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onsemi 1PMT7.0AT3G

Part No.:
1PMT7.0AT3G
Manufacturer:
onsemi
Category:
TVS Diodes
Package:
DO-216AA
Datasheet:
Aetrix1PMT7.0AT3G.pdf
Description:
TVS DIODE 7VWM 12VC POWERMITE
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,964

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Product details

Overview

1PMT7.0AT3G from onsemi is a unidirectional Zener transient voltage suppressor (TVS) in the POWERMITE® package, designed for clamping high-energy transients in low-voltage DC circuits. It features a 7.0 V working peak reverse voltage (VRWM), 12 V maximum clamping voltage at 16.7 A peak pulse current, <1 ns response time, 200 W peak power rating (10/1000 µs), and ESD rating >16 kV per HBM - ideal for protecting USB ports, I/O lines, and power rails in portable electronics.

For engineers reviewing the 1PMT7.0AT3G datasheet, pinout, applications, or equivalent options, key selection criteria include VRWM matching system operating voltage, clamping voltage margin relative to IC absolute maximum ratings, thermal performance under repeated surge duty, and PCB space constraints where its 8.45 mm² footprint and 1.1 mm height provide critical advantage.

Technical Context

The 1PMT7.0AT3G operates as a unidirectional Zener-based TVS diode, conducting only during reverse overvoltage events above its breakdown threshold (VBR = 7.78–8.6 V at 10 mA). Its clamping action relies on avalanche multiplication with low dynamic impedance, enabling rapid energy diversion away from protected circuitry.

Thermally, it leverages a full metallic cathode tab and integral heatsink tabs to achieve 3.2 °C/W junction-to-cathode thermal resistance, supporting sustained operation up to 150°C junction temperature. Its POWERMITE (DO-216AA) package delivers SMA-equivalent thermal performance in 50% less board area.

Key Specifications

Parameter Value and Actual Design Meaning
Working Peak Reverse Voltage (VRWM)7.0 V - sets minimum system operating voltage compatibility; must be ≥ nominal rail voltage to avoid leakage conduction during normal operation
Breakdown Voltage (VBR) @ 10 mA7.78–8.6 V - defines precise turn-on threshold; ensures reliable triggering before downstream IC damage thresholds
Clamping Voltage (VC) @ 16.7 A12.0 V - maximum voltage seen by protected circuit during 10/1000 µs surge; determines safety margin vs. IC absolute max rating
Peak Pulse Power (10/1000 µs)200 W - quantifies single-event surge handling capability; sufficient for IEC 61000-4-5 Level 3 (1 kV/2 Ω) transients
Response Time<1 ns - enables protection of high-speed interfaces (e.g., USB 2.0, HDMI) without signal distortion or timing skew
ESD Rating (HBM)>16 kV - exceeds IEC 61000-4-2 Level 4 (15 kV contact), suitable for handheld device button/connector protection
PackagePOWERMITE® (DO-216AA) - 1.1 mm height, 8.45 mm² footprint, JEDEC-registered surface-mount package with full-metal cathode tab for thermal management

Pinout & Package

1PMT7.0AT3G uses the POWERMITE® (DO-216AA) package: a 2-terminal surface-mount device with a full metallic cathode tab (Pin 1) and anode lead (Pin 2), featuring integral heatsink/locking tabs and polarity band indicating cathode.

Pin/Terminal Circuit Role Design Meaning
1 (Cathode)Transient current return path / thermal interfaceFull metallic bottom serves as primary heat sink; must be soldered to large copper pour for optimal thermal performance
2 (Anode)Transient current input / signal referenceConnected to protected line; low-inductance layout required to preserve sub-ns response time

Key Features

Feature Design Value
Low-profile POWERMITE® package1.1 mm max height and 8.45 mm² footprint enable placement in ultra-thin consumer devices where SMA or SMC packages cannot fit
Integral heatsink/locking tabsMechanically anchors device during reflow and improves thermal transfer to PCB, reducing junction temperature rise by ~30% vs. standard SOD-123
Full metallic cathode bottomEliminates flux entrapment risk and provides direct thermal path to ground plane, enabling 3.2 °C/W RθJC performance
JEDEC DO-216AA registrationEnsures consistent mechanical dimensions and soldering compatibility across manufacturers and assembly processes

Applications

USB 2.0 Data Lines Smartphone Charging Port

Use Scenario: Protecting D+ and D− lines against ESD and cable discharge events in mobile accessories and host controllers.

IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed directly at connector, shunting transients before they reach USB PHY or controller.

Use Value: 12 V clamping voltage maintains signal integrity below USB 2.0 eye diagram limits while surviving >16 kV HBM strikes without degradation.

Use Scenario: Safeguarding 5 V USB power input against hot-plug surges, lightning-induced ring waves, and load dump in portable chargers.

IC Role / Device Role / Timing Role: Primary overvoltage clamp on VBUS rail, coordinated with upstream current-limiting ICs to prevent latch-up or thermal runaway.

Use Value: 200 W peak power rating handles IEC 61000-4-5 combination wave surges without failure, while 1.1 mm height allows integration beneath compact USB-C connectors.

Industrial Sensor I/O Point-of-Sale Terminal Keypad

Use Scenario: Shielding 3.3 V or 5 V analog/digital sensor inputs (e.g., RS-485, CAN, I²C) from induced transients in factory floor environments.

IC Role / Device Role / Timing Role: Localized transient suppression at sensor node PCB edge, minimizing trace inductance between TVS and protected pins.

Use Value: Sub-1 ns response ensures clamping occurs before transient energy couples into sensitive ADC front-ends or microcontroller GPIOs.

Use Scenario: ESD protection for membrane keypad matrix lines exposed to frequent human contact in retail terminals.

IC Role / Device Role / Timing Role: Low-capacitance (<50 pF at 0 V bias) unidirectional TVS placed inline with each row/column trace to prevent false keypresses.

Use Value: 7.0 V VRWM avoids leakage at 5 V logic levels, while >16 kV HBM rating eliminates field failures from operator static discharge.

Equivalent & Alternatives

The following parts are listed as comparable options for similar unidirectional TVS diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ7.0A (onsemi)Same VRWM and VC, but SMA package (2.5 mm height, 2× larger footprint); higher RθJA (248 °C/W vs. 23 °C/W junction-to-tab)Acceptable where board height >2 mm and thermal budget permits higher junction temp riseSelect when existing SMA footprint is fixed and thermal derating can accommodate lower power density
1.5SMC7.0A (onsemi)Higher 1500 W peak power (10/1000 µs), but SMC package (7.1 mm × 6.2 mm); 2.3× taller (2.6 mm) and 5× larger footprint than POWERMITESuitable for industrial power supplies requiring multi-kW surge handling, not space-constrained portable designsChoose only when surge energy exceeds 200 W and PCB real estate is unconstrained

Compared with SMAJ7.0A and 1.5SMC7.0A, the 1PMT7.0AT3G delivers identical electrical protection in a package that reduces board area by 50% and height by 56%, enabling miniaturization without sacrificing clamping performance or thermal reliability - critical for next-generation wearables and IoT edge nodes.

Availability

1PMT7.0AT3G is available at Aetrix Electronics and suitable for USB interface protection, smartphone charging port hardening, and industrial sensor I/O conditioning requiring stable component supply, RoHS-compliant packaging, and consistent surge performance across production lots.

Supply support for 1PMT7.0AT3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (Nasdaq: ON) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The 1PMT7.0AT3G belongs to onsemi's POWERMITE® TVS diode family, engineered specifically to replace legacy SMA/SMB packages in space-constrained, thermally demanding transient protection applications - prioritizing miniaturization without compromising surge robustness or thermal dissipation.

FAQ

What is the working peak reverse voltage (VRWM) of the 1PMT7.0AT3G?

The 1PMT7.0AT3G has a working peak reverse voltage (VRWM) of 7.0 V. This value defines the maximum continuous DC or peak AC voltage the device can withstand without entering conduction. It is selected to match or slightly exceed the nominal operating voltage of the protected circuit - for example, 1PMT7.0AT3G is commonly used on 5 V USB VBUS lines where 7.0 V VRWM provides adequate margin above steady-state voltage while ensuring low leakage current below the clamping threshold.

How does the 1PMT7.0AT3G compare to SMAJ7.0A in terms of thermal performance?

The 1PMT7.0AT3G achieves significantly better thermal performance than SMAJ7.0A due to its POWERMITE® package design: it offers 3.2 °C/W junction-to-cathode thermal resistance (RθJC) versus SMAJ7.0A's 248 °C/W junction-to-ambient (RθJA). This means 1PMT7.0AT3G transfers heat directly through its full-metal cathode tab to the PCB, enabling higher sustained power handling and lower junction temperature rise - a critical advantage in densely packed layouts where airflow and heatsinking are limited.

Is the 1PMT7.0AT3G suitable for bidirectional transient protection?

No, the 1PMT7.0AT3G is a unidirectional TVS diode and is not suitable for bidirectional protection. It conducts only during reverse-biased overvoltage events - i.e., when the cathode is driven positive relative to the anode. For AC lines or signals that swing both above and below ground (e.g., RS-232, audio lines), a bidirectional variant such as 1PMT7.0BT3G (not 1PMT7.0AT3G) must be used. Using 1PMT7.0AT3G on bidirectional signals risks forward conduction and potential damage during negative excursions.

What is the maximum clamping voltage of the 1PMT7.0AT3G at its rated peak pulse current?

The 1PMT7.0AT3G has a maximum clamping voltage (VC) of 12.0 V at its rated peak pulse current of 16.7 A (10/1000 µs waveform). This value represents the highest voltage that will appear across the protected circuit during a standardized surge event. Designers use this parameter to verify that 12.0 V remains safely below the absolute maximum voltage rating of downstream ICs - for instance, ensuring compatibility with 13.2 V-rated 5 V logic families or USB 2.0 PHYs with 12.5 V tolerance.

Does the 1PMT7.0AT3G meet RoHS and lead-free requirements?

Yes, the 1PMT7.0AT3G is Pb-free and RoHS compliant, as confirmed by onsemi's documentation and marking suffix "G". The device uses lead-free terminations and conforms to Directive 2011/65/EU. Its POWERMITE® package is qualified for standard lead-free reflow profiles (peak temperature 260°C for 10 seconds), and the full metallic cathode bottom eliminates flux entrapment - supporting reliable, void-free solder joints in high-volume manufacturing environments.

1PMT7.0AT3G Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Package/Case:
DO-216AA
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
7V
Voltage - Breakdown (Min):
7.78V
Voltage - Clamping (Max) @ Ipp:
12V
Current - Peak Pulse (10/1000µs):
-
Power - Peak Pulse:
1000W (1kW)
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
Powermite

1PMT7.0AT3G FAQ

1.How can I place an order for 1PMT7.0AT3G through Aetrix?

Please submit a Request for Quotation (RFQ) for 1PMT7.0AT3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1PMT7.0AT3G reliable?

The price and inventory of 1PMT7.0AT3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1PMT7.0AT3G is usually 5 days.

3.What payment methods are accepted for 1PMT7.0AT3G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1PMT7.0AT3G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1PMT7.0AT3G?

1PMT7.0AT3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1PMT7.0AT3G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1PMT7.0AT3G?

For technical support, including 1PMT7.0AT3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1PMT7.0AT3G requirements.

6.How does Aetrix verify that 1PMT7.0AT3G is sourced from the original manufacturer or authorized distributors?

All 1PMT7.0AT3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1PMT7.0AT3G meets industry standards.

7.What is the process for return or replacement of 1PMT7.0AT3G?

All 1PMT7.0AT3G units undergo pre-shipment inspection (PSI). If there is an issue with 1PMT7.0AT3G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1PMT7.0AT3G part is unused and in its original packaging.

Return procedure for 1PMT7.0AT3G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

1PMT7.0AT3G Tags

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