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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix 2N6661JTXP02

Name: 2N6661JTXP02
Brand: Vishay Siliconix
SKU: 2N6661JTXP02
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N6661JTXP02

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-205AD, TO-39-3 Metal Can

Datasheet:: 2N6661JTXP02.pdf

Description:: MOSFET N-CH 90V 860MA TO39

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2N6661JTXP02 from Vishay Siliconix is a military-qualified N-channel enhancement-mode MOSFET with 90 V drain-source rating, 3.6 Ω R_DS(on) at V_GS = 10 V, 1.6 V gate threshold voltage, 35 pF input capacitance, and TO-205AD (TO-39) metal-can package - used in high-reliability relay drivers and solid-state switching for aerospace power control.

For engineers reviewing the 2N6661JTXP02 datasheet, 2N6661JTXP02 pinout, 2N6661JTXP02 application, or 2N6661JTXP02 equivalent, key selection criteria include guaranteed military screening (JANTX), low-voltage logic-level drive compatibility (TTL/CMOS), thermal resistance of 20 °C/W junction-to-case, and pulsed drain current capability up to 3 A.

Technical Context

This device operates as a single N-channel silicon MOSFET with enhancement-mode gate control, designed for DC and low-frequency switching where reliability under extreme temperature (-55 to +150 °C) and radiation-tolerant environments is required. Its 90 V V_DS rating and 0.86 A continuous drain current at T_C = 25 °C support medium-power load switching in constrained thermal envelopes.

The 2N6661JTXP02 features low input capacitance (35 pF typ.) and fast switching (6 ns turn-on), enabling direct interface with TTL/CMOS without buffer stages. Drain is internally connected to the case per TO-205AD mechanical specification, requiring insulated mounting in grounded-case configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	90 V - Maximum blocking voltage between drain and source; defines upper limit for DC supply rail compatibility.
R_DS(on) @ V_GS = 10 V	3.6 Ω - On-resistance determines conduction loss and self-heating at 1 A load; impacts thermal design margin.
V_GS(th)	1.6 V (typ.) - Gate threshold enables reliable turn-on from 3.3 V or 5 V logic; supports direct CMOS/TTL drive.
C_iss	35 pF - Low input capacitance reduces gate drive power and speeds switching; minimizes Miller effect in hard-switching.
t_ON	6 ns - Fast turn-on time enables high-frequency PWM operation up to ~10 MHz in low-duty-cycle applications.
P_D @ T_C = 25 °C	6.25 W - Power dissipation limit at case temperature 25 °C; requires heatsinking above ~1.5 W sustained load.
R_thJC	20 °C/W - Junction-to-case thermal resistance defines minimum heatsink requirement for safe 150 °C junction operation.

Pinout & Package

2N6661JTXP02 is housed in a hermetically sealed TO-205AD (TO-39 tall lid) metal-can package with three leads: Drain (case-connected), Gate, and Source. Mounting requires electrical isolation of the case when drain is not at system ground.

Pin/Terminal	Circuit Role	Design Meaning
1 (Top View, Left)	Drain (D)	Connected directly to metal case; must be electrically isolated from heatsink unless circuit ground reference matches drain potential.
2 (Top View, Center)	Gate (G)	High-impedance MOSFET control terminal; driven by low-current logic; sensitive to ESD and overvoltage beyond ±20 V.
3 (Top View, Right)	Source (S)	Reference node for gate drive; common return path for load current; establishes V_GS bias relative to gate.

Key Features

Feature	Design Value
Military qualification (JANTX)	Screened per MIL-PRF-19500/417; includes burn-in, temperature cycling, and lot acceptance testing for aerospace use.
Low V_GS(th) (1.6 V typ.)	Enables full enhancement with 3.3 V or 5 V logic outputs - eliminates need for level-shifting or gate driver ICs.
Case-connected drain	Reduces package inductance and improves thermal path; mandates insulating hardware in non-ground-referenced drain circuits.
Low C_iss (35 pF)	Minimizes gate charge (Q_g ≈ 12.5 pC) and drive energy - supports efficient low-power microcontroller-based switching.
Fast t_ON/t_OFF (6 ns / 8 ns)	Reduces switching losses in pulse-width modulated loads; suitable for solenoid and relay coil driving with <100 ns total transition.

Applications

Aerospace Actuator Control	Solid-State Relay Module
Use Scenario: Driving hydraulic valve solenoids in flight control systems where ambient temperature ranges from -55 °C to +125 °C and failure is not acceptable. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling 24 V DC solenoid loads up to 0.86 A continuous. Use Value: JANTX screening ensures operational reliability across thermal extremes; 90 V rating provides margin against load dump transients.	Use Scenario: Replacing electromechanical relays in avionics power distribution units requiring silent, bounce-free, and wear-free switching. IC Role / Device Role / Timing Role: Output stage MOSFET in opto-isolated SSR architecture, switching 28 V DC loads with TTL-compatible input. Use Value: 1.6 V V_GS(th) allows direct drive from optocoupler output; case-connected drain simplifies PCB layout and thermal management.
Battery-Powered Telemetry Transmitter	Hi-Rel Memory Backup Switch
Use Scenario: Enabling/disabling RF power amplifier stages in satellite UHF telemetry transmitters during sleep/wake cycles. IC Role / Device Role / Timing Role: Load switch isolating PA supply rail; controlled by low-power MCU GPIO with minimal quiescent current draw. Use Value: Sub-μA IDSS (<1 μA at 72 V) prevents battery drain during standby; fast 6 ns turn-on enables precise duty-cycled RF bursts.	Use Scenario: Providing seamless backup power path from main supply to SRAM in radiation-hardened flight computers during brownout events. IC Role / Device Role / Timing Role: OR-ing switch selecting between primary and backup 5 V rails; configured with low R_DS(on) to minimize voltage drop. Use Value: 3.6 Ω R_DS(on) limits voltage drop to <3.6 mV at 1 mA backup current - preserves SRAM data retention voltage margin.

Aerospace Actuator Control

Solid-State Relay Module

Use Scenario: Driving hydraulic valve solenoids in flight control systems where ambient temperature ranges from -55 °C to +125 °C and failure is not acceptable.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling 24 V DC solenoid loads up to 0.86 A continuous.

Use Value: JANTX screening ensures operational reliability across thermal extremes; 90 V rating provides margin against load dump transients.

Use Scenario: Replacing electromechanical relays in avionics power distribution units requiring silent, bounce-free, and wear-free switching.

IC Role / Device Role / Timing Role: Output stage MOSFET in opto-isolated SSR architecture, switching 28 V DC loads with TTL-compatible input.

Use Value: 1.6 V V_GS(th) allows direct drive from optocoupler output; case-connected drain simplifies PCB layout and thermal management.

Battery-Powered Telemetry Transmitter

Hi-Rel Memory Backup Switch

Use Scenario: Enabling/disabling RF power amplifier stages in satellite UHF telemetry transmitters during sleep/wake cycles.

IC Role / Device Role / Timing Role: Load switch isolating PA supply rail; controlled by low-power MCU GPIO with minimal quiescent current draw.

Use Value: Sub-μA IDSS (<1 μA at 72 V) prevents battery drain during standby; fast 6 ns turn-on enables precise duty-cycled RF bursts.

Use Scenario: Providing seamless backup power path from main supply to SRAM in radiation-hardened flight computers during brownout events.

IC Role / Device Role / Timing Role: OR-ing switch selecting between primary and backup 5 V rails; configured with low R_DS(on) to minimize voltage drop.

Use Value: 3.6 Ω R_DS(on) limits voltage drop to <3.6 mV at 1 mA backup current - preserves SRAM data retention voltage margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2N6660JTXP02	Lower V_DS (60 V), higher R_DS(on) (5.5 Ω), same TO-205AD package and JANTX screening.	Not suitable for 72 V load-dump tolerant designs; limited to ≤60 V rail applications.	Select only if system maximum voltage is ≤60 V and higher on-resistance is acceptable for thermal budget.
2N7000-E3	Commercial-grade, 60 V V_DS, 5.3 Ω R_DS(on), TO-92 package, no military screening or case-connected drain.	Lacks environmental ruggedness, thermal performance, and reliability validation for aerospace deployment.	Use only in non-critical, commercial, room-temperature applications where cost and size outweigh reliability requirements.

Compared with 2N6661JTXP02, the 2N6660JTXP02 offers lower voltage rating but identical form factor and screening, while the 2N7000-E3 sacrifices military qualification, thermal capability, and case bonding for cost and footprint - making neither a drop-in replacement.

Availability

2N6661JTXP02 is available at Aetrix Electronics and suitable for aerospace actuator control, solid-state relay modules, and battery-powered telemetry transmitters requiring stable component supply with guaranteed long-term obsolescence management.

Supply support for 2N6661JTXP02 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and defense applications.

The 2N6661JTXP02 belongs to Vishay's legacy military MOSFET product line, engineered for high-reliability analog switching in aerospace, avionics, and space-qualified systems where parameter stability across temperature and lifetime is critical.

FAQ

What is the gate-source voltage rating for the 2N6661JTXP02?

The 2N6661JTXP02 has a maximum gate-source voltage rating of ±20 V. This absolute limit must not be exceeded during operation or handling, as transient overvoltage can cause irreversible gate oxide damage. The typical gate threshold voltage is 1.6 V, allowing reliable turn-on with standard 3.3 V or 5 V logic signals. Always use series gate resistors and clamping diodes in high-noise environments to protect the 2N6661JTXP02 gate terminal.

Is the drain of the 2N6661JTXP02 electrically connected to the case?

Yes, the drain of the 2N6661JTXP02 is internally bonded to the metal case per TO-205AD mechanical specification. This configuration provides low-inductance, low-thermal-resistance conduction but requires electrical isolation (e.g., shoulder washers, silicone pads) when mounting to a heatsink that is not at drain potential. Failure to isolate may result in short circuits or compromised safety grounding in the 2N6661JTXP02 application.

What does the "JTXP02" suffix indicate in 2N6661JTXP02?

The "JTXP02" suffix identifies this as a JANTX-qualified version with solder pre-coated leads (per DSCC specification). "JTX" denotes JANTX screening level, and "P02" specifies lead finish with 100% tin solder plating - eliminating lead-free assembly concerns and ensuring compatibility with traditional SnPb reflow profiles. This distinguishes the 2N6661JTXP02 from bare-gold ("JTX02") or PIND-tested ("JTXL02") variants.

Can the 2N6661JTXP02 replace a 2N7000 in a high-reliability design?

No, the 2N6661JTXP02 cannot directly replace a 2N7000 in high-reliability designs due to fundamental differences: the 2N6661JTXP02 is JANTX-screened, TO-205AD packaged, drain-case bonded, and rated for -55 to +150 °C operation, whereas the 2N7000 is commercial-grade, TO-92 packaged, and unqualified for aerospace use. While both are N-channel MOSFETs, the 2N6661JTXP02 serves distinct reliability-critical roles where the 2N7000 does not meet specification.

What is the maximum continuous drain current for the 2N6661JTXP02 at 100 °C case temperature?

The maximum continuous drain current for the 2N6661JTXP02 is 0.54 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations - at higher case temperatures, power dissipation must be reduced to maintain junction temperature ≤150 °C. The 2N6661JTXP02 delivers 0.86 A only at T_C = 25 °C; proper heatsinking is essential to sustain current in real-world 2N6661JTXP02 deployments.

2N6661JTXP02 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-205AD, TO-39-3 Metal Can

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 90 V

Current - Continuous Drain (Id) @ 25°C:: 860mA (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 4Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:: 2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 50 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 725mW (Ta), 6.25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-39

2N6661JTXP02 FAQ

1.How can I place an order for 2N6661JTXP02 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N6661JTXP02 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N6661JTXP02 reliable?

The price and inventory of 2N6661JTXP02 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N6661JTXP02 is usually 5 days.

3.What payment methods are accepted for 2N6661JTXP02?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N6661JTXP02 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N6661JTXP02?

2N6661JTXP02 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N6661JTXP02 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N6661JTXP02?

For technical support, including 2N6661JTXP02 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N6661JTXP02 requirements.

6.How does Aetrix verify that 2N6661JTXP02 is sourced from the original manufacturer or authorized distributors?

All 2N6661JTXP02 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N6661JTXP02 meets industry standards.

7.What is the process for return or replacement of 2N6661JTXP02?

All 2N6661JTXP02 units undergo pre-shipment inspection (PSI). If there is an issue with 2N6661JTXP02, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N6661JTXP02 part is unused and in its original packaging.

Return procedure for 2N6661JTXP02:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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