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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix 2N6661-E3

Name: 2N6661-E3
Brand: Vishay Siliconix
SKU: 2N6661-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N6661-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-205AD, TO-39-3 Metal Can

Datasheet:: 2N6661-E3.pdf

Description:: MOSFET N-CH 90V 860MA TO39

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Product details

Overview

2N6661-E3 from Vishay Siliconix is an N-channel enhancement-mode MOSFET rated for 90 V drain-source voltage, 4 Ω R_DS(on) at V_GS = 10 V, and 0.86 A continuous drain current at T_C = 25 °C. It features low threshold voltage (1.6 V typ), fast switching (6 ns turn-on), and TO-205AD (TO-39) metal-can package. It serves as a logic-level–driven switch in solid-state relays and battery-operated hi-rel systems.

For engineers reviewing the 2N6661-E3 datasheet, 2N6661-E3 pinout, 2N6661-E3 application, or 2N6661-E3 equivalent, key selection criteria include its military-qualified reliability, low 35 pF input capacitance enabling direct TTL/CMOS drive, and junction-to-case thermal resistance of 20 °C/W for thermally constrained mounting.

Technical Context

This MOSFET operates in enhancement mode with a gate-threshold voltage range of 0.8–2.0 V at 25 °C, supporting reliable turn-on from standard 3.3 V and 5 V logic. Its low R_DS(on) and 170 mS typical transconductance enable efficient power switching at sub-amp load levels.

The device uses a single-die silicon structure in a hermetically sealed TO-205AD package where the drain is electrically connected to the case. Switching performance remains stable across temperature due to intrinsic independence of t_ON/t_OFF from operating junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	90 V - Maximum blocking voltage before avalanche breakdown; suitable for 72 V DC bus switching
R_DS(on)	4 Ω max at V_GS = 10 V - Limits conduction loss to ≤3.4 mW at 0.86 A ID
V_GS(th)	0.8–2.0 V - Ensures full enhancement with 3.3 V logic; no level-shifting required
C_iss	35 pF typ - Enables direct drive from CMOS outputs without gate buffer
t_ON	6 ns - Supports >100 MHz switching in pulsed-load applications
T_J Range	−55 to +150 °C - Qualified for extended-temperature military and aerospace environments
P_D (T_C = 25 °C)	6.25 W - Requires heatsinking above ~1.5 W dissipation in ambient air

Pinout & Package

2N6661-E3 is housed in a TO-205AD (TO-39 tall lid) metal-can package with leads arranged in a triangular layout. The case (tab) is internally connected to the drain terminal and must be electrically isolated or grounded per application requirements.

Pin/Terminal	Circuit Role	Design Meaning
1 (Top View: Left)	Drain (D)	High-side switching node; electrically bonded to metal case; requires isolation or grounding
2 (Top View: Center)	Gate (G)	Control input; low 35 pF C_iss allows direct TTL/CMOS drive without buffering
3 (Top View: Right)	Source (S)	Return path for load current; referenced to system ground in low-side configurations

Key Features

Feature	Design Value
Military qualification (JANTXV-grade lineage)	Meets MIL-PRF-19500/552 requirements; traceable lot history and screening for hi-rel use
Low V_GS(th) (1.6 V typ)	Enables full enhancement from 3.3 V microcontroller GPIOs without external level shifters
Low C_iss (35 pF)	Reduces gate drive power and propagation delay; supports high-frequency PWM control
Fast t_ON/t_OFF (6/8 ns)	Minimizes switching losses in repetitive pulse applications such as solenoid drivers
Hermetic TO-205AD package	Provides long-term reliability in humid, corrosive, or vacuum environments

Applications

Solid-State Relays	Battery-Powered Instruments
Use Scenario: Replacing electromechanical relays in industrial control panels requiring >1 million operations and zero contact bounce. IC Role / Device Role / Timing Role: Power switch controlling 24–48 V DC loads up to 0.86 A; driven directly by PLC output stages. Use Value: Eliminates mechanical wear and EMI from arcing; enables silent, vibration-free operation with <10 ns timing jitter.	Use Scenario: Power gating in portable test equipment with 3.7 V Li-ion supply and strict standby current limits. IC Role / Device Role / Timing Role: Load switch isolating non-critical subsystems during sleep mode; controlled by ultra-low-power MCU. Use Value: Achieves <1 μA off-state leakage (IDSS ≤1 μA at 72 V), preserving battery life over multi-week idle periods.
Hi-Rel Avionics Sensors	TTL/CMOS Direct Interface Circuits
Use Scenario: Driving excitation current for strain-gauge bridges in flight-critical structural monitoring units. IC Role / Device Role / Timing Role: Precision current source switch with stable R_DS(on) over −55 to +125 °C. Use Value: Maintains ±0.5% gain stability across temperature via low R_DS(on) drift (normalized to 1.0 at 25 °C).	Use Scenario: Level-shifting interface between 5 V TTL logic and 90 V analog front-end protection circuits. IC Role / Device Role / Timing Role: Voltage-controlled switch enabling bidirectional signal routing without optocouplers. Use Value: Delivers 6 ns edge fidelity with no added propagation delay-critical for synchronous sampling clocks.

Solid-State Relays

Battery-Powered Instruments

Use Scenario: Replacing electromechanical relays in industrial control panels requiring >1 million operations and zero contact bounce.

IC Role / Device Role / Timing Role: Power switch controlling 24–48 V DC loads up to 0.86 A; driven directly by PLC output stages.

Use Value: Eliminates mechanical wear and EMI from arcing; enables silent, vibration-free operation with <10 ns timing jitter.

Use Scenario: Power gating in portable test equipment with 3.7 V Li-ion supply and strict standby current limits.

IC Role / Device Role / Timing Role: Load switch isolating non-critical subsystems during sleep mode; controlled by ultra-low-power MCU.

Use Value: Achieves <1 μA off-state leakage (IDSS ≤1 μA at 72 V), preserving battery life over multi-week idle periods.

Hi-Rel Avionics Sensors

TTL/CMOS Direct Interface Circuits

Use Scenario: Driving excitation current for strain-gauge bridges in flight-critical structural monitoring units.

IC Role / Device Role / Timing Role: Precision current source switch with stable R_DS(on) over −55 to +125 °C.

Use Value: Maintains ±0.5% gain stability across temperature via low R_DS(on) drift (normalized to 1.0 at 25 °C).

Use Scenario: Level-shifting interface between 5 V TTL logic and 90 V analog front-end protection circuits.

IC Role / Device Role / Timing Role: Voltage-controlled switch enabling bidirectional signal routing without optocouplers.

Use Value: Delivers 6 ns edge fidelity with no added propagation delay-critical for synchronous sampling clocks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2N7000-E3	Lower V_DS (60 V), higher R_DS(on) (5.3 Ω min), same TO-92 package	Not qualified for military temp range or hermetic sealing; limited to commercial-grade instrumentation	Select only for cost-sensitive, non-hi-rel 24 V systems with relaxed thermal and lifetime requirements
DMN2004LK-7	Higher V_DS (200 V), SOT-23 package, 3.5 Ω R_DS(on) at 4.5 V, unqualified for −55 °C operation	Surface-mount only; lacks hermeticity and extended temperature validation	Prefer for space-constrained PCBs where military screening and case bonding are not required

Compared with 2N6661-E3, 2N7000-E3 offers lower cost but sacrifices voltage margin, thermal robustness, and reliability assurance; DMN2004LK-7 provides higher voltage rating and smaller footprint but omits hermetic packaging and extended temperature qualification critical for aerospace deployment.

Availability

2N6661-E3 is available at Aetrix Electronics and suitable for solid-state relays, battery-powered instruments, and hi-rel avionics sensors requiring stable component supply, long-lifecycle support, and traceable military-grade sourcing.

Supply support for 2N6661-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics with emphasis on military, aerospace, and industrial applications.

The 2N6661-E3 belongs to Vishay's legacy high-reliability N-channel MOSFET product line, designed specifically for logic-level–driven switching in mission-critical systems where hermetic sealing, extended temperature operation, and MIL-qualified screening are mandatory.

FAQ

What is the maximum continuous drain current for the 2N6661-E3 at 100 °C case temperature?

The 2N6661-E3 supports 0.54 A continuous drain current at T_C = 100 °C, derated from 0.86 A at 25 °C per its thermal resistance profile. This value is validated under steady-state conditions with proper heatsinking and accounts for R_DS(on) increase at elevated temperature. Designers must verify junction temperature using R_thJC = 20 °C/W and actual power dissipation in the 2N6661-E3 application layout.

Is the 2N6661-E3 pin-compatible with the commercial 2N6661 variant?

Yes-the 2N6661-E3 shares identical TO-205AD (TO-39) package dimensions, lead configuration, and pinout (Drain–Gate–Source) with the base 2N6661. Both use lead (Pb)-free terminations, and electrical specifications are fully aligned per Vishay document 70225. No PCB layout changes are needed when upgrading from 2N6661 to 2N6661-E3.

Does the 2N6661-E3 have a body diode, and what is its forward voltage?

Yes, the 2N6661-E3 integrates an inherent parasitic body diode with V_SD = 0.7–1.4 V at I_S = 0.86 A and T_A = 25 °C. This diode enables freewheeling in inductive load circuits like relay coils and solenoids. Its low forward drop minimizes energy loss during flyback recovery, and it is rated for continuous conduction within the device's thermal limits.

What is the gate-source voltage limit for the 2N6661-E3, and why does it matter?

The 2N6661-E3 specifies ±20 V maximum gate-source voltage (V_GS). Exceeding this risks irreversible oxide damage to the gate dielectric. In practice, drive circuits must clamp V_GS to ≤15 V for safety margin, especially during transient events. This limit directly governs driver selection and ESD protection design around the 2N6661-E3 gate terminal.

How does the 2N6661-E3 perform in terms of thermal resistance, and what mounting considerations apply?

The 2N6661-E3 has R_thJC = 20 °C/W (junction-to-case) and R_thJA = 170 °C/W (junction-to-ambient). Because the drain is tied to the metal case, effective thermal management requires direct mechanical and thermal contact between the case and a heatsink or chassis ground plane. Insulating pads must be rated for ≥200 V and low thermal resistance to avoid de-rating the 2N6661-E3's power capability.

2N6661-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-205AD, TO-39-3 Metal Can

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 90 V

Current - Continuous Drain (Id) @ 25°C:: 860mA (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 4Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:: 2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 50 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 725mW (Ta), 6.25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-39

2N6661-E3 FAQ

1.How can I place an order for 2N6661-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N6661-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N6661-E3 reliable?

The price and inventory of 2N6661-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N6661-E3 is usually 5 days.

3.What payment methods are accepted for 2N6661-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N6661-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N6661-E3?

2N6661-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N6661-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N6661-E3?

For technical support, including 2N6661-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N6661-E3 requirements.

6.How does Aetrix verify that 2N6661-E3 is sourced from the original manufacturer or authorized distributors?

All 2N6661-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N6661-E3 meets industry standards.

7.What is the process for return or replacement of 2N6661-E3?

All 2N6661-E3 units undergo pre-shipment inspection (PSI). If there is an issue with 2N6661-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N6661-E3 part is unused and in its original packaging.

Return procedure for 2N6661-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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