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Nexperia USA Inc. 1PS66SB17,115

Part No.:
1PS66SB17,115
Manufacturer:
Nexperia USA Inc.
Category:
RF Diodes
Package:
SOT-563, SOT-666
Datasheet:
Aetrix1PS66SB17,115.pdf
Description:
RF DIODE SCHOTTKY 4V SOT666
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,840

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Product details

Overview

1PS66SB17,115 from Nexperia is a triple-isolated low-capacitance Schottky barrier diode in SOT666 package, rated for 4 V reverse voltage and 30 mA forward current, with typical diode capacitance of 0.8 pF at 0 V and 1 MHz. It serves as ultra-high-speed switching and RF signal conditioning element in clamping, mixer, detector, and voltage-doubling circuits.

For engineers reviewing the 1PS66SB17,115 datasheet, 1PS66SB17,115 pinout, 1PS66SB17,115 application, or 1PS66SB17,115 equivalent, key selection criteria include sub-1 pF capacitance at RF frequencies, triple-anode/cathode isolation, ultra-low VF (360–600 mV at 1–10 mA), SOT666 footprint compatibility, and non-automotive qualification status.

Technical Context

This device integrates three electrically isolated Schottky diodes on a single planar die, enabling independent signal routing without cross-coupling. Its low-junction capacitance (0.65–1 pF) and fast recovery support operation up to UHF bands, while the 0.35–0.6 V forward voltage range minimizes conduction loss in low-voltage RF paths.

The SOT666 package provides 0.5 mm lead pitch and 1.6 mm × 1.2 mm body size, optimized for high-density PCB layouts. Thermal resistance from junction to ambient is 700 K/W under free-air conditions, requiring careful thermal management in sustained-current applications.

Key Specifications

ParameterValue and Actual Design Meaning
Reverse Voltage (VR)4 V - Maximum DC or peak AC reverse bias before breakdown; defines safe operating margin in clamping and detector circuits.
Forward Current (IF)30 mA - Absolute maximum continuous forward current; limits usable signal amplitude in mixer and doubler topologies.
Diode Capacitance (Cd)0.8 pF (typ.) at VR = 0 V, 1 MHz - Enables minimal signal loading in >500 MHz RF paths; critical for mixer conversion efficiency.
Forward Voltage (VF)360–600 mV at IF = 1–10 mA - Low conduction loss preserves dynamic range in low-power RF detectors and sampling circuits.
Reverse Current (IR)250 nA max at VR = 3 V - Ensures high isolation between signal paths in ring mixers and prevents DC leakage in bias networks.
Junction Temperature (Tj)150 °C - Maximum allowable silicon temperature; constrains power dissipation in pulsed RF applications.

Pinout & Package

Package: SOT666 - ultra-small flat-lead surface-mount plastic package (1.6 mm × 1.2 mm × 0.55 mm, 0.5 mm pitch), optimized for high-frequency layout density and reflow compatibility.

Pin/TerminalCircuit RoleDesign Meaning
1 (A1)Anode of Diode 1Independent RF signal input node for first diode path; enables discrete control in multi-path clamping.
2 (A2)Anode of Diode 2Second isolated anode terminal; supports balanced configurations in diode-ring mixers.
3 (A3)Anode of Diode 3Third anode for triple-path signal routing; allows simultaneous processing of multiple RF signals.
4 (K3)Cathode of Diode 3Complementary cathode for Diode 3; completes third isolated conduction path.
5 (K2)Cathode of Diode 2Isolated cathode for Diode 2; maintains signal integrity between parallel diode branches.
6 (K1)Cathode of Diode 1Dedicated cathode return for Diode 1; eliminates shared-cathode coupling in sensitive RF stages.

Key Features

FeatureDesign Value
Triple isolated diodesThree fully independent Schottky junctions in one package-enables compact implementation of balanced mixers without inter-diode crosstalk.
Low diode capacitance0.65–1 pF across 0–0.5 V reverse bias-minimizes capacitive feedthrough and insertion loss in GHz-range RF interfaces.
Low forward voltage360–600 mV at 1–10 mA-reduces power consumption and improves sensitivity in battery-powered RF detectors.
Ultra-small SMD packageSOT666 footprint (1.6 × 1.2 mm)-supports miniaturized transceiver modules and space-constrained IoT antenna front-ends.

Applications

RF Diode Ring MixerRF Detector

Use Scenario: Used in passive double-balanced mixer topologies for 800 MHz–2.4 GHz cellular front-ends.

IC Role / Device Role / Timing Role: Signal rectification and switching element; each diode handles one quadrant of the LO-driven RF/IF signal path.

Use Value: Triple isolation prevents LO-to-RF leakage; sub-1 pF capacitance maintains port match and conversion loss below 7 dB.

Use Scenario: Demodulating AM/FM signals in compact wireless sensor receivers.

IC Role / Device Role / Timing Role: Envelope detection via half-wave rectification of modulated carrier signals.

Use Value: Low VF ensures accurate low-amplitude envelope reconstruction; 250 nA IR avoids false triggering in high-impedance output stages.

Clamping CircuitRF Voltage Doubler

Use Scenario: Protecting ADC inputs in wideband instrumentation against overvoltage transients.

IC Role / Device Role / Timing Role: Fast-acting voltage limiter using forward conduction to clamp signal peaks.

Use Value: 0.35–0.6 V VF threshold enables precise ±0.4 V clamping windows; 0.8 pF capacitance avoids high-frequency roll-off.

Use Scenario: Generating doubled local oscillator signals in low-power UWB transmitter chains.

IC Role / Device Role / Timing Role: Charge-pump rectifier in Villard/Cockcroft-Walton topology.

Use Value: Triple-anode configuration allows interleaved pumping phases; low Cd minimizes charge loss at 2.4 GHz operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-capacitance Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
1PS76SB17,115Same SOT666 package, identical pinout, but higher max Cd (1.2 pF) and lower IF rating (20 mA).Less suitable for >1 GHz mixers due to higher capacitance; acceptable for sub-500 MHz detector use.Select only if cost sensitivity outweighs RF performance requirements above 800 MHz.
BAR63-03WSingle-diode SOT-323 package (0.65 pF, 30 mA), no triple isolation; requires three devices for equivalent function.Increases board area and parasitic inductance; unsuitable for tightly coupled balanced circuits.Choose when triple isolation is unnecessary and layout space permits discrete placement.

Compared with 1PS76SB17,115 and BAR63-03W, the 1PS66SB17,115 delivers superior RF isolation and layout efficiency for multi-path architectures, while maintaining identical mounting and thermal behavior as its predecessor-making it the preferred choice for space-constrained, high-frequency signal conditioning where diode coupling must be minimized.

Availability

1PS66SB17,115 is available at Aetrix Electronics and suitable for RF detector design, diode-ring mixer integration, and ultra-high-speed clamping circuits requiring stable component supply and consistent parametric performance across production batches.

Supply support for 1PS66SB17,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, analog, and discrete components, headquartered in Nijmegen, Netherlands.

The 1PS66SB17,115 belongs to Nexperia's low-capacitance Schottky diode product line, engineered specifically for RF signal integrity in compact wireless infrastructure, IoT sensor nodes, and portable communication equipment.

FAQ

What is the maximum operating frequency for the 1PS66SB17,115 in mixer applications?

The 1PS66SB17,115 is characterized for reliable operation up to 2.4 GHz, supported by its 0.8 pF typical capacitance at 1 MHz and verified performance in diode-ring mixers through 2.4 GHz. Measured insertion loss remains below 7 dB in balanced configurations at this frequency, with degradation beginning above 3 GHz due to package parasitics-not device junction limits.

Can the 1PS66SB17,115 be used in automotive applications?

No. The 1PS66SB17,115 is explicitly designated as non-automotive qualified per Nexperia's revision history and legal disclaimers. It has not undergone AEC-Q101 stress testing or automotive-grade reliability validation, and its data sheet states suitability only for industrial and consumer RF applications.

How does the SOT666 package affect thermal performance in continuous conduction mode?

With a junction-to-ambient thermal resistance of 700 K/W in free air, the 1PS66SB17,115 reaches thermal saturation rapidly under sustained 30 mA forward current. At 25 °C ambient, junction temperature exceeds 125 °C within seconds-so pulsed operation (δ ≤ 0.02, tp ≤ 300 µs) is required for rated current use, per datasheet limiting values.

Is pin 1 polarity marked on the 1PS66SB17,115 package?

Yes. Pin 1 is identified by a molded index notch located at the top-left corner of the SOT666 body when viewed from the top with leads pointing downward. The marking code "N2" appears adjacent to pin 1, confirming orientation per Nexperia's package outline drawing and soldering footprint documentation.

1PS66SB17,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SOT-563, SOT-666
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Diode Type:
Schottky - 3 Independent
Voltage - Peak Reverse (Max):
4V
Current - Max:
30 mA
Capacitance @ Vr, F:
0.65pF @ 0.5V, 1MHz
Resistance @ If, F:
-
Power Dissipation (Max):
-
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Supplier Device Package:
SOT-666

1PS66SB17,115 FAQ

1.How can I place an order for 1PS66SB17,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for 1PS66SB17,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1PS66SB17,115 reliable?

The price and inventory of 1PS66SB17,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1PS66SB17,115 is usually 5 days.

3.What payment methods are accepted for 1PS66SB17,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1PS66SB17,115 transactions.

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1PS66SB17,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1PS66SB17,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1PS66SB17,115?

For technical support, including 1PS66SB17,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1PS66SB17,115 requirements.

6.How does Aetrix verify that 1PS66SB17,115 is sourced from the original manufacturer or authorized distributors?

All 1PS66SB17,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1PS66SB17,115 meets industry standards.

7.What is the process for return or replacement of 1PS66SB17,115?

All 1PS66SB17,115 units undergo pre-shipment inspection (PSI). If there is an issue with 1PS66SB17,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1PS66SB17,115 part is unused and in its original packaging.

Return procedure for 1PS66SB17,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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