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onsemi 1PMT7.0AT1G
- Part No.:
- 1PMT7.0AT1G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- DO-216AA
- Datasheet:
-
1PMT7.0AT1G.pdf
- Description:
- TVS DIODE 7VWM 12VC POWERMITE
- Quantity:
- Payment:
- Shipping:
Inventory:3,930
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Product details
Overview
1PMT7.0AT1G from onsemi is a unidirectional Zener transient voltage suppressor (TVS) diode in the POWERMITE® package, designed for clamping ESD and surge transients in low-voltage DC lines. It features a 7.0 V working peak reverse voltage (VRWM), 12 V maximum clamping voltage at 16.7 A peak pulse current, <1 ns response time, 200 W peak pulse power (10/1000 µs), and 1.1 mm max height. It is used in portable electronics power rails and I/O protection.
For engineers reviewing the 1PMT7.0AT1G datasheet, pinout, applications, or equivalent options, key selection criteria include VRWM matching system operating voltage, clamping voltage margin relative to IC absolute maximum ratings, thermal performance under repeated surge duty, and PCB space constraints requiring ultra-low-profile surface-mount protection.
Technical Context
The 1PMT7.0AT1G operates as a unidirectional Zener-based TVS, conducting only during reverse overvoltage events above its breakdown threshold (VBR = 7.78–8.6 V @ 10 mA). Its clamping action limits transient energy delivered to downstream circuitry by diverting surge current to ground via the cathode terminal.
Thermal design relies on its integral heatsink tabs and full metallic cathode tab (RJcathode = 3.2 °C/W), enabling high pulse power dissipation (200 W @ 10/1000 µs) despite its 8.45 mm² footprint and 1.1 mm height. It meets Class 3 HBM ESD rating (>16 kV) and is JEDEC DO-216AA registered.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 7.0 V - Maximum continuous reverse operating voltage before clamping begins; must be ≥ system nominal DC rail voltage. |
| VBR @ IT | 7.78–8.6 V @ 10 mA - Breakdown voltage range defining turn-on threshold; ensures reliable triggering without false trips. |
| VC @ IPP | 12 V @ 16.7 A - Maximum clamped voltage during 10/1000 µs surge; determines worst-case stress on protected IC inputs. |
| PPK | 200 W @ 10/1000 µs - Peak pulse power handling; defines single-event surge robustness for telecom/data line transients. |
| Response Time | <1 ns - Enables suppression of fast-rising ESD and lightning-induced edges before sensitive logic is damaged. |
| ESD Rating | >16 kV HBM - Meets IEC 61000-4-2 Level 4 immunity requirements for handheld and portable device interfaces. |
| Package | POWERMITE® (DO-216AA) - 2-pin SMD with full metallic cathode tab; delivers SMA-level thermal performance in 50% smaller area. |
Pinout & Package
Package: POWERMITE® (JEDEC DO-216AA), void-free thermosetting plastic case with full metallic cathode tab and integral heatsink/locking tabs. Dimensions: 2.05 × 2.18 × 1.1 mm (L × W × H), footprint area 8.45 mm².
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Transient current sink / clamping node | Connected to system ground or low-impedance return path; carries full surge current; serves as primary thermal interface via metallic tab. |
| 2 (Anode) | Protected line connection | Connected to the signal or power line being protected; reverse-biased during normal operation; forward-conducts only during fault conditions. |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile POWERMITE® package | 1.1 mm max height enables use in ultra-thin mobile devices where SMA or SOD-123 are too tall. |
| Full metallic cathode tab | Reduces thermal resistance to 3.2 °C/W, allowing sustained 200 W pulse handling without PCB copper pour augmentation. |
| Class 3 HBM ESD rating | Withstands >16 kV contact discharge per IEC 61000-4-2, eliminating need for secondary ESD stages in USB/USB-C ports. |
| Fast <1 ns response | Clamps sub-nanosecond ESD events before propagation into high-speed data receivers (e.g., USB 2.0 PHYs, UART lines). |
| Pb-free & RoHS compliant | Meets global environmental compliance mandates without derating or reliability penalties; compatible with standard SnAgCu reflow profiles. |
Applications
| Smartphone Power Rail Protection | USB-C Port ESD Clamping |
|---|---|
Use Scenario: Protecting 5 V USB power delivery (VBUS) and 3.3 V system rails in compact smartphones against cable-discharge events and charger surges. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed between rail and chassis ground; clamps transients within nanoseconds while remaining non-conductive during normal operation. Use Value: Prevents latch-up or permanent damage to PMICs and baseband processors by limiting VBUS overshoot to ≤12 V during 16.7 A surges. | Use Scenario: Safeguarding USB-C CC, D+/D−, and VCONN lines against hot-plug ESD and electrostatic coupling from adjacent connectors. IC Role / Device Role / Timing Role: Discrete TVS element mounted directly at connector footprint; provides first-line defense with sub-1 ns reaction to ±15 kV HBM discharges. Use Value: Maintains signal integrity by limiting clamping voltage to 12 V-well below USB 2.0 receiver absolute max rating (6.5 V)-without adding capacitance that degrades eye diagram. |
| Industrial Sensor Node Power Input | Point-of-Sale Terminal Keypad Interface |
Use Scenario: Shielding 12 V or 24 V DC input of battery-powered wireless sensor nodes from induced surges in factory environments. IC Role / Device Role / Timing Role: Primary overvoltage protector on main power entry; shunts multi-hundred-watt transients (e.g., inductive switch-off) to ground via low-inductance layout. Use Value: Enables field-deployable reliability with 200 W 10/1000 µs rating and -55°C to +150°C operating range-no derating required up to 125°C ambient. | Use Scenario: Hardening membrane keypad matrix lines (row/column) in retail terminals against user-hand ESD and AC mains coupling. IC Role / Device Role / Timing Role: Low-capacitance (<100 pF), low-leakage TVS on each keypad trace; blocks >16 kV discharges without false keypresses or firmware lockup. Use Value: Eliminates field returns due to keypad failure by clamping transients before microcontroller GPIOs exceed 5.5 V absolute maximum rating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ7.0A | Same VRWM (7.0 V) and VC (12 V), but SMA package (2.5 mm height, 2× larger footprint); RJA = 100 °C/W vs. 248 °C/W for 1PMT7.0AT1G. | Requires more PCB area and offers lower thermal efficiency; suitable where height is not constrained but cost is critical. | Select SMAJ7.0A only if board stack height allows ≥2.5 mm and thermal margin is sufficient without heatsinking. |
| 1.5SMC7.0A | Higher PPK (1500 W), but SMC package (7.1 mm × 6.2 mm × 2.6 mm); 10× larger footprint and 2.4× taller than 1PMT7.0AT1G. | Targeted at industrial AC mains or PoE port protection-not portable DC rail protection-due to size and thermal mass. | Choose 1.5SMC7.0A only for high-energy AC-coupled surges where 1PMT7.0AT1G's 200 W rating is insufficient. |
Compared with SMAJ7.0A and 1.5SMC7.0A, the 1PMT7.0AT1G delivers identical electrical protection in a 50% smaller footprint and 1.1 mm profile-critical for space-constrained portable designs-while maintaining full thermal capability via its metallic cathode tab, unlike the plastic-bodied alternatives.
Availability
1PMT7.0AT1G is available at Aetrix Electronics and suitable for smartphone power rail protection, USB-C port ESD clamping, and industrial sensor node power input requiring stable component supply across high-mix, low-volume production runs.
Supply support for 1PMT7.0AT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The 1PMT7.0AT1G belongs to the 1PMT5.0AT1G/T3G Series of Zener transient voltage suppressors, engineered specifically for space-constrained, high-reliability DC line protection in portable and battery-powered electronics.
FAQ
What is the working peak reverse voltage (VRWM) of the 1PMT7.0AT1G?
The 1PMT7.0AT1G has a VRWM of 7.0 V, meaning it remains non-conductive up to this DC or continuous peak reverse voltage. This value is selected to match common 5 V and 3.3 V system rails while providing margin above nominal voltage to avoid leakage or premature conduction. The 1PMT7.0AT1G datasheet confirms VRWM is guaranteed at 7.0 V with no upper tolerance deviation.
How does the clamping voltage of the 1PMT7.0AT1G compare to its breakdown voltage?
The 1PMT7.0AT1G has a breakdown voltage (VBR) range of 7.78–8.6 V at 10 mA test current, while its maximum clamping voltage (VC) is 12 V at 16.7 A peak pulse current. This 4.4 V differential reflects the Zener dynamic impedance under surge conditions and ensures protected ICs see no more than 12 V during worst-case transients. The 1PMT7.0AT1G maintains this clamping performance across its full operating temperature range.
Is the 1PMT7.0AT1G suitable for protecting high-speed data lines like USB 2.0?
Yes-the 1PMT7.0AT1G is appropriate for USB 2.0 data line protection when placed with minimal trace length and proper grounding. Its low capacitance (typically <100 pF at 0 V bias) avoids signal integrity degradation, and its <1 ns response time prevents ESD from reaching the PHY. However, for USB 3.x or HDMI, dedicated low-capacitance arrays are preferred. The 1PMT7.0AT1G is optimized for power and low-speed control lines.
What is the thermal resistance from junction to cathode tab for the 1PMT7.0AT1G?
The 1PMT7.0AT1G has a junction-to-cathode thermal resistance (RJcathode) of 3.2 °C/W, measured at the full metallic cathode tab. This low value enables efficient heat transfer during high-energy pulses and supports its 200 W peak power rating without external heatsinking. The 1PMT7.0AT1G achieves this via its POWERMITE® package's integral heatsink design, distinct from standard plastic SMD packages.
Does the 1PMT7.0AT1G meet RoHS and lead-free requirements?
Yes-the "G" suffix in 1PMT7.0AT1G explicitly denotes a Pb-free, RoHS-compliant package. The device uses lead-free terminations and complies with EU RoHS Directive 2011/65/EU and China RoHS. It is qualified for standard SnAgCu reflow profiles up to 260°C for 10 seconds, and all external surfaces are corrosion resistant and readily solderable per the official 1PMT5.0AT1G/T3G Series datasheet.
1PMT7.0AT1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- DO-216AA
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 7V
- Voltage - Breakdown (Min):
- 7.78V
- Voltage - Clamping (Max) @ Ipp:
- 12V
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- 1000W (1kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Powermite
1PMT7.0AT1G FAQ
1.How can I place an order for 1PMT7.0AT1G through Aetrix?
Please submit a Request for Quotation (RFQ) for 1PMT7.0AT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1PMT7.0AT1G reliable?
The price and inventory of 1PMT7.0AT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1PMT7.0AT1G is usually 5 days.
3.What payment methods are accepted for 1PMT7.0AT1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1PMT7.0AT1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1PMT7.0AT1G?
1PMT7.0AT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1PMT7.0AT1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1PMT7.0AT1G?
For technical support, including 1PMT7.0AT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1PMT7.0AT1G requirements.
6.How does Aetrix verify that 1PMT7.0AT1G is sourced from the original manufacturer or authorized distributors?
All 1PMT7.0AT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1PMT7.0AT1G meets industry standards.
7.What is the process for return or replacement of 1PMT7.0AT1G?
All 1PMT7.0AT1G units undergo pre-shipment inspection (PSI). If there is an issue with 1PMT7.0AT1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1PMT7.0AT1G part is unused and in its original packaging.
Return procedure for 1PMT7.0AT1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1PMT7.0AT1G Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
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