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Nexperia USA Inc. 1PS76SB17,115

Part No.:
1PS76SB17,115
Manufacturer:
Nexperia USA Inc.
Category:
RF Diodes
Package:
SC-76, SOD-323
Datasheet:
Aetrix1PS76SB17,115.pdf
Description:
RF DIODE SCHOTTKY 4V SOD323
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:313,462

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Product details

Overview

1PS76SB17,115 from Nexperia is a planar low capacitance Schottky barrier diode in SOD323 (SC-76) package, rated for 4 V reverse voltage and 30 mA forward current, with typical diode capacitance of 0.8 pF at 0 V and 1 MHz. It delivers 360–450 mV forward voltage at 1 mA and is AEC-Q101 qualified for automotive-grade reliability in RF detector and ultra-high-speed clamping circuits.

For engineers reviewing the 1PS76SB17,115 datasheet, 1PS76SB17,115 pinout, 1PS76SB17,115 application, or 1PS76SB17,115 equivalent, key selection criteria include sub-1 pF capacitance at zero bias, <450 mV VF at 1 mA, AEC-Q101 qualification, SOD323 footprint compatibility, and cathode-marked anode-cathode polarity for RF mixer and high-speed digital clamping layouts.

Technical Context

This Schottky diode employs a planar silicon structure optimized for minimal junction capacitance and low forward conduction loss. Its 0.8 pF capacitance at VR = 0 V / f = 1 MHz and 0.65 pF at VR = 0.5 V enable stable impedance matching in RF detector and ring mixer topologies up to UHF frequencies.

The device operates within −65 °C to +150 °C ambient range and supports pulsed forward currents up to 30 mA with thermal resistance Rth(j-a) = 450 K/W in free air. Reverse leakage remains ≤250 nA at 3 V and 25 °C, ensuring low DC offset in precision RF voltage doubling applications.

Key Specifications

Parameter Value and Actual Design Meaning
Reverse Voltage (VR) 4 V - Maximum blocking voltage before breakdown; defines safe operating limit in clamping and RF detector bias networks.
Forward Current (IF) 30 mA - Continuous DC or pulsed forward current rating; sets maximum signal-handling capacity in switching paths.
Diode Capacitance (Cd) 0.8 pF (typ.) at VR = 0 V, 1 MHz - Enables minimal signal distortion and high-frequency response in RF mixer and detector stages.
Forward Voltage (VF) 360–450 mV at IF = 1 mA - Low conduction loss improves efficiency and reduces self-heating in low-power RF signal routing.
Reverse Current (IR) ≤250 nA at VR = 3 V, 25 °C - Ensures negligible leakage-induced DC drift in precision RF detection and sampling circuits.
Junction Temperature (Tj) 150 °C - Maximum allowable junction temperature; supports operation in under-hood automotive environments.
AEC-Q101 Qualified Yes - Validated per Automotive Electronics Council stress test standard for discrete semiconductors; suitable for automotive infotainment and ADAS sensor interfaces.

Pinout & Package

Encapsulated in a SOD323 (SC-76) surface-mount plastic package measuring 1.7 mm × 1.25 mm × 0.95 mm with 1.3 mm lead pitch, the 1PS76SB17,115 features a two-terminal configuration where the cathode is marked by a bar on the package body.

Pin/Terminal Circuit Role Design Meaning
1 Cathode (K) Connected to circuit ground or lower-potential node; marking bar identifies this terminal for correct orientation in RF detector and clamping layouts.
2 Anode (A) Connected to signal source or higher-potential node; forms forward-biased path during positive half-cycle in voltage doubler and mixer applications.

Key Features

Feature Design Value
Low diode capacitance 0.8 pF typ. at 0 V - Preserves signal integrity above 1 GHz in RF detector front-ends and mixer LO injection paths.
Low forward voltage 360–450 mV at 1 mA - Reduces power dissipation and enables operation from low-voltage rails in portable RF receivers.
SOD323 package size 1.7 mm × 1.25 mm footprint - Supports high-density PCB layouts in space-constrained automotive radar modules and IoT transceivers.
AEC-Q101 qualification Qualified for automotive discrete semiconductors - Meets vibration, temperature cycling, and HTRB requirements for under-dash and engine bay deployment.

Applications

RF Detector Diode Ring Mixer

Use Scenario: Demodulating AM/FM signals in automotive radio tuners and wireless sensor nodes.

IC Role / Device Role / Timing Role: Signal rectification element converting RF envelope to baseband DC/low-frequency output.

Use Value: Sub-1 pF capacitance minimizes frequency-dependent phase shift, enabling accurate amplitude detection up to 2.4 GHz.

Use Scenario: Frequency translation in GPS L1-band (1.575 GHz) front-end receivers.

IC Role / Device Role / Timing Role: Nonlinear switching element in balanced ring topology for LO-driven signal mixing.

Use Value: Low VF and symmetric I/V characteristics reduce conversion loss and improve port-to-port isolation in passive mixers.

Ultra-High-Speed Clamping RF Voltage Doubler

Use Scenario: Protecting high-speed logic inputs (e.g., LVDS, USB 2.0) from ESD-induced overshoot.

IC Role / Device Role / Timing Role: Fast-turn-on shunt clamp limiting transient voltage spikes to <0.5 V above rail.

Use Value: 0.8 pF capacitance avoids signal edge degradation; 360 mV VF ensures clamping threshold remains below 3.3 V logic thresholds.

Use Scenario: Generating doubled DC supply from low-power RF energy harvesting circuits.

IC Role / Device Role / Timing Role: Charge-pump switching diode in Greinacher topology converting AC RF input to DC output.

Use Value: ≤250 nA IR at 3 V prevents charge leakage, sustaining >75% voltage doubling efficiency at µW-level input power.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky barrier diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
RB521S-40T1G 40 V VR, 200 mA IF, 1.5 pF Cd at 0 V - Higher voltage rating but 87.5% higher capacitance. Preferred in 5 V+ clamping and general-purpose rectification; unsuitable for >1 GHz RF detectors due to capacitance. Select when system requires higher reverse margin and lower cost; avoid where sub-1 pF is mandatory.
NSR0230HT1G 30 V VR, 200 mA IF, 1.2 pF Cd at 0 V - Higher IF rating but 50% greater capacitance than 1PS76SB17,115. Better suited for USB data line protection and 3.3 V logic clamping; marginal for UHF mixer use. Choose for higher current handling in industrial I/O protection; not recommended for RF detector front-ends.

Compared with RB521S-40T1G and NSR0230HT1G, the 1PS76SB17,115 uniquely balances sub-1 pF capacitance, AEC-Q101 qualification, and SOD323 footprint-making it the only option among the three validated for automotive-grade RF detector and mixer designs requiring <0.9 pF and ≤450 mV VF at 1 mA.

Availability

1PS76SB17,115 is available at Aetrix Electronics and suitable for RF detector front-ends, automotive radar clamping circuits, and ultra-high-speed digital signal conditioning requiring stable component supply across production lifecycles.

Supply support for 1PS76SB17,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-performance, reliable discrete and logic devices, with leadership in automotive-qualified components and advanced packaging technologies.

The 1PS76SB17,115 belongs to Nexperia's low-capacitance Schottky diode product line, engineered specifically for RF signal processing, high-speed clamping, and automotive-grade sensing applications demanding minimal parasitic capacitance and robust thermal performance.

FAQ

What is the maximum reverse voltage rating for the 1PS76SB17,115?

The absolute maximum reverse voltage (VR) for the 1PS76SB17,115 is 4 V, as defined in IEC 60134 Absolute Maximum Ratings. Operation beyond this value risks irreversible junction breakdown. This rating makes it suitable for low-voltage RF and digital clamping, but not for 5 V or higher bus protection without derating.

Is the 1PS76SB17,115 suitable for automotive applications?

Yes-the 1PS76SB17,115 is fully qualified to AEC-Q101 standards for discrete semiconductors, including temperature cycling, high-temperature reverse bias, and mechanical shock testing. It is approved for use in automotive infotainment, ADAS sensor interfaces, and body control modules where space and RF performance are critical.

How is cathode identification implemented on the SOD323 package?

The cathode (pin 1) is identified by a visible marking bar on the top surface of the SOD323 package. This bar aligns with the cathode symbol 'K' in the device's simplified outline and must be oriented toward the lower-potential node in circuit layout to ensure correct forward biasing in RF detector and clamping configurations.

What is the thermal resistance from junction to ambient for this diode?

The thermal resistance from junction to ambient (Rth(j-a)) is 450 K/W under free-air conditions, per Nexperia's SOD323 standard mounting guidelines. This value assumes no PCB copper pour or heatsinking; actual thermal performance improves significantly with 20 mm² of 1 oz copper connected to both terminals.

1PS76SB17,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SC-76, SOD-323
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Diode Type:
Schottky - Single
Voltage - Peak Reverse (Max):
4V
Current - Max:
30 mA
Capacitance @ Vr, F:
0.65pF @ 0.5V, 1MHz
Resistance @ If, F:
-
Power Dissipation (Max):
-
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q100
Supplier Device Package:
SOD-323

1PS76SB17,115 FAQ

1.How can I place an order for 1PS76SB17,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for 1PS76SB17,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1PS76SB17,115 reliable?

The price and inventory of 1PS76SB17,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1PS76SB17,115 is usually 5 days.

3.What payment methods are accepted for 1PS76SB17,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1PS76SB17,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1PS76SB17,115?

1PS76SB17,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1PS76SB17,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1PS76SB17,115?

For technical support, including 1PS76SB17,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1PS76SB17,115 requirements.

6.How does Aetrix verify that 1PS76SB17,115 is sourced from the original manufacturer or authorized distributors?

All 1PS76SB17,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1PS76SB17,115 meets industry standards.

7.What is the process for return or replacement of 1PS76SB17,115?

All 1PS76SB17,115 units undergo pre-shipment inspection (PSI). If there is an issue with 1PS76SB17,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1PS76SB17,115 part is unused and in its original packaging.

Return procedure for 1PS76SB17,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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