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NXP Semiconductors 1PS66SB82115

Part No.:
1PS66SB82115
Manufacturer:
NXP Semiconductors
Category:
RF Diodes
Package:
SOT-563, SOT-666
Datasheet:
Aetrix1PS66SB82115.pdf
Description:
NOW NEXPERIA 1PS66SB82 - MIXER D
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,430

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Product details

Overview

1PS66SB82115 from Nexperia is a triple isolated Schottky barrier diode in SOT666 package, rated for 15 V reverse voltage and 30 mA forward current, with ultra-low 1 pF capacitance at 0 V and 1 MHz-enabling RF detector, diode ring mixer, and ultra-high-speed clamping applications.

For engineers reviewing the 1PS66SB82115 datasheet, 1PS66SB82115 pinout, 1PS66SB82115 application, or 1PS66SB82115 equivalent, this page delivers verified electrical specs, terminal mapping, thermal resistance (700 K/W), forward voltage (700 mV @ 30 mA), and real-world use cases in RF and digital signal conditioning circuits.

Technical Context

This device integrates three electrically isolated Schottky diodes in a single compact SOT666 package, optimized for high-frequency operation via low junction capacitance (1 pF) and low forward voltage (340 mV @ 1 mA). Its epitaxial construction ensures stable performance up to 125 °C junction temperature.

The triple-diode configuration supports independent anode/cathode routing per diode-pin 1–3 are anodes, pins 4–6 are cathodes-with no shared terminals. Thermal resistance of 700 K/W (junction-to-ambient, free air) reflects its suitability for low-power RF front-end and logic-level clamping where self-heating must be minimized.

Key Specifications

ParameterValue and Actual Design Meaning
Reverse Voltage (VR)15 V - supports signal clamping and RF detection in 12 V systems without breakdown risk
Forward Current (IF)30 mA continuous - sufficient for low-power logic interface and detector biasing
Diode Capacitance (Cd)1 pF @ 0 V, 1 MHz - enables >1 GHz small-signal RF operation with minimal loading
Forward Voltage (VF)700 mV @ 30 mA - reduces power loss and improves efficiency in high-speed switching paths
Differential Resistance (rdif)12 Ω @ 5 mA - ensures low insertion loss in RF mixer and detector signal paths
Junction Temperature (Tj)125 °C max - allows reliable operation in industrial ambient environments

Pinout & Package

SOT666 plastic surface-mounted package (6 leads), dimensions: 1.7 × 1.3 × 0.5 mm (L × W × H), with standard reflow soldering compatibility only.

Pin/TerminalCircuit RoleDesign Meaning
1Anode (Diode 1)Independent input node for first Schottky diode; routed separately for discrete clamping or mixing functions
2Anode (Diode 2)Independent input node for second Schottky diode; enables dual-path RF signal processing
3Anode (Diode 3)Independent input node for third Schottky diode; supports triple-function circuits like balanced mixers
4Cathode (Diode 3)Return path for Diode 3; isolated from other cathodes to prevent cross-coupling
5Cathode (Diode 2)Return path for Diode 2; maintains signal integrity in differential or multi-channel topologies
6Cathode (Diode 1)Return path for Diode 1; enables independent biasing and termination per diode

Key Features

FeatureDesign Value
Triple isolated Schottky diodesEnables independent signal routing across three channels without internal coupling-critical for balanced RF mixers
1 pF diode capacitanceMinimizes capacitive loading on high-frequency traces, preserving bandwidth in >500 MHz detector circuits
700 mV VF @ 30 mAReduces forward conduction loss in low-voltage clamping, improving signal fidelity in 3.3 V logic interfaces
SOT666 package0.5 mm height and 1.7 mm length enable dense RF layout while maintaining thermal isolation between diodes

Applications

RF DetectorDiode Ring Mixer

Use Scenario: Detecting amplitude-modulated RF signals in receiver front-ends operating at 433 MHz or 915 MHz ISM bands.

IC Role / Device Role / Timing Role: Signal rectification element converting RF envelope to baseband DC/low-frequency output.

Use Value: 1 pF capacitance and 12 Ω differential resistance minimize signal attenuation and distortion during demodulation.

Use Scenario: Constructing passive double-balanced mixers for frequency translation in transceivers and spectrum analyzers.

IC Role / Device Role / Timing Role: Nonlinear switching element enabling LO-driven signal multiplication with high port-to-port isolation.

Use Value: Triple isolated structure allows full implementation of balanced topology using one package-reducing layout area and parasitic mismatch.

Ultra-High-Speed ClampingLogic-Level Signal Conditioning

Use Scenario: Protecting high-speed data lines (e.g., USB 2.0, LVDS) from ESD-induced overshoot and undershoot transients.

IC Role / Device Role / Timing Role: Fast-turn-on clamp limiting voltage excursions within ±0.7 V of rail.

Use Value: 340 mV VF @ 1 mA ensures sub-nanosecond response and minimal impact on signal rise/fall times.

Use Scenario: Level-shifting and waveform shaping of 1.8 V/3.3 V logic signals in FPGA I/O banks and microcontroller peripherals.

IC Role / Device Role / Timing Role: Bidirectional voltage limiter defining logic high/low thresholds and suppressing ringing.

Use Value: Low 700 mV forward drop preserves noise margin while 30 mA rating handles transient surge currents.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
1PS88SB82SOT363 (SC-88) package; identical electrical specs (15 V, 30 mA, 1 pF), but higher thermal resistance (416 K/W vs. 700 K/W)Better suited for space-constrained layouts where footprint size matters more than thermal dissipationSelect 1PS88SB82 when board area is critical and ambient temperature remains below 85 °C
RB050M-30Single Schottky diode in SOD-523; 30 V VR, 100 mA IF, Cd ≈ 1.2 pF - not triple-isolated, different pin count and packageApplicable only for single-diode roles; requires three separate placements to replicate 1PS66SB82115 functionalityChoose RB050M-30 only when triple integration is unnecessary and higher current headroom is required

Compared with 1PS88SB82 and RB050M-30, the 1PS66SB82115 uniquely delivers triple isolation in the smallest possible height (0.5 mm) while maintaining 15 V rating and 1 pF capacitance-making it optimal for stacked RF modules and miniaturized detector assemblies where vertical clearance and channel independence are design constraints.

Availability

1PS66SB82115 is available at Aetrix Electronics and suitable for RF detector designs, diode ring mixer implementations, and ultra-high-speed clamping circuits requiring stable component supply and consistent parametric performance across production batches.

Supply support for 1PS66SB82115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET devices for automotive, industrial, and consumer applications.

The 1PS66SB82115 belongs to Nexperia's low-capacitance Schottky diode product line, engineered specifically for RF signal processing and high-speed digital protection where minimal parasitic capacitance and fast switching are essential.

FAQ

What is the maximum reverse voltage rating for the 1PS66SB82115?

The 1PS66SB82115 has a continuous reverse voltage (VR) rating of 15 V, as specified in the Absolute Maximum Ratings table. This value is confirmed across all operating temperatures up to 125 °C junction temperature and defines the upper limit for safe non-breakdown operation in clamping or detector configurations.

How many diodes are integrated into the 1PS66SB82115 and how are they configured?

The 1PS66SB82115 integrates three electrically isolated Schottky diodes in a single SOT666 package. Pins 1–3 serve as individual anodes, and pins 4–6 serve as corresponding cathodes-no internal connection exists between diodes, enabling fully independent signal paths.

What is the typical diode capacitance of the 1PS66SB82115 and under what conditions is it measured?

The 1PS66SB82115 exhibits a typical diode capacitance (Cd) of 1 pF, measured at 0 V reverse bias and 1 MHz frequency per Figure 4 in the official Nexperia datasheet. This value is consistent across production lots and critical for RF impedance matching and bandwidth preservation.

Can the 1PS66SB82115 be used in reflow soldering processes?

Yes-the 1PS66SB82115 is qualified for reflow soldering only, as explicitly stated in Section 6 of the Nexperia datasheet. Wave or hand soldering is not recommended due to thermal stress risks, and standard SOT666 reflow profiles must be followed to ensure reliability.

What marking code identifies the 1PS66SB82115 on the physical package?

The 1PS66SB82115 is marked with the code "N5" on its top surface, as documented in Table 5 of the Nexperia datasheet. This laser-marked identifier is standardized across all production units and corresponds exclusively to the 1PS66SB82 variant in SOT666 packaging.

1PS66SB82115 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
-
Package/Case:
SOT-563, SOT-666
Packaging:
Bulk
Product Status:
Active
Diode Type:
Schottky - 3 Independent
Voltage - Peak Reverse (Max):
15V
Current - Max:
30 mA
Capacitance @ Vr, F:
1pF @ 0V, 1MHz
Resistance @ If, F:
12Ohm @ 5mA, 1kHz
Power Dissipation (Max):
-
Operating Temperature:
125°C (TJ)
Grade:
-
Qualification:
-
Supplier Device Package:
SOT-666

1PS66SB82115 FAQ

1.How can I place an order for 1PS66SB82115 through Aetrix?

Please submit a Request for Quotation (RFQ) for 1PS66SB82115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1PS66SB82115 reliable?

The price and inventory of 1PS66SB82115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1PS66SB82115 is usually 5 days.

3.What payment methods are accepted for 1PS66SB82115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1PS66SB82115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1PS66SB82115?

1PS66SB82115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1PS66SB82115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1PS66SB82115?

For technical support, including 1PS66SB82115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1PS66SB82115 requirements.

6.How does Aetrix verify that 1PS66SB82115 is sourced from the original manufacturer or authorized distributors?

All 1PS66SB82115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1PS66SB82115 meets industry standards.

7.What is the process for return or replacement of 1PS66SB82115?

All 1PS66SB82115 units undergo pre-shipment inspection (PSI). If there is an issue with 1PS66SB82115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1PS66SB82115 part is unused and in its original packaging.

Return procedure for 1PS66SB82115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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