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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix 2N6661JAN02

Name: 2N6661JAN02
Brand: Vishay Siliconix
SKU: 2N6661JAN02
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N6661JAN02

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-205AD, TO-39-3 Metal Can

Datasheet:: 2N6661JAN02.pdf

Description:: MOSFET N-CH 90V 860MA TO39

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Product details

Overview

2N6661JAN02 from Vishay Siliconix is a military-qualified N-channel enhancement-mode MOSFET with 90 V drain-source rating, 3.6 Ω R_DS(on) at V_GS = 10 V, 1.6 V gate threshold, and TO-205AD (TO-39) metal-can package. It serves as a low-voltage logic-level switch in solid-state relays, solenoid drivers, and battery-powered hi-rel systems.

For engineers reviewing the 2N6661JAN02 datasheet, 2N6661JAN02 pinout, 2N6661JAN02 application, or 2N6661JAN02 equivalent, key selection criteria include its guaranteed 1.6 V V_GS(th) max at 25 °C, 6 ns turn-on time, 35 pF C_iss, -55 to +150 °C operating range, and JANTX-level screening per MIL-PRF-19500/514.

Technical Context

This device operates as a single N-channel switching transistor with enhancement-mode gate control. Its low 1.6 V typical V_GS(th) enables direct TTL/CMOS interface without level-shifting, while the 3.6 Ω R_DS(on) at 10 V ensures minimal conduction loss at 1 A drain current.

The TO-205AD package integrates the drain directly to the case for low-inductance power path and thermal conduction. Switching performance is characterized by 6 ns t_ON and 8 ns t_OFF under 25 V V_DD, 23 Ω gate drive, and 1 A load - values confirmed independent of junction temperature per datasheet note.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Max	90 V - supports operation up to 72 V DC bus in relay/solenoid driver circuits
R_DS(on)	3.6 Ω @ V_GS = 10 V, I_D = 1 A - delivers ≤3.6 W conduction loss at full rated current
V_GS(th)	0.8–2.0 V @ I_D = 1 mA - ensures reliable turn-on with 3.3 V or 5 V logic signals
C_iss	35 pF typical @ V_GS = 0 V, V_DS = 25 V - reduces gate drive power and enables fast edge rates
t_ON/t_OFF	6 ns / 8 ns @ V_DD = 25 V, R_g = 23 Ω - supports >50 MHz switching in pulse-width modulated loads
P_D (T_C = 25 °C)	6.25 W - allows continuous 0.86 A drain current with heatsink or forced-air cooling
T_J Range	-55 to +150 °C - qualified for extended-temperature military and aerospace environments

Pinout & Package

2N6661JAN02 uses the TO-205AD (TO-39 tall lid) metal-can package with case-connected drain. The three leads are arranged in standard top-view configuration: Pin 1 = Drain (case), Pin 2 = Gate, Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Case & Lead)	Drain	Electrically connected to metal can - provides low-inductance power return and thermal path to heatsink
Pin 2	Gate	Control terminal requiring ≤100 nA leakage at ±20 V - compatible with CMOS/TTL logic drive
Pin 3	Source	Reference node for gate drive; tied to system ground in low-side switch configurations

Key Features

Feature	Design Value
Military qualification	JANTX screening per MIL-PRF-19500/514 - includes burn-in, temperature cycling, and parametric lot acceptance
Low gate threshold	1.6 V typical V_GS(th) - enables direct interface with 3.3 V microcontrollers without gate driver ICs
Low input capacitance	35 pF C_iss - minimizes gate charge (Q_g = 12.5 pC) and drive power in high-frequency switching
Fast switching	6 ns t_ON, 8 ns t_OFF - supports clean digital waveform generation in pulse circuits and timing applications
Thermal robustness	R_thJC = 20 °C/W - enables 6.25 W dissipation with modest heatsinking in compact enclosures

Applications

Solid-State Relay Control	Logic-Level Solenoid Driver
Use Scenario: Replacing electromechanical relays in avionics power distribution units where vibration resistance and long life are critical. IC Role / Device Role / Timing Role: Low-side N-channel switch controlling 24–48 V DC solenoid loads up to 0.86 A continuous. Use Value: Eliminates contact bounce and wear; 3.6 Ω R_DS(on) limits voltage drop to <3.7 V at 1 A, preserving coil actuation margin.	Use Scenario: Driving fuel injector solenoids in ruggedized engine control modules operating across -55 to +125 °C ambient. IC Role / Device Role / Timing Role: High-speed switching element triggered by 5 V MCU PWM output with 6 ns turn-on for precise fuel metering. Use Value: 6 ns t_ON enables sub-microsecond pulse resolution; JANTX screening ensures reliability under thermal shock and radiation exposure.
Battery-Powered Hi-Rel Interface	TTL-Compatible Lamp/Display Driver
Use Scenario: Power switching in portable military radios and handheld test equipment powered by 9–12 V Li-ion packs. IC Role / Device Role / Timing Role: Load switch enabling/disabling subsystems with zero standby current via logic-controlled gate. Use Value: 100 nA I_GSS at ±20 V ensures negligible battery drain during sleep mode; -55 °C start-up capability supports arctic deployment.	Use Scenario: Driving LED arrays and vacuum fluorescent displays in legacy instrumentation panels using 5 V TTL outputs. IC Role / Device Role / Timing Role: Current-sinking driver stage interfacing TTL logic to 12 V lamp loads with fast on/off transitions. Use Value: 1.6 V V_GS(th) guarantees turn-on with 3.5 V TTL HIGH; 0.9 V typical V_SD minimizes forward drop in body diode conduction.

Solid-State Relay Control

Logic-Level Solenoid Driver

Use Scenario: Replacing electromechanical relays in avionics power distribution units where vibration resistance and long life are critical.

IC Role / Device Role / Timing Role: Low-side N-channel switch controlling 24–48 V DC solenoid loads up to 0.86 A continuous.

Use Value: Eliminates contact bounce and wear; 3.6 Ω R_DS(on) limits voltage drop to <3.7 V at 1 A, preserving coil actuation margin.

Use Scenario: Driving fuel injector solenoids in ruggedized engine control modules operating across -55 to +125 °C ambient.

IC Role / Device Role / Timing Role: High-speed switching element triggered by 5 V MCU PWM output with 6 ns turn-on for precise fuel metering.

Use Value: 6 ns t_ON enables sub-microsecond pulse resolution; JANTX screening ensures reliability under thermal shock and radiation exposure.

Battery-Powered Hi-Rel Interface

TTL-Compatible Lamp/Display Driver

Use Scenario: Power switching in portable military radios and handheld test equipment powered by 9–12 V Li-ion packs.

IC Role / Device Role / Timing Role: Load switch enabling/disabling subsystems with zero standby current via logic-controlled gate.

Use Value: 100 nA I_GSS at ±20 V ensures negligible battery drain during sleep mode; -55 °C start-up capability supports arctic deployment.

Use Scenario: Driving LED arrays and vacuum fluorescent displays in legacy instrumentation panels using 5 V TTL outputs.

IC Role / Device Role / Timing Role: Current-sinking driver stage interfacing TTL logic to 12 V lamp loads with fast on/off transitions.

Use Value: 1.6 V V_GS(th) guarantees turn-on with 3.5 V TTL HIGH; 0.9 V typical V_SD minimizes forward drop in body diode conduction.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2N6660JAN02	Lower V_DS = 60 V; R_DS(on) = 5.5 Ω @ 10 V; same TO-205AD package and JANTX screening	Not suitable for 72 V bus applications; limited to ≤48 V systems	Select when lower voltage rating and higher on-resistance are acceptable for cost-sensitive hi-rel designs
2N7000-TP	Commercial-grade SOT-23; V_DS = 60 V; R_DS(on) = 5.0 Ω @ 4.5 V; no military screening or extended temperature range	Lacks MIL-PRF-19500 qualification; unsuitable for aerospace or defense deployments	Use only in non-critical commercial battery devices where size and cost outweigh reliability requirements

Compared with 2N6661JAN02, the 2N6660JAN02 offers identical packaging and screening but reduced voltage headroom, while the 2N7000-TP sacrifices military reliability and thermal range for footprint and cost - making 2N6661JAN02 the sole choice for 90 V, -55 °C to +150 °C, JANTX-qualified switching.

Availability

2N6661JAN02 is available at Aetrix Electronics and suitable for solid-state relay control, logic-level solenoid driving, and battery-powered hi-rel interface applications requiring stable component supply across extended temperature and military screening requirements.

Supply support for 2N6661JAN02 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-performance power solutions.

The 2N6661JAN02 belongs to Vishay's legacy military MOSFET product line, designed specifically for analog and digital switching in defense electronics, avionics, and space-qualified systems where extended temperature operation and MIL-PRF-19500 compliance are mandatory.

FAQ

What is the gate threshold voltage specification for 2N6661JAN02?

The 2N6661JAN02 has a gate-source threshold voltage V_GS(th) of 0.8 V minimum, 1.6 V typical, and 2.0 V maximum at I_D = 1 mA and T_A = 25 °C. At -55 °C, the upper limit rises to 2.5 V; at 125 °C, it drops to 1.3 V max. This ensures consistent logic-level compatibility across its full military temperature range.

Is 2N6661JAN02 pin-compatible with commercial 2N6661 variants?

Yes, 2N6661JAN02 shares the identical TO-205AD (TO-39) package and pinout - Pin 1 (Drain/case), Pin 2 (Gate), Pin 3 (Source) - with all 2N6661 family members including 2N6661, 2N6661JANTX, and 2N6661JANTXV. Mechanical and electrical pin alignment is maintained across all variants.

What is the maximum continuous drain current for 2N6661JAN02 at 100 °C case temperature?

The 2N6661JAN02 supports 0.54 A continuous drain current at T_C = 100 °C, derated from 0.86 A at 25 °C. This linear derating reflects its 20 °C/W junction-to-case thermal resistance and 150 °C maximum junction temperature, ensuring safe operation in convection-cooled military chassis.

Does 2N6661JAN02 include integrated ESD protection?

No, the 2N6661JAN02 does not incorporate on-die ESD protection circuitry. Its gate oxide is rated for ±20 V V_GS, and handling requires standard MOSFET ESD precautions. External gate resistors and TVS diodes are recommended in high-noise environments such as vehicle or aircraft power systems.

What is the drain-source on-resistance of 2N6661JAN02 at elevated temperature?

At T_J = 125 °C, the 2N6661JAN02 exhibits R_DS(on) of 6.7 Ω minimum to 7.5 Ω maximum at V_GS = 10 V and I_D = 1 A. This ~85 % increase over room-temperature value (3.6 Ω typ) is fully characterized and accounted for in military derating guidelines.

2N6661JAN02 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-205AD, TO-39-3 Metal Can

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 90 V

Current - Continuous Drain (Id) @ 25°C:: 860mA (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 4Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:: 2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 50 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 725mW (Ta), 6.25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-39

2N6661JAN02 FAQ

1.How can I place an order for 2N6661JAN02 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N6661JAN02 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N6661JAN02 reliable?

The price and inventory of 2N6661JAN02 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N6661JAN02 is usually 5 days.

3.What payment methods are accepted for 2N6661JAN02?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N6661JAN02 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N6661JAN02?

2N6661JAN02 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N6661JAN02 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N6661JAN02?

For technical support, including 2N6661JAN02 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N6661JAN02 requirements.

6.How does Aetrix verify that 2N6661JAN02 is sourced from the original manufacturer or authorized distributors?

All 2N6661JAN02 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N6661JAN02 meets industry standards.

7.What is the process for return or replacement of 2N6661JAN02?

All 2N6661JAN02 units undergo pre-shipment inspection (PSI). If there is an issue with 2N6661JAN02, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N6661JAN02 part is unused and in its original packaging.

Return procedure for 2N6661JAN02:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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