Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi 1SMA13AT3G

Part No.:
1SMA13AT3G
Manufacturer:
onsemi
Category:
TVS Diodes
Package:
DO-214AC, SMA
Datasheet:
Aetrix1SMA13AT3G.pdf
Description:
TVS DIODE 13VWM 21.5VC SMA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:336,151

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

1SMA13AT3G from ON Semiconductor is a unidirectional 400 W peak power Zener transient voltage suppressor (TVS) designed to protect sensitive electronics against ESD and surge events. It features a 13 V working peak reverse voltage (VRWM), 15.15 V nominal breakdown voltage (VBR) at 1 mA, 21.5 V clamping voltage (VC) at 18.6 A peak pulse current, and sub-1 ns response time - deployed in automotive power supply rails and industrial I/O interfaces.

For engineers reviewing the 1SMA13AT3G datasheet, pinout, applications, or equivalent options, key selection criteria include VRWM margin over operating voltage, clamping voltage vs. device withstand rating, surge current capability under 10/1000 µs waveform, and SMA package thermal performance on FR-4 PCBs.

Technical Context

This TVS diode operates in avalanche breakdown mode to clamp transients above its VBR threshold while maintaining low dynamic impedance. Its unidirectional configuration provides reverse-biased protection only, requiring correct polarity placement across DC lines.

It complies with AEC-Q101 for automotive use and delivers Class 3 HBM ESD immunity (>16 kV). The device is optimized for single-pulse 10/1000 µs surge waveforms per R.E.A., with derating applied above 75°C junction temperature.

Key Specifications

ParameterValue and Actual Design Meaning
VRWM13 V - Maximum continuous reverse operating voltage before clamping begins; must exceed circuit's max DC or peak AC voltage.
VBR @ IT=1 mA15.15 V (nominal) - Measured breakdown voltage ensures predictable turn-on threshold under standardized test conditions.
VC @ IPP=18.6 A21.5 V - Clamping voltage during 400 W surge; determines maximum stress imposed on protected downstream ICs.
Peak Pulse Power400 W @ 1 ms - Sustains high-energy transients such as ISO 7637-2 Load Dump or IEC 61000-4-5 surges without failure.
Junction Capacitance860 pF @ 0 V - Low enough for <100 MHz signal integrity in power rail protection; not suitable for high-speed data lines.
ESD RatingClass 3 (>16 kV HBM) - Meets stringent electrostatic discharge immunity requirements for automotive and industrial end equipment.

Pinout & Package

The 1SMA13AT3G is housed in an SMA (DO-214AC) surface-mount package (Case 403D), featuring a low-profile, flat-handling design compatible with top-slide or bottom-board mounting. Polarity is marked by a cathode band.

Pin/TerminalCircuit RoleDesign Meaning
Cathode (banded end)Anode of internal Zener junctionConnected to higher-potential side of protected line; clamps when reverse voltage exceeds VBR.
AnodeCathode of internal Zener junctionConnected to ground or lower-potential reference; completes conduction path during transient events.

Key Features

FeatureDesign Value
Unidirectional clampingProtects DC power rails without interfering with forward-biased operation; avoids leakage during normal conduction.
400 W peak pulse powerWithstands automotive load dump and industrial surge events per ISO 7637-2 and IEC 61000-4-5 standards.
Sub-1 ns response timeEngages before most semiconductor damage mechanisms initiate, enabling effective protection of fast-switching ICs.
AEC-Q101 qualifiedValidated for automotive underhood and powertrain applications with extended temperature and reliability testing.

Applications

Automotive Power Supply ProtectionIndustrial PLC I/O Protection

Use Scenario: Protecting 12 V battery-fed ECUs from load dump transients up to ±120 V and ISO 7637-2 pulses.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between VBAT and ground to clamp reverse transients before they reach LDOs or microcontrollers.

Use Value: Limits voltage seen by downstream components to ≤21.5 V during 400 W surges, preserving functional safety compliance.

Use Scenario: Shielding 24 V digital input modules from field-wiring induced surges and ESD events in factory automation.

IC Role / Device Role / Timing Role: Front-end transient suppressor on isolated input channels, mounted adjacent to connector entry points.

Use Value: Absorbs >16 kV HBM ESD strikes and 1 kV/50 Ω fast transients without degradation, ensuring long-term channel reliability.

Medical Equipment Power RailsTelecom Power Interface

Use Scenario: Safeguarding auxiliary 5–24 V rails in diagnostic imaging systems against coupling from motor drives or switching PSUs.

IC Role / Device Role / Timing Role: Secondary-level TVS on regulated outputs, coordinated with primary MOVs and fuses for staged protection.

Use Value: Provides precise 13 V VRWM hold-off with 21.5 V clamping to avoid nuisance tripping while meeting IEC 60601-1 creepage requirements.

Use Scenario: Protecting PoE-powered Ethernet ports from lightning-induced surges entering via data pairs or auxiliary power lines.

IC Role / Device Role / Timing Role: Discrete unidirectional suppressor on DC bias lines feeding active Ethernet magnetics or PHY power supplies.

Use Value: Delivers 400 W surge handling with 860 pF capacitance - low enough to avoid signal distortion on 100BASE-TX links.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SZ1SMA13AT3GIdentical electrical specs; AEC-Q101 certified with PPAP documentation support and automotive-specific traceability.Required for Tier 1 automotive BOMs where change control, lot traceability, and PPAP submission are mandatory.Select SZ1SMA13AT3G when automotive qualification and manufacturing site control are contractually required.
1.5SMC13ASame VRWM (13 V) and VC (21.5 V), but in larger SMC (DO-214AB) package with 1500 W peak power rating.Used where higher surge energy handling is needed, e.g., main board-level protection rather than point-of-load suppression.Choose 1.5SMC13A when system-level surge tests exceed 400 W or PCB layout allows larger footprint.

Compared with SZ1SMA13AT3G and 1.5SMC13A, the 1SMA13AT3G offers optimal balance of compact SMA footprint, automotive-grade reliability, and sufficient 400 W surge capacity for point-of-load protection - making it ideal for space-constrained, cost-sensitive industrial and automotive modules.

Availability

1SMA13AT3G is available at Aetrix Electronics and suitable for automotive power management, industrial PLC I/O conditioning, and medical equipment power rail protection requiring stable component supply and long-term lifecycle assurance.

Supply support for 1SMA13AT3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensor, and discrete devices for automotive, industrial, and cloud power applications.

The 1SMAxxAT3G series belongs to ON Semiconductor's SURMETIC® TVS portfolio, engineered specifically for robust, cost-effective overvoltage protection in harsh environments including automotive engine compartments and factory floors.

FAQ

What is the clamping voltage of the 1SMA13AT3G under maximum surge conditions?

The 1SMA13AT3G exhibits a maximum clamping voltage (VC) of 21.5 V when subjected to its rated peak pulse current of 18.6 A, measured using the standard 10/1000 µs waveform. This value is guaranteed across the full operating temperature range and defines the upper voltage limit imposed on protected circuitry during transient events. Designers must verify that this clamping level remains below the absolute maximum ratings of downstream components. The 1SMA13AT3G datasheet specifies this parameter in Table 3 under "VC @ IPP".

Is the 1SMA13AT3G suitable for bidirectional signal line protection?

No, the 1SMA13AT3G is a unidirectional TVS diode and is not appropriate for bidirectional signal line protection. It conducts only during reverse-biased overvoltage events and blocks forward current beyond its ~0.85 V forward voltage. For data lines requiring symmetrical clamping (e.g., RS-485, USB, CAN), a bidirectional variant such as 1SMA13CAT3G must be used instead. The 1SMA13AT3G is intended exclusively for DC power rail protection where polarity is fixed.

Does the 1SMA13AT3G meet automotive qualification standards?

Yes, the 1SMA13AT3G is AEC-Q101 qualified and PPAP capable, confirming its suitability for automotive applications including body electronics, infotainment power supplies, and ADAS sensor modules. While the base 1SMA13AT3G meets the stress test requirements, the SZ-prefix variant (SZ1SMA13AT3G) adds enhanced process controls and documentation required for Tier 1 automotive procurement. Both share identical electrical characteristics and package dimensions.

What is the thermal resistance from junction to ambient for the 1SMA13AT3G?

The 1SMA13AT3G has a thermal resistance from junction to ambient (RJA) of 250 °C/W when mounted on a standard FR-4 PCB using ON Semiconductor's minimum recommended footprint. At 25°C ambient, its DC power dissipation is rated at 0.5 W, derating linearly by 4.0 mW/°C above that temperature. This RJA value assumes no copper pour or thermal vias; adding a 1″² copper pad reduces RJA significantly and improves surge survivability. The 1SMA13AT3G datasheet specifies these values in the "Maximum Ratings" table on page 2.

How does the junction capacitance of the 1SMA13AT3G affect high-frequency circuit design?

The 1SMA13AT3G exhibits a typical junction capacitance of 860 pF at 0 V bias, which limits its use to low-to-moderate frequency applications such as DC power rail protection. This capacitance introduces impedance below ~200 MHz and may distort fast digital signals or degrade RF front-end performance if placed on signal paths. It is well-suited for 24 V industrial I/O or automotive battery lines but should be avoided on USB, HDMI, or Ethernet data lines. The 1SMA13AT3G datasheet reports CTyp in the Electrical Characteristics table on page 3.

1SMA13AT3G Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Package/Case:
DO-214AC, SMA
Series:
-
Packaging:
Bulk
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
13V
Voltage - Breakdown (Min):
14.4V
Voltage - Clamping (Max) @ Ipp:
21.5V
Current - Peak Pulse (10/1000µs):
18.6A
Power - Peak Pulse:
400W
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
860pF @ 1MHz
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SMA

1SMA13AT3G FAQ

1.How can I place an order for 1SMA13AT3G through Aetrix?

Please submit a Request for Quotation (RFQ) for 1SMA13AT3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1SMA13AT3G reliable?

The price and inventory of 1SMA13AT3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1SMA13AT3G is usually 5 days.

3.What payment methods are accepted for 1SMA13AT3G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1SMA13AT3G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1SMA13AT3G?

1SMA13AT3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1SMA13AT3G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1SMA13AT3G?

For technical support, including 1SMA13AT3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1SMA13AT3G requirements.

6.How does Aetrix verify that 1SMA13AT3G is sourced from the original manufacturer or authorized distributors?

All 1SMA13AT3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1SMA13AT3G meets industry standards.

7.What is the process for return or replacement of 1SMA13AT3G?

All 1SMA13AT3G units undergo pre-shipment inspection (PSI). If there is an issue with 1SMA13AT3G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1SMA13AT3G part is unused and in its original packaging.

Return procedure for 1SMA13AT3G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

1SMA13AT3G Tags

  • 1SMA13AT3G
  • 1SMA13AT3G PDF
  • 1SMA13AT3G Datasheet
  • 1SMA13AT3G Specifications
  • 1SMA13AT3G Images
  • onsemi
  • onsemi 1SMA13AT3G
  • Buy 1SMA13AT3G
  • 1SMA13AT3G Price
  • 1SMA13AT3G Distributor
  • 1SMA13AT3G Supplier
  • 1SMA13AT3G Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER