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onsemi 1PMT33AT1G
- Part No.:
- 1PMT33AT1G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- DO-216AA
- Datasheet:
-
1PMT33AT1G.pdf
- Description:
- TVS DIODE 33VWM 53.3VC POWERMITE
- Quantity:
- Payment:
- Shipping:
Inventory:4,614
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Product details
Overview
1PMT33AT1G from onsemi is a unidirectional Zener transient voltage suppressor (TVS) diode in POWERMITE® (DO-216AA) package, designed for clamping ESD and surge transients in low-voltage power rails and signal lines. It features a 33 V working peak reverse voltage (VRWM), 53.3 V maximum clamping voltage at 3.8 A peak pulse current, 200 W peak pulse power (10/1000 µs), <1 ns response time, and 1.1 mm max height. It is used in portable electronics power input protection.
For engineers reviewing the 1PMT33AT1G datasheet, pinout, applications, or equivalent options, key selection criteria include VRWM matching system DC bus voltage, clamping voltage margin relative to IC absolute maximum ratings, thermal performance under repeated surge duty cycles, and PCB space constraints requiring ultra-low-profile surface-mount protection.
Technical Context
The 1PMT33AT1G operates as a unidirectional Zener-based TVS, conducting only during reverse overvoltage events above its breakdown threshold (36.7–40.6 V). Its clamping action relies on avalanche multiplication with low dynamic impedance, enabling fast energy diversion away from downstream circuitry.
Thermal design is enabled by integral heatsink tabs and full metallic cathode bottom, achieving 3.2 °C/W junction-to-cathode thermal resistance at Ttab = 75°C. The DO-216AA (POWERMITE) package delivers SMA-equivalent thermal performance in 50% smaller footprint (8.45 mm²) and 1.1 mm height.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 33 V - Maximum continuous reverse operating voltage before clamping begins; must exceed system nominal rail voltage (e.g., 24 V or 28 V DC bus). |
| VC @ IPP | 53.3 V @ 3.8 A - Clamped voltage seen by protected IC during 10/1000 µs surge; defines minimum safe headroom for downstream device abs max rating. |
| PPK | 200 W @ 10/1000 µs - Peak transient energy handling capability; sufficient for IEC 61000-4-5 Level 3 (1 A, 2 Ω source) surges. |
| Response Time | <1 ns - Enables suppression before sensitive logic or analog circuits experience overstress; critical for USB, HDMI, or MCU I/O line protection. |
| ESD Rating | Class 3 HBM (>16 kV) - Meets stringent electrostatic discharge immunity requirements for handheld and consumer interface ports. |
| Package | DO-216AA (POWERMITE) - JEDEC-registered 2-pin SMD with integral heatsink tabs and full metallic cathode bottom for enhanced thermal dissipation. |
| Height | Max 1.1 mm - Enables use in ultra-thin devices such as smartphones, wearables, and compact IoT modules where vertical clearance is constrained. |
Pinout & Package
1PMT33AT1G uses the POWERMITE® (DO-216AA) surface-mount package (Case 457), featuring a cathode-anode configuration with polarity band marking. The full metallic cathode bottom serves as both electrical terminal and thermal path, while locking tabs improve mechanical retention during reflow.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Transient return path / heat sink node | Connected to ground or low-impedance return plane; full metallic bottom enables direct thermal coupling to PCB copper pour or heatsink pad. |
| 2 (Anode) | Protected line connection | Connected to the line being protected (e.g., VBUS, DC input); reverse-biased during normal operation; conducts during overvoltage events. |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile thermal package | DO-216AA delivers SMA-level thermal resistance (RJcathode = 3.2 °C/W) in 50% smaller footprint and 1.1 mm height-enabling high-power surge protection in space-constrained designs. |
| Fast transient response | <1 ns turn-on ensures suppression occurs before voltage overshoot exceeds IC absolute maximum ratings on high-speed interfaces or microcontroller I/O pins. |
| High ESD robustness | Class 3 (>16 kV) HBM rating supports direct integration on exposed ports (USB-C, audio jacks, buttons) without additional ESD staging components. |
| Stable clamping under surge | Clamping voltage of 53.3 V at 3.8 A (10/1000 µs) remains consistent across temperature and lifetime, ensuring predictable protection margin in automotive and industrial environments. |
| Pb-free & RoHS compliant | Meets global environmental compliance requirements; compatible with standard SnAgCu reflow profiles and halogen-free board assembly processes. |
Applications
| USB Power Input Protection | Industrial Sensor Signal Line Protection |
|---|---|
Use Scenario: Protecting 5 V or 12 V USB-powered peripherals from hot-plug transients and cable-induced surges. IC Role / Device Role / Timing Role: Unidirectional TVS placed between VBUS and GND to clamp overvoltage before reaching USB controller or LDO regulator. Use Value: Prevents latch-up or permanent damage to USB PHY and power management ICs during repeated plug/unplug cycles in factory automation equipment. |
Use Scenario: Safeguarding 4–20 mA or 0–10 V analog sensor outputs in harsh industrial environments subject to lightning-induced ground shifts. IC Role / Device Role / Timing Role: Bidirectional clamping not required; unidirectional 1PMT33AT1G protects against positive transients on sensor supply or output lines referenced to local ground. Use Value: Maintains signal integrity and prevents ADC saturation or op-amp damage during 1 kV/500 A surge events per IEC 61000-4-5. |
| Portable Medical Device Battery Input | Automotive Infotainment Power Rail |
Use Scenario: Securing Li-ion battery charging inputs in handheld diagnostic tools exposed to ESD during clinical handling. IC Role / Device Role / Timing Role: Placed at battery connector to absorb HBM discharges and contact surges before reaching fuel gauge IC or charger controller. Use Value: Eliminates need for secondary TVS stages due to 16 kV HBM rating and low clamping voltage, reducing BOM count and board area. |
Use Scenario: Protecting 12 V accessory power rail feeding infotainment head units against load dump and jump-start transients. IC Role / Device Role / Timing Role: Used in parallel with higher-energy TVS or as pre-clamp stage to reduce stress on primary 300 W suppressors. Use Value: Low 1.1 mm profile allows placement near connectors without interfering with shield cans or display stack-ups in tight dashboard layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ33A | Same VRWM (33 V), but SMA package (2.5 mm height, 49 mm² footprint); 400 W peak power (10/1000 µs); RJA = 50°C/W vs. 248°C/W for 1PMT33AT1G. | Higher surge rating but larger size and poorer thermal coupling; requires more PCB area and less effective self-heating mitigation. | Select SMAJ33A only when >200 W surge margin is mandatory and board height/space permits larger footprint. |
| 1.5SMC33A | DO-214AB package; 33 V VRWM; 400 W peak power; 2.79 mm height; 100 mm² footprint; no integral heatsink tabs or metallic bottom. | Higher power rating but significantly taller and less thermally efficient; unsuitable for ultra-low-profile assemblies. | Choose 1.5SMC33A for legacy designs already using SMC footprints or where thermal mass from large copper pours compensates for inferior package thermal design. |
Compared with SMAJ33A and 1.5SMC33A, the 1PMT33AT1G provides superior volumetric efficiency (8.45 mm² × 1.1 mm) and thermal performance (RJcathode = 3.2 °C/W), making it optimal for next-generation portable and automotive electronics where height and thermal reliability are critical.
Availability
1PMT33AT1G is available at Aetrix Electronics and suitable for USB power input protection, industrial sensor signal line protection, portable medical device battery input, and automotive infotainment power rail applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for 1PMT33AT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The 1PMT33AT1G belongs to the 1PMT5.0AT1G/T3G Series of Zener transient voltage suppressors, engineered specifically for space-constrained, high-reliability overvoltage protection in portable and automotive electronics where low profile and thermal efficiency are essential.
FAQ
What is the working peak reverse voltage (VRWM) of the 1PMT33AT1G?
The 1PMT33AT1G has a working peak reverse voltage (VRWM) of 33 V. This value represents the maximum continuous DC or peak AC voltage that can be applied across the device in normal operation without triggering clamping. It is selected to match or slightly exceed the nominal voltage of the protected line-such as a 24 V industrial bus or 28 V avionics supply-ensuring reliable standby operation while providing adequate margin before breakdown.
How does the clamping voltage of the 1PMT33AT1G compare to its breakdown voltage?
The 1PMT33AT1G has a breakdown voltage (VBR) range of 36.7 V to 40.6 V at 1 mA test current, while its maximum clamping voltage (VC) is 53.3 V at 3.8 A peak pulse current (10/1000 µs). This ~13–20 V differential reflects the device's dynamic impedance under surge conditions and defines the actual overvoltage stress imposed on downstream components during transient events.
Is the 1PMT33AT1G suitable for bidirectional transient protection?
No, the 1PMT33AT1G is a unidirectional TVS diode and is not rated for bidirectional protection. It conducts only during reverse-biased overvoltage events. For AC-coupled or symmetrical signal lines (e.g., RS-485, CAN), a bidirectional variant such as 1PMT33C or separate back-to-back configuration would be required. Using 1PMT33AT1G on bidirectional paths risks forward conduction and failure during normal signal swings.
What is the thermal resistance from junction to cathode tab for the 1PMT33AT1G?
The 1PMT33AT1G has a junction-to-cathode thermal resistance (RJcathode) of 3.2 °C/W when the cathode tab is mounted to a 75°C thermal reference. This low value is achieved via the full metallic bottom and integral heatsink tabs in the POWERMITE® package, enabling effective heat transfer to PCB copper or external heatsinks-critical for maintaining reliability under repetitive surge conditions.
Can the 1PMT33AT1G replace SMAJ33A in an existing design without layout changes?
No, the 1PMT33AT1G cannot serve as a drop-in replacement for SMAJ33A due to different package dimensions and pinouts: 1PMT33AT1G uses DO-216AA (2.0 × 1.9 mm, 1.1 mm height), while SMAJ33A uses SMA (4.5 × 2.7 mm, 2.5 mm height). Layout redesign is required to accommodate the smaller footprint and revised thermal pad requirements of the POWERMITE® package.
What is the ESD rating of the 1PMT33AT1G and how is it verified?
The 1PMT33AT1G is rated for Class 3 Human Body Model (HBM) ESD protection with >16 kV withstand capability. This rating is verified per ANSI/ESDA/JEDEC JS-001-2017 test methodology, applying 150 pF/330 Ω discharge pulses to the device terminals while monitoring for parametric shift or functional failure-ensuring robustness for direct integration on user-accessible ports.
1PMT33AT1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- DO-216AA
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 33V
- Voltage - Breakdown (Min):
- 36.7V
- Voltage - Clamping (Max) @ Ipp:
- 53.3V
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- 1000W (1kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Powermite
1PMT33AT1G FAQ
1.How can I place an order for 1PMT33AT1G through Aetrix?
Please submit a Request for Quotation (RFQ) for 1PMT33AT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1PMT33AT1G reliable?
The price and inventory of 1PMT33AT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1PMT33AT1G is usually 5 days.
3.What payment methods are accepted for 1PMT33AT1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1PMT33AT1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1PMT33AT1G?
1PMT33AT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1PMT33AT1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1PMT33AT1G?
For technical support, including 1PMT33AT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1PMT33AT1G requirements.
6.How does Aetrix verify that 1PMT33AT1G is sourced from the original manufacturer or authorized distributors?
All 1PMT33AT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1PMT33AT1G meets industry standards.
7.What is the process for return or replacement of 1PMT33AT1G?
All 1PMT33AT1G units undergo pre-shipment inspection (PSI). If there is an issue with 1PMT33AT1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1PMT33AT1G part is unused and in its original packaging.
Return procedure for 1PMT33AT1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1PMT33AT1G Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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