC Role / Device Role / Timing Role: Unidirectional TVS on battery input rail to absorb reverse-energy transients and clamp forward surges during insertion. Use Value: 200 W peak power rating handles 10/1000 µs surges from battery connector arcing; 30 V VRWM matches nominal 24–28 V medical battery packs. | Use Scenario: Shielding LIN bus or discrete switch inputs in BCMs from load dump and ISO 7637-2 Pulse 5a transients in 12 V automotive systems. IC Role / Device Role / Timing Role: TVS mounted at connector entry point to divert surge energy before reaching microcontroller GPIO or level translators. Use Value: 48.4 A IPP capability exceeds ISO 7637-2 Pulse 5a requirements (up to 40 A); DO−216AA footprint allows dense routing near connectors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ30A | Same VRWM (30 V) and VC (48.4 V), but SMA package (2.5 mm height, 2× larger footprint); 200 W rating same, RJA = 248 °C/W vs. 3.2 °C/W to tab | Requires more PCB area and lacks integral heatsink; less suitable for space-constrained or high-reliability thermal designs | Select SMAJ30A only if legacy SMA layout exists and thermal derating margins allow higher ambient temperatures |
| 1.5SMC33A | Higher VRWM (33 V), higher VC (53.3 V), DO-214AB package (2.7 mm height); 1500 W 8/20 µs rating but no cathode-tab thermal path | Better for higher-voltage rails (>33 V), but clamps at higher voltage and offers no low-Z thermal interface | Choose 1.5SMC33A when protecting 36 V systems where tighter clamping margin is acceptable and thermal management is handled externally |
Compared with SMAJ30A and 1.5SMC33A, the 1PMT30AT1G delivers superior thermal performance via its cathode-tab design and smallest industry footprint - making it optimal for next-generation compact, high-power-density designs where board space and thermal headroom are constrained.
Availability
1PMT30AT1G is available at Aetrix Electronics and suitable for USB power delivery interfaces, industrial sensor signal conditioning, and portable medical device battery inputs requiring stable component supply and long-term lifecycle support.
Supply support for 1PMT30AT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The 1PMT30AT1G belongs to the 1PMT5.0AT1G/T3G Series - a family of unidirectional Zener TVS diodes engineered specifically for space-constrained, high-surge-protection applications demanding low-profile packaging, high thermal efficiency, and robust ESD immunity.
FAQ
What is the clamping voltage of the 1PMT30AT1G under maximum rated surge current?
The 1PMT30AT1G has a maximum clamping voltage (VC) of 36.8 V when subjected to its peak pulse current (IPP) of 48.4 A under the standard 10/1000 µs waveform. This value is guaranteed per the datasheet's Electrical Characteristics table and defines the upper voltage limit imposed on protected circuitry during transient events - critical for ensuring downstream components remain within their absolute maximum ratings.
Is the 1PMT30AT1G suitable for bidirectional transient protection?
No, the 1PMT30AT1G is a unidirectional TVS diode, intended only for DC or single-polarity signal line protection. Its electrical characteristics - including specified VRWM, VBR, and VC - are defined for reverse-bias operation. For AC or bidirectional applications (e.g., RS-485, CAN), a dedicated bidirectional part such as the 1PMT30AT1G's counterpart in the bidirectional series must be used instead.
How does the POWERMITE® package of the 1PMT30AT1G improve thermal performance compared to standard SMA?
The 1PMT30AT1G's POWERMITE® package achieves 3.2 °C/W junction-to-cathode thermal resistance due to its full metallic bottom and integral heatsink tabs - matching SMA thermal performance while occupying 50% less PCB area and standing only 1.1 mm tall. This enables higher surge power handling without added heatsinks and supports denser, lower-profile board layouts not feasible with traditional SMA packages.
What is the maximum ambient temperature at which the 1PMT30AT1G can sustain full 200 W peak power?
The 1PMT30AT1G sustains full 200 W peak power only at TA = 25°C. Per the Pulse Derating Curve (Figure 4), its usable peak power decreases linearly above 25°C - dropping to ~100 W at 100°C ambient. Engineers must apply derating based on actual board layout, copper area, and airflow; the 3.2 °C/W RJcathode enables effective thermal management when the cathode tab is soldered to a large copper pour.
Does the 1PMT30AT1G meet automotive-grade reliability standards?
The 1PMT30AT1G is not AEC-Q200 qualified and is not marketed for automotive use. While it operates from −55°C to +150°C and meets stringent ESD (Class 3 HBM >16 kV) and surge (1000 W 8/20 µs) requirements, onsemi positions this device for industrial, consumer, and medical applications. For automotive body control or infotainment systems, AEC-Q200-qualified alternatives like the SMBJ30A-Q should be selected.
1PMT30AT1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- DO-216AA
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 30V
- Voltage - Breakdown (Min):
- 33.3V
- Voltage - Clamping (Max) @ Ipp:
- 48.4V
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- 1000W (1kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Powermite
1PMT30AT1G FAQ
1.How can I place an order for 1PMT30AT1G through Aetrix?
Please submit a Request for Quotation (RFQ) for 1PMT30AT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1PMT30AT1G reliable?
The price and inventory of 1PMT30AT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1PMT30AT1G is usually 5 days.
3.What payment methods are accepted for 1PMT30AT1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1PMT30AT1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1PMT30AT1G?
1PMT30AT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1PMT30AT1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1PMT30AT1G?
For technical support, including 1PMT30AT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1PMT30AT1G requirements.
6.How does Aetrix verify that 1PMT30AT1G is sourced from the original manufacturer or authorized distributors?
All 1PMT30AT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1PMT30AT1G meets industry standards.
7.What is the process for return or replacement of 1PMT30AT1G?
All 1PMT30AT1G units undergo pre-shipment inspection (PSI). If there is an issue with 1PMT30AT1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1PMT30AT1G part is unused and in its original packaging.
Return procedure for 1PMT30AT1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1PMT30AT1G Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
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