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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix 2N6661JTX02

Name: 2N6661JTX02
Brand: Vishay Siliconix
SKU: 2N6661JTX02
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N6661JTX02

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-205AD, TO-39-3 Metal Can

Datasheet:: 2N6661JTX02.pdf

Description:: MOSFET N-CH 90V 860MA TO39

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Product details

Overview

2N6661JTX02 from Vishay Siliconix is a military-qualified N-channel enhancement-mode MOSFET designed for low-voltage, high-reliability switching in space-constrained analog and digital interface circuits. It features 90 V drain-source breakdown voltage, 3.6 Ω R_DS(on) at V_GS = 10 V, 1.6 V gate threshold voltage, 35 pF input capacitance, and 6 ns turn-on time - enabling direct TTL/CMOS logic-level drive in solid-state relay and solenoid control applications.

For engineers reviewing the 2N6661JTX02 datasheet, 2N6661JTX02 pinout, 2N6661JTX02 application, or 2N6661JTX02 equivalent, key selection criteria include its JANTX-level qualification with soldered leads, TO-205AD (TO-39) metal-can package, guaranteed -55 °C to +150 °C operation, and verified low-leakage performance under extended temperature stress.

Technical Context

This device operates as a single N-channel power switch with drain connected to case, requiring isolated mounting when case bias differs from system ground. Its low 1.6 V V_GS(th) enables reliable turn-on from 3.3 V and 5 V logic families without level-shifting circuitry.

Thermal design centers on R_thJC = 20 °C/W and R_thJA = 170 °C/W, with pulsed drain current limited to 3 A by junction temperature constraints. Switching behavior is stable across temperature due to intrinsic independence of t_ON/t_OFF from operating junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	90 V - supports rail voltages up to 72 V DC in Hi-Rel systems without breakdown risk
R_DS(on)	3.6 Ω at V_GS = 10 V - delivers ≤0.86 A continuous drain current with <1.5 V conduction drop
V_GS(th)	1.6 V typical - ensures full enhancement with standard 3.3 V or 5 V logic outputs
C_iss	35 pF - minimizes gate drive power and allows direct microcontroller GPIO driving
t_ON	6 ns - enables >100 MHz switching in pulse-width modulation and timing-critical drivers
I_DSS	1 μA at V_DS = 72 V - guarantees negligible off-state leakage in battery-operated systems
P_D	6.25 W at T_C = 25 °C - requires heatsinking above ~0.5 W sustained dissipation in sealed enclosures

Pinout & Package

2N6661JTX02 uses the TO-205AD (TO-39 tall lid) metal-can package with case-connected drain. The hermetically sealed package meets MIL-PRF-19500 requirements and supports soldered lead attachment per JANTX specification.

Pin/Terminal	Circuit Role	Design Meaning
1 (Top View: Left)	Drain (D)	Electrically tied to metal case - must be electrically isolated from heatsink unless referenced to same potential
2 (Top View: Center)	Gate (G)	High-impedance control terminal - sensitive to ESD; requires gate resistor for robust switching
3 (Top View: Right)	Source (S)	Reference node for gate drive; forms return path for load current and defines V_GS reference

Key Features

Feature	Design Value
Military qualification (JANTX)	Screened per MIL-PRF-19500/505, including burn-in, temperature cycling, and PIND testing
Low V_GS(th) (1.6 V typ.)	Enables direct interface with 3.3 V FPGA I/O banks and low-power microcontrollers without gate buffers
Case-connected drain	Reduces thermal resistance to heatsink but mandates electrical isolation unless drain is system ground
Low C_iss (35 pF)	Limits gate charge to ~15 pC - reduces driver power loss and simplifies layout in high-density PCBs
Guaranteed R_DS(on) ≤ 4 Ω	Ensures predictable conduction loss across -55 °C to +125 °C, critical for unregulated battery systems

Applications

Solid-State Relay Control	TTL/CMOS Direct Interface
Use Scenario: Driving 24 V DC solenoids and indicator lamps in avionics landing gear sequencers where vibration and temperature extremes demand zero failure tolerance. IC Role / Device Role / Timing Role: Low-side switch controlling load current path; operates in linear or saturated mode depending on gate drive level. Use Value: 3.6 Ω R_DS(on) limits I²R loss to <2.7 mW at 0.86 A, minimizing self-heating in sealed modules.	Use Scenario: Replacing bipolar transistors in legacy 5 V TTL logic-driven display multiplexers and memory address decoders aboard satellite payload controllers. IC Role / Device Role / Timing Role: Voltage-controlled current sink replacing BJT-based level shifters; leverages low V_GS(th) for rail-to-rail compatibility. Use Value: 6 ns t_ON supports >10 MHz multiplexing rates without propagation delay skew across channels.
Battery-Powered Instrumentation	Hi-Rel Power Sequencing
Use Scenario: Enabling/disabling sensor bias rails in portable radiation detection equipment powered by Li-SOCl₂ cells with 20-year shelf life requirements. IC Role / Device Role / Timing Role: Load switch isolating downstream analog front-end circuitry during standby; operated by ultra-low-leakage MCU GPIO. Use Value: 1 μA I_DSS at 72 V ensures <1 nA standby current per channel - preserving battery capacity over decades.	Use Scenario: Controlling power-up sequence of FPGA configuration banks and ADC reference supplies in missile guidance electronics. IC Role / Device Role / Timing Role: Precision timing element in discrete RC-delayed enable chains; gate capacitance tightly specified for repeatable delay. Use Value: 35 pF C_iss ±15% tolerance enables ±3% delay accuracy in 1–10 ms sequencing windows.

Solid-State Relay Control

TTL/CMOS Direct Interface

Use Scenario: Driving 24 V DC solenoids and indicator lamps in avionics landing gear sequencers where vibration and temperature extremes demand zero failure tolerance.

IC Role / Device Role / Timing Role: Low-side switch controlling load current path; operates in linear or saturated mode depending on gate drive level.

Use Value: 3.6 Ω R_DS(on) limits I²R loss to <2.7 mW at 0.86 A, minimizing self-heating in sealed modules.

Use Scenario: Replacing bipolar transistors in legacy 5 V TTL logic-driven display multiplexers and memory address decoders aboard satellite payload controllers.

IC Role / Device Role / Timing Role: Voltage-controlled current sink replacing BJT-based level shifters; leverages low V_GS(th) for rail-to-rail compatibility.

Use Value: 6 ns t_ON supports >10 MHz multiplexing rates without propagation delay skew across channels.

Battery-Powered Instrumentation

Hi-Rel Power Sequencing

Use Scenario: Enabling/disabling sensor bias rails in portable radiation detection equipment powered by Li-SOCl₂ cells with 20-year shelf life requirements.

IC Role / Device Role / Timing Role: Load switch isolating downstream analog front-end circuitry during standby; operated by ultra-low-leakage MCU GPIO.

Use Value: 1 μA I_DSS at 72 V ensures <1 nA standby current per channel - preserving battery capacity over decades.

Use Scenario: Controlling power-up sequence of FPGA configuration banks and ADC reference supplies in missile guidance electronics.

IC Role / Device Role / Timing Role: Precision timing element in discrete RC-delayed enable chains; gate capacitance tightly specified for repeatable delay.

Use Value: 35 pF C_iss ±15% tolerance enables ±3% delay accuracy in 1–10 ms sequencing windows.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2N6660JTX02	Lower V_DS = 60 V; identical R_DS(on), V_GS(th), and package	Restricted to ≤48 V systems; unsuitable for 72 V Hi-Rel bus architectures	Select only when maximum drain voltage is confirmed ≤60 V and cost sensitivity outweighs voltage margin
2N7000-E3	Commercial-grade TO-92; V_DS = 60 V, R_DS(on) = 5 Ω, no military screening	Lacks PIND, burn-in, and temperature cycling validation; not rated for aerospace deployment	Acceptable for lab prototypes or non-critical industrial controls where qualification traceability is not required

Compared with 2N6661JTX02, the 2N6660JTX02 offers identical drive characteristics but sacrifices 30 V voltage headroom, while the 2N7000-E3 reduces cost and size at the expense of reliability assurance, thermal robustness, and hermetic sealing - making it unsuitable for mission-critical deployments.

Availability

2N6661JTX02 is available at Aetrix Electronics and suitable for solid-state relay control, TTL/CMOS direct interface, and battery-powered instrumentation requiring stable component supply across extended temperature ranges and long-lifecycle programs.

Supply support for 2N6661JTX02 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors with emphasis on high-reliability, high-performance power and signal components for aerospace, defense, and industrial markets.

The 2N6661JTX02 belongs to Vishay's military-qualified silicon MOSFET product line, engineered specifically for logic-level switching in harsh-environment systems where long-term parametric stability and failure-rate predictability are mandatory.

FAQ

What is the qualified temperature range for 2N6661JTX02?

The 2N6661JTX02 is fully characterized and screened for operation from -55 °C to +150 °C. This includes guaranteed parameters such as V_GS(th), R_DS(on), and I_DSS across that full range, with thermal derating applied above T_C = 100 °C per the absolute maximum ratings table. The 2N6661JTX02 meets MIL-STD-883 requirements for temperature cycling and storage.

Is 2N6661JTX02 pin-compatible with commercial 2N6661 variants?

Yes - the 2N6661JTX02 shares identical TO-205AD (TO-39) mechanical outline and pin assignment (Drain-Gate-Source) with all 2N6661 family members, including 2N6661, 2N6661-E3, and 2N6661JANTX. However, only the JTX02 variant includes soldered leads per DSCC drawing requirements; lead finish and plating differ from Au-lead versions.

Does 2N6661JTX02 have a body diode, and what is its forward voltage?

Yes, the 2N6661JTX02 integrates an inherent parasitic body diode between source and drain. Its forward voltage V_SD is specified as 0.9 V typical at I_S = 0.86 A and T_A = 25 °C. This diode is not rated for continuous conduction but provides freewheeling capability in inductive load switching applications involving the 2N6661JTX02.

What is the gate charge requirement for 2N6661JTX02?

The total gate charge Q_g for 2N6661JTX02 is 15 pC typical at V_DS = 45 V and I_D = 1.0 A. This low value enables fast switching with minimal driver power consumption and allows direct drive from low-current GPIO pins when paired with a series gate resistor to control dV/dt and ringing.

How does the case-connected drain affect PCB layout for 2N6661JTX02?

Because the drain terminal is electrically bonded to the metal case of the 2N6661JTX02, the mounting surface must either be at the same potential as the drain node or electrically insulated using a thermally conductive but dielectric pad or washer. Failure to isolate the case from other potentials may cause short circuits or ground loops in multi-rail systems using the 2N6661JTX02.

2N6661JTX02 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-205AD, TO-39-3 Metal Can

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 90 V

Current - Continuous Drain (Id) @ 25°C:: 860mA (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 4Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:: 2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 50 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 725mW (Ta), 6.25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-39

2N6661JTX02 FAQ

1.How can I place an order for 2N6661JTX02 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N6661JTX02 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N6661JTX02 reliable?

The price and inventory of 2N6661JTX02 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N6661JTX02 is usually 5 days.

3.What payment methods are accepted for 2N6661JTX02?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N6661JTX02 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N6661JTX02?

2N6661JTX02 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N6661JTX02 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N6661JTX02?

For technical support, including 2N6661JTX02 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N6661JTX02 requirements.

6.How does Aetrix verify that 2N6661JTX02 is sourced from the original manufacturer or authorized distributors?

All 2N6661JTX02 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N6661JTX02 meets industry standards.

7.What is the process for return or replacement of 2N6661JTX02?

All 2N6661JTX02 units undergo pre-shipment inspection (PSI). If there is an issue with 2N6661JTX02, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N6661JTX02 part is unused and in its original packaging.

Return procedure for 2N6661JTX02:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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