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onsemi 1PMT58AT1
- Part No.:
- 1PMT58AT1
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- DO-216AA
- Datasheet:
-
1PMT58AT1.pdf
- Description:
- TVS DIODE 58VWM 93.6VC POWERMITE
- Quantity:
- Payment:
- Shipping:
Inventory:3,834
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Product details
Overview
1PMT58AT1 from onsemi is a unidirectional Zener transient voltage suppressor (TVS) in POWERMITE® (DO-216AA) package, designed for clamping high-energy ESD and surge transients. It features a 58 V working peak reverse voltage (VRWM), 93.6 A peak pulse current (IPP), 71.2 V maximum clamping voltage (VC), 175 W peak power rating at 10/1000 µs, and <1 ns response time - deployed in DC power rails of portable electronics and industrial power supplies.
For engineers reviewing the 1PMT58AT1 datasheet, pinout, applications, or equivalent options, key selection criteria include clamping voltage margin vs. protected IC's absolute maximum rating, thermal performance under repeated surge duty cycles, cathode-tab thermal path capability, and PCB footprint compatibility with space-constrained layouts.
Technical Context
This device operates as a unidirectional Zener-based TVS diode, conducting only during reverse overvoltage events above its breakdown threshold (VBR = 64.4–71.2 V). Its clamping action relies on avalanche multiplication in the doped junction, with low dynamic impedance enabling rapid voltage limiting during fast transients.
Thermal design centers on the integral cathode tab (RJcathode = 3.2 °C/W), which serves as both electrical terminal and heatsink - requiring direct copper pour connection to dissipate 175 W pulses. The 1.1 mm max height and 8.45 mm² footprint enable placement near I/O connectors or DC input stages without height interference.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Peak Reverse Voltage (VRWM) | 58 V - sets minimum operating voltage threshold before clamping begins; must exceed system DC rail voltage. |
| Breakdown Voltage (VBR) @ IT = 1.0 mA | 64.4–71.2 V - defines onset of avalanche conduction; ensures reliable triggering above normal operating voltage. |
| Clamping Voltage (VC) @ IPP = 93.6 A | 71.2 V - maximum voltage seen by protected circuit during 10/1000 µs surge; determines safe margin for downstream ICs. |
| Peak Pulse Power (Ppk) | 175 W @ 10/1000 µs - energy-handling capacity for single transient events; derates linearly above 25°C ambient. |
| ESD Rating (HBM) | Class 3 (>16 kV) - qualifies for direct interface protection in handheld devices per JEDEC JS-001. |
| Response Time | <1 ns - enables suppression of nanosecond-scale ESD spikes before sensitive logic is damaged. |
| Thermal Resistance (Junction-to-Cathode Tab) | 3.2 °C/W - enables high-power pulse dissipation when cathode tab is soldered to ≥1 cm² internal copper plane. |
Pinout & Package
1PMT58AT1 is housed in the POWERMITE® package (JEDEC DO-216AA), a surface-mount, low-profile (1.1 mm max height), thermally enhanced plastic case with integral metallic cathode tab and locking heatsink features. The package uses a 2-pin configuration with full metallic bottom for flux-free soldering and optimized thermal transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Surge Current Sink / Heat Path | Connected to system ground or chassis; must be routed to large copper area for thermal management and low-inductance return path. |
| 2 (Anode) | Surge Current Source / Reference Node | Connected to protected line (e.g., DC input, USB VBUS); forms clamping loop with cathode to shunt transient energy. |
Key Features
| Feature | Design Value |
|---|---|
| Integral Cathode Heatsink Tab | Enables 3.2 °C/W thermal resistance to PCB copper - critical for sustaining 175 W pulses without junction overheating. |
| Low Profile (1.1 mm max height) | Allows placement beneath mechanical shields or in ultra-thin enclosures where SMA/SMB packages would interfere. |
| Small Footprint (8.45 mm²) | Reduces PCB real estate by 50% vs. SMA while maintaining comparable thermal performance - ideal for compact power modules. |
| Full Metallic Bottom | Eliminates flux entrapment during reflow, ensuring void-free solder joints and consistent thermal conductivity across production lots. |
| Pb-Free & RoHS Compliant | Meets global environmental compliance requirements without sacrificing surge robustness or thermal reliability. |
Applications
| Industrial Power Input Protection | USB Type-C VBUS Line Protection |
|---|---|
Use Scenario: 24–48 V DC industrial power supply input subjected to lightning-induced surges and load-dump transients. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed upstream of DC-DC converter input to limit voltage excursions below 75 V. Use Value: With 71.2 V clamping at 93.6 A, it prevents overvoltage damage to primary-side controllers rated for ≤80 V absolute maximum. |
Use Scenario: USB Type-C receptacle on portable medical monitor exposed to ESD during cable insertion and hot-plug events. IC Role / Device Role / Timing Role: Primary ESD suppressor on VBUS line, positioned between connector and USB PD controller. Use Value: Class 3 HBM (>16 kV) rating and sub-1 ns response ensure immunity to contact discharge without signal integrity degradation. |
| Automotive Body Control Module (BCM) Inputs | Point-of-Load DC Rail Protection |
Use Scenario: 12 V battery-fed sensor inputs in BCM subjected to ISO 7637-2 pulse 1/2a/5a transients. IC Role / Device Role / Timing Role: Secondary-level transient suppressor after primary LC filter, protecting microcontroller GPIOs and CAN transceivers. Use Value: 175 W peak power rating sustains multiple 10/1000 µs pulses without degradation, supporting automotive qualification requirements. |
Use Scenario: 3.3 V or 5 V point-of-load regulator output feeding FPGA I/O banks vulnerable to back-drive transients. IC Role / Device Role / Timing Role: Low-capacitance (<100 pF at 0 V) clamping device placed directly at regulator output capacitor node. Use Value: Minimal parasitic capacitance avoids destabilizing regulator feedback loop while providing fast clamping for board-level coupling events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ58A | Same VRWM (58 V) and VC (70.1 V), but SMA package (2.5 mm height, 2× larger footprint); RJA = 50 °C/W vs. 248 °C/W for 1PMT58AT1. | Requires more PCB area and offers lower thermal efficiency; suitable where height is not constrained but cost sensitivity is higher. | Select SMAJ58A only if legacy layout reuse or distributor stock availability outweighs size/thermal advantages of 1PMT58AT1. |
| 1.5SMC58A | Higher peak power (1500 W @ 10/1000 µs), but SMC package (7.1 mm × 6.2 mm); 2.3 mm height; no integral heatsink tab; RJA = 12 °C/W. | Used in high-energy industrial surge protection where PCB space allows larger package; lacks low-profile advantage for portable designs. | Choose 1.5SMC58A for systems requiring >1 kW surge handling; avoid when board thickness or enclosure clearance is limited. |
Compared with SMAJ58A and 1.5SMC58A, 1PMT58AT1 delivers superior volumetric efficiency (8.45 mm² × 1.1 mm) and cathode-tab thermal path (3.2 °C/W), making it optimal for space- and thermal-constrained applications where 175 W clamping suffices - unlike the larger-footprint alternatives that trade size for higher power or legacy compatibility.
Availability
1PMT58AT1 is available at Aetrix Electronics and suitable for industrial power input protection, USB Type-C VBUS line protection, and automotive body control module (BCM) inputs requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for 1PMT58AT1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The 1PMT5.0AT1G/T3G Series was developed to deliver high-surge-capable, ultra-compact TVS protection for next-generation portable and space-constrained electronics - prioritizing thermal efficiency, low profile, and manufacturability in high-volume SMT assembly.
FAQ
What is the maximum clamping voltage of the 1PMT58AT1 under a 10/1000 µs surge?
The 1PMT58AT1 exhibits a maximum clamping voltage (VC) of 71.2 V when subjected to its rated peak pulse current of 93.6 A under a 10/1000 µs waveform. This value is guaranteed across temperature and represents the highest voltage the protected circuit will experience during such a transient event - critical for verifying margin against downstream IC absolute maximum ratings.
Does the 1PMT58AT1 have a bidirectional or unidirectional configuration?
The 1PMT58AT1 is a unidirectional Zener TVS diode, meaning it clamps only during reverse-biased overvoltage conditions - i.e., when the cathode is more positive than the anode. It does not conduct or clamp during forward-biased voltage excursions, making it suitable for DC power rail protection where polarity is fixed.
How should the cathode tab of the 1PMT58AT1 be connected for optimal thermal performance?
For optimal thermal performance, the cathode tab (Pin 1) of the 1PMT58AT1 must be soldered directly to a minimum 1 cm² internal or external copper pour, preferably with multiple thermal vias to inner ground planes. This achieves the specified 3.2 °C/W junction-to-cathode thermal resistance and prevents thermal runaway during repetitive 175 W pulses.
Is the 1PMT58AT1 compatible with lead-free reflow soldering processes?
Yes, the 1PMT58AT1 is Pb-free and RoHS compliant, qualified for standard lead-free reflow profiles with peak temperatures up to 260°C for 10 seconds. Its void-free molded case and corrosion-resistant finish ensure reliable solder joint formation without flux entrapment or intermetallic degradation.
What is the ESD withstand level of the 1PMT58AT1 per human body model (HBM)?
The 1PMT58AT1 is rated to Class 3 per JEDEC JS-001, with an ESD withstand level exceeding 16 kV under the Human Body Model. This makes it suitable for direct integration on I/O lines of handheld and portable equipment where user-contact-induced discharges are a primary failure mode.
1PMT58AT1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- DO-216AA
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 58V
- Voltage - Breakdown (Min):
- 64.4V
- Voltage - Clamping (Max) @ Ipp:
- 93.6V
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- 1000W (1kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Powermite
1PMT58AT1 FAQ
1.How can I place an order for 1PMT58AT1 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1PMT58AT1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1PMT58AT1 reliable?
The price and inventory of 1PMT58AT1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1PMT58AT1 is usually 5 days.
3.What payment methods are accepted for 1PMT58AT1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1PMT58AT1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1PMT58AT1?
1PMT58AT1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1PMT58AT1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1PMT58AT1?
For technical support, including 1PMT58AT1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1PMT58AT1 requirements.
6.How does Aetrix verify that 1PMT58AT1 is sourced from the original manufacturer or authorized distributors?
All 1PMT58AT1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1PMT58AT1 meets industry standards.
7.What is the process for return or replacement of 1PMT58AT1?
All 1PMT58AT1 units undergo pre-shipment inspection (PSI). If there is an issue with 1PMT58AT1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1PMT58AT1 part is unused and in its original packaging.
Return procedure for 1PMT58AT1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1PMT58AT1 Tags
-
ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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