My Inquiry
My Account
onsemi 1PMT51AT1
- Part No.:
- 1PMT51AT1
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- DO-216AA
- Datasheet:
-
1PMT51AT1.pdf
- Description:
- TVS DIODE 51VWM 82.4VC POWERMITE
- Quantity:
- Payment:
- Shipping:
Inventory:5,807
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1PMT51AT1 from onsemi is a unidirectional Zener transient voltage suppressor (TVS) in the POWERMITE® package, designed for clamping high-energy transients in DC power rails and signal lines. It features a 51 V working peak reverse voltage (VRWM), 82.4 V maximum clamping voltage at 2.1 A peak pulse current, 200 W peak pulse power (10/1000 µs), <1 ns response time, and 1.1 mm profile height. It is used in portable electronics power input protection and USB interface surge suppression.
For engineers reviewing the 1PMT51AT1 datasheet, pinout, applications, or equivalent options, key selection criteria include clamping voltage margin vs. system operating voltage, thermal performance under repeated surge duty cycles, PCB footprint constraints, and compliance with IEC 61000-4-2 Class 3 ESD (>16 kV HBM).
Technical Context
This TVS diode operates as a voltage-clamped shunt protector: when reverse voltage exceeds its breakdown threshold (56.7–62.7 V), it avalanches to divert surge current away from downstream circuitry. Its low Zener impedance and fast sub-nanosecond response ensure minimal overvoltage exposure during ESD or lightning-induced transients.
The POWERMITE package integrates a full metallic cathode tab for direct thermal coupling to PCB copper, achieving 3.2 °C/W junction-to-cathode thermal resistance. Its 8.45 mm² footprint and 1.1 mm max height enable compact placement near connectors or IC power pins without compromising thermal dissipation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Peak Reverse Voltage (VRWM) | 51 V - Maximum continuous DC or peak AC voltage the device blocks without clamping; sets minimum system operating voltage margin. |
| Breakdown Voltage (VBR) @ IT = 1 mA | 56.7–62.7 V - Confirmed avalanche onset range; ensures reliable turn-on before sensitive components exceed absolute max ratings. |
| Clamping Voltage (VC) @ IPP = 2.1 A | 82.4 V - Measured peak voltage across device during 10/1000 µs surge; defines worst-case overvoltage seen by protected load. |
| Peak Pulse Power (Ppk) | 200 W @ 10/1000 µs - Sustained energy-handling capability for single-event transients; derates linearly above 25°C ambient. |
| Response Time | <1 ns - Time from transient onset to clamping conduction; critical for protecting high-speed interfaces like USB 2.0 or HDMI. |
| ESD Rating (HBM) | >16 kV - Withstands human-body-model discharges per ANSI/ESDA/JEDEC JS-001; qualifies for front-panel button, port, and keypad protection. |
| Thermal Resistance (Junction-to-Cathode) | 3.2 °C/W - Enables efficient heat transfer to PCB copper pour; supports sustained operation at 23 W DC power with cathode tab at 75°C. |
Pinout & Package
The 1PMT51AT1 is housed in the POWERMITE® package (JEDEC DO-216AA), a surface-mount plastic case with integral heatsink tabs and full metallic cathode bottom. Its 2-pin configuration places the cathode (pin 1, marked with polarity band) and anode (pin 2) on a 2.54 mm pitch, optimized for thermal conduction and minimal flux entrapment.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | High-side clamp node | Connected to protected line (e.g., VBUS); full-metal bottom enables direct thermal path to PCB ground plane or copper pour. |
| 2 (Anode) | Reference/return node | Typically tied to system ground or low-impedance return; low-inductance path required for effective transient diversion. |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile POWERMITE package | 1.1 mm max height and 8.45 mm² footprint - fits under tight mechanical shields and enables layout near board edges or connectors. |
| Integral heatsink/locking tabs | Mechanical anchoring and enhanced thermal conduction - improves solder joint reliability and sustains higher average power during repetitive surges. |
| Full metallic cathode bottom | Eliminates flux entrapment and reduces thermal resistance to 3.2 °C/W - enables use in thermally constrained industrial power supplies. |
| Pb-free and RoHS-compliant | Meets EU Directive 2011/65/EU and JEDEC J-STD-020 reflow profiles - supports lead-free manufacturing and global market access. |
| Cathode band marking | Clear visual polarity identification - prevents misorientation during automated placement and manual inspection. |
Applications
| USB Power Input Protection | Industrial Sensor Signal Line Protection |
|---|---|
Use Scenario: Protecting 5 V USB VBUS lines in handheld test equipment against hot-plug transients and ESD events. IC Role / Device Role / Timing Role: Shunt-type transient suppressor placed between VBUS and GND, clamping surges before they reach USB controller or LDO regulator. Use Value: 82.4 V clamping voltage provides >16 V margin above 5 V nominal rail, ensuring no overvoltage stress on 6.5 V-rated USB PHY inputs. |
Use Scenario: Safeguarding 24 V analog sensor outputs (e.g., 4–20 mA loop transmitters) from induced lightning surges in factory automation cabinets. IC Role / Device Role / Timing Role: Unidirectional TVS connected across sensor output and local ground, absorbing common-mode transients coupled via long cable runs. Use Value: 200 W peak power rating handles IEC 61000-4-5 Level 3 (1 kV/42 Ω) surges without degradation, maintaining signal integrity over 10⁵+ events. |
| Portable Medical Device Battery Charging Port | Automotive Infotainment USB Hub Protection |
Use Scenario: Securing lithium-ion battery charger inputs in portable ultrasound probes exposed to ESD during clinical handling. IC Role / Device Role / Timing Role: Primary-level TVS at micro-USB Type-B connector, limiting voltage excursion during 15 kV contact discharge per IEC 61000-4-2. Use Value: <1 ns response time ensures clamping occurs before battery protection ICs or charge controllers experience latch-up or gate oxide damage. |
Use Scenario: Protecting USB 2.0 data and power lines in automotive head units subjected to load-dump and alternator ripple transients. IC Role / Device Role / Timing Role: Dual-role suppressor: clamps VBUS surges and shunts ESD on D+/D− lines via separate low-capacitance devices (not this part). Use Value: 51 V VRWM matches typical automotive 12 V system derated for cold-crank conditions, avoiding false triggering during 14 V nominal operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ51A | Same VRWM (51 V) and VC (82.4 V), but SMA package (3.5 mm height, 2× larger footprint); 200 W rating same, RJA = 500 °C/W vs. 248 °C/W for 1PMT51AT1. | Less suitable for ultra-thin devices; requires more PCB area and offers inferior thermal coupling to board. | Select SMAJ51A only if legacy layout reuse or higher-volume tape-and-reel availability is prioritized over size and thermal performance. |
| 1.5SMC51A | Higher peak power (1500 W @ 10/1000 µs), DO-214AB package (4.5 mm height, 12.9 mm² footprint); VRWM = 51 V, VC = 82.4 V, but slower response (~1.5 ns) and no integral heatsink. | Better for high-energy surges (e.g., telecom AC mains), but excessive height prohibits use in smartphones or wearables. | Choose 1.5SMC51A where surge energy exceeds 200 W but space constraints are less severe than in portable consumer designs. |
Compared with SMAJ51A and 1.5SMC51A, the 1PMT51AT1 delivers identical electrical protection performance in a 50% smaller footprint and 1.1 mm profile, with superior thermal resistance enabling higher sustained power handling in dense PCB layouts-making it optimal for space-constrained, thermally demanding applications.
Availability
1PMT51AT1 is available at Aetrix Electronics and suitable for USB power input protection, industrial sensor signal line protection, and portable medical device battery charging port applications requiring stable component supply, consistent parametric performance, and RoHS-compliant sourcing.
Supply support for 1PMT51AT1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The 1PMT51AT1 belongs to the 1PMT5.0AT1G/T3G Series of Zener transient voltage suppressors, engineered specifically for compact, high-density PCBs where low-profile surge protection with robust thermal performance is essential.
FAQ
What is the exact working peak reverse voltage (VRWM) specification for the 1PMT51AT1?
The 1PMT51AT1 has a specified working peak reverse voltage (VRWM) of 51 V. This value is the maximum DC or continuous peak operating voltage the device can block without entering avalanche conduction. It is selected to provide sufficient margin above typical 48–50 V system rails while ensuring reliable clamping onset before downstream components exceed their absolute maximum ratings.
Does the 1PMT51AT1 meet industry-standard ESD requirements?
Yes, the 1PMT51AT1 meets Class 3 ESD requirements per the Human Body Model (HBM), with a rating exceeding 16 kV. This is confirmed in the official datasheet and qualifies the 1PMT51AT1 for use in applications requiring robust electrostatic discharge immunity, such as handheld medical devices, consumer port interfaces, and industrial control panels exposed to frequent operator contact.
What is the thermal resistance from junction to cathode tab for the 1PMT51AT1?
The 1PMT51AT1 has a junction-to-cathode thermal resistance (RJcathode) of 3.2 °C/W. This low value is enabled by the full metallic bottom and integral heatsink tabs in the POWERMITE package, allowing efficient heat transfer to the PCB copper pour and supporting up to 23 W of DC power dissipation when the cathode tab is maintained at 75°C.
Can the 1PMT51AT1 be used in bidirectional protection configurations?
No, the 1PMT51AT1 is a unidirectional TVS diode and is not rated for bidirectional operation. Its electrical characteristics-including breakdown voltage, clamping behavior, and leakage-are specified only for reverse-biased operation. For bidirectional protection, a dedicated bidirectional TVS such as the SMBJ51CA must be used instead of the 1PMT51AT1.
What is the maximum clamping voltage of the 1PMT51AT1 at its rated peak pulse current?
The 1PMT51AT1 exhibits a maximum clamping voltage (VC) of 82.4 V when subjected to its rated peak pulse current of 2.1 A under the standard 10/1000 µs waveform. This value is measured and guaranteed per the datasheet and defines the upper voltage limit imposed on protected circuitry during transient events.
1PMT51AT1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- DO-216AA
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 51V
- Voltage - Breakdown (Min):
- 56.7V
- Voltage - Clamping (Max) @ Ipp:
- 82.4V
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- 1000W (1kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Powermite
1PMT51AT1 FAQ
1.How can I place an order for 1PMT51AT1 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1PMT51AT1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1PMT51AT1 reliable?
The price and inventory of 1PMT51AT1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1PMT51AT1 is usually 5 days.
3.What payment methods are accepted for 1PMT51AT1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1PMT51AT1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1PMT51AT1?
1PMT51AT1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1PMT51AT1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1PMT51AT1?
For technical support, including 1PMT51AT1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1PMT51AT1 requirements.
6.How does Aetrix verify that 1PMT51AT1 is sourced from the original manufacturer or authorized distributors?
All 1PMT51AT1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1PMT51AT1 meets industry standards.
7.What is the process for return or replacement of 1PMT51AT1?
All 1PMT51AT1 units undergo pre-shipment inspection (PSI). If there is an issue with 1PMT51AT1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1PMT51AT1 part is unused and in its original packaging.
Return procedure for 1PMT51AT1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1PMT51AT1 Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
