onsemi 1PMT5.0AT3

Overview

1PMT5.0AT3 from onsemi is a unidirectional Zener transient voltage suppressor (TVS) in the POWERMITE® package, designed for primary overvoltage protection of DC power rails and signal lines. It features a 5.0 V working peak reverse voltage (VRWM), 9.2 V maximum clamping voltage at 21.7 A peak pulse current, 200 W peak pulse power (10/1000 µs), <1 ns response time, and 1.1 mm max height. It is used in cellular phone power input stages to absorb ESD and lightning-induced surges.

For engineers reviewing the 1PMT5.0AT3 datasheet, pinout, applications, or equivalent options, key selection criteria include clamping voltage margin vs. protected IC's absolute maximum rating, thermal performance under repeated surge duty cycles, PCB footprint constraints in ultra-thin portable designs, and compliance with IEC 61000-4-2 Level 4 (±16 kV contact discharge).

Technical Context

The 1PMT5.0AT3 operates as a Zener-based crowbar device, entering avalanche conduction when reverse voltage exceeds its 6.4–7.0 V breakdown range (VBR @ 10 mA). Its low 35 °C/W junction-to-anode thermal resistance enables effective heat transfer to the PCB via the anode pad, while the cathode tab provides a dedicated low-impedance thermal path (23 °C/W junction-to-cathode).

It delivers 200 W peak power for 10/1000 µs transients and sustains 1000 W for 8/20 µs pulses, with clamping tightly controlled to ≤9.2 V at 21.7 A. The POWERMITE package integrates metallic heatsink tabs and a full metallic bottom to eliminate flux entrapment and ensure repeatable solder joint integrity during reflow.

Key Specifications

Pinout & Package

The 1PMT5.0AT3 uses the POWERMITE® (DO-216AA) surface-mount package, JEDEC-registered, with void-free thermosetting plastic case, full metallic bottom, and integral heatsink/locking tabs. Dimensions: 2.05 × 2.18 × 1.10 mm (L × W × H), footprint area 8.45 mm².

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Compared with SMAJ5.0A and 1.5SMC5.0A, the 1PMT5.0AT3 uniquely balances 200 W surge capability with 1.1 mm profile and 8.45 mm² footprint-enabling protection in form factors where SMA and SMC packages physically cannot fit, without sacrificing clamping performance or thermal reliability.

Availability

1PMT5.0AT3 is available at Aetrix Electronics and suitable for smartphone power input protection, USB-C port ESD clamping, and industrial sensor node power rail protection requiring stable component supply, long-term lifecycle support, and Pb-free compliance.

Supply support for 1PMT5.0AT3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, delivering silicon solutions for automotive, industrial, cloud, and intelligent power systems.

The 1PMT5.0AT3 belongs to onsemi's POWERMITE® TVS diode family, engineered specifically to meet the miniaturization, thermal, and reliability demands of next-generation portable and IoT power protection-replacing legacy SMA/SMB packages without compromising surge robustness.

FAQ

What is the working peak reverse voltage (VRWM) of the 1PMT5.0AT3?

The 1PMT5.0AT3 has a working peak reverse voltage (VRWM) of 5.0 V. This value defines the maximum continuous DC or peak AC voltage the device can withstand without entering avalanche conduction. It is selected to match standard 5 V power rails-such as USB VBUS-ensuring the 1PMT5.0AT3 remains non-conductive during normal operation while triggering reliably during overvoltage events.

What clamping voltage does the 1PMT5.0AT3 deliver at its rated peak pulse current?

The 1PMT5.0AT3 delivers a maximum clamping voltage (VC) of 9.2 V at its rated peak pulse current of 21.7 A (10/1000 µs waveform). This clamping level ensures protected downstream components-such as USB-C controllers or PMICs rated for 12 V absolute maximum-remain within safe operating limits during surge events, directly supporting robust system-level EMC design.

How does the POWERMITE® package of the 1PMT5.0AT3 improve thermal performance compared to standard SMT packages?

The 1PMT5.0AT3's POWERMITE® package achieves thermal performance equivalent to the larger SMA package despite being 50% smaller in footprint. Its integral metallic heatsink tabs and full metallic bottom provide low-impedance thermal paths: junction-to-cathode resistance is 23 °C/W, and junction-to-anode is 35 °C/W. This enables efficient heat transfer to the PCB without requiring additional copper pours or thermal vias-critical for thin, densely packed boards.

Is the 1PMT5.0AT3 suitable for IEC 61000-4-2 ESD protection?

Yes, the 1PMT5.0AT3 is explicitly rated for Class 3 ESD per Human Body Model (>16 kV), making it suitable for IEC 61000-4-2 Level 4 contact discharge protection. Its <1 ns response time ensures clamping initiates before ESD energy couples into sensitive circuitry, and its low leakage (<50 nA at 5 V) avoids loading 5 V rails in battery-operated devices using the 1PMT5.0AT3.

What is the maximum package height of the 1PMT5.0AT3, and why is this significant?

The 1PMT5.0AT3 has a maximum package height of 1.1 mm. This ultra-low profile is critical for modern portable electronics-especially smartphones and wearables-where total Z-height budgets are tightly constrained. At 1.1 mm, the 1PMT5.0AT3 fits within sub-1.2 mm mechanical envelopes where traditional SMA (2.2 mm) or SMC (2.6 mm) packages cannot be accommodated, enabling protection without redesigning the entire mechanical stackup.