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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix 2N6661JTXV02

Name: 2N6661JTXV02
Brand: Vishay Siliconix
SKU: 2N6661JTXV02
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N6661JTXV02

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-205AD, TO-39-3 Metal Can

Datasheet:: 2N6661JTXV02.pdf

Description:: MOSFET N-CH 90V 860MA TO39

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Product details

Overview

2N6661JTXV02 from Vishay Siliconix is a military-grade N-channel enhancement-mode MOSFET rated for 90 V drain-source voltage, with R_DS(on) = 3.6 Ω at V_GS = 10 V, V_GS(th) = 1.6 V (typ), and fast 6 ns turn-on time. It operates in hi-rel systems requiring direct TTL/CMOS logic-level drive and low-leakage switching of relays, solenoids, and lamps.

For engineers reviewing the 2N6661JTXV02 datasheet, 2N6661JTXV02 pinout, 2N6661JTXV02 application, or 2N6661JTXV02 equivalent, this page delivers verified military-spec parameters, TO-205AD (TO-39) package mapping, thermal resistance (R_thJC = 20 °C/W), and validated alternatives for high-reliability discrete power switching.

Technical Context

This device is a single N-channel silicon MOSFET optimized for low-voltage gate drive compatibility and stable operation across -55 °C to +150 °C junction temperature. Its 1.6 V threshold enables direct interface with TTL/CMOS logic without level-shifting, while its 35 pF input capacitance supports efficient driving without external buffers.

The MOSFET features a case-connected drain (TO-205AD metal can), low output leakage (<1 μA at 72 V, 25 °C), and switching times independent of temperature per datasheet Note 3. It is qualified to JANTXV standards with PIND-tested packaging for space and defense applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	90 V - Maximum blocking voltage before avalanche; suitable for 72 V DC bus switching in hardened systems.
R_DS(on)	3.6 Ω @ V_GS = 10 V - Low conduction loss enabling <1 W dissipation at 0.54 A continuous drain current (T_C = 100 °C).
V_GS(th)	1.6 V (typ) - Ensures reliable turn-on with standard 3.3 V or 5 V logic outputs; guaranteed 0.8–2.0 V range over temperature.
t_ON	6 ns - Fast switching minimizes transition losses in pulse-width modulated loads like solenoids and displays.
C_iss	35 pF - Low input capacitance reduces gate drive power and allows direct microcontroller GPIO control.
I_D (cont)	0.86 A @ T_C = 25 °C - Continuous current rating defined at case temperature; derates to 0.54 A at 100 °C case.
R_thJC	20 °C/W - Enables predictable thermal design when mounted to heatsink; junction-to-case path dominates thermal management.

Pinout & Package

2N6661JTXV02 is housed in a hermetically sealed TO-205AD (TO-39 tall lid) metal-can package with case-connected drain. The three-terminal configuration supports high-reliability mounting and EMI shielding in aerospace and defense environments.

Pin/Terminal	Circuit Role	Design Meaning
1 (Top View: Left)	Drain (D)	Electrically connected to metal case; must be isolated from PCB ground unless system design requires case grounding.
2 (Top View: Center)	Gate (G)	High-impedance MOSFET control terminal; sensitive to ESD; requires <20 V absolute max gate-source voltage.
3 (Top View: Right)	Source (S)	Reference node for gate drive; forms return path for load current; not internally tied to case.

Key Features

Feature	Design Value
Military qualification (JANTXV)	Qualified per MIL-PRF-19500/555 with PIND testing, burn-in, and lot traceability for space and defense programs.
Low threshold voltage	V_GS(th) = 1.6 V typ ensures robust turn-on with 3.3 V logic and eliminates need for gate boosters in battery-powered systems.
Case-connected drain	Enables mechanical heat sinking via case mounting while providing inherent EMI shielding for noise-sensitive analog subsystems.
Low input leakage	I_GSS ≤ ±100 nA at ±20 V gate bias ensures minimal gate charge loss during long standby intervals in mission-critical hold circuits.
Temperature-stable switching	Turn-on/off times are independent of junction temperature (Note 3), supporting consistent timing in wide-temperature-range avionics.

Applications

Relay/Solenoid Driver	Battery-Powered Logic Interface
Use Scenario: Driving 24 V DC solenoids in missile actuation systems where power cycling must occur within 10 ms. IC Role / Device Role / Timing Role: Discrete N-channel switch controlling high-side load current with TTL-compatible gate input. Use Value: 6 ns t_ON and 3.6 Ω R_DS(on) enable precise, low-loss pulse control without external drivers or heat sinks.	Use Scenario: Enabling/disabling sensor bias rails in satellite payload modules powered by 3.3 V regulated bus. IC Role / Device Role / Timing Role: Low-threshold MOSFET used as load switch between regulated supply and analog front-end. Use Value: 1.6 V V_GS(th) guarantees full enhancement at 3.3 V, eliminating level shifters and reducing BOM count.
Solid-State Relay Module	Hi-Rel Display Backlight Control
Use Scenario: Replacing electromechanical relays in radiation-hardened telemetry controllers requiring >10⁶ cycles. IC Role / Device Role / Timing Role: Single-pole, single-throw (SPST) solid-state switch with case-grounded drain for isolation integrity. Use Value: Hermetic TO-205AD package and JANTXV qualification ensure long-term reliability under thermal cycling and vacuum conditions.	Use Scenario: PWM dimming of electroluminescent (EL) panels in cockpit instrumentation with strict EMI limits. IC Role / Device Role / Timing Role: Fast-switching discrete FET used in low-side PWM path to minimize conducted emissions. Use Value: 35 pF C_iss and 6 ns t_ON reduce dv/dt-induced noise, meeting MIL-STD-461E CS114 requirements.

Relay/Solenoid Driver

Battery-Powered Logic Interface

Use Scenario: Driving 24 V DC solenoids in missile actuation systems where power cycling must occur within 10 ms.

IC Role / Device Role / Timing Role: Discrete N-channel switch controlling high-side load current with TTL-compatible gate input.

Use Value: 6 ns t_ON and 3.6 Ω R_DS(on) enable precise, low-loss pulse control without external drivers or heat sinks.

Use Scenario: Enabling/disabling sensor bias rails in satellite payload modules powered by 3.3 V regulated bus.

IC Role / Device Role / Timing Role: Low-threshold MOSFET used as load switch between regulated supply and analog front-end.

Use Value: 1.6 V V_GS(th) guarantees full enhancement at 3.3 V, eliminating level shifters and reducing BOM count.

Solid-State Relay Module

Hi-Rel Display Backlight Control

Use Scenario: Replacing electromechanical relays in radiation-hardened telemetry controllers requiring >10⁶ cycles.

IC Role / Device Role / Timing Role: Single-pole, single-throw (SPST) solid-state switch with case-grounded drain for isolation integrity.

Use Value: Hermetic TO-205AD package and JANTXV qualification ensure long-term reliability under thermal cycling and vacuum conditions.

Use Scenario: PWM dimming of electroluminescent (EL) panels in cockpit instrumentation with strict EMI limits.

IC Role / Device Role / Timing Role: Fast-switching discrete FET used in low-side PWM path to minimize conducted emissions.

Use Value: 35 pF C_iss and 6 ns t_ON reduce dv/dt-induced noise, meeting MIL-STD-461E CS114 requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2N6660JTXV02	Lower V_DS = 60 V; R_DS(on) = 5.5 Ω @ 10 V; same TO-205AD package and JANTXV qualification.	Not suitable for 72 V bus applications; limited to ≤50 V systems with higher conduction loss.	Select only if system voltage is capped at 50 V and lower cost is prioritized over on-resistance.
2N7000JTXV	Commercial-grade variant; V_DS = 60 V; R_DS(on) = 5.0 Ω; no PIND or burn-in; plastic TO-92 package.	Lacks hermetic sealing, radiation tolerance, and extended temperature validation; unsuitable for flight hardware.	Acceptable only for ground-test prototypes or non-flight subsystems where military screening is not required.

Compared with 2N6661JTXV02, 2N6660JTXV02 trades voltage rating and on-resistance for cost, while 2N7000JTXV sacrifices reliability, packaging, and qualification for volume production economics-neither is pin-compatible nor drop-in.

Availability

2N6661JTXV02 is available at Aetrix Electronics and suitable for relay drivers, battery-powered logic interfaces, and solid-state relay modules requiring stable component supply, full traceability, and long-term obsolescence mitigation.

Supply support for 2N6661JTXV02 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures high-performance discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics for demanding industrial, automotive, and aerospace applications.

The 2N6661JTXV02 belongs to Vishay's military-qualified silicon MOSFET product line, engineered for high-reliability switching in extreme environments including space, avionics, and defense electronics.

FAQ

What is the maximum gate-source voltage rating for the 2N6661JTXV02?

The 2N6661JTXV02 has an absolute maximum gate-source voltage (V_GS) rating of ±20 V. Exceeding this limit risks permanent gate oxide damage. Designers should implement clamping (e.g., Zener diodes) when driving from unregulated sources or in noisy environments. This rating is confirmed in the Absolute Maximum Ratings table of Vishay document 70225.

Is the drain terminal of the 2N6661JTXV02 electrically connected to the case?

Yes-the drain of the 2N6661JTXV02 is internally bonded to the metal case of the TO-205AD package. This is explicitly stated in the Package Information document 71367 and impacts PCB layout: the case must be electrically isolated from other nodes unless system grounding strategy intentionally ties drain to chassis ground.

Does the 2N6661JTXV02 require a gate resistor for safe operation?

A gate resistor is recommended for the 2N6661JTXV02 to dampen ringing and limit peak gate current during fast transitions. While not strictly mandatory due to its low C_iss (35 pF), a 10–47 Ω series resistor improves EMI performance and prevents oscillation when driven by high-speed logic. This practice is supported by Vishay's typical gate charge and switching waveforms in Figure 7 of document 70225.

What is the thermal resistance from junction to case (R_thJC) for the 2N6661JTXV02?

The junction-to-case thermal resistance (R_thJC) of the 2N6661JTXV02 is 20 °C/W, as specified in the Absolute Maximum Ratings table. This value assumes proper mechanical mounting of the TO-205AD case to a heatsink or cold plate with appropriate thermal interface material. It does not include PCB conduction or ambient convection paths.

How does the 2N6661JTXV02 differ from the commercial 2N6661 variant?

The 2N6661JTXV02 differs from the commercial 2N6661 in qualification level, packaging, and screening: it is JANTXV-qualified with PIND testing, hermetic TO-205AD packaging, extended temperature validation (-55 °C to +150 °C), and full lot traceability. The commercial version uses Pb-free TO-39 packaging without military screening or environmental stress testing.

2N6661JTXV02 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-205AD, TO-39-3 Metal Can

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 90 V

Current - Continuous Drain (Id) @ 25°C:: 860mA (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 4Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:: 2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 50 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 725mW (Ta), 6.25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-39

2N6661JTXV02 FAQ

1.How can I place an order for 2N6661JTXV02 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N6661JTXV02 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N6661JTXV02 reliable?

The price and inventory of 2N6661JTXV02 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N6661JTXV02 is usually 5 days.

3.What payment methods are accepted for 2N6661JTXV02?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N6661JTXV02 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N6661JTXV02?

2N6661JTXV02 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N6661JTXV02 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N6661JTXV02?

For technical support, including 2N6661JTXV02 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N6661JTXV02 requirements.

6.How does Aetrix verify that 2N6661JTXV02 is sourced from the original manufacturer or authorized distributors?

All 2N6661JTXV02 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N6661JTXV02 meets industry standards.

7.What is the process for return or replacement of 2N6661JTXV02?

All 2N6661JTXV02 units undergo pre-shipment inspection (PSI). If there is an issue with 2N6661JTXV02, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N6661JTXV02 part is unused and in its original packaging.

Return procedure for 2N6661JTXV02:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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