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onsemi 1SMB13CAT3G
- Part No.:
- 1SMB13CAT3G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
1SMB13CAT3G.pdf
- Description:
- TVS DIODE 13VWM 21.5VC SMB
- Quantity:
- Payment:
- Shipping:
Inventory:405,000
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Product details
Overview
1SMB13CAT3G from ON Semiconductor is a bidirectional 600 W peak power Zener transient voltage suppressor (TVS) designed for parallel overvoltage protection of sensitive electronics. It features a 13 V working peak reverse voltage (VRWM), 15.16 V nominal breakdown voltage (VBR) at 1 mA test current, and clamps to 21.5 V at 27.9 A peak pulse current - enabling robust surge suppression in DC power rails and signal lines.
For engineers reviewing the 1SMB13CAT3G datasheet, pinout, applications, or equivalent options, key selection criteria include clamping voltage margin vs. protected IC's absolute maximum rating, VRWM alignment with steady-state operating voltage, low leakage (<5 µA @ 13 V), UL 497B recognition for isolated loop protection, and SMB package compatibility with high-density PCB layouts.
Technical Context
This TVS diode operates as a voltage-clamped shunt protector: under normal bias it presents <5 µA leakage above VRWM; during transients exceeding VBR, it avalanches rapidly (<1 ns response) to divert surge current away from downstream circuitry. Its bidirectional symmetry enables use on AC-coupled or floating lines without polarity concerns.
The device leverages silicon Zener avalanche physics with optimized junction design to achieve 600 W non-repetitive peak power handling (10/1000 µs waveform) while maintaining low dynamic impedance and stable clamping across temperature (−65 °C to +150 °C operating range).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 13 V - must be ≥ continuous operating voltage of protected circuit to avoid leakage-induced power loss or false triggering |
| VBR (min/typ/max) | 14.4 V / 15.16 V / 15.9 V @ 1 mA - defines precise avalanche onset threshold for predictable clamping initiation |
| VC @ IPP | 21.5 V @ 27.9 A - maximum clamped voltage seen by protected load during 600 W surge, directly limiting stress on downstream ICs |
| IPP | 27.9 A - peak surge current the device safely diverts without degradation, determined by 10/1000 µs waveform |
| Junction Capacitance | 630 pF @ 0 V - impacts high-frequency signal integrity; suitable for DC/low-speed lines but not RF or >10 Mbps data buses |
| Leakage Current | <5 µA @ 13 V - ensures negligible standby power draw and no interference with high-impedance sensing nodes |
| UL Recognition | UL 497B (QVGQ2, File #E210057) - certified for isolated loop circuit protection, including strike voltage, endurance, and dielectric withstand testing |
Pinout & Package
1SMB13CAT3G is housed in an SMB (DO-214AA) surface-mount plastic package (Case 403C), featuring void-free thermosetting molding, corrosion-resistant finish, and modified L-bend leads for enhanced pad adhesion. Polarity band is omitted due to bidirectional symmetry.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Surge current path terminal | Either terminal accepts transient polarity; no orientation required during placement - simplifies layout and reduces assembly errors |
| Case (exposed pad) | Thermal conduction path | Not electrically connected; serves only thermal dissipation - requires soldering to copper pour per ON Semi footprint spec for RJA = 226 °C/W |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of AC signals, differential buses, or ungrounded systems without polarity constraints |
| 600 W peak power rating | Handles IEC 61000-4-5 Level 4 surges (4 kV line-earth, 2 kV line-line) when properly laid out with low-inductance traces |
| <1 ns response time | Minimizes voltage overshoot before clamping engages - critical for protecting sub-20 V logic ICs and microcontrollers |
| ESD rating >16 kV HBM | Provides system-level ESD immunity beyond IEC 61000-4-2, reducing need for additional discrete ESD protection |
| Pb-free SURMETIC™ package | Meets RoHS and J-STD-020 reflow requirements (260 °C/10 s); compatible with automated SMT assembly and lead-free soldering |
Applications
| Industrial Power Supply Input Protection | Automotive Body Control Module (BCM) CAN Bus Lines |
|---|---|
Use Scenario: 24 V DC input stage of programmable logic controller (PLC) power supply exposed to load dump and ISO 7637-2 pulses. IC Role / Device Role / Timing Role: Shunt TVS placed across input terminals to clamp transients before they reach upstream rectifier and downstream DC/DC converter. Use Value: Clamps 130 V/35 A load dump spikes to ≤21.5 V, preventing damage to 36 V-rated input capacitors and MOSFET gate drivers. | Use Scenario: CAN_H and CAN_L lines in vehicle BCM subjected to ESD events and battery disconnect transients. IC Role / Device Role / Timing Role: Bidirectional TVS mounted at connector entry point to absorb ±15 kV contact ESD and 100 V/1 A ISO 7637-2 pulses. Use Value: Maintains CAN signal integrity by limiting voltage excursions to <22 V, ensuring transceivers remain within common-mode range (−2 V to +7 V) during surges. |
| Medical Equipment Isolated Sensor Interface | Telecom Line Card Overvoltage Protection |
Use Scenario: 5 V isolated analog front-end for patient monitoring sensors, requiring UL 497B compliance for safety certification. IC Role / Device Role / Timing Role: TVS installed on secondary side of isolation barrier to protect ADC inputs from coupling-induced transients. Use Value: UL 497B recognition validates suitability for isolated loop circuits; 21.5 V clamping prevents latch-up in 5.5 V max-rated SAR ADCs. | Use Scenario: T1/E1 line interface card in central office equipment facing lightning-induced surges on twisted-pair telecom lines. IC Role / Device Role / Timing Role: Primary shunt protector on line-side transformer secondary, coordinated with gas discharge tube (GDT) primary stage. Use Value: 600 W rating supports coordination with GDTs for multi-stage protection; 630 pF capacitance avoids signal distortion on 2.048 Mbps T1 links. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SZ1SMB13CAT3G | AEC-Q101 qualified; identical electrical specs but with automotive-grade process controls and PPAP documentation support | Required for automotive ECUs; unnecessary for industrial or medical applications unless OEM mandates AEC-Q101 | Select SZ1SMB13CAT3G only if automotive qualification or traceability is contractually required |
| 1SMB13AT3G | Unidirectional version - lacks negative-voltage clamping capability; otherwise matches VRWM, VBR, VC, and IPP | Suitable only for DC-biased lines where reverse polarity transients are impossible (e.g., +12 V rail with ground reference) | Choose 1SMB13AT3G only when polarity is fixed and board space allows elimination of series blocking diode |
Compared with 1SMB13CAT3G, SZ1SMB13CAT3G adds automotive qualification overhead without electrical benefit, while 1SMB13AT3G sacrifices bidirectional protection to reduce cost - making 1SMB13CAT3G the optimal choice for general-purpose AC-coupled or floating-line protection where polarity-agnostic clamping is essential.
Availability
1SMB13CAT3G is available at Aetrix Electronics and suitable for industrial power supplies, automotive body control modules, medical sensor interfaces, and telecom line cards requiring stable component supply and UL 497B-certified transient protection.
Supply support for 1SMB13CAT3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor (now part of onsemi) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and medical markets.
The 1SMBxxCAT3G series belongs to ON Semiconductor's SURMETIC™ TVS portfolio, engineered specifically for high-energy transient suppression in harsh environments where reliability, UL certification, and consistent clamping performance are mandatory.
FAQ
What is the clamping voltage of the 1SMB13CAT3G under maximum surge conditions?
The 1SMB13CAT3G clamps to 21.5 V at its rated peak pulse current of 27.9 A (10/1000 µs waveform). This value is measured per standard test conditions and represents the maximum voltage imposed on protected circuitry during a full 600 W transient event. The 1SMB13CAT3G maintains this clamping performance across its specified operating temperature range (−65 °C to +150 °C), with minimal derating up to +125 °C.
Is the 1SMB13CAT3G suitable for protecting USB or Ethernet data lines?
No, the 1SMB13CAT3G is not recommended for USB or Ethernet data lines due to its 630 pF junction capacitance, which would severely degrade signal integrity at high speeds (e.g., USB 2.0's 480 Mbps or 100BASE-TX's 125 MHz). The 1SMB13CAT3G is intended for DC power rails, low-speed analog signals, or AC mains-connected circuits where capacitance is not a limiting factor.
Does the 1SMB13CAT3G require a series current-limiting resistor in typical applications?
No, the 1SMB13CAT3G does not require a series current-limiting resistor because it functions as a self-limiting shunt device - its dynamic resistance drops sharply once VBR is exceeded, allowing it to absorb surge energy without external impedance. However, a small series inductor or ferrite bead may be added near the device to reduce PCB trace inductance and minimize voltage overshoot during <1 ns turn-on.
How does the 1SMB13CAT3G differ from the unidirectional 1SMB13AT3G?
While both share identical VRWM (13 V), VBR (14.4–15.9 V), and VC (21.5 V), the 1SMB13CAT3G is bidirectional and clamps symmetrically for both positive and negative transients, whereas the 1SMB13AT3G only clamps in one direction and blocks reverse voltage like a standard Zener. This makes the 1SMB13CAT3G mandatory for AC-coupled, floating, or differential signal paths where polarity reversal can occur.
What is the maximum allowable PCB trace inductance when using the 1SMB13CAT3G for ESD protection?
To limit overshoot to <10% above VC (i.e., <24 V), PCB trace inductance feeding the 1SMB13CAT3G should be kept below 8 nH - achievable with short (<5 mm), wide (≥0.5 mm), direct traces from protected node to TVS terminals. ON Semiconductor's application notes confirm that longer or narrower traces increase inductive kick, potentially exposing downstream ICs to voltages exceeding their absolute maximum ratings despite the 1SMB13CAT3G's <1 ns response.
1SMB13CAT3G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- DO-214AA, SMB
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 13V
- Voltage - Breakdown (Min):
- 14.4V
- Voltage - Clamping (Max) @ Ipp:
- 21.5V
- Current - Peak Pulse (10/1000µs):
- 27.9A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 630pF @ 1MHz
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SMB
1SMB13CAT3G FAQ
1.How can I place an order for 1SMB13CAT3G through Aetrix?
Please submit a Request for Quotation (RFQ) for 1SMB13CAT3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1SMB13CAT3G reliable?
The price and inventory of 1SMB13CAT3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1SMB13CAT3G is usually 5 days.
3.What payment methods are accepted for 1SMB13CAT3G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1SMB13CAT3G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1SMB13CAT3G?
1SMB13CAT3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1SMB13CAT3G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1SMB13CAT3G?
For technical support, including 1SMB13CAT3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1SMB13CAT3G requirements.
6.How does Aetrix verify that 1SMB13CAT3G is sourced from the original manufacturer or authorized distributors?
All 1SMB13CAT3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1SMB13CAT3G meets industry standards.
7.What is the process for return or replacement of 1SMB13CAT3G?
All 1SMB13CAT3G units undergo pre-shipment inspection (PSI). If there is an issue with 1SMB13CAT3G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1SMB13CAT3G part is unused and in its original packaging.
Return procedure for 1SMB13CAT3G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1SMB13CAT3G Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
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Diodes Incorporated
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Diodes Incorporated
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DESD5V0U1BB-7
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Diodes Incorporated
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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