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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix 2N6660JTX02

Name: 2N6660JTX02
Brand: Vishay Siliconix
SKU: 2N6660JTX02
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N6660JTX02

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-205AD, TO-39-3 Metal Can

Datasheet:: 2N6660JTX02.pdf

Description:: MOSFET N-CH 60V 990MA TO205AD

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Product details

Overview

2N6660JTX02 from Vishay Siliconix is a military-qualified N-channel enhancement-mode MOSFET with 60 V drain-source rating, 1.3 Ω R_DS(on) at V_GS = 10 V, 1.7 V gate threshold voltage, 35 pF input capacitance, and TO-205AD (TO-39) metal-can package - used in high-reliability logic-level switching for relays, solenoids, and solid-state relays.

For engineers reviewing the 2N6660JTX02 datasheet, 2N6660JTX02 pinout, 2N6660JTX02 application, or 2N6660JTX02 equivalent, key selection criteria include guaranteed military-grade reliability, low-voltage TTL/CMOS drive compatibility, fast 8 ns turn-on time, and junction temperature range from –55 °C to +150 °C.

Technical Context

This device operates as a single N-channel power switch with drain connected to case (electrically tied to Pin 1), requiring heatsinking via the metal can. Its low 1.7 V V_GS(th) enables direct interface with 3.3 V and 5 V logic without level-shifting, while its 35 pF C_iss and 8 ns t_ON support high-speed digital control in pulse-driven loads.

The 2N6660JTX02 is characterized across –55 °C to +125 °C for V_GS(th) (0.3–2.5 V), R_DS(on) (1.3–5.6 Ω), and I_DSS (1–100 μA), with thermal resistance R_thJC = 20 °C/W confirming efficient heat transfer from junction to case under continuous operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - maximum blocking voltage before avalanche breakdown; suitable for 48 V system interfaces.
R_DS(on)	1.3 Ω at V_GS = 10 V - ensures <1.3 V conduction drop at 1 A load current, minimizing power loss.
V_GS(th)	1.7 V typical - guarantees reliable turn-on with standard TTL/CMOS outputs (≥2.4 V high).
C_iss	35 pF - low gate input capacitance reduces driver power demand and speeds up switching transitions.
t_ON	8 ns - fast turn-on supports high-frequency PWM control in relay/solenoid drivers.
I_D (continuous)	0.99 A at T_C = 25 °C - defines maximum steady-state current with case heatsink at ambient reference.
T_J range	–55 °C to +150 °C - validated for extended temperature operation in aerospace and defense systems.

Pinout & Package

2N6660JTX02 uses the TO-205AD (TO-39) metal-can package with three leads arranged in top-view clockwise order: Drain (Pin 1), Gate (Pin 2), Source (Pin 3). The drain is electrically connected to the case and must be isolated from mounting hardware unless referenced to system ground.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Drain)	Main current output terminal	Electrically bonded to metal case; requires insulating washer if mounted to grounded heatsink.
Pin 2 (Gate)	Control input	High-impedance MOS gate; driven directly by TTL/CMOS logic; 35 pF C_iss limits required drive strength.
Pin 3 (Source)	Current return path	Reference node for gate drive; connects to system ground or load return in low-side switch configuration.

Key Features

Feature	Design Value
Military qualification (JANTX)	Qualified per MIL-PRF-19500/512, including screening, burn-in, and lot traceability for Hi-Rel programs.
Low V_GS(th)	1.7 V typical enables robust turn-on with 3.3 V and 5 V logic families without external level shifters.
Drain-to-case connection	Pin 1 and metal can are electrically common - simplifies thermal management but mandates electrical isolation planning.
Fast switching	8 ns t_ON and 8.5 ns t_OFF support >10 MHz digital control in pulse-width modulated loads.
Low leakage	I_DSS ≤ 1 μA at 48 V and 25 °C - critical for battery-operated systems requiring ultra-low standby current.

Applications

Aerospace Actuator Control	Hi-Rel Battery Management
Use Scenario: Driving solenoid valves and position actuators in satellite attitude control systems where radiation tolerance and long-term reliability are mandatory. IC Role / Device Role / Timing Role: Low-side N-channel switch controlling 24–48 V DC solenoid coils with TTL-compatible enable signals. Use Value: Guaranteed 1.3 Ω R_DS(on) at 10 V gate drive ensures <1.3 W conduction loss at 1 A, reducing thermal stress in sealed enclosures.	Use Scenario: Isolating backup battery banks in avionics power distribution units during main bus faults. IC Role / Device Role / Timing Role: Solid-state relay replacement for fail-safe battery disconnect with microsecond response. Use Value: 8 ns turn-on time enables rapid fault isolation before overcurrent damage occurs in 28 V aircraft systems.
TTL-Driven Solid-State Relay	Industrial Logic-Level Interface
Use Scenario: Replacing electromechanical relays in programmable logic controller (PLC) output modules operating from 5 V logic rails. IC Role / Device Role / Timing Role: Single-pole, low-side switch interfacing 5 V CMOS outputs to 24 V DC loads (lamps, indicators, small motors). Use Value: 1.7 V V_GS(th) ensures full enhancement with 2.4 V logic-high, eliminating need for gate driver ICs.	Use Scenario: Level-shifting interface between FPGA I/O banks (3.3 V) and legacy 5 V peripheral subsystems in test equipment. IC Role / Device Role / Timing Role: Bidirectional signal conditioning element enabling safe voltage translation without active logic. Use Value: Low 35 pF C_iss prevents signal distortion at >10 MHz data rates while maintaining sub-10 ns propagation delay.

Aerospace Actuator Control

Hi-Rel Battery Management

Use Scenario: Driving solenoid valves and position actuators in satellite attitude control systems where radiation tolerance and long-term reliability are mandatory.

IC Role / Device Role / Timing Role: Low-side N-channel switch controlling 24–48 V DC solenoid coils with TTL-compatible enable signals.

Use Value: Guaranteed 1.3 Ω R_DS(on) at 10 V gate drive ensures <1.3 W conduction loss at 1 A, reducing thermal stress in sealed enclosures.

Use Scenario: Isolating backup battery banks in avionics power distribution units during main bus faults.

IC Role / Device Role / Timing Role: Solid-state relay replacement for fail-safe battery disconnect with microsecond response.

Use Value: 8 ns turn-on time enables rapid fault isolation before overcurrent damage occurs in 28 V aircraft systems.

TTL-Driven Solid-State Relay

Industrial Logic-Level Interface

Use Scenario: Replacing electromechanical relays in programmable logic controller (PLC) output modules operating from 5 V logic rails.

IC Role / Device Role / Timing Role: Single-pole, low-side switch interfacing 5 V CMOS outputs to 24 V DC loads (lamps, indicators, small motors).

Use Value: 1.7 V V_GS(th) ensures full enhancement with 2.4 V logic-high, eliminating need for gate driver ICs.

Use Scenario: Level-shifting interface between FPGA I/O banks (3.3 V) and legacy 5 V peripheral subsystems in test equipment.

IC Role / Device Role / Timing Role: Bidirectional signal conditioning element enabling safe voltage translation without active logic.

Use Value: Low 35 pF C_iss prevents signal distortion at >10 MHz data rates while maintaining sub-10 ns propagation delay.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2N6661JTX02	Higher V_DS = 100 V; R_DS(on) = 2.5 Ω at V_GS = 10 V; same TO-205AD package and JANTX screening.	Used where higher voltage margin is required (e.g., 72 V transient protection), but with ~90 % higher conduction loss at 1 A.	Select when system transients exceed 60 V but logic-level drive and military qualification remain essential.
DMN66D0LW-7	Surface-mount SOT-23 package; R_DS(on) = 1.2 Ω at V_GS = 4.5 V; no military qualification; max V_DS = 60 V.	Targeted at commercial high-volume PCBs where space and cost outweigh environmental ruggedness requirements.	Choose for compact consumer or industrial designs needing logic-level performance without Hi-Rel certification.

Compared with 2N6660JTX02, 2N6661JTX02 trades lower on-resistance for higher voltage capability, while DMN66D0LW-7 offers comparable R_DS(on) in a smaller footprint but lacks military screening, thermal robustness, and through-hole mechanical stability.

Availability

2N6660JTX02 is available at Aetrix Electronics and suitable for aerospace actuator control, Hi-Rel battery management, and TTL-driven solid-state relay applications requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for 2N6660JTX02 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, precision, and ruggedized packaging.

The 2N6660JTX02 belongs to Vishay's military-qualified silicon power MOSFET product line, designed specifically for high-reliability analog switching in defense, aerospace, and critical infrastructure systems where long-term stability and environmental resilience are non-negotiable.

FAQ

What is the gate-source threshold voltage specification for the 2N6660JTX02?

The 2N6660JTX02 has a gate-source threshold voltage V_GS(th) of 0.8 V minimum, 1.7 V typical, and 2.0 V maximum at I_D = 1 mA and V_DS = V_GS. At elevated temperature (125 °C), V_GS(th) drops to 0.3 V minimum, ensuring consistent turn-on behavior across its full operating range. This low threshold enables direct drive from standard TTL and CMOS logic families without external level shifting.

Is the 2N6660JTX02 pin-compatible with other TO-205AD MOSFETs like the 2N6661JTX02?

Yes, the 2N6660JTX02 shares identical TO-205AD (TO-39) mechanical dimensions and pinout (Drain–Gate–Source, clockwise top view) with the 2N6661JTX02 and other variants in the 2N666x family. However, electrical parameters differ - notably V_DS (60 V vs. 100 V) and R_DS(on) - so substitution requires verification of voltage and conduction loss requirements in the target circuit.

Does the 2N6660JTX02 have drain connected to the case, and how does that affect mounting?

Yes, the drain of the 2N6660JTX02 is electrically connected to the metal case (Pin 1). When mounted to a heatsink, an insulating washer and shoulder washer must be used unless the heatsink is intentionally tied to the drain potential. Failure to isolate may cause short circuits in low-side switch configurations where source is grounded.

What is the maximum continuous drain current for the 2N6660JTX02 at 100 °C case temperature?

The 2N6660JTX02 supports a continuous drain current of 0.62 A at T_C = 100 °C, derated from 0.99 A at T_C = 25 °C. This reflects thermal limitations of the TO-205AD package, with R_thJC = 20 °C/W. Designers must ensure adequate heatsinking to maintain case temperature within limits for sustained operation.

How does the 2N6660JTX02 perform in battery-operated systems with low standby current requirements?

The 2N6660JTX02 exhibits ultra-low off-state leakage: I_DSS ≤ 1 μA at V_DS = 48 V and 25 °C, rising to ≤100 μA at 125 °C. This makes it suitable for battery-backed systems where quiescent current must remain below microampere levels during sleep modes, such as in remote telemetry or emergency power controllers using the 2N6660JTX02 as a load switch.

2N6660JTX02 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-205AD, TO-39-3 Metal Can

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 990mA (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:: 2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 50 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 725mW (Ta), 6.25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-205AD (TO-39)

2N6660JTX02 FAQ

1.How can I place an order for 2N6660JTX02 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N6660JTX02 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N6660JTX02 reliable?

The price and inventory of 2N6660JTX02 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N6660JTX02 is usually 5 days.

3.What payment methods are accepted for 2N6660JTX02?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N6660JTX02 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N6660JTX02?

2N6660JTX02 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N6660JTX02 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N6660JTX02?

For technical support, including 2N6660JTX02 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N6660JTX02 requirements.

6.How does Aetrix verify that 2N6660JTX02 is sourced from the original manufacturer or authorized distributors?

All 2N6660JTX02 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N6660JTX02 meets industry standards.

7.What is the process for return or replacement of 2N6660JTX02?

All 2N6660JTX02 units undergo pre-shipment inspection (PSI). If there is an issue with 2N6660JTX02, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N6660JTX02 part is unused and in its original packaging.

Return procedure for 2N6660JTX02:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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