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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix 2N6660JTXL02

Name: 2N6660JTXL02
Brand: Vishay Siliconix
SKU: 2N6660JTXL02
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N6660JTXL02

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-205AD, TO-39-3 Metal Can

Datasheet:: 2N6660JTXL02.pdf

Description:: MOSFET N-CH 60V 990MA TO205AD

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Product details

Overview

2N6660JTXL02 from Vishay Siliconix is a military-qualified N-channel enhancement-mode MOSFET with 60 V V_DS, 1.3 Ω R_DS(on) at V_GS = 10 V, 1.7 V gate threshold, and TO-205AD (TO-39) metal-can package. It serves as a low-voltage logic-level switch in solid-state relays, solenoid drivers, and battery-operated hi-rel systems.

For engineers reviewing the 2N6660JTXL02 datasheet, 2N6660JTXL02 pinout, 2N6660JTXL02 application, or 2N6660JTXL02 equivalent, key selection criteria include guaranteed military screening (PIND-tested), low 8 ns turn-on time, 35 pF input capacitance for TTL/CMOS direct drive, and thermal resistance of 20 °C/W junction-to-case.

Technical Context

This device uses silicon planar DMOS technology optimized for high-reliability switching in harsh environments. Its gate threshold voltage (0.8–2.0 V typ.) enables direct interface with 3.3 V and 5 V logic, while the drain-source on-resistance remains stable across -55 °C to 125 °C operating range.

The integrated body diode supports unidirectional load control with 0.7–1.6 V forward voltage at 0.99 A. Switching performance is temperature-independent per specification, and the case-connected drain provides mechanical grounding and thermal path integrity in hermetic mounting configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for use in 48 V rail and lower power distribution circuits
R_DS(on)	1.3 Ω @ V_GS = 10 V - Enables <1.3 W conduction loss at 1 A continuous drain current
V_GS(th)	0.8–2.0 V - Ensures reliable turn-on with standard TTL/CMOS outputs without level-shifting
t_ON/t_OFF	8 / 8.5 ns - Supports >100 MHz switching in pulse-width modulated control loops
C_iss	35 pF - Low gate charge (12.5 pC typ.) allows fast edge rates with minimal driver strength
R_thJC	20 °C/W - Enables 6.25 W power dissipation with modest heatsinking in TO-205AD package
I_D (cont)	0.99 A @ T_C = 25 °C - Sustains relay coil or lamp loads without derating in ambient-controlled enclosures

Pinout & Package

2N6660JTXL02 is housed in a hermetically sealed TO-205AD (TO-39 tall lid) metal-can package with case-connected drain. The package meets MIL-STD-19500 screening requirements and supports PIND (Particle Impact Noise Detection) testing per ordering suffix "L02".

Pin/Terminal	Circuit Role	Design Meaning
1 (Top View: Left)	Drain (D)	Electrically connected to metal case - requires isolation from PCB ground plane unless system design intentionally bonds drain to chassis
2 (Top View: Center)	Gate (G)	High-impedance MOSFET control terminal - sensitive to ESD; requires series resistor (≤100 Ω) for robust switching
3 (Top View: Right)	Source (S)	Return path for load current - referenced to system ground when used in low-side switch configuration

Key Features

Feature	Design Value
Military qualification (JANTX)	Screened per MIL-PRF-19500/511 with PIND, burn-in, and lot acceptance testing for aerospace and defense programs
Low V_GS(th)	1.7 V typical - eliminates need for gate boosters in 3.3 V microcontroller-driven applications
Low C_iss	35 pF - reduces dynamic gate drive power and enables clean edges with low-current logic sources
Fast t_ON	8 ns - minimizes transition losses in high-frequency PWM motor or lamp dimming circuits
Case-connected drain	Provides mechanical anchoring and thermal conduction path - simplifies thermal design in conduction-cooled assemblies

Applications

Aerospace Actuation Systems	Solid-State Relay Modules
Use Scenario: Driving hydraulic valve solenoids in flight control surface actuators under extended temperature cycling (-55 °C to +125 °C). IC Role / Device Role / Timing Role: Low-side switching element controlling 24 V DC solenoid coils with precise on/off timing. Use Value: Guaranteed 1.3 Ω R_DS(on) ensures <0.65 W power loss at rated current, reducing thermal stress in sealed avionics enclosures.	Use Scenario: Replacing electromechanical relays in industrial PLC output modules requiring >1 million operations lifetime. IC Role / Device Role / Timing Role: High-reliability power switch interfacing TTL logic to 48 V resistive or inductive loads. Use Value: 8 ns switching speed and PIND-tested construction eliminate contact bounce and ensure consistent timing in safety-critical control paths.
Battery-Powered Test Equipment	Hi-Rel Memory Power Switching
Use Scenario: Enabling/disabling 5 V auxiliary rails in portable calibration instruments powered by Li-ion batteries. IC Role / Device Role / Timing Role: Load switch managing power sequencing with minimal quiescent current (<100 nA IGSS). Use Value: 1.7 V V_GS(th) allows direct control from microcontroller GPIOs, eliminating external level shifters and saving board space.	Use Scenario: Isolating backup SRAM power domains during brown-out conditions in radiation-tolerant computing systems. IC Role / Device Role / Timing Role: Precision-controlled power gate ensuring zero current leakage (<1 μA IDSS) during standby. Use Value: Sub-μA off-state leakage preserves memory state for >10 years in long-term data retention applications.

Aerospace Actuation Systems

Solid-State Relay Modules

Use Scenario: Driving hydraulic valve solenoids in flight control surface actuators under extended temperature cycling (-55 °C to +125 °C).

IC Role / Device Role / Timing Role: Low-side switching element controlling 24 V DC solenoid coils with precise on/off timing.

Use Value: Guaranteed 1.3 Ω R_DS(on) ensures <0.65 W power loss at rated current, reducing thermal stress in sealed avionics enclosures.

Use Scenario: Replacing electromechanical relays in industrial PLC output modules requiring >1 million operations lifetime.

IC Role / Device Role / Timing Role: High-reliability power switch interfacing TTL logic to 48 V resistive or inductive loads.

Use Value: 8 ns switching speed and PIND-tested construction eliminate contact bounce and ensure consistent timing in safety-critical control paths.

Battery-Powered Test Equipment

Hi-Rel Memory Power Switching

Use Scenario: Enabling/disabling 5 V auxiliary rails in portable calibration instruments powered by Li-ion batteries.

IC Role / Device Role / Timing Role: Load switch managing power sequencing with minimal quiescent current (<100 nA IGSS).

Use Value: 1.7 V V_GS(th) allows direct control from microcontroller GPIOs, eliminating external level shifters and saving board space.

Use Scenario: Isolating backup SRAM power domains during brown-out conditions in radiation-tolerant computing systems.

IC Role / Device Role / Timing Role: Precision-controlled power gate ensuring zero current leakage (<1 μA IDSS) during standby.

Use Value: Sub-μA off-state leakage preserves memory state for >10 years in long-term data retention applications.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2N6660JTXV02	JANTXV grade: tighter parametric limits, enhanced screening including 100 % life test, higher reliability assurance	Required for Class V (space-grade) applications where failure rate must meet MIL-HDBK-217F predictions	Select 2N6660JTXV02 when mission-critical operation demands zero latent defects and full traceability to wafer lot
2N6660JTX02	JANTX grade without PIND: same electrical specs but lacks particle contamination screening per MIL-STD-750 Method 2050	Suitable for non-safety-critical military ground systems where cost sensitivity outweighs ultra-high reliability needs	Choose 2N6660JTX02 for cost-optimized JANTX compliance where PIND is not mandated by program spec

Compared with 2N6660JTX02 and 2N6660JTXV02, the 2N6660JTXL02 uniquely delivers PIND-tested reliability at JANTX-level screening-making it optimal for airborne systems where particulate-induced short circuits pose unacceptable risk.

Availability

2N6660JTXL02 is available at Aetrix Electronics and suitable for aerospace actuation systems, solid-state relay modules, and battery-powered test equipment requiring stable component supply across extended product lifecycles.

Supply support for 2N6660JTXL02 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and defense applications.

The 2N6660 family was developed for military and aerospace power switching where guaranteed parametric stability, hermetic packaging, and rigorous process controls are mandatory-not just recommended.

FAQ

What does the "L02" suffix mean in 2N6660JTXL02?

The "L02" suffix in 2N6660JTXL02 indicates PIND (Particle Impact Noise Detection) testing per MIL-STD-750 Method 2050. This screening detects loose conductive particles inside the TO-205AD package that could cause intermittent shorts under vibration or shock. 2N6660JTXL02 is fully compliant with JANTX specifications and includes this additional mechanical reliability verification step beyond standard JANTX screening.

Is 2N6660JTXL02 compatible with standard TO-39 footprints?

Yes, 2N6660JTXL02 uses the TO-205AD (TO-39 tall lid) package with standardized lead spacing and diameter per MIL-STD-1835. Its mechanical dimensions-including CD = 0.305–0.335 inches and LL = 0.500–0.750 inches-are identical to commercial TO-39 devices. However, the case-connected drain requires careful PCB layout to avoid unintended grounding of the drain node.

How does the gate threshold voltage of 2N6660JTXL02 affect drive circuit design?

The 2N6660JTXL02 has a V_GS(th) range of 0.8–2.0 V (typ. 1.7 V), enabling direct drive from 3.3 V or 5 V logic without level shifters. For robust turn-on, apply ≥4.5 V to ensure full enhancement across temperature extremes. At 125 °C, V_GS(th) drops to 0.3 V min., so overdrive margin remains sufficient even in hot environments. Always include a 10 kΩ pull-down resistor on the gate of 2N6660JTXL02 to prevent spurious turn-on.

Can 2N6660JTXL02 be used in high-frequency switching applications?

Yes, 2N6660JTXL02 supports high-frequency operation with 8 ns turn-on and 8.5 ns turn-off times, and low 35 pF input capacitance. Its switching characteristics are temperature-independent per specification. For >1 MHz operation, minimize gate loop inductance using short, wide traces and place a 100 Ω series resistor close to the gate pin. Thermal management remains critical: 2N6660JTXL02's R_thJC of 20 °C/W requires adequate heatsinking to sustain 6.25 W dissipation.

What is the maximum safe operating voltage for 2N6660JTXL02 in repetitive avalanche conditions?

2N6660JTXL02 is not rated for repetitive avalanche operation. Its absolute maximum V_DS is 60 V, and the datasheet specifies no avalanche energy rating (E_AS) or ruggedness testing. In inductive switching applications, always use a properly sized flyback diode or RC snubber to clamp V_DS below 48 V (80 % of rating) to prevent cumulative degradation. Operation above 60 V-even briefly-risks immediate failure of 2N6660JTXL02.

2N6660JTXL02 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-205AD, TO-39-3 Metal Can

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 990mA (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:: 2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 50 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 725mW (Ta), 6.25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-205AD (TO-39)

2N6660JTXL02 FAQ

1.How can I place an order for 2N6660JTXL02 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N6660JTXL02 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N6660JTXL02 reliable?

The price and inventory of 2N6660JTXL02 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N6660JTXL02 is usually 5 days.

3.What payment methods are accepted for 2N6660JTXL02?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N6660JTXL02 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N6660JTXL02?

2N6660JTXL02 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N6660JTXL02 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N6660JTXL02?

For technical support, including 2N6660JTXL02 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N6660JTXL02 requirements.

6.How does Aetrix verify that 2N6660JTXL02 is sourced from the original manufacturer or authorized distributors?

All 2N6660JTXL02 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N6660JTXL02 meets industry standards.

7.What is the process for return or replacement of 2N6660JTXL02?

All 2N6660JTXL02 units undergo pre-shipment inspection (PSI). If there is an issue with 2N6660JTXL02, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N6660JTXL02 part is unused and in its original packaging.

Return procedure for 2N6660JTXL02:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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